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At least 523 records · Page 29

Potential absence of observed π2 linear-chain structures in 14O via 10C(α,α) resonances scattering

Background: The preference for light nuclear systems to coagulate into -particle clusters has been well-studied. The possibility of a linear chain configuration of -particles would allow for a new way to study this phenomenon. Purpose: A rotational band of states in C has been claimed showing a linear chain structure. The mirror system, O, has been studied here to examine how this linear chain structure is affected by replacing the valence neutrons with protons. Method: A beam of C was incident into a chamber filled with He:CO gas with the tracks recorded inside the TexAT Time Projection Chamber and the recoil -particles detected by a silicon detector array to measure the cross section. Results: The experimental cross section was compared with previous studies and fit using R-Matrix theory with the previously-observed O states being transformed to the C using mirror symmetry. The measured cross section does not replicate the claimed states, with the predicted cross section exceeding that observed at several energies and angles. Conclusion: A series of possibilities are highlighted with the most likely being that the originally-seen C states did not constitute a rotational band with a potentially incorrect spin assignment due to the limitations of the angular correlation method with non-zero spin particles. The work highlights the difficulties in measuring broad resonances corresponding to a linear chain state in a high level density.

Bishop, J.↗

Impact of external screening on the valence and core level photoelectron spectra of monolayer W⁢S 2

Transition metal dichalcogenides (TMDs) represent an emerging class of layered materials with applications in microelectronics, optoelectronics, photonics, and catalysis. The confinement of charge carriers within the highly anisotropic, quasi-two-dimensional geometry of one-layer (1L) TMDs leads to reduced, variable dielectric screening, giving rise to a quasiparticle band gap that is highly susceptible to the surrounding dielectric environment. Here, exploiting the contrasting external dielectric environments of gold-supported and suspended 1L W⁢S 2 , we show how the electronic states of W⁢S 2 under the effective and ineffective screening environments align at a junction made within the same sheet of material. Photoelectron spectra point to the close alignment of the charge neutrality levels of W⁢S 2 in both environments, and the breakdown of rigid shifts between the valence states and core levels with the core levels shifting more than twice as much as the valence states. Furthermore, the effectively screened W⁢S 2 exhibits a valence state with the photoemission linewidth twice as large as the ineffectively screened suspended W⁢S 2 , presumably originated from the locally varying W⁢S 2 -Au distance and substrate disorders. Collectively, these findings provide key insights into the electronic behavior of W⁢S 2 and its photoemission process with the electronic states renormalized according to the external screening environments.

Dielectric properties↗

Observation of an Unexpected n -Type Semiconducting Behavior in the New Ternary Zintl Phase Eu 3 InAs 3

The ternary arsenides Eu 3 InAs 3 and Sr 3 InAs 3 have been obtained by reactions of the elements in In flux at 1373 K. Structure elucidation by single-crystal X-ray diffraction reveals that Eu 3 InAs 3 and Sr 3 InAs 3 adopt the same orthorhombic structure (space group Pnma, Z = 4, Ca 3 AlAs 3 structure type) with unit cell parameters a = 12.9179(9) Å, b = 4.3990(3) Å, c = 13.9337(10) Å and a = 13.0218(11) Å, b = 4.4364(4) Å, c = 14.1339(12) Å, respectively. The structure consists of linear chains of corner-sharing InAs4 tetrahedra, [InAs 2 As 2/2 ] 6– , and Eu 2+ /Sr 2+ cations. Therefore, both Eu 3 InAs 3 and Sr 3 InAs 3 are valence-precise Zintl phases. As expected from the closed-shell electronic configurations, semiconducting behavior is confirmed by resistivity measurements on single crystals for both and by electronic band structure calculations for Sr 3 InAs 3 . The temperature dependence of resistivity and the computational work are in agreement that Eu 3 InAs 3 and Sr 3 InAs 3 are intrinsic semiconductors with narrow band gaps. Thermopower measurement on single-crystalline samples of Eu 3 InAs 3 shows that in the whole measured temperature range, from 300 to 700 K, the values for the Seebeck coefficient are negative. The observation of a negative Seebeck coefficient with very large absolute value (>400–500 μV K –1 at 700 K) is unexpected among the Zintl phases and suggestive that electrons are the majority charge carriers. Such a rare, n-type charge transport in an undoped compound such as Eu 3 InAs 3 , a material that has not been purposely optimized, could indicate native “defect” chemistry, and not extrinsic doping, as a reason for the unusual behavior. Here, a possible explanation involves a mixed-valent Eu 2+ /Eu 3+ state, which might be inferred from the measured effective paramagnetic moment of 7.2 μB per Eu atom, which is lower than the theoretically predicted value for free-ion moment of 7.9 μ B /Eu.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electron-doping-induced destabilization of the dimerized insulating state in monolayer IrTe 2

The ability to tune the electronic phases of two-dimensional (2D) materials through external perturbations provides a powerful route to engineer functional nanoscale systems. In particular, the ground state of monolayer (ML) 1T-IrTe 2 is highly sensitive to the interplay between local chemical bonding and global electronic topology, leading to a unique 2 × 1 dimerized insulating phase. Here, we present an angle-resolved photoemission study on the evolution of the electronic structure in ML IrTe 2 induced by in situ Rb adsorption. We find that Rb adsorption suppresses the 2 × 1 dimerized phase in ML IrTe 2 , inducing a clear insulator-to-metal transition. This transition is characterized by a reconstruction of the band topology toward a bilayer-like metallic configuration. Combined with first-principles calculations, our results demonstrate that the collapse of the insulating state originates from Ir valence change and suppression of Fermi surface nesting-driven instabilities. Our findings establish ML IrTe 2 as a model system for investigating instability-driven phase control in 2D materials and highlight its potential for tunable electronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation

Here, we report the first nonjellium, systematic, density functional theory (DFT) study of intrinsic and extrinsic defects and defect levels in zinc-blende (cubic) gallium nitride. We use the local moment counter charge (LMCC) method, the standard Perdew-Becke-Ernzerhoff (PBE) exchange-correlation potential, and two pseudopotentials, where the Ga 3$\textit{d}$ orbitals are either in the core ($d^0$) or explicitly in the valence set ($d^{10}$). We studied 64, 216, 512, and 1000 atom supercells, and demonstrated convergence to the infinite limit, crucial for delineating deep from shallow states near band edges, and for demonstrating the elimination of finite cell-size errors. Contrary to common claims, we find that exact exchange is not required to obtain defect levels across the experimental band gap. As was true in silicon, silicon carbide, and gallium arsenide, the extremal LMCC defect levels of the aggregate of defects yield an effective LMCC defect band gap that is within 10% of the experimental gap (3.3 eV) for both pseudopotentials. We demonstrate that the gallium vacancy is more complicated than previously reported. There is dramatic metastability–a nearest-neighbor nitrogen atom shifts into the gallium site, forming an antisite, nitrogen vacancy pair, which is more stable than the simple vacancy for positive charge states. Our assessment of the $d^0$ and $d^{10}$ pseudopotentials yields minimal differences in defect structures and defect levels. The better agreement of the $d^0$ lattice constant with experiment suggests that the more computationally economical $d^0$ pseudopotentials are sufficient to achieve the fidelity possible within the physical accuracy of DFT, and thereby enable calculations in larger supercells necessary to demonstrate convergence with respect to finite size supercell errors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Unraveling structural, electronic, and magnetic ambiguities in P⁢b 1−𝛿⁢ Cr⁢O 3 with an insulating charge-transfer band structure

As a recently identified Mott system, PbCr⁢O 3 remains largely unexplored, especially for its band structure, leading to many contentious issues on its structural, electronic, and magnetic properties. Here we present a comprehensive study of two different P⁢b 1−𝛿⁢ Cr⁢O 3 (δ = 0 and 0.15) samples involving atomic deficiency prepared under pressure. By means of state-of-the-art diffraction techniques, the crystal structure of PbCr⁢O 3 is definitively determined to adopt the pristine 𝑃𝑚⁢$\overline{3}$𝑚 symmetry, rather than other previously misassigned structures of M2-Pm$\overline{3}$⁢𝑚 and Pmnm. The two materials exhibit a similar charge-transfer-type insulating band structure, and the charge-transfer effect splits both Cr 2⁢𝑝 and Pb 4⁢𝑓 orbitals, rationalizing doublet splitting of the associated spectral lines. Nearly identical nominal cationic valence states of C⁢r 4+ and P⁢b 2+ are identified for this oxide system, hence calling into question the validity of recently proposed charge disproportionation mechanisms. In addition, P⁢b 0.85 ⁢Cr⁢O 3 exhibits an anomalously higher Néel temperature of ∼240 K than that of PbCr⁢O 3 (i.e., ∼200 K), likely due to the deficiency-induced enhancements of Cr3𝑑–O⁢2⁢𝑝 orbital overlap and magnetic exchange. In conclusion, these findings provide much solid evidence to look into the fundamental properties of this important material system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Medium-resolution studies of extreme ultraviolet emission from N2 by electron impact - Vibrational perturbations and cross sections of the c4-prime 1Sigma(+)u and b-prime 1Sigma(+)u states

In a crossed-beam experiment the electron-impact-induced fluorescence spectrum of N2 in the extreme ultraviolet is studied at a spectral resolution of up to 0.03 nm. The optically thin experiment obtained the highest-resolution electron-impact emission spectrum of the Rydberg and valence states of N2. The spectral measurements provide the emission cross sections of each of the vibrational transitions of the Carroll-Yoshino and the Birge-Hopfield-II band systems. Laboratory vibrational-excitation cross sections arising from the mutual perturbation of the c4-prime 1Sigma(+)u and b-prime 1Sigma(+)u states by homogeneous configuration interactions are measured from 10 to 400 eV, and a modified Born approximation analytic model is given for them. The analysis leads to accurate band-system oscillator strengths. The relative emission and excitation cross sections each of the vibrational levels are compared. In addition, low-resolution measurements of the cross section of the atomic dissociation fragments (NI, NII, NIII) from 40 to 102 nm are made, and medium-resolution measurements are made of the emission cross section of the c4 1Pi(u), c5-prime 1Sigma(+)u, c5 1Pi(u), and c6-prime 1Sigma(+)u to X 1Sigma(+)g (0,0) transitions.

Ajello, Joseph M.↗

Tunable Orbital Ferromagnetism at Noninteger Filling of a Moiré Superlattice

Here, the flat bands resulting from moiré superlattices exhibit fascinating correlated electron phenomena such as correlated insulators, ( Nature 2018, 556 (7699), 80–84), ( Nature Physics 2019, 15 (3), 237) superconductivity, ( Nature 2018, 556 (7699), 43–50), ( Nature 2019, 572 (7768), 215–219) and orbital magnetism. ( Science 2019, 365 (6453), 605–608), ( Nature 2020, 579 (7797), 56–61), ( Science 2020, 367 (6480), 900–903) Such magnetism has been observed only at particular integer multiples of n 0 , the density corresponding to one electron per moiré superlattice unit cell. Here, we report the experimental observation of ferromagnetism at noninteger filling (NIF) of a flat Chern band in a ABC-TLG/hBN moiré superlattice. This state exhibits prominent ferromagnetic hysteresis behavior with large anomalous Hall resistivity in a broad region of densities centered in the valence miniband at n = -2.3n 0 . We observe that, not only the magnitude of the anomalous Hall signal, but also the sign of the hysteretic ferromagnetic response can be modulated by tuning the carrier density and displacement field. Rotating the sample in a fixed magnetic field demonstrates that the ferromagnetism is highly anisotropic and likely purely orbital in character.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Pb-Apatite Framework as a Generator of Novel Flat-Band CuO-Based Physics

Based upon density functional theory (DFT) calculations, we present the basic electronic structure of CuPb 9 (PO 4 ) 6 O (Cu-doped lead apatite, aka LK-99), in two scenarios: (1) where the structure is constrained to the P3 symmetry and (2) where no symmetry is imposed. At the DFT level, the former is predicted to be metallic while the latter is found to be a charge-transfer insulator. In both cases the filling of these states is nominally d 9 , consistent with the standard Cu 2+ valence state, and Cu with a local magnetic moment of order 0.7 μ B . In the metallic case we find these states to be unusually flat (∼0.2 eV dispersion), giving a very high density of electronic states (DOS) at the Fermi level that we argue can be a host for novel electronic physics. The flatness of the bands is the likely origin of symmetry-lowering gapping possibilities that would remove the spectral weight from E F . Motivated by some initial experimental observations of metallic or semiconducting behavior, we propose that disorder (likely structural) is responsible for closing the gap. Here, we consider a variety of possibilities that could possibly close the charge-transfer gap but limit consideration to kinds of disorder that preserve electron count. Of the possible kinds we considered (spin disorder, O populating vacancy sites, and Cu on less energetically favorable Pb sites), the local Cu moment, and consequently the charge-transfer gap, remains robust. We conclude that disorder responsible for metallic behavior entails some kind of doping where the electron count changes. Further, we claim that the emergence of the flat bands should be due to weak wave function overlap between the orbitals on Cu and O sites, owing to the directional character of the constituent orbitals. Therefore, finding an appropriate host structure for minimizing hybridization between Cu and O while allowing them to still weakly interact should be a promising route for generating flat bands at E F which can lead to interesting electronic phenomena, regardless of whether LK-99 is a superconductor.

36 MATERIALS SCIENCE↗

Nonlinear deformation and elasticity of BCC refractory metals and alloys

Application of isotropic pressure or uniaxial strain alters the elastic properties of materials; sufficiently large strains can drive structural transformations. Linear elasticity describes stability against infinitesimal strains, while nonlinear elasticity describes the response to finite deformations. Here, it was previously shown that uniaxial strain along [100] drives refractory metals and alloys towards mechanical instabilities. These include an extensional instability, and a symmetry-breaking orthorhombic distortion caused by a Jahn-Teller-Peierls instability that splays the cubic lattice vectors. Here we analyze these transitions in depth. Eigenvalues and eigenvectors of the Wallace tensor identify and classify linear instabilities in the presence of strain. We show that both instabilities are discontinuous, leading to discrete jumps in the lattice parameters. We provide physical intuition for the instabilities by analyzing the changes in first-principles energy, stress, bond lengths, and angles upon application of strain. Electronic band structure calculations show differential occupation of bonding and antibonding orbitals, driven by the changing bond lengths and leading to the structural transformations. Strain thresholds for these instabilities depend on the valence electron count.

36 MATERIALS SCIENCE↗

Er-doped anatase TiO 2 thin films on LaAlO 3 (001) for quantum interconnects (QuICs)

Rare-earth ions (REIs) doped into solid-state crystal hosts offer an attractive platform for realizing quantum interconnects that can function as quantum memories and quantum repeaters. The 4f valence electrons of REIs are shielded by 5s and 5p electrons and undergo highly coherent transitions even when embedded in host crystals. In particular, Er 3+ has an optical transition in the telecom band that is suitable for low-loss communication. Recently, REIs in thin film systems have gained interest due to potential advantages in providing a flexible host crystal environment, enabling scalable on-chip integration with other quantum devices. Here, we investigate the structural and optical properties of Er-doped anatase TiO 2 thin films on LaAlO 3 (001) substrates. By choosing a system with minimal lattice mismatch and adjusting Er-dopant concentration, we achieve optical inhomogeneous linewidths of 5 GHz at 4.5 K. Furthermore, we show that 9 nm-thick buffer and capping layers can reduce the linewidth by more than 40%, suggesting a pathway to further narrowing linewidths in this system. We also identify that Er 3+ ions mainly incorporate into substitutional Ti 4+ sites with non-polar D 2d symmetry, which makes Er dopants insensitive to the first order to local electric fields from impurities and is desirable for coherence properties of Er 3+ spins.

42 ENGINEERING↗

Measuring Photoexcited Electron and Hole Dynamics in ZnTe and Modeling Excited State Core-Valence Effects in Transient Extreme Ultraviolet Reflection Spectroscopy

Transient extreme ultraviolet (XUV) spectroscopy is becoming a valuable tool for characterizing solar energy materials because it can separate photoexcited electron and hole dynamics with element specificity. We use surface-sensitive femtosecond XUV reflection spectroscopy to separately measure photoexcited electron, hole, and band gap dynamics of ZnTe, a promising photocathode for CO 2 reduction. We develop an ab initio theoretical framework based on density functional theory and the Bethe-Salpeter equation to robustly assign the complex transient XUV spectra to the material's electronic states. Applying this framework, we identify the relaxation pathways and quantify their time scales in photoexcited ZnTe, including subpicosecond hot electron and hole thermalization, surface carrier diffusion, ultrafast band gap renormalization, and evidence of acoustic phonon oscillations.

14 SOLAR ENERGY↗

Valence instability and collapse of ferromagnetism in EuB 6 at high pressures

Despite the simplicity of their cubic crystal lattice, rare-earth hexaborides display complex physical properties including a (long debated) onset of metallization via magnetic polaron formation at T c1 approximate to 15 K preceding ferromagnetic ordering at T c2 approximate to 12 K. Here, in this work, we used applied pressure to tune the interplay between electronic structure and magnetism in EuB6. We probed the magnetism, valence, and structure of EuB 6 under quasi-hydrostatic pressures up to 30 GPa using X-ray techniques. Our findings show evidence for collapse of ferromagnetism above 20 GPa following a monotonic increase of mean Eu valence. While X-ray diffraction measurements in the paramagnetic state at room temperature show that the lattice retains cubic symmetry, a measurable quadrupole interaction seen by time-domain synchrotron Mössbauer spectroscopy suggests a lowering of symmetry associated with magnetic ordering, becoming more prominent across the magnetic transition. The interplay between conduction band electron count and magnetism observed under applied pressure in EuB 6 opens possibilities for fine-tuning metallization and magnetic properties of similar Eu-based semi-metal systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Evolution of Bonding and Magnetism via Changes in Valence Electron Count in CuFe 2– x Co x Ge 2

A series of solid solutions, CuFe 2–x Co x Ge 2 (x = 0, 0.2, 0.4, 0.8, and 1.0), have been synthesized by arc-melting and characterized by powder X-ray and neutron diffraction, magnetic measurements, Mössbauer spectroscopy, and electronic band structure calculations. All compounds crystallize in the CuFe 2 Ge 2 structure type, which can be considered as a three-dimensional framework built of fused MGe6 octahedra and MGe 5 trigonal bipyramids (M = Fe and Co), with channels filled by rows of Cu atoms. As the Co content (x) increases, the unit cell volume decreases in an anisotropic fashion: the b and c lattice parameters decrease while the a parameter increases. The changes in all the parameters are nearly linear, thus following Vegard’s law. CuFe 2 Ge 2 exhibits two successive antiferromagnetic (AFM) orderings, corresponding to the formation of a commensurate AFM structure, followed by an incommensurate AFM structure observed at lower temperatures. Additionally, as the Co content increases, the AFM ordering temperature (TN) gradually decreases, and only one AFM transition is observed for x ≥ 0.2. The magnetic behavior of unsubstituted CuFe 2 Ge 2 was found to be sensitive to the preparation method. The temperature-dependent zero-field 57 Fe Mössbauer spectra reveal two hyperfine split components that evolve in agreement with the two consecutive AFM orderings observed in magnetic measurements. In contrast, the field-dependent spectra obtained for fields ≥ 2 T reveal a parallel arrangement of the moments associated with the two crystallographically unique metal sites. Electronic band structure calculations and chemical bonding analysis reveal a mix of strong M–M antibonding and non-bonding states at the Fermi level, in support of the overall AFM ordering observed in zero field. The substitution of Co for Fe reduces the population of the M–M antibonding states and the overall density of states at the Fermi level, thus suppressing the T N value.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Hole-Trapping-Induced Stabilization of Ni 4+ in SrNiO 3 /LaFeO 3 Superlattices

Creating new functionality in materials containing transition metals is predicated on our ability to control the associated charge states. For a given metal, forming lower oxidation states is typically easier than generating higher values, and there is an upper limit on valence that is not exceeded under normal conditions. Here we demonstrate that we can exceed the normal upper limit of 3+ for Ni and Fe via synthesis of (SrNiO 3 )m/(LaFeO 3 )n superlattices by tuning n and m. The Goldschmidt tolerance constraints are lifted and SrNi 4+ O 3 with holes on adjacent O anions can be stabilized as a perovskite at the single unit cell level (m = 1). Spectroscopy reveals that the n = 1 superlattice contains Ni 3+ and Fe 4+ , whereas Ni 4+ and Fe 3+ are observed in the n = 5 superlattice. Here, our results show that the B-site cation valences can be tuned by controlling the magnitude of the FeO6 octahedral rotations which in turn drive the energy balance between Ni 3+ /Fe 4+ and Ni 4+ /Fe 3+ , thus controlling emergent electrical properties such as the band alignment and resulting hole confinement. We suggest that this approach may be generally useful for synthesizing novel, metastable layered structures with new functionalities.

36 MATERIALS SCIENCE↗

How Does Metal Spin State Affect Electronic Communication in Mixed-Valence Dimers? Insights from Ultrafast Near-Infrared and Soft X-ray Transient Absorption Spectroscopy

Recent advancements in photocatalysis, photovoltaics, and quantum information science take advantage of electron spin, and determining how spin multiplicity affects electron transfer is key to understanding these phenomena. Here, in this study, we examine how metal spin state affects electronic communication in an organometallic mixed-valence dimer, ferrocenyl cobaltocenium ([Fe II Cp 2 Co III Cp 2 ] + ). This complex can be photoexcited from its low-spin singlet Fe II ground state to form intermediate-spin triplet Fe II and high-spin quintet Fe II excited states. Using femtosecond optical transient absorption (OTA) spectroscopy with visible (vis), near-infrared (NIR), and short-wave IR (SWIR) probes, supported by time-dependent density functional theory (TD-DFT) calculations, we measure Fe II Co III →Fe III Co II intervalence charge transfer (IVCT) bands in each of the Fe II spin states. Mulliken–Hush analysis of the excited-state IVCT bands was used to compute the electronic coupling between the metal centers in all three spin states, which increased as quintet < triplet < singlet. Meanwhile, the peak energy of the bands, and thus the ΔG of the IVCT transition, increased as triplet < quintet < singlet. Then, to directly probe the electronic structure at each metal center, we employed picosecond soft X-ray transient absorption (XTA) spectroscopy at the Fe and Co L 3 edges. Our results show that the low-spin and high-spin states of [Fe II Cp 2 Co III Cp 2 ] + are valence-localized, while the intermediate-spin state is partially delocalized. The differences in charge delocalization are attributed to differences in orbital occupation and geometry that affect the free energy and superexchange coupling.

Burke, John H. [Univ. of Illinois at Urbana-Champa↗

An Ab Initio Study of the Low-Lying Doublet States of AgO and AgS

Spectroscopic constants (D(sub o), r(sub e), mu(sub e), T(sub e)) are determined for the doublet states of AgO and AgS below approx. = 30000/cm. Large valence basis sets are employed in conjunction with relativistic effective core potentials (RECPs). Electron correlation is included using the modified coupled-pair functional (MCPF) and multireference configuration interaction (MRCI) methods. The A(sup 2)Sigma(sup +) - X(sup 2)Pi band system is found to occur in the near infrared (approx. = 9000/cm) and to be relatively weak with a radiative lifetime of 900 microns for A(sup 2)Sigma(sup +) (upsilon = 0). The weakly bound C(sup 2)Pi state (our notation), the upper state of the blue system, is found to require high levels of theoretical treatment to determine a quantitatively accurate potential. The red system is assigned as a transition from the C(sup 2)Pi state to the previously unobserved A(sup 2)Sigma(sup +) state. Several additional transitions are identified that should be detectable experimentally. A more limited study is performed for the vertical excitation spectrum of AgS. In addition, a detailed all-electron study of the X(sup 2)Pi and A(sup 2)Sigma(sup +) states of AgO is carried out using large atomic natural orbital (ANO) basis sets. Our best calculated D(sub o) value for AgO is significantly less than the experimental value, which suggests that there may be some systematic error in the experimental determination.

Bauschlicher, Charles W., Jr.↗

Strong enhancement of magnetic ordering temperature and structural/valence transitions in EuPd 3 S 4 under high pressure

We present a comprehensive study of the inhomogeneous mixed-valence compound, EuPd 3 S 4 , by electrical transport, X-ray diffraction, time-domain 151 Eu synchrotron Mössbauer spectroscopy, and X-ray absorption spectroscopy measurements under high pressure. Electrical transport measurements show that the antiferromagnetic ordering temperature, T N , increases rapidly from 2.8 K at ambient pressure to 23.5 K at ~19 GPa and plateaus between ~19 and ~29 GPa after which no anomaly associated with T N is detected. A pressure-induced first-order structural transition from cubic to tetragonal is observed, with a rather broad coexistence region (~20 GPa to ~30 GPa) that corresponds to the T N plateau. Mössbauer spectroscopy measurements show a clear valence transition from approximately 50:50 Eu 2+ :Eu 3+ to fully Eu 3+ at ~28 GPa, consistent with the vanishing of the magnetic order at the same pressure. X-ray absorption data show a transition to a fully trivalent state at a similar pressure. Our results show that pressure first greatly enhances T N , most likely via enhanced hybridization between the Eu 4 f states and the conduction band, and then, second, causes a structural phase transition that coincides with the conversion of the europium to a fully trivalent state.

36 MATERIALS SCIENCE↗