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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Reactor scale simulations of ALD and ALE: Ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor

Here, we have developed a simulation tool to model self-limited processes such as atomic layer deposition (ALD) and atomic layer etching inside reactors of arbitrary geometry as well the output of in situ quartz crystal microbalance and mass spectrometry. We have applied this model to two standard types of cross-flow reactors: a cylindrical tube reactor and a model 300 mm wafer reactor, and explored both ideal and nonideal self-limited kinetics. The model results are in agreement with experimental results and analytic expressions obtained using a simple plug-flow model for the cylindrical tube reactor. We also extended the simulations to consider two nonideal self-limited processes: soft-saturating processes characterized by a slow reaction pathway and processes where surface by-products can compete with the precursor for the same pool of adsorption sites. Our results show that it is possible to have a self-limited process with saturated yet inhomogeneous growth profiles due to the competition of reactor by-products. This is in agreement with experimental observations for titanium dioxide ALD from titanium tetraisopropoxide and titanium tetrachloride precursors.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2016

Band diagram and rate analysis of thin film spinel LiMn 2 O 4 formed by electrochemical conversion of ALD-grown MnO

Nanoscale spinel lithium manganese oxide is of interest as a high-rate cathode material for advanced battery technologies among other electrochemical applications. In this work, the synthesis of ultrathin films of spinel lithium manganese oxide (LiMn 2 O 4 ) between 20 and 200 nm in thickness by room-temperature electrochemical conversion of MnO grown by atomic layer deposition (ALD) is demonstrated. The charge storage properties of LiMn 2 O 4 thin films in electrolytes containing Li + , Na + , K + , and Mg 2+ are investigated. A unified electrochemical band-diagram (UEB) analysis of LiMn 2 O 4 informed by screened hybrid density functional theory calculations is also employed to expand on existing understanding of the underpinnings of charge storage and stability in LiMn 2 O 4 . It is shown that the incorporation of Li + or other cations into the host manganese dioxide spinel structure (λ-MnO 2 ) stabilizes electronic states from the conduction band which align with the known redox potentials of LiMn 2 O 4 . Furthermore, the cyclic voltammetry experiments demonstrate that up to 30% of the capacity of LiMn 2 O 4 arises from bulk electronic charge-switching which does not require compensating cation mass transport. As a result, the hybrid ALD-electrochemical synthesis, UEB analysis, and unique charge storage mechanism described here provide a fundamental framework to guide the development of future nanoscale electrode materials for ion-incorporation charge storage.

36 MATERIALS SCIENCE↗
DOE OSTI2022

3D LiMn 2 O 4 nThin Film Deposited by ALD: A Road toward High-Capacity Electrode for 3D Li-Ion Microbatteries

Miniaturized electronics suffer from a lack of energy autonomy. In that context, the fabrication of lithium-ion solid-state microbatteries with high performance is mandatory for powering the next generation of portable electronic devices. Here, the fabrication of a thin film positive electrode for 3D Li-ion microbatteries made by the atomic layer deposition (ALD) method and in situ lithiation step is demonstrated. The 3D electrodes based on spinel LiMn 2 O 4 films operate at high working potential (4.1 V vs Li/Li + ) and are capable of delivering a remarkable surface capacity (approximate to 180 mu Ah cm -2 ) at low C-rate while maintaining more than 40 mu Ah cm -2 at C/2 (time constant = 2 h). Both the thickness of the electrode material and the 3D gain of the template are carefully tuned to maximize the electrode performance. Further, advanced characterization techniques such as transmission electron and X-ray transmission microscopies are proposed as perfect tools to study the conformality of the deposited films and the interfaces between each layer: no interdiffusion or segregation are observed. This work represents a major issue towards the fabrication of 3D-lithiated electrode by ALD-without any prelithiation step by electrochemical technique-making it an attractive solution for the fabrication of 3D Li-ion solid-state microbatteries with semiconductor processing methods.

3D Li-ion micro-batteries↗
DOE OSTI2025

Carboxyl-functionalized perovskite enables ALD growth of a compact and uniform ion migration barrier

Mixed-halide wide-band-gap perovskites are critical components of highly efficient tandem cells, but their operating stability is limited by halide migration. Metal oxides deposited via atomic layer deposition (ALD) have been shown to block halide migration; however, previously pursued methods result in inhomogeneous nucleation and growth. We hypothesized that functionalizing the perovskite surface with ALD-active carboxyl groups could promote nucleation and enable higher-temperature metal oxide growth. We find that 5-ammonium valeric acid iodide (5-AVAI) facilitates the formation of a compact and uniform aluminum oxide (Al 2 O 3 ) layer and allows growth at 100°C compared with the previous limit of 75°C. We demonstrate that halide migration into the C 60 electron transport layer is reduced by a factor of 10 compared with the reference case. Finally, Al 2 O 3 -capped perovskite solar cells with a band gap of 1.78 eV retain 90% of their initial power conversion efficiency after 1,000 h of continuous operation under 1-sun illumination at 55°C.

Al2O3↗
DOE OSTI2019

Formation of Unsaturated Hydrocarbons and Hydrogen: Surface Chemistry of Methyltrioxorhenium(VII) in ALD of Mixed-Metal Oxide Structures Comprising Re(III) Units

We present the full investigation of the atomic layer deposition (ALD) of a mixed rhenium-aluminum oxide, namely ReAl 2 O 3 CH 3 , a material with tunable resistance, comprising the building unit of conductive rhenium oxides, ReOx. The deposition, involving methyltrioxorhenium(VII) (MeReO 3 , MTO) and trimethylaluminum (TMA), was analyzed by employing complementary in situ diagnostic quartz-crystal microbalance (QCM), Fourier-transform infrared (FT-IR) spectroscopy, and quadrupole mass spectrometry (QMS) to explore and reveal the underlying growth mechanism of this material. A proposed mechanism includes reductive elimination steps, thereby creating a stable Re(III)-containing thin film, making this ALD process unique regarding its growth. In addition, as proven by QMS, the surface reactions include the formation of hydrogen and unsaturated hydrocarbons. From this straightforward process, an extraordinarily high growth rate of 4.5 angstrom cycle -1 at temperatures as low as 150 °C was obtained. This material was found to exhibit highly promising electrical properties in terms of low thermal coefficient of resistance (TCR) in combination with high resistivity. By blending thin films of ReAl 2 O 3 CH 3 with additional layers (1, 2, or 3) of Al 2 O 3 , we were able to fine-tune the electrical resistivity in the range of 3.9 x 10(6) -1.5 x 10 11 Ω.cm. Simultaneously, the TCR was lowered to about -0.014 degrees °C -1 , making this material highly resistive over a broad temperature range and a promising candidate for advanced detector applications, e.g., multichannel plates (MCPs).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Thermal Chemistry of Nickel Diketonate Atomic Layer Deposition (ALD) Precursors on Tantalum and Silicon Oxide Surfaces

The mechanism of the thermal conversion of both bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II) (Ni(TMHD) 2 ) and the protonated ligand (TMHD-H) adsorbed on TaO x and SiO 2 /TaO x surfaces was characterized under ultrahigh vacuum (UHV) by a combination of temperature-programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS) experiments. In this work, A stepwise decomposition was observed with Ni(TMHD) 2 encompassing at least four different stages: (1) a ligand loss, to release TMHD-H; (2) a surprising ligand fractioning via the scission of an inner C–C bond within the central β-diketonate moiety to produce an aldehyde (pivaldehyde) and a ketone (pinacolone); (3) further ligand splitting following a more extensive cracking to yield an olefin (from dehydrogenation of the terminal tert-butyl group), carbon monoxide, and adsorbed methylene groups; and finally, (4) the loss of one oxygen atom from the remaining ligands to produce the corresponding enone. As these conversions take place, the Ni ion is reduced, first to a partially oxidized intermediate, as the first ligand is removed, and then to its metallic state as the remaining organic fragments migrate to the surface. A similar sequence was seen on both surfaces, but with the transitions taking place at higher temperatures on SiO 2 . The implications of these results to the surface chemistry of other ALD precursors and to the design of ALD processes are discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

ALD with Alternative Coreactants: Which Work, Which Do Not, and Why

In this paper, we present a combined experimental and theoretical study that systematically evaluates a series of alcohols (i.e., primary, secondary, and tertiary) as coreactants for trimethylaluminum (TMA)-based atomic layer deposition (ALD) of Al 2 O 3 . We employed in situ quartz crystal microbalance techniques and ex situ X-ray photoelectron spectroscopy to probe growth across a range of temperatures from T = 120 to 285 °C. Dispersion-inclusive hybrid density functional theory was employed to identify potential reaction pathways and compute corresponding Gibbs free-energy barriers and rate coefficients. Experimentally on an Al 2 O 3 surface, sustained thin-film growth, where the rate is constant over many cycles, was only observed with tertiary alcohols (tert-butanol and 2-methyl-2-butanol) at elevated temperatures (e.g., T = 285 °C); for tert-butanol specifically, sustained growth also occurred at T = 240 °C, with no sustained growth at or below T = 210 °C. Growth using primary and secondary alcohols decayed to a negligible value after only 2–3 cycles on an Al 2 O 3 surface at all tested temperatures. Intentional trace additions of H 2 O to anhydrous alcohols restored sustained growth but at reduced deposition rates relative to pure H 2 O. Theoretical analysis supports a bimolecular alkoxy β-H elimination mechanism as the primary reaction pathway: initiated by the formation of a bound alkoxy species, the subsequent β-H elimination step is rate-determining, with a barrier that systematically decreases as the degree of the alcohol coreactant is increased from primary to secondary to tertiary. Computed rate coefficients (k) also indicate a strong temperature dependence (with k increasing by ∼4–5 orders of magnitude from T = 120 to 285 °C) and are consistent with the experimental observation that only tertiary alcohols lead to steady thin-film growth at elevated temperatures. This integrated approach establishes why only certain alcohols can sustain Al 2 O 3 ALD and delivers a predictive framework for identifying effective alcohol coreactants.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes

Lithium metal anodes can largely enhance the energy density of rechargeable batteries because of the high theoretical capacity and the high negative potential. However, the problem of lithium dendrite formation and low Coulombic efficiency (CE) during electrochemical cycling must be solved before lithium anodes can be widely deployed. Herein, a new atomic layer deposition (ALD) chemistry to realize the low-temperature synthesis of homogeneous and stoichiometric lithium fluoride (LiF) is reported, which then for the first time, as far as we know, is deposited directly onto lithium metal. The LiF preparation is performed at 150 °C yielding 0.8 Å/cycle. The LiF films are found to be crystalline, highly conformal, and stoichiometric with purity levels >99%. Nanoindentation measurements demonstrate the LiF achieving a shear modulus of 58 GPa, 7 times higher than the sufficient value to resist lithium dendrites. When used as the protective coating on lithium, it enables a stable Coulombic efficiency as high as 99.5% for over 170 cycles, about 4 times longer than that of bare lithium anodes. The remarkable battery performance is attributed to the nanosized LiF that serves two critical functions simultaneously: (1) the high dielectric value creates a uniform current distribution for excellent lithium stripping/plating and ultrahigh mechanical strength to suppress lithium dendrites; (2) the great stability and electrolyte isolation by the pure LiF on lithium prevents parasitic reactions for a much improved CE. Here, this new ALD chemistry for conformal LiF not only offers a promising avenue to implement lithium metal anodes for high-capacity batteries but also paves the way for future studies to investigate failure and evolution mechanisms of solid electrolyte interphase (SEI) using our LiF on anodes such as graphite, silicon, and lithium.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides

Materials for nanophotonic devices ideally combine ease of deposition, very high refractive index, and facile pattern formation through lithographic templating and/or etching. In this work, we present a scalable method for producing high refractive index WS 2 layers by chemical conversion of WO 3 synthesized via atomic layer deposition (ALD). These conformal nanocrystalline thin films demonstrate a surprisingly high index of refraction (n > 3.9), and structural fidelity compatible with lithographically defined features down to ~10 nm. Although this process yields highly polycrystalline films, the optical constants are in agreement with those reported for single crystal bulk WS 2 . Subsequently, we demonstrate three photonic structures - first, a two-dimensional hole array made possible by patterning and etching an ALD WO 3 thin film before conversion, second, an analogue of the 2D hole array first patterned into fused silica before conformal coating and conversion, and third, a three-dimensional inverse opal photonic crystal made by conformal coating of a self-assembled polystyrene bead template. Furthermore these results can be trivially extended to other transition metal dichalcogenides, thus opening new opportunities for photonic devices based on high refractive index materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Towards ALD thin film stabilized single-atom Pd 1 catalysts

Supported precious metal single-atom catalysts have shown interesting activity and selectivity in recent studies. However, agglomeration of these highly mobile mononuclear surface species can eliminate their unique catalytic properties. In this paper, we study a strategy for synthesizing thin film stabilized single-atom Pd 1 catalysts using atomic layer deposition (ALD). The thermal stability of the Pd 1 catalysts is significantly enhanced by creating a nanocavity thin film structure. In situ infrared spectroscopy and Pd K-edge X-ray absorption spectroscopy (XAS) revealed that the Pd 1 was anchored on the surface through chlorine sites. The thin film stabilized Pd 1 catalysts were thermally stable under both oxidation and reduction conditions. The catalytic performance in the methanol decomposition reaction is found to depend on the thickness of protecting layers. While Pd 1 catalysts showed promising activity at low temperature in a methanol decomposition reaction, 14 cycle TiO 2 protected Pd 1 was less active at high temperature. Pd L 3 edge XAS indicated that the low reactivity compared with Pd nanoparticles is due to the strong adsorption of carbon monoxide even at 250 °C. Lastly, these results clearly show that the ALD nanocavities provide a basis for future design of single-atom catalysts that are highly efficient and stable.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Interfaces Between CdTe and ALD Al 2 O 3

In this work, we present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxides that are initially present on air-exposed CdTe surfaces. TRPL on the resulting CdTe interface indicates some degree of passivation. On the other hand, postgrowth treatment of Al 2 O 3 /CdTe structures with CdCl 2 and oxygen causes regrowth of Te oxides. Some of these structures show improved lifetimes, thereby pointing toward a critical role for Te oxides in interfacial CdTe passivation by Al 2 O 3 . Lastly, direct measurement of band positions with XPS indicates that the passivation is caused primarily by chemical rather than field effect mechanisms.

14 SOLAR ENERGY↗
DOE OSTI2026

Bias-Modulated ALD of ZnO: Insights into Precursor-Surface Interactions for ZnO Films

Atomic layer deposition (ALD) is widely used to deposit conformal thin films but is often limited in the tunability of the resulting material’s properties. Substrate bias and electric fields alter precursor-surface interactions and provide means to tune material properties. To explore this, we performed zinc oxide (ZnO) ALD using diethylzinc (DEZ) and water on silicon native oxide substrates at 150 °C in a sample holder designed to create a static electrical field by biasing one plate of a parallel plate capacitor-style sample holder during deposition. ZnO films prepared in an electric field/on a biased sample holder were thinner, changed relative crystalline composition, and contained more carbon compared to samples grown in identical sample holders without bias. The thickness was independent of the magnitude of the eletric field between plates, indicating that the primary driver for the change was substrate biasing not the electric field between plates of the parallel plate capacitor-style sample holder. Density functional theory calculations showed enhanced electron migration between dissociatively adsorbed DEZ molecules and the ZnO (002) facet with increasing force from an electric field at the substrate surface, which strengthens the electronic interactions between the surface and the adsorbate. These models offer a compelling explanation for the inhibited growth, changes in the crystallinity, and increase in carbon content of films grown in an electric field/on biased plates.

Jones, Jessica C. (ORCID:0000000174754620)↗
DOE OSTI2016

Hydrogen Sorption Kinetics on Bare and Platinum-Modified Palladium Nanofilms, Grown by Electrochemical Atomic Layer Deposition (E-ALD)

Nanofilms of Pd were grown using an electrochemical form of atomic layer deposition (E-ALD) on 100 nm evaporated Au films on glass. Multiple cycles of surface-limited redox replacement (SLRR) were used to grow deposits. Each SLRR involved the underpotential deposition (UPD) of a Cu atomic layer, followed by open circuit replacement via redox exchange with tetrachloropalladate, forming a Pd atomic layer: one E-ALD deposition cycle. That cycle was repeated in order to grow deposits of a desired thickness. 5 cycles of Pd deposition were performed on the Au on glass substrates, resulting in the formation of 2.5 monolayers of Pd. Those Pd films were then modified with varying coverages of Pt, also formed using SLRR. The amount of Pt was controlled by changing the potential for Cu UPD, and by increasing the number of Pt deposition cycles. Hydrogen absorption was studied using coulometry and cyclic voltammetry in 0.1 M H 2 SO 4 as a function of Pt coverage. The presence of even a small fraction of a Pt monolayer dramatically increased the rate of hydrogen desorption. However, this did not reduce the films’ hydrogen storage capacity. The increase in desorption rate in the presence of Pt was over an order of magnitude.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Stabilization of Ni-YSZ Anodes in Solid Oxide Fuel Cells using an ALD-Grown Aluminum Titanate Interlayer

The effect of an Al 2 TiO 5 (ALT) interlayer between Ni and YSZ on enhancing the thermal stability of Ni-YSZ solid oxide fuel cell was examined. Atomic layer deposition (ALD) was used to provide precise control of the structure and thickness of the ALT interlayer. The study's findings demonstrate that a 2 nm thick ALT interlayer deposited by ALD does not adversely affect the cell's ohmic resistance and effectively prevents Ni sintering and the loss of active area during high-temperature heat treatments. ALT layers thicker than 2 nm, although they enhanced Ni stability, were found to impede oxygen ion transport in the electrode and significantly increase the ohmic resistance of the cell, leading to a decline in performance.

25 ENERGY STORAGE↗
DOE OSTI2023

CO Oxidation Catalyzed by Au Dispersed on SBA-15 Modified with TiO2 Films Grown via Atomic Layer Deposition (ALD)

It has been established that gold, when in nanoparticle (NP) form and in contact with reducible oxides, can promote oxidation reactions under mild conditions. Here, we report results from our exploration of the catalytic oxidation of carbon monoxide using catalysts where Au NPs were combined with thin titanium oxide films deposited on SBA-15 using atomic layer deposition (ALD). Both orders of deposition, with TiO2 added either before or after Au dispersion, were tested for two titania film thicknesses amounting to about half and full TiO2 monolayers. The resulting catalysts were characterized using various techniques, mainly electron microscopy and N2 adsorption–desorption isotherms, and the kinetics of the oxidation of CO with O2 were followed using infrared absorption spectroscopy. A synergy between the Au and TiO2 phases as it relates to the bonding and conversion of CO was identified, the tuning of which could be controlled by varying the synthetic parameters. The ALD of TiO2 films proved to be an effective way to maximize the Au-TiO2 interface sites, and with that help with the activation of molecular oxygen.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2011

Enabling High Performance Instruments for UV Astronomy and Space Exploration with ALD

Benefits of Atomic Layer Deposition (ALD) for UV instruments and application are: (1) Ultrathin, highly conformal, and uniform films over arbitrarily large surface area (2) High quality films (density, roughness, conductivity, etc.) (3) Angstrom level control of stoichiometry, interfaces, and surface properties (3a) Multilayer nanolaminates/nanocomposites (3b) Low temperature surface engineering UV flight applications enabled by ALD. (1) Anti -reflective coatings/Mirrors/Filters/Optics for UV/Vis/NIR Detectors (2) Surface Passivation for III -N detectors

quantum efficiency↗
NASA NTRS2012

Enabling High Performance Instruments for Astronomy and Space Exploration and ALD

Benefits of ALD for NASA instruments and applications: a) Ultrathin, highly conformal, and uniform films over arbitrarily large surface area. b). High quality films (density, roughness, conductivity, etc.) . Angstrom level control of stoichiometry, interfaces, and surface properties: 1) Multilayer nanolaminates/nanocomposites. 2) Low temperature surface engineering. Flight applications enabled by ALD: a) Anti-reflective coatings/Mirrors/Filters/Optics for UV/Vis/NIR Detectors. b) Superconducting Films for Submillimeter Astronomy.

Anti?reflective coatings↗