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AlN is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. Al3+ is bonded to four equivalent N3- atoms to form corner-sharing AlN4 tetrahedra. There is three shorter (1.90 Å) and one longer (1.91 Å) Al–N bond length. N3- is bonded to four equivalent Al3+ atoms to form corner-sharing NAl4 tetrahedra.
We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 000 at 90 pW (<1 μW cm−2) illumination with very low dark currents <0.1 pA at room temperature under ambient light. The high gain in large area AlGaN APDs is attributed to a high breakdown voltage at 340 V, corresponding to very high breakdown fields ∼9 MV cm−1 as a consequence of low threading and screw dislocation densities < 103 cm−2. The maximum charge collection efficiency of 30% was determined at 255 nm, corresponding to the bandgap of Al0.65Ga0.35N, with a response of 0.06 A/W. No response was detected for λ > 280 nm, establishing solar blindness of the device.
This manuscript reports the temperature dependence of ferroelectric switching in Al 0.84 Sc 0.16 N, Al 0.93 B 0.07 N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Furthermore, over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.
Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.
We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metal–organic chemical vapor deposition on sapphire substrates. The Brillouin–Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ∼300 m/s at the doping level of 3 × 1019 cm−3. The knowledge of the acoustic phonon velocities can be used for the optimization of the ultra-wide bandgap semiconductor heterostructures and for minimizing the thermal boundary resistance of high-power devices.
This manuscript presents a novel microcantilever with an embedded piezoelectric sensor-actuator pair for dynamic atomic force microscopy (AFM). The transducer pair is constructed from a two-layered AlN stack. Stacking the piezoelectric transducers in this manner leads to a minimal feedthrough from actuation to sense electrode, granting a high dynamic range frequency response for dynamic mode AFM. The cantilever's design allows for dual mode operation at 1 st and 2 nd resonance modes. High resolution tapping mode imaging results are reported, while the cantilever is operated at these modes. A feedback control loop is used to modify quality factor of the 1 st mode of the cantilever, using a positive position feedback (PPF) controller. Here, a faster response time is achieved by reducing the Q-factor, enabling the cantilever to track the topography at a higher scan rate. Results of bimodal AFM imaging are reported, using amplitude changes of the 1 st mode for surface topography, while material properties are encoded in phase changes of the 2 nd mode.
Photonic platforms with χ (2) nonlinearity offer new degrees of freedom for Kerr frequency comb development. Here, we demonstrate Kerr soliton generation at 1550 nm with phase-matched quadratic coupling to the 775 nm harmonic band in a single AlN microring and thus the formation of dual-band mode-locked combs. In the strong quadratic coupling regime where the χ (2) phase-matching window overlaps the pump mode, the pump-to-harmonic-comb conversion efficiency is optimized. However, the strong quadratic coupling also drastically modifies the Kerr comb generation dynamics and decreases the probability of soliton generation. By engineering the χ (2) phase-matching wavelength, we are able to achieve a balance between high conversion efficiency and high soliton formation rate under the available pump power and microring quality factors. Our numerical simulations confirm the experimental observations. These findings provide guidance on tailoring single-cavity dual-band coherent comb sources.
Electro-optic materials are paramount to achieving efficient and reliable microwave-optical signal transduction in the quantum regime. It is of great interest to investigate the performance of these materials at the quantum level and at cryogenic temperatures to assess their compatibility with superconducting circuit-based quantum systems. In this work, we present a detailed study of the microwave electric properties of single-crystal bulk LiNbO$_{3}$ and AlN at millikelvin temperatures and at the single-photon level. We characterize the materials' dielectric loss tangent throughout a wide range of electromagnetic power levels in a temperature range from a few tens of millikelvin to above 1~K. Our findings indicate that both materials' loss tangent behavior is consistent with the two-level system model up to a certain power threshold, beyond which it increases logarithmically with power. This suggests that two-level system loss mechanisms dominate at the single-photon level, while additional loss channels become relevant at higher powers and temperatures.
We report on high-quality n -Al 0.87 Ga 0.13 N-A 0.64 Ga 0.36 N heterostructures over single crystal AlN. For these pseudomorphic heterostructures, high-resolution X-ray and X-ray Topographic analysis was used to establish a threading dislocation density of 7 × 10 3 cm -2 . Using reverse composition graded n + -Al x Ga 1- x N contact layers, we obtained linear ohmic contacts with 4.3 Ω mm specific resistance. A critical breakdown field >11 MV cm -1 was also measured. In combination with the channel resistance of 2400 Ω sq -1 , these translate to a Baliga’s Figure of Merit of 2.27 GW cm -2 . This, to the best of our knowledge is the highest reported value for extreme bandgap AlGaN heterostructures.
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Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has garnered much attention recently as a promising channel material for next-generation high electron mobility transistors (HEMTs). A comprehensive experimental study of the effects of Al composition x on the transport and structural properties is lacking. We report the charge control and transport properties of polarization-induced 2D electron gases (2DEGs) in strained AlGaN quantum well channels in molecular-beam-epitaxy-grown AlN/Al x Ga 1-x N/AlN double heterostructures by systematically varying the Al content from x = 0 (GaN) to x = 0.74, spanning energy bandgaps of the conducting HEMT channels from 3.49 to 4.9 eV measured by photoluminescence. This results in a tunable 2DEG density from 0 to 3.7 × 10 13 cm 2 . The room temperature mobilities of x ≥ 0.25 AlGaN channel HEMTs were limited by alloy disorder scattering to below 50 cm 2 /(V.s) for these 2DEG densities, leaving ample room for further heterostructure design improvements to boost mobilities. A characteristic alloy fluctuation energy of ≥1.8 eV for electron scattering in AlGaN alloy is estimated based on the temperature dependent electron transport experiments.
The advent of wurtzite ferroelectrics is enabling new ferroelectric devices for computer memory that have the potential to bypass the von Neumann bottleneck due to their robust polarization and silicon compatibility. However, the atomistic switching mechanism of wurtzites is still undetermined due to the limitations of density functional theory simulation size and experimental temporal and spatial resolution. Thus, physics-informed materials engineering to reduce coercive field and breakdown in these devices has been limited. In this work, the atomistic mechanism of domain wall migration and domain growth in aluminum nitride-based wurtzites is uncovered using molecular dynamics and Monte Carlo simulations. We reveal the anomalous switching mechanism of fast 1D single columns of atoms propagating from a slow-moving 2D fractallike domain wall. We find that the critical nucleus is a single aluminum ion that breaks its bond with one nitrogen and bonds to another nitrogen; this creates a cascade that flips atoms directly only in the same column, due to the extreme locality (sharpness) of the domain walls in wurtzites. We further show how the fractallike shape of the domain wall in the 2D plane breaks assumptions in the Kolmogorov, Avrami, and Ishibashi (KAI) model and leads to the anomalously fast switching in wurtzite structured ferroelectrics.
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