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At least 55 records · Page 3

Growth of ultra-flat ultra-thin alkali antimonide photocathode films

Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs 3 Sb on graphene-coated 4H–SiC (Gr/4H–SiC), 3C–SiC, and Si 3 N 4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs 3 Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (<30 nm). For the Si 3 N 4 substrate, film growth is shown to be polycrystalline, while films grown on Gr/4H–SiC show a high degree of ordering with signs of epitaxy.

36 MATERIALS SCIENCE↗

Technology to Establish a Factory for High QE Alkali Antimonide Photocathodes

Intense electron beams are key to a large number of scientific endeavors, including electron cooling of hadron beams, electron-positron colliders, secondary-particle beams such as photons and positrons, sub-picosecond ultrafast electron diffraction (UED), and new high gradient accelerators that use electron-driven plasmas. The last decade has seen a considerable interest in pursuit and realization of novel light sources such as Free Electron Lasers [1] and Energy Recovery Linacs [2] that promise to deliver unprecedented quality x-ray beams. Many applications for high-intensity electron beams have arisen in recent years in high-energy physics, nuclear physics and energy sciences, such as recent designs for an electron-hadron collider at CERN (LHeC) [3], and beam coolers for hadron beams at LHC and eRHIC [4,5]. Photoinjectors are used at the majority of high-brightness electron linacs today, due to their efficiency, timing structure flexibility and ability to produce high power, high brightness beams. The performance of light source machines is strongly related to the brightness of the electron beam used for generating the x-rays. The brightness of the electron beam itself is mainly limited by the physical processes by which electrons are generated. For laser based photoemission sources this limit is ultimately related to the properties of photocathodes [6]. Most facilities are required to expend significant manpower and money to achieve a workable, albeit often non-ideal, compromise photocathode solution. If entirely fabricated in-house, the photocathode growth process itself is laborious and not always reproducible: it involves the human element while requiring close adherence to recipes and extremely strict control of deposition parameters. Lack of growth reliability and as a consequence, slow adoption of viable photoemitter types, can be partly attributed to the absence of any centralized facility or commercial entity to routinely provide high peak current capable, low emittance, visible-light sensitive photocathodes to the myriad of source systems in use and under development. Successful adoption of photocathodes requires strict adherence to proper fabrication, operation, and maintenance methodologies, necessitating specialized knowledge and skills. Key issues include the choice of photoemitter material, development of a more streamlined growth process to minimize human operator uncertainties, accommodation of varying photoemitter substrate materials and geometries, efficient transport and insertion mechanisms preserving the photo-yield, and properly conveyed photoemitter operational and maintenance methodologies. AES, in collaboration with Cornell University in a Phase I STTR, developed an on-demand industrialized growth and centralized delivery system for high-brightness photocathodes focused upon the alkali antimonide photoemitters. To the end user, future photoemitter sourcing will become as simple as other readily available consumables, rather than a research project requiring large investments in time and personnel.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

P-n junctions formed in gallium antimonide

Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.

Clough, R.↗

Thermocapillary convection in microgravity crystal growth melts of indium-antimonide

Results of two recent crystal growth experiments conducted aboard Skylab are analyzed for thermoconvective aspects. Theoretical temperature and velocity profiles in the crystal melts are predicted via computer modeling. These results are compared with experimental data obtained from Skylab investigators. From theoretical considerations, both indium-antimonide experiments should have exhibited substantial thermocapillary convection, but did not due to probable oxide film interference and/or opposing solutal effects.

Bourgeois, S. V., Jr.↗

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗

X-ray photoemission studies of superficially oxidized cesium antimonide photoemitters

Superficially oxidized cesium antimonide photoemitting surfaces prepared in ultrahigh vacuum were studied by X-ray photoelectron spectroscopy. Oxidation of Cs3Sb to produce a surface with enhanced photosensitivity converts part of the antimony to elemental antimony and part of the cesium to cesium suboxide. The latter is identified on the basis of an O1 s peak at 531.3 eV, characteristic of Cs11O3. The production of Cs2O is not ruled out in this process since its signature at 527.5 eV is masked by an antimony shake-up peak at 527 eV.

Bates, C. W., Jr.↗

Study of photoconductive indium antimonide

Indium antimonide (InSb) material was assessed for use as photoconductive infrared detectors under low background conditions. Such detectors must be more rugged, and have lower capacitance, than the common photovoltaic InSb detector. Electronic grade n-type InSb was etched to 50 micrometers thickness, and tin and gold contacts were applied by evaporation. The test devices showed a relatively low ultimate impedance: 7 Mohms at 4.2 K. This was attributed to the presence of impurity levels of very shallow energies, and this material was judged unsuitable for low background detection.

Low, F. J.↗

Operation of integrating indium antimonide linear arrays at 65 K and below

The combination of a FET switch non-CCD readout architecture with high-quality mesa-photovoltaic indium-antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-micron region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (+ or - 2 percent). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and greater than 12 seconds at 65 K have been achieved. For both devices, kTC read noise levels of less than 1200 electrons have been measured.

Bailey, G. C.↗

Integrating indium antimonide linear arrays at 65K and below

A schematic is presented of a simplified electronic architecture of experimental 128 element infrared imager. Tables are given of sample diode responsivity, 512 element focal plane performance summary, and 128 element FPA mechanical and electrical characteristics. Typical 43 x 43 micron detector IV characteristics at 84 K are given, along with typical 43 x 43 micron Indium Antimonide CV characteristic at 83 K.

Bailey, Gary C.↗

Recent progress in the development of antimonide-based mid-ir interband cascade lasers

Antimonide-based type-II interband cascade lasers are promising in becoming efficient and compact mid-infrared light sources for many applications such as gas sensing and environmental monitoring. Significant progress toward such a goal has recently been made in terms of achieving low threshold current densities, high temperature operation, and continuous wave operation of single-mode distributed feedback lasers. We review the recent progress of Sb-based mid-IR IC lasers and address the requirements for further improvements in their performance.

semiconductor superlattices↗

Antimonides T2SL Mid-Wave and Long-Wave Infrared Focal Plane Arrays for Earth Remote Sensing Applications

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The initial BIRD devices (such as the nBn and the XBn) used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2μm and ~4μm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5μm) MWIR atmospheric transmission window. The T2SL BIRD devices not only covers the full MWIR atmospheric transmission window, but the full LWIR atmospheric transmission window and beyond. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability.

Ghuman, Parminder↗

Room temperature aluminum antimonide radiation detector and methods thereof

In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗