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At least 55 records · Page 3

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NASA NTRS2004

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

large-area electronics↗

DOE OSTI2021

Three-Wave Mixing Kinetic Inductance Traveling-Wave Amplifier with Near-Quantum-Limited Noise Performance

We present a theoretical model and experimental characterization of a microwave kinetic inductance traveling-wave (KIT) amplifier, whose noise performance, measured by a shot-noise tunnel junction (SNTJ), approaches the quantum limit. Biased with a dc current, this amplifier operates in a three-wave mixing fashion, thereby reducing by several orders of magnitude the power of the microwave pump tone and associated parasitic heating compared to conventional four-wave mixing KIT amplifier devices. It consists of a 50 Ω artificial transmission line whose dispersion allows for a controlled amplification bandwidth. We measure $16.5^{+1}_{–1.3}$ dB of gain across a 2 GHz bandwidth with an input 1 dB compression power of –63 dBm, in qualitative agreement with theory. Using a theoretical framework that accounts for the SNTJ-generated noise entering both the signal and idler ports of the KIT amplifier, we measure the system-added noise of an amplification chain that integrates the KIT amplifier as the first amplifier. This system-added noise, 3.1 ± 0.6 quanta (equivalent to 0.66 ± 0.15 K) between 3.5 and 5.5 GHz, is the one that a device replacing the SNTJ in that chain would see. This KIT amplifier is therefore suitable to read large arrays of microwave kinetic inductance detectors and promising for multiplexed superconducting qubit readout.

42 ENGINEERING↗

NASA NTRS1984

Low noise tuned amplifier

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

Kleinberg, L. L.↗

NASA NTRS1984

K-band FET amplifier for satellite downlink

State-of-the-art performance is demonstrated with solid-state amplifiers in K-band. The amplifier provides 8.2 watts of power with 39 dB gain over a frequency band of 1.4 GHz. Nonlinearity analyses of solid-state amplifiers suggest that system performance can be improved significantly by using an FET amplifier. Preliminary investigations reveal that the solid-state amplifiers can be space-qualified and can be expected to replace the TWTA in many communication links in the near future. It is pointed out that with improvements in device technology, the power, bandwidth and efficiency of solid-state amplifiers using FETs can be further improved. With FETs operating at a junction temperature of less than 125 C, solid-state amplifiers are inherently reliable, indicating a ten-year mean time to failure.

Goel, J.↗

NASA NTRS1985

Direct solar-pumped iodine laser amplifier

This semiannual progress report covers the period from April 1, 1985 to Sept. 30, 1985 under NASA grant NAS1-441 entitled direct solar pumped iodine laser amplifier. During this period the parametric studies of the iodine laser oscillator pumped by a Vortek simulator was carried out before the amplifier studies. The amplifier studies are postponed to the extended period following completion of the parametric studies. In addition, the kinetic modeling of a solar pumped iodine laser amplifier, and the experimental work for a solar pumped dye laser amplifier are in progress. This report contains three parts: (1) the radiation characteristics of solar simulator and the parametric characteristics of photodissociation iodine laser continuously pumped by a Vortek solar simulator; (2) kinetic modeling of a solar pumped iodine laser amplifier; and (3) the study of the dye laser amplifier pumped by a Tamarack solar simulator.

Han, K. S.↗

NASA NTRS1992

A 1-W, 30-ghz, CPW Amplifier for ACTS Small Terminal Uplink

The progress is described of the development of a 1 W, 30 GHz, coplanar waveguide (CPW) amplifier for the Advanced Communication Technology Satellite (ACTS)Small Terminal Uplink. The amplifier is based on Texas Instruments' monolithic microwave integrated circuit (MMIC) amplifiers; a three stage, low power amplifier, and a single stage, high power amplifier. The amplifiers have a power output of 190 mW and 0.710 W, gain of 23 and 4.2 dB, and efficiencies of 30.2 and 24 percent for the three stage and one stage amplifiers, respectively. The chips are to be combined via a CPW power divider/combiner circuit to yield the desired 1 W of output power.

Taub, Susan R.↗

NASA NTRS1992

A 1-W, 30-GHz, CPW amplifier for ACTS small terminal uplink

The progress to date of the development of a 1-W, 30-GHz, coplanar waveguide (CPW) amplifier for the Advanced Communication Technology Satellite (ACTS) Small Terminal Uplink is described. The amplifier is based on Texas Instruments' monolithic microwave integrated circuit (MMIC) amplifiers; a three-stage, low-power amplifier and a single stage, high-power amplifier. The amplifiers have a power output of 190 mW and 0.710 W, gain of 23 and 4.2 dB, and efficiencies of 30.2 and 24 percent for the three-stage and one-stage amplifiers, respectively. The chips are to be combined via a CPW power divider/combiner circuit to yield the desired 1 W of output power.

Taub, Susan R.↗

NASA NTRS1994

Universal signal conditioning amplifier

A state-of-the-art instrumentation amplifier capable of being used with most types of transducers has been developed at the Kennedy Space Center. This Universal Signal Conditioning Amplifier (USCA) can eliminate costly measurement setup item and troubleshooting, improve system reliability and provide more accurate data than conventional amplifiers. The USCA can configure itself for maximum resolution and accuracy based on information read from a RAM chip attached to each transducer. Excitation voltages or current are also automatically configured. The amplifier uses both analog and digital state-of-the-art technology with analog-to-digital conversion performed in the early stages in order to minimize errors introduced by offset and gain drifts in the analog components. A dynamic temperature compensation scheme has been designed to achieve and maintain 12-bit accuracy of the amplifier from 0 to 70 C. The digital signal processing section allows the implementation of digital filters up to 511th order. The amplifier can also perform real-time linearizations up to fourth order while processing data at a rate of 23.438 kS/s. Both digital and analog outputs are available from the amplifier.

Medelius, Pedro J.↗

NASA NTRS2005

High-Efficiency Microwave Power Amplifier

A high-efficiency power amplifier that operates in the S band (frequencies of the order of a few gigahertz) utilizes transistors operating under class-D bias and excitation conditions. Class-D operation has been utilized at lower frequencies, but, until now, has not been exploited in the S band. Nominally, in class D operation, a transistor is switched rapidly between "on" and "off" states so that at any given instant, it sustains either high current or high voltage, but not both at the same time. In the ideal case of zero "on" resistance, infinite "off" resistance, zero inductance and capacitance, and perfect switching, the output signal would be a perfect square wave. Relative to the traditional classes A, B, and C of amplifier operation, class D offers the potential to achieve greater power efficiency. In addition, relative to class-A amplifiers, class-D amplifiers are less likely to go into oscillation. In order to design this amplifier, it was necessary to derive mathematical models of microwave power transistors for incorporation into a larger mathematical model for computational simulation of the operation of a class-D microwave amplifier. The design incorporates state-of-the-art switching techniques applicable only in the microwave frequency range. Another major novel feature is a transmission-line power splitter/combiner designed with the help of phasing techniques to enable an approximation of a square-wave signal (which is inherently a wideband signal) to propagate through what would, if designed in a more traditional manner, behave as a more severely band-limited device (see figure). The amplifier includes an input, a driver, and a final stage. Each stage contains a pair of GaAs-based field-effect transistors biased in class D. The input signal can range from -10 to +10 dBm into a 50-ohm load. The table summarizes the performances of the three stages

Sims, Williams H.↗

DOE OSTI2021

Low-cost gradient amplifiers for small MRI systems

Here, we describe low-cost gradient amplifiers for small MRI systems, such as those based on small/medium permanent magnets. The requirements for MRI gradient amplifiers are quite similar to those of modestly priced audio stereo power amplifiers. Such amplifiers for sound service can be modified to be DC coupled, extending their response down to zero frequency, as needed for MRI gradient service. We describe such modifications to one unit (Samson Servo 600) and mention a commercially available modification of another. The 600 is capable of an output greater than ±8 A and ±60 V, much greater than our needs for a greenhouse MRI. Audio amplifiers can be used this way as controlled voltage (CV) gradient amplifiers, with acceptable performance because the gradient coils typically have short L/R time constants. Superior performance can be had by using a controlled current (CC) “front end”; the circuit of our simple front end is included. The complete 3-axis CC system costs about $1200.

47 OTHER INSTRUMENTATION↗

DOE OSTI2021

Flux-pumped impedance-engineered broadband Josephson parametric amplifier

Broadband quantum-limited amplifiers play a critical role in the single-shot readout of superconducting qubits, but a popular implementation, the traveling wave parametric amplifier, involves a complex design and fabrication process. Here, we present a simple design for a Josephson parametric amplifier, using a lumped element resonator comprising a superconducting quantum interference device whose useful bandwidth is enhanced with an on-chip impedance-matching circuit. Additionally, we demonstrate a flux-coupling geometry that maximizes the coupling to the Josepson loop and minimizes spurious excitation of the amplifier resonant circuit. The amplifier, which operates in a flux-pumped mode, is demonstrated with a power gain of more than 20dB over a bandwidth of about 300MHz, where approximate noise measurements indicate quantum-limited pehrformance. A procedure is given for optimizing the bandwidth for this kind of amplifier, using a linearized circuit simulation while minimizing non-linearities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Multi-amplifier Sensing Charge-coupled Devices for Next Generation Spectroscopy

We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal, photon-limited imaging. The MAS CCD is designed to reach sub-electron readout noise by repeatedly measuring charge through a line of amplifiers during the serial transfer shifts. Using synchronized readout electronics based on the Dark Energy Spectroscopic Instrument CCD controller, we report a read noise of 1.03 e$^{−}$ rms pix$^{−1}$ at a speed of 26 μs pix$^{−1}$ with a single-sample readout scheme where charge in a pixel is measured only once for each output stage. At these operating parameters, we find the amplifier-to-amplifier charge transfer efficiency (ACTE) to be >0.9995 at low counts for all amplifiers but one for which the ACTE is 0.997. This charge transfer efficiency falls above 50,000 electrons for the read-noise optimized voltage configuration we chose for the serial clocks and gates. The amplifier linearity across a broad dynamic range from ∼300 to 35,000 e$^{−}$ was also measured to be ±2.5%. We describe key operating parameters to optimize on these characteristics and describe the specific applications for which the MAS CCD may be a suitable detector candidate.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS1971

Electronic amplifiers: A compilation

Several types of amplifiers and amplifier systems are considered. These include preamplifiers, high power amplifiers, buffer and isolation amplifiers, amplifier circuits, and general purpose amplifiers.

Source record↗

NASA NTRS1972

Intermodulation characteristics of X-band IMPATT amplifiers.

Measurement of the intermodulation products produced when two equal amplitude signals are applied to the input of an X-band IMPATT diode amplifier. A Si p(+)nn(+) IMPATT diode was operated in a double-slug-tuned reflection amplifier circuit that was tuned to provide 20 dB of small-signal gain at 9.340 GHz. The intermodulation tests consist of measurements of the magnitudes and frequencies of the amplifier output signals as a function of the input signal drive levels and frequency separations. The gain and single-frequency characteristics of the amplifier were also measured and are used along with the theoretical device and circuit admittance characteristics as a basis for explanation of the intermodulation results. A low-frequency dominance mechanism is found to exist in which the low-frequency signals are amplified more than the high-frequency signals. This mechanism becomes more significant as the amplifier drive level is increased.

Trew, R. J.↗

NASA NTRS1983

High stability amplifier

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Adams, W. A.↗

NASA NTRS1985

Amplifier for measuring low-level signals in the presence of high common mode voltage

A high common mode rejection differential amplifier wherein two serially arranged Darlington amplifier stages are employed and any common mode voltage is divided between them by a resistance network. The input to the first Darlington amplifier stage is coupled to a signal input resistor via an amplifier which isolates the input and presents a high impedance across this resistor. The output of the second Darlington stage is transposed in scale via an amplifier stage which has its input a biasing circuit which effects a finite biasing of the two Darlington amplifier stages.

Lukens, F. E.↗

NASA NTRS1984

The 20 GHz GaAs monolithic power amplifier module development

The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

Source record↗

NASA NTRS1987

Low phase noise oscillator using two parallel connected amplifiers

A high frequency oscillator is provided by connecting two amplifier circuits in parallel where each amplifier circuit provides the other amplifier circuit with the conditions necessary for oscillation. The inherent noise present in both amplifier circuits causes the quiescent current, and in turn, the generated frequency, to change. The changes in quiescent current cause the transconductance and the load impedance of each amplifier circuit to vary, and this in turn results in opposing changes in the input susceptance of each amplifier circuit. Because the changes in input susceptance oppose each other, the changes in quiescent current also oppose each other. The net result is that frequency stability is enhanced.

Kleinberg, Leonard L.↗