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Devices are used in inspection of contact resistance in plated connectors after assembly into cables. System permits rapid inspection of connectors when mating connectors or special apparatus are not available, and enables source of excessive resistance to be precisely determined.
Low resistance small area contacts on semiconducting metal oxides
Friction and contact resistance for gallium lubricated low speed copper sliprings in vacuum
Analysis has been conducted to determine thermal contact resistance at interface of two heat conductors and effect of roughness of mating surfaces on pressure distribution. Investigation reveals how heat transfer resistance may be decreased or increased by changing surface properties of particular interface being considered.
We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.
Techniques explored in search for rapid, reliable test. Resistances of aluminum/silicon contacts and methods to measure subjects of NASA report. Study with three tasks undertaken to evaluate nature and reliability of large numbers of semiconductor contacts of type now being fabricated in integrated circuits: Develop yield analysis for series strings of contacts using wafer-level electrical measurements, and identify different types of faults by visual inspection; develop wafer-level tests to evaluate reliability of contact strings; and develop mathematical model for current flow in contacts and examine contact region for evidence of micro-alloying.
Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between metallic surfaces. Etching results in a monolayer plating of platinum on the wafer surface, preventing oxide growth.
A comparative study of the methods developed for the calculation of thermal contact resistance between two surfaces submitted to a perpendicular heat flux is presented. Several factors affecting this resistance are analyzed and a brief historical review of the works in this field is made, spotting the methods of interest for space applications. These are compared to experimental data so as to establish the most proper method for the couplings of the first Brazilian satellite.
Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.
Transient temperature distribution in two layer one dimensional slab with initially steady state heat transfer and suddenly changed thermal contact resistances
Thermal contact resistance measurement at various ambient pressures compared with theoretical predictions with each parameter analyzed over interface by computer program
Interfacial thermal resistance results of various nanotube and nanofiber coatings, prepared by chemical vapor deposition (CVD) methods, are reported at relatively low clamping pressures. The five types of samples examined include multi-walled and single-walled nanotubes growth by CVD, multi-walled nanotubes grown by plasma enhanced CVD (PECVD) and carbon nanofibers of differing aspect ratio grown by PECVD. Of the samples examined, only high aspect ratio nanofibers and thermally grown multi-walled nanotubes show an improvement in thermal contact resistance. The improvement is approximately a 60% lower thermal resistance than a bare Si-Cu interface and is comparable to that attained by commercially available thermal interface materials.
At least one tactile sensor includes an insulating layer and a conductive layer formed on the surface of the insulating layer. The conductive layer defines at least one group of flexible projections extending orthogonally from the surface of the insulating layer. The flexible projections include a major projection extending a distance orthogonally from the surface and at least one minor projection that is adjacent to and separate from the major projection wherein the major projection extends a distance orthogonally that is greater than the distance that the minor projection extends orthogonally. Upon a compressive force normal to, or a shear force parallel to, the surface, the major projection and the minor projection flex such that an electrical contact resistance is formed between the major projection and the minor projection. A capacitive tactile sensor is also disclosed that responds to the normal and shear forces.
The contact of two rough, wavy surfaces; the contact of two rough but nominally flat plates pressed together over a concentrated area; and the contact of two rough but nominally flat plates bolted together are considered. In each case the pressure distribution is calculated as a function of the surface properties. In the case of wavy surfaces it is found that all necessary information for any combination of parameters can be reduced to one master graph. In the other two cases one such graph is needed for each geometry used. The resulting pressure distributions are used in a specific heat transfer example and the total joint resistance versus roughness is presented. A method for decreasing the resistance by increasing the roughness is shown.
Ohmmeter is used to indicate positive contact between electrodes and workpiece. This permits good soldering and prevents damage to electronic devices.
Two contact systems for use on shallow junction InP solar cells are described. The feature shared by these two contact systems is the absence of the metallurgical intermixing that normally takes place between the semiconductor and the contact metallization during the sintering process. The n(+)pp(+) cell contact system, consisting of a combination of Au and Ge, not only exhibits very low resistance in the as-fabricated state, but also yields post-sinter resistivity values of 1(exp -7) ohms-sq cm, with effectively no metal-InP interdiffusion. The n(+)pp(+)cell contact system, consisting of a combination of Ag and Zn, permits low resistance ohmic contact to be made directly to a shallow junction p/n InP device without harming the device itself during the contacting process.
One difficulty in using cryocoolers is making good thermal contact between the cooler and the instrument being cooled. The connection is often made through a bolted joint. The temperature drop associated with this joint has been the subject of many experimental and theoretical studies. The low temperature behavior of dry joints have shown some anomalous dependence on the surface condition of the mating parts. There is also some doubts on how well one can extrapolate from the test samples to predicting the performance of a real system. Both finite element and analytic models of a simple contact system have been developed. The model assumes (a) the contact is dry (contact limited to a small portion of the total available area and the spaces in-between the actual contact patches are perfect insulators), (b) contacts are clean (conductivity of the actual contact is the same as the bulk), (c) small temperature gradients (the bulk conductance may be assumed to be temperature independent), (d) the absolute temperature is low (thermal radiation effects are ignored), and (e) the dimensions of the nominal contact area are small compared to the thickness of the bulk material (the contact effects are localized near the contact). The models show that in the limit of actual contact area much less than the nominal area (a much less than A), that the excess temperature drop due to a single point of contact scales as a(exp -1/2). This disturbance only extends a distance approx. A(exp 1/2) into the bulk material. A group of identical contacts will result in an excess temperature drop that scales as n(exp -1/2), where n is the number of contacts and n dot a is constant. This implies that flat rough surfaces will have a lower excess temperature drop than flat polished surfaces.
Bimetallic contacts utilizing palladium and aluminum, gold, silver, or chromium, are used in reduction of series resistance in GaAlAs/GaAs solar cells, thereby improving cell reliability.