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At least 55 records · Page 3

Identifying Boron Active Sites for the Oxidative Dehydrogenation of Propane

Oxidative dehydrogenation of propane (ODHP) to propylene could have a significant impact on the production of this critical chemical intermediate, if appropriate catalysts can be discovered. Recently, heterogeneous catalysts based on boron (oxides and nitrides) have been demonstrated to be promising for ODHP, but their active sites have not been conclusively identified. Here, we report that the deposition of differently sized boronic acids into the micropores of silica supports results in different distributions of surface borate species after calcination. Furthermore, these materials, in turn, display a wide range of rates in ODHP but similar selectivity, suggesting that they differ only in the numbers of active sites. Features identified by in situ Raman, IR, and magic-angle-spinning 11 B solid-state NMR spectroscopies are compared to catalyst activity. This correlation identifies the S2 borate species, a hydroxylated nonring boron, as the likely active site and provides a target for directed syntheses of future catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Unexpected structural softening of interstitial boron solid solution WB{sub 3+x}

Using first-principles calculations, we reveal an unexpected structural softening in a recently proposed WB{sub 3+x} structural model that tries to explain the X-ray diffraction, high resolution TEM, pressure dependence of the normalized lattice c/a ratio, and hardness experimental results of the synthesized tungsten boride compounds with a nominal composition WB{sub 4}. We show that the interstitial boron in WB{sub 3+x}, which was proposed to strengthen the covalent bonding network, unexpectedly weakens the atomic bonding, resulting in a large reduction of its indentation strength to well below that of WB{sub 3}. This is in direct contradiction to the experimental results showing that synthesized WB{sub 4} is harder than WB{sub 3}. The unusual structural softening is attributed to the unique three-center covalent bonding formed by the interstitial boron atoms that can easily deform under indentation. Our results show that the proposed interstitial boron solid solution WB{sub 3+x} structure is incompatible with experimental results, which calls for further investigations to determine the crystal structure of the synthesized WB{sub 4}.

36 MATERIALS SCIENCE↗

Effect of Solute Elements on Boron Segregation in Boron-Containing Steels

The addition of boron to steel alloys results in an increase in both hardenability and casting defects. The casting difficulties are predicted to stem from a metatectic reaction, δ + γ → L + γ, where a fully solidified material begins to locally remelt as the temperature decreases. Another possible source of casting defects is a boride-rich phase that is predicted to remain liquid at low temperatures. To experimentally determine which reaction is the likely source of the casting defects, the predicted reactions and the effect of solute elements on those reactions are investigated. Levitation zone melting is used to control segregation in a ternary Fe–C–B alloy and a commercial 22MnB5 alloy. Carbon segregation and a peritectic reaction result in a peritectic jump during directional solidification where the first directionally solidified (DS) zone undergoes δ-bcc solidification followed by a peritectic jump to steady state planar solidification of γ-fcc in the second DS zone. The presence of other solute elements in the zone melted 22MnB5 alloy lead to a breakdown in the planar solidification front before steady state solidification could be achieved in the second DS zone. With a cellular solid/liquid interface, boron-rich intercellular liquid formed low melting iron boro-carbide particles. The controlled solidification conditions in a levitation zone melter were unable to prevent ~0.003 wt% boron from segregating to high enough levels to form boride particles. Therefore, it is likely that during commercial casting, the formation of the low melting boride phase from interdendritic segregation is a key source of the casting issues.

36 MATERIALS SCIENCE↗

Serendipity in Catalysis Research: Boron-Based Materials for Alkane Oxidative Dehydrogenation

In this Account, we will first present our initial discovery of boron nitride (BN) as an unexpected catalyst for the oxidative dehydrogenation of light alkanes. Beyond its surprising activity, BN also drew interest due to its low selectivity to carbon oxides. This observation made BN distinct from previously studied metal oxide catalysts for selective alkane oxidation. Here, we narrowed down its unique reactivity to the oxygen functionalization of the catalyst surface, particularly the formation of B–O species as probed by various spectroscopic techniques. In investigating the critical role of each of the structural elements during ODH, we discovered that not only BN but an entire class of boron-containing compounds are active and selective for the formation of propylene from propane.

03 NATURAL GAS↗

Simultaneous oxygen and boron trifluoride functionalization of hexagonal boron nitride: a designer cathode material for energy storage

Covalent functionalization is a way to tune the electrochemical properties of hexagonal boron nitride (h-BN) monolayers. The wide bandgap insulator h-BN may become metallic conductor upon functionalization with strong oxidants, such as (fluorosulfonyl)oxy radicals (·OSO 2 F), as known since 1978 ( Bartlett et al in J Chem Soc Chem Commun 5:200, 1978), with electrical conductivity of 1.5 S/cm (Shen et al in J Solid State Chem 147:74, 1999) that greatly surpasses commercial cathode material Li x CoO 2 while retaining excellent ionic conductivity. Functionalized boron nitrides (FBN-s) have great potential for cathode applications in energy storage devices, for example, in solid-state batteries. While (fluorosulfonyl)oxy functionalization is unlikely to result in rechargeable cathodes, similarly to graphene fluoride (CF x ), some other FBN-s discussed here may do. In the present work, fluorene, oxygen and combined oxygen and boron trifluoride functionalizations are studied, on the basis of band structure calculations. Due to the open surfaces of FBN-s, fast ionic diffusion with Li, Na and Mg ions is possible, enabling batteries with voltages of 2.1–5.6 V, theoretical energy densities of 800–1200 Wh/kg and fast charge and discharge.

Chemistry↗

Stacking-engineered ferroelectricity in bilayer boron nitride

Stacking a ferroelectric Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasuda et al. used transport measurements, whereas Vizner Stern et al. focused on atomic force microscopy. Science , abd3230 and abe8177, this issue p. 1458 and p. 1462 ; see also abi7296, p. 1389

Science & Technology - Other Topics↗

Subterahertz Spin Relaxation Dynamics of Boron-Vacancy Centers in Hexagonal Boron Nitride

Quantum sensors based on spin defects have become powerful tools for detecting faint magnetic signals, yet their operation remains confined to low magnetic fields and gigahertz frequencies. Extending such sensors into high-field (>0.3 T) and subterahertz regimes would enable quantum metrology across a wide range of electromagnetic phenomena and scientific applications, but has proven challenging. Here, we demonstrate that negatively charged boron vacancies ($V^−_B$) in hexagonal boron nitride can function as relaxation-based quantum sensors operating up to 0.2 terahertz and 7 T fields. Their uniform spin-orientation and persistent spin-contrast at high fields enable measurement of intrinsic spin relaxation across unexplored field regimes. We reveal a crossover in relaxation behavior, initially decreasing at low fields before rising at higher fields, consistent with the emergence of single-phonon-induced resonant noise at subterahertz frequencies. These results establish $V^−_B$ centers as a versatile platform for quantum sensing in the subterahertz, high-field regime.

boron-vacancies↗

From Highly Purified Boron Nitride to Boron Nitride-Based Heterostructures: An Inorganic Precursor-Based Strategy

The current approaches used to fabricate hexagonal boron nitrides (h-BN) from boron trioxide and urea always results in contamination of the h-BN product with carbon/oxygen. Thus, discovering a facile way of mass producing high-purity h-BN remains a challenge. A simple yet highly efficient thermal treatment approach to large-scale fabrication of nanoporous h-BN with high yield, high purity, and high crystallinity is described using NaNH 2 and NaBH 4 as the oxygen- and carbon-free precursors. The unique properties of inorganic metal salts, i.e., high melting point and strong electrostatic interaction with carbon substrates, render this strategy suitable for the production of homogeneous h-BN/mesoporous carbon and h-BN/carbon nanotube heterostructures of high crystallinity, high h-BN dispersity, and with a strong interfacial effect. Therefore, these unique features make them promising candidates for supercapacitor applications, resulting a significantly enhanced specific capacitance. This study provides new insight into the fabrication of high-purity h-BN and h-BN-based heterostructures thus expanding their application in the field of energy storage and transformation.

36 MATERIALS SCIENCE↗

Recent Advances in the Understanding of Boron-Containing Catalysts for the Selective Oxidation of Alkanes to Olefins

The production of ethylene and propylene through aerobic alkane oxidation without significant coproduction of CO and CO 2 (CO x ) presents a challenge to academic and industrial researchers alike. Recently, boron-containing materials such as hexagonal boron nitride (hBN) have been identified as active and selective catalysts for the oxidative dehydrogenation (ODH) of propane to propylene with minimal CO x selectivity. Additionally, high olefin selectivity is also obtained in the oxidation of other alkanes and other materials such as metal borides and supported B/SiO 2 have been successfully applied to this transformation. Here, recent advances in the understanding of these catalysts in the oxidation of light alkanes are presented here providing a framework for further study of this exciting field.

03 NATURAL GAS↗

Atom-probe tomography of tribological boundary films resulting from boron-based oil additives

Correlative characterization using atom-probe tomography (APT) and transmission electron microscopy (TEM) was performed on a tribofilm formed during sliding frictional testing with a fully formulated engine oil, which also contains a boron-based additive. The tribofilm formed is ~15 nm thick and consists of oxides of iron and compounds of B, Ca, P, and S, which are present in the additive. This study provides strong evidence for boron being embedded in the tribofilm, which effectively reduces friction and wear losses.

Atom-probe tomography↗

Insights into Boron-Based Polyanion-Tuned High-Nickel Cathodes for High-Energy-Density Lithium-Ion Batteries

Ultrahigh-Ni layered oxide cathodes (Ni content > 90%) are at the forefront for potentially enabling higher-energy density lithium-ion batteries. Unfortunately, they suffer from rapid capacity fade, poor thermal stability, and increased air sensitivity. Introduction of boron-based polyanion into layered cathodes has been found to be effective in stabilizing high-Ni cathodes, but the mechanism behind it is not yet fully understood. To develop a better understanding, we present here an extensive characterization of the ultrahigh-Ni cathode LiNi 0.94 Co 0.06 O 2 (NC) and B 2 O 3 -LiNi 0.94 Co 0.06 O 2 (B-NC). The B-NC delivers a capacity of 223 mA h g -1 with 80% capacity retention after 400 cycles in full cells with graphite anodes, superior to 61% retention for NC. In-depth interphase investigations reveal that the improved cyclability is attributed to the development of a well-passivated boron/phosphorus-rich cathode-electrolyte interphase in B-NC. Moreover, B-NC demonstrates a considerably enhanced air-exposure and thermal stability. A 30-day air-stored B-NC delivers a discharge capacity of 125 mA h g -1 at 10C rate, in sharp contrast to 65 mA h g -1 for the stored NC. Finally, this work advances the understanding of the effect boron-based polyanion insertion into layered oxides has on battery performance and offers a viable strategy for developing practically viable ultra-high-Ni cathodes with high-energy density.

25 ENERGY STORAGE↗

Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se₂ (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO=VBM{sub CIGS} – VBM{sub diamond}=0.3 eV±0.1 eV at the CIGS/Diamond interface and 0.0 eV±0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride

When graphene is placed on hexagonal boron nitride with a twist angle, new properties develop due to the resulting moiré superlattice. Here, we report a method using Raman spectroscopy to make rapid, non-destructive measurements of the twist angle between bilayer graphene and hexagonal boron nitride. The lattice orientation is determined by using flakes with both bilayer and monolayer regions, and using the known Raman signature for the monolayer to measure the twist angle of the entire flake. The widths of the second order Raman peaks are found to vary linearly in the superlattice period and are used to determine the twist angle. The results are confirmed by using transport measurements to infer the superlattice period by the charge density required to reach the secondary resistance peaks. Small twist angles are also found to produce a significant modification of the first order Raman G band peak.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nature of exciton transitions in hexagonal boron nitride

In contrast to other III-nitride semiconductors GaN and AlN, the intrinsic (or free) exciton transition in hexagonal boron nitride ( h -BN) consists of rather complex fine spectral features (resolved into six sharp emission peaks) and the origin of which is still unclear. In this work, the free exciton transition (FX) in h -BN bulk crystals synthesized by a solution method at atmospheric pressure has been probed by deep UV time-resolved photoluminescence (PL) spectroscopy. Based on the separations between the energy peak positions of the FX emission lines, the identical PL decay kinetics among different FX emission lines, and the known phonon modes in h -BN, we suggest that there is only one principal emission line corresponding to the direct intrinsic FX transition in h -BN, whereas all other fine features are a result of phonon-assisted transitions. The identified phonon modes are all associated with the center of the Brillouin zone. Our results offer a simple picture for the understanding of the fundamental exciton transitions in h -BN.

36 MATERIALS SCIENCE↗

Search for giant magnetic anisotropy in transition-metal dimers on defected hexagonal boron nitride sheet

Structural and magnetic properties of many transition-metal dimers embedded in a defected hexagonal boron nitride monolayer are investigated through density functional calculations to search for systems with magnetic anisotropy energies (MAEs) larger than 30meV. In particular, Ir–Ir@Dh–BN is found to have both large MAE (∼126 meV) and high structural stability against dissociation and diffusion, and it hence can serve as magnetic unit in spintronics and quantum computing devices. This giant MAE mainly results from the spin orbit coupling and the magnetization of the upper Ir atom, which is in a rather isolated environment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗