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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Kim, Hyun-Jung↗
DOE OSTI2024

Transition-Metal-Related Quantum Emitters in Wurtzite AlN and GaN

Transition-metal centers exhibit a paramagnetic ground state in wide-bandgap semiconductors and are promising for nanophotonics and quantum information processing. Specifically, there is a growing interest in discovering prominent paramagnetic spin defects that can be manipulated using optical methods. Here, we investigate the electronic structure and magneto-optical properties of Cr and Mn substitutional centers in wurtzite AlN and GaN. We use state-of-the-art hybrid density functional theory calculations to determine level structure, stability, optical signatures, and magnetic properties of these centers. The excitation energies are calculated using the constrained occupation approach and rigorously verified with the complete active space configuration interaction approach. Our simulations of the photoluminescence spectra indicate that $Cr$$^{1+}_{Al}$ in AlN and $Cr$$^{1+}_{Ga}$ in GaN are responsible for the observed narrow quantum emission near 1.2 eV. We compute the zero-field splitting (ZFS) parameters and outline an optical spin polarization protocol for $Cr$$^{1+}_{Al}$ and $Cr$$^{1+}_{Ga}$. Our results demonstrate that these centers are promising candidates for spin qubits.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Record >10 MV/cm mesa breakdown fields in Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors on native AlN substrates

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3 μm separation possess a record-high breakdown field strength of ~11.5 MV/cm for an undoped Al 0.6 Ga 0.4 N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9 μm are 850 and 1500 V, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

Polarization-induced carriers play an important role in achieving high electrical conductivity in ultrawide bandgap semiconductor AlGaN, which is essential for various applications ranging from radio frequency and power electronics to deep UV photonics. Despite significant scientific and technological interest, studies on polarization-induced carriers in N-polar AlGaN are rare. We report the observation and properties of polarization-induced two-dimensional electron gases (2DEGs) in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates by systematically varying the Al content in the 8 nm top layers from x = 0 to x = 0.6, spanning energy bandgaps from 3.56 to 4.77 eV. The 2DEG density drops monotonically with increasing Al content, from 3.8 × 1013/cm2 in the GaN channel, down to no measurable conductivity for x = 0.6. Alloy scattering limits the 2DEG mobility to below 50 cm2/V s for x = 0.49. These results provide valuable insights for designing N-polar AlGaN channel high electron mobility transistors on AlN for extreme electronics at high voltages and high temperatures, and for UV photonic devices.

Physics↗
DOE OSTI2024

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

To enhance the electron mobility in quantum-well high-electron-mobility transistors (QW HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar single-crystal AlN substrates. Theoretical modeling combined with experiment shows that interface roughness scattering due to high electric field in the quantum well limits mobility. Increasing the width of the quantum well to its relaxed form reduces the internal electric field and scattering, resulting in a binary QW HEMT with a high two-dimensional electron gas (2DEG) density of 3.68×1013 cm–2, a mobility of 823 cm2/Vs, and a record-low room temperature (RT) sheet resistance of 206 Ω/□. Further reduction of the quantum well electric field yields a 2DEG density of 2.53×1013 cm–2 and RT mobility > 1000 cm2/V s. These findings will enable future developments in high-voltage and high-power microwave applications on the ultrawide bandgap AlN substrate platform.

Physics↗
DOE OSTI2023

INVESTIGATION OF THE MULTILAYER SHIELDING EFFECT THROUGH NbTiN-AlN COATED BULK NIOBIUM

Superconducting radio frequency (SRF) cavities, composed of bulk niobium (Nb), are extensively utilized in particle accelerators. To optimize their performance and extend their operational range, thin films of superconducting materials are applied to the Nb surfaces. This study focuses on investigating the magnetic field penetration characteristics of NbTiN-AlN coating on bulk niobium. The experimental setup involves measuring the magnetic field penetration across flat superconducting samples at cryogenic temperatures. One key parameter of interest is the field just before the first flux penetration, Bp which enables the observation of the multilayer shielding effect on bulk niobium under high magnetic fields. The study reveals a significant enhancement in Bp of the NbTiN-AlN coated Nb samples compared to bare Nb samples. This property holds critical importance for achieving high field performance in SRF cavities. Furthermore, the study explores the relationship between coating thickness and Bp corroborating the theoretical predictions.

Senevirathne, I. H.↗
DOE OSTI2023

AlN Base Material Development for High Temperature Application [Poster]

Polar wurtzite AlN-based alloy materials have exceptional optoelectronic and charge transport properties (e.g., Al1-xGaxN in LEDs and Al1-xScxN as a promising new ferroelectric1). Other cation substitutions include Ta 3+ , Cr 3+ , Er 3+ , Yb 3+ , and small amounts of Gd 3+ , 2-6 but ionic size effects are a serious issue, and other variables affecting solubility are underexplored in this family, hampering development of new functional AlN-based alloys.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1990

1300 K compressive properties of a reaction milled NiAl-AlN composites

When B2 crystal-structure nickel aluminide is subjected to high-intensity mechanical ball milling in a liquid nitrogen bath, or 'cryomilling', an NiAl composite is obtained which contains about 10 vol pct AlN particles. This composition arises from the incorporation of N during cryomilling; during subsequent thermomechanical processing, the N reacts with Al. While compressive testing of extruded or isostatically pressed specimens at 1300 K indicated that strength at relatively fast strain rates is slightly dependent on consolidation method, slower strain rates indicate no clear dependency on densification technique: four different consolidation methods were found to yield similar creep strengths. The creep properties of NiAl-AlN are similar to those of the single-crystal Ni-base superalloy NASAIR 100.

Whittenberger, J. Daniel↗
DOE OSTI2024

Aluminum vacancy/sulfur complex in wurtzite AlN as an optically controllable spin qubit

Using our rational methodology, we reveal a defect in wurtzite AlN that can serve as an optically controllable spin qubit. It combines an Al vacancy and a S atom substituting the neighboring N atom (V Al⁢ S N ). Linear response GW and Bethe-Salpeter equation calculations guide us to find suitable ground and excited triplet and singlet states of V Al⁢ S N . The obtained optical spin-polarization cycle is similar to that observed in the negative nitrogen-vacancy (NV – ) center in diamond. Furthermore, the calculated optical oscillator strengths for V Al⁢ S N suggest that, in contrast to the NV – center, the optical emission in the singlet and triplet states have comparable rates, which is favorable for the qubit functionality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Materials Data on AlN by Materials Project

AlN is Wurtzite structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. Al3+ is bonded to five equivalent N3- atoms to form a mixture of corner and edge-sharing AlN5 trigonal bipyramids. There are three shorter (1.91 Å) and two longer (2.09 Å) Al–N bond lengths. N3- is bonded to five equivalent Al3+ atoms to form a mixture of corner and edge-sharing NAl5 trigonal bipyramids.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on AlN by Materials Project

AlN is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Al3+ is bonded to six equivalent N3- atoms to form a mixture of corner and edge-sharing AlN6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Al–N bond lengths are 2.03 Å. N3- is bonded to six equivalent Al3+ atoms to form a mixture of corner and edge-sharing NAl6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on AlN by Materials Project

AlN is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Al3+ is bonded to four equivalent N3- atoms to form corner-sharing AlN4 tetrahedra. All Al–N bond lengths are 1.91 Å. N3- is bonded to four equivalent Al3+ atoms to form corner-sharing NAl4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on AlN by Materials Project

AlN is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. Al3+ is bonded to four equivalent N3- atoms to form corner-sharing AlN4 tetrahedra. There is three shorter (1.90 Å) and one longer (1.91 Å) Al–N bond length. N3- is bonded to four equivalent Al3+ atoms to form corner-sharing NAl4 tetrahedra.

36 MATERIALS SCIENCE↗
NASA NTRS1996

A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth

A structural examination of aluminum nitride growth on [111] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out-of-plane tilts were evident. This article examines these issues with a structural examination of AlN and GaN/AlN on silicon and compares the findings to those reported in the literature.

GaN AlN Si epitaxial aluminum gallium nitride↗
DOE OSTI2021

Strongly temperature dependent ferroelectric switching in AlN, Al 1-x Sc x N, and Al 1-x B x N thin films

This manuscript reports the temperature dependence of ferroelectric switching in Al 0.84 Sc 0.16 N, Al 0.93 B 0.07 N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Furthermore, over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Physics↗
DOE OSTI2024

Acoustic and optical phonon frequencies and acoustic phonon velocities in Si-doped AlN thin films

We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metal–organic chemical vapor deposition on sapphire substrates. The Brillouin–Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ∼300 m/s at the doping level of 3 × 1019 cm−3. The knowledge of the acoustic phonon velocities can be used for the optimization of the ultra-wide bandgap semiconductor heterostructures and for minimizing the thermal boundary resistance of high-power devices.

Physics↗