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Structural, optical, and electrical properties of AlSb, AlAs, AlP, AlN, and BN thin films deposited by sputtering and evaporation
Resistivity, capacitance and dielectric loss measurements for diode reactive sputtering grown AlN films and film sandwich structures of Ta, Au and Al films
Typical metal-insulator-metal detector device is formed on quartz substrate. Base electrode is 3 to 6 nm aluminum layer, overcoated with 3 to 6 nm aluminum oxide or aluminum nitride, and capped with counter electrode of gold, lead, magnesium, or aluminum. Photoelectric yield data are given for Al-AlN-Au structure.
Two Beta prime - Sialons of composition Si2.6Al0.393y0.007O0.4N3.6 and Si2.6Al0.384Y0.014O0.4N3.6 were pressureless sintered from mixtures of Y2O3 and separately milled Beta -Si3N4, AlN, and SiO2. These Sialons had densities of over 98% of theoretical, four-point bend strengths of 460 and 155 MPa at room temperature and 1400 C, respectively, and 1400 C oxidation rates lower than those reported for hot pressed Si3N4 and for a stronger Sialon with 2.5 weight percentage Y2O3.
Si3N4, AlN, and Al2O3 were used as basic constituents in a study of the pressureless sintering of beta prime-Si3N4 solid solution as a function of temperature. Y2O3-SiO2 additions were used to promote liquid-phase sintering. The sintered specimens were characterized with respect to density, microstructure, strength, oxidation, and thermal shock resistance. Density greater than 98 percent of theoretical was achieved by pressureless sintering at 1750 C. The microstructure consisted essentially of fine-grained beta prime-Si3N4 solid solution as the major phase. Modulus of rupture strengths up to 483 MPa were achieved at moderate temperature (1000 C), but decreased to 228 MPa at 1380 C. This substantial strength loss was attributed to a glassy grain boundary phase formed during cooling from the sintering temperature. The best oxidation resistance was exhibited by a composition containing 3 mol % Y2O3-SiO2 additives. Water quench thermal shock resistance was equivalent to that of reaction sintered silicon nitride but lower than hot-pressed silicon nitride.
To establish the possible mechanism for conductivity in aluminum nitride a study was made of the electric conductivity of pure AlN and its mixtures with silicon nitride at different temperatures and partial pressures of nitrogen in the gas phase. The thermoelectromotive force was also measured. The experiments used polycrystalline samples of cylindrical shape 18 mm in diameter made of powders by hot pressing in graphite press molds at a temperature of 1973-2273 K and pressure 1,470,000 n/sqm. The items obtained by this method had porosity not over 5%. After pressing, the samples were machined to remove carbon from the surface, and were annealed in a stream of dry ammonia for 10 h at a temperature of 1273-1373 K. Electric conductivity was measured according to the bridge scheme on an alternating current of frequency 10 kHz. In order to guarantee close contact of the platinum electrodes with the surface of the samples, a thin layer of platinum was sprayed on them. Experiments were conducted in the temperature interval 1273-1573 K with a half hour delay at each assigned temperature with heating and cooling.
X = 0.75 Beta prime Sialon (a silicon aluminum oxynitride) and Sibeon (silicon beryllium oxynitride) are promising die materials. In sessile drop tests in contact with molten silicon, beryllium contamination was less than ppm and aluminum contamination 50 ppm. A shaping die of the Sialon material was successfully fabricated. Dry milling studies for the preparation of Si3N4-Al2O3-ALN mixtures were performed with butanol, acetic anhydride, oleic acid, and triethanolamine milling aids. Optimum mixing was achieved with 0.15 percent triethanolamine using a milling time of 8 hours. Preliminary evaluation of Sibeon materials indicates that they are more resistent to molten silicon attack than Sialon. Silicon contamination from the beryllium was less than aluminum contamination even though the aluminum impurity level in the Sibeon was only 450 to 1300 ppm. Work designed to produce an aluminum-free Sibeon is described.
The infrared absorption spectra of 12 kinds of metal carbides, 11 kinds of nitrides, and 7 kinds of sulfides, a total of 30 materials, were measured and the application of the infrared spectra of these materials to analytical chemistry was discussed. The measurements were done in the frequency (wave length) range of (1400 to 400/cm (7 to 25 mu). The carbides Al4C3, B4C, the nitrides AlN, BN, Si3N4, WB, and the sulfides Al2S3, FeS2, MnS, NiS and PbS were noted to have specific absorptions in the measured region. The sensitivity of Boron nitride was especially good and could be detected at 2 to 3 micrograms in 300 mg of potassium bromide.
It is pointed out that materials near the Si3N4 corner of the Si3N4-AlN-Al2O3-SiO2 quaternary, termed sialons are candidate materials for high performance applications. Hot pressed alloys in this system are useful because they possess high flexure strengths and good oxidation and creep resistance. The results of the thermal decomposition studies conducted indicate that dissociation and resulting weight loss lead to inhomogeneous specimens. Material loss comes primarily from near the surface (at least initially) thus causing differences between the composition of the surface material and the bulk. In these specimens, the O-prime phase was found to be the least stable to dissociation and the beta-prime phase the most stable. This result is in accord with the conclusions of Mitomo et al. (1979) that Si2N2O has a larger equilibrium SiO partial pressure than either the X phase or the beta-prime phase.
Titanium and Ti-8Al-1Mo-1V alloy were nitrided with an ion-beam source of nitrogen or argon and nitrogen at a total pressure of 2 x 10 to the minus 4th power to 10 x 10 to the minus 4th power torr. The treated surface was characterized by surface profilometry, X-ray diffractometry, Auger electron spectroscopy and microhardness measurements. The tetragonal Ti2N phase formed in pure titanium and Ti-8Al-1Mo-1V alloy with traces of AlN in the alloy. Two opposite processes competed during the ion-beam-nitriding process: (1) formation of nitrides in the surface layer and (2) sputtering of the nitrided layers by the ion beam. The highest surface hardnesses, about 500 kg/sq mm in titanium and 800 kg/sq mm in Ti-8Al-1Mo-1V, were obtained by ion nitriding with an ion beam of pure nitrogen at 4.2 x 10 to the minus 4th power torr at a beam voltage of 1000 V.
Laser assisted chemical vapor deposition (LCVD) of nitride insulators, using an excimer laser operating on either KrF or ArF transitions (248 nm or 193 nm respectively) was explored. The properties of silicon nitride films Deposited with 193 nm photons on quartz and silicon substrates in a SiH4, NH3, N2 and He mixture are discussed. Aluminum films were deposited at substrate temperatures from room temperature to 200 C using 248 nm or 193 nm photons to dissociate trimethylaluminum (TMA). Deposition of Al films were investigated to isolate problems associated with TMA such as C and O contamination during AlN depositions. The Al film properties were evaluated on SiO2 and Si substrates. Preliminary results were obtained for aluminum nitride films using TMA and NH3 as the gas phase Al and N donors. The properties of Cr films deposited over areas 5 square cm using 193 nm or 248 nm photons to dissociate Cr(CO) were investigated.
Sintered silicon nitrides are manufactured by sintering Si3N powder containing 2 to 15% in wt of a powder mixture composed of nitride powder of lanthanide or Y 100 parts and AIN powder less than 100 parts at 1500 to 1900 deg. temperature under a pressure of less than 200 Kg/sq. cm. The sintered Si3N has high mechanical strength in high temperature. Thus, Si3N4 93.0, Y 5.0 and AlN 2.0% in weight were wet mixed in acetone in N atom, molded and sintered at 1750 deg. and 1000 Kg/sq. cm. to give a sintered body having high hardness.
Continuous silicon carbide (SiC) fiber was added to three types of silicon nitride (Si3N4) matrices. Efforts were aimed at producing a dense Si3N4 matrix from reaction-bonded silicon nitride (RBSN) by hot-isostatic-pressing (HIP) and pressureless sintering, and from Si3N4 powder by hot-pressing. The sintering additives utilized were chosen to allow for densification, while not causing severe degradation of the fiber. The ceramic microstructures were evaluated using scanning optical microscopy. Vickers indentation was used to determine the microhardness and fracture toughness values of the matrices. The RBSN matrices in this study did not reach more than 80 percent of theoretical density after sintering at various temperatures, pressures, and additive levels. Hot-pressing Si3N4 powder produced the highest density matrices; hardness and toughness values were within an order of magnitude of the best literature values. The best sintering aid composition chosen included Y2O3, SiO2, and Al2O3 or AlN. Photomicrographs demonstrate a significant reduction of fiber attack by this additive composition.
The extractability of ammonia halides (including ammonium thiocyanate) formed as byproducts from the synthesis of Si(NH)2 via ammonolysis of the corresponding silicon tetrahalides using supercritical NH3 as the extraction medium was investigated. It was found that the NH4SCN byproduct of ammonolysis of Si(SCN)4 can be almost completely extracted from the insoluble Si(NH)2 forming a promising system for the synthesis of pure Si(NH)2, one of the best precursors for Si3N4. In addition it was found that Si3N4, AlN, BN, and Si(NH)2 are insoluble in SC ammonia. Also discussed are design considerations for a supercritical ammonia extraction unit.
An attempt has been made to improve the high temperature mechanical strength of the B2 cubic crystal structure intermetallic NiAl by dispersion strengthening. Prealloyed Ni-51 at. pct Al was cryomilled with a Y2O3 addition to form an yttria dispersoid within the intermetallic matrix. Following milling, the powder was hot extruded to full density and machined into test coupons. Compression testing between 1200 and 1400 K indicated that the cryogenic process yielded the strongest NiAl based material tested to date. Creep resistance was six times better than NiAl and twice that of a NiAl particulate composite containing 10 vol pct TiB2. Surprisingly, transmission electron microscopy revealed that the second phase was inhomogeneously distributed. Furthermore, X-ray analysis indicated that the second phase was not Y2O3 but rather AlN.
A variety of solid state powder processing methods have been examined for their potential to produce high temperature materials. These techniques included solid state diffusion, mechanical alloying, reaction milling, and exothermic reactions. While both mechanical alloying and exothermic reactions are capable of producing high temperature composites in addition to yielding solid solution and precipitation hardened alloys, reaction milling can only be used to make composite materials. Although at present this method has only been applied to make carbide strengthened Al, recent work indicates that reaction milling is capable of yielding high strength NiAl-AlN composites.
Temperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.
Turbomilling, an innovative grinding technology developed by the U.S. Bureau of Mines in the early 1960's for delaminating filler-grade kaolinitic clays, has been expanded into the areas of particle size reduction, material mixing, and process reaction kinetics. The turbomill, originally called an attrition grinder, has been used for particle size reduction of many minerals, including natural and synthetic mica, pyrophyllite, talc, and marble. In recent years, an all-polymer version of the turbomill has been used to produce ultrafine, high-purity, advanced ceramic powders such as SiC, Si3N4, TiB2, and ZrO2. In addition to particle size reduction, the turbomill has been used to produce intimate mixtures of high surface area powders and whiskers. Raw materials, TiN, AlN, and Al2O3, used to produce a titanium nitride/aluminum oxynitride (TiN/AlON) composite, were mixed in the turbomill, resulting in strength increases over samples prepared by dry ball milling. Using the turbomill as a leach vessel, it was found that 90.4 pct of the copper was extracted from the chalcopyrite during a 4-hour leach test in ferric sulfate versus conventional processing which involves either roasting of the ore for Cu recovery or leaching of the ore for several days.