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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Viscoelastic properties of elastomeric materials for O-ring applications

Redesign of the Space Shuttle Solid Rocket Booster necessitated re-evaluation of the material used in the field joint O-ring seals. This research project was established to determine the viscoelastic characteristics of five candidate materials. The five materials are: two fluorocarbon compounds, two nitrile compounds, and a silicon compound. The materials were tested in a uniaxial compression test to determine the characteristic relaxation functions. These tests were performed at five different temperatures. A master material curve was developed for each material from the experimental data. The results of this study are compared to tensile relaxation tests. Application of these results to the design analysis is discussed in detail.

Bower, Mark V.↗
NASA NTRS2019

Molecular Dynamics Simulations of Silicon Carbide, Boron Nitride and Silicon for Ceramic Matrix Composite Applications

A comprehensive computational molecular dynamics study is presented for crystalline α-SiC (6H, 4H, and 2H SiC), β-SiC (3C SiC), layered boron nitride, amorphous boron nitride and silicon, the constituent materials for high-temperature SiC/SiC compositions. Large-scale Atomic/Molecular Parallel Simulator software package was used. The Tersoff Potential force field was utilized to evaluate their mechanical characteristics of most of the materials, and the Reax force field was used to model silicon when the Tersoff Potential did not provide accurate results. Their mechanical behaviors were evaluated at a strain rate of 10(exp 7)/s and the results agree with the experimental data in the literature. The results are foundational for linking constituent behavior to composite performance, particularly when test data is unavailable or suspect.

Aluko, Olanrewaju↗
DOE OSTI2023

Neuromorphic Photonics Based on Phase Change Materials

Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge 2 Sb 2 Te 5 ), GeTe-Sb 2 Te 3 , GSST (Ge 2 Sb 2 Se 4 Te 1 ), Sb 2 S 3 /Sb 2 Se 3 , Sc 0.2 Sb 2 Te 3 (SST), and In 2 Se 3 , highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.

36 MATERIALS SCIENCE↗
NASA NTRS2005

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

Hepp, Aloysius F.↗
NASA NTRS1988

Friction and Wear of Monolithic and Fiber Reinforced Silicon-Ceramics Sliding Against IN-718 Alloy at 25 to 800 C in Atmospheric Air at Ambient Pressure

The friction and wear of monolithic and fiber reinforced Si-ceramics sliding against the nickel base alloy IN-718 at 25 to 800 C was measured. The monolithic materials tested were silicon carbide (SiC), fused silica (SiO2), syalon, silicon nitride (Si3N4) with W and Mg additives, and Si3N4 with Y2O3 additive. At 25 C fused silica had the lowest friction while Si3N4 (W,Mg type) had the lowest wear. At 800 C syalon had the lowest friction while Si3N4 (W,Mg type) and syalon had the lowest wear. The SiC/IN-718 couple had the lowest total wear at 25 C. At 800 C the fused silica/IN-718 couple exhibited the least total wear. SiC fiber reinforced reaction bonded silicon nitride (RBSN) composite material with a porosity of 32 percent and a fiber content of 23 vol percent had a lower coefficient of friction and wear when sliding parallel to the fiber direction than in the perpendicular at 25 C. The coefficient of friction for the carbon fiber reinforced borosilicate composite was 0.18 at 25 C. This is the lowest of all the couples tested. Wear of this material was about two decades smaller than that of the monolithic fused silica. This illustrates the large improvement in tribological properties which can be achieved in ceramic materials by fiber reinforcement. At higher temperatures the oxidation products formed on the IN-718 alloy are transferred to the ceramic by sliding action and forms a thin, solid lubricant layer which decreases friction and wear for both the monolithic and fiber reinforced composites.

Deadmore, Daniel L.↗
NASA NTRS1979

Development and evaluation of die and container materials

X = 0.75 Beta prime Sialon (a silicon aluminum oxynitride) and Sibeon (silicon beryllium oxynitride) are promising die materials. In sessile drop tests in contact with molten silicon, beryllium contamination was less than ppm and aluminum contamination 50 ppm. A shaping die of the Sialon material was successfully fabricated. Dry milling studies for the preparation of Si3N4-Al2O3-ALN mixtures were performed with butanol, acetic anhydride, oleic acid, and triethanolamine milling aids. Optimum mixing was achieved with 0.15 percent triethanolamine using a milling time of 8 hours. Preliminary evaluation of Sibeon materials indicates that they are more resistent to molten silicon attack than Sialon. Silicon contamination from the beryllium was less than aluminum contamination even though the aluminum impurity level in the Sibeon was only 450 to 1300 ppm. Work designed to produce an aluminum-free Sibeon is described.

Wills, R. R.↗
NASA NTRS1972

Improved oxidation-resistant carbon and graphite materials

A variety of silicon-carbide treated carbon and graphite products were prepared, and oxidation and strength properties determined. Carbon and graphite materials used in the preliminary study include fiber, tape, felt, foam, bulk, and laminar configurations. The silicon-carbide treatment used in preparing the oxidation resistant specimens employs either vacuum or ultrasonic impregnation of various silicone-silicon mixtures into the matrix material. The impregnation phase is followed by controlled thermal reaction at which time the silicon carbide is synthesized and takes the form of an integral protective boundary layer. Thickness of the layer ranges from a fraction of a mil to 10 mils, depending on the matrix material and processing parameters. Oxidation resistance of all the silicon-carbide-treated specimens investigated was found to be significantly improved. Mechanical strengths of the laminar composites were also found to be somewhat improved. At room temperature the specific strength of the silicon-carbide treated fibers and tapes was degraded to some extent; however, their relative strengths were significantly increased at elevated temperatures in oxidizing atmosphere.

Muir, H. M.↗
DOE OSTI2021

Kinetics of solid–liquid interface motion in molecular dynamics and phase-field models: crystallization of chromium and silicon

The results of molecular dynamics (MD) simulations of the crystallization process in one-component materials and solid solution alloys reveal a complex temperature dependence of the velocity of the crystal–liquid interface featuring an increase up to a maximum at 10–30% undercooling below the equilibrium melting temperature followed by a gradual decrease of the velocity at deeper levels of undercooling. At the qualitative level, such non-monotonous behaviour of the crystallization front velocity is consistent with the diffusion-controlled crystallization process described by the Wilson–Frenkel model, where the almost linear increase of the interface velocity in the vicinity of melting temperature is defined by the growth of the thermodynamic driving force for the phase transformation, while the decrease in atomic mobility with further increase of the undercooling drives the velocity through the maximum and into a gradual decrease at lower temperatures. At the quantitative level, however, the diffusional model fails to describe the results of MD simulations in the whole range of temperatures with a single set of parameters for some of the model materials. The limited ability of the existing theoretical models to adequately describe the MD results is illustrated in the present work for two materials, chromium and silicon. It is also demonstrated that the MD results can be well described by the solution following from the hodograph equation, previously found from the kinetic phase-field model (kinetic PFM) in the sharp interface limit. The ability of the hodograph equation to describe the predictions of MD simulation in the whole range of temperatures is related to the introduction of slow (phase field) and fast (gradient flow) variables into the original kinetic PFM from which the hodograph equation is obtained. The slow phase-field variable is responsible for the description of data at small undercoolings and the fast gradient flow variable accounts for local non-equilibrium effects at high undercoolings. The introduction of these two types of variables makes the solution of the hodograph equation sufficiently flexible for a reliable description of all nonlinearities of the kinetic curves predicted in MD simulations of Cr and Si. This article is part of the theme issue ‘Transport phenomena in complex systems (part 1)’.

Science & Technology - Other Topics↗
NASA NTRS1986

High-efficiency silicon solar cells - Development, current issues and future directions

This paper provides a review of material, process, and design considerations that are essential for achieving high-efficiency silicon solar cells. It describes an approach that resulted in 18.0-18.5-percent-efficient cells on low-resistivity float-zone silicon material. It is shown experimentally that a combination of surface passivation and double-layer antireflection coating can provide 2-3 percent (absolute) improvement in cell efficiency provided the material, process and cell design are carefully selected.

Rohatgi, A.↗
DOE OSTI2020

A native oxide high-κ gate dielectric for two-dimensional electronics

Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III–V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO 2 ) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi 2 SeO 5 ) can be conformally formed via layer-by-layer oxidization of an underlying high-mobility two-dimensional semiconductor, Bi 2 O 2 Se. Using this native oxide dielectric, high-performance Bi 2 O 2 Se field-effect transistors can be created, as well as inverter circuits that exhibit a large voltage gain (as high as 150). The high dielectric constant (~21) of Bi 2 SeO 5 allows its equivalent oxide thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO 2 . The Bi 2 SeO 5 can also be selectively etched away by a wet chemical method that leaves the mobility of the underlying Bi 2 O 2 Se semiconductor almost unchanged.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1979

Solar silicon via the Dow Corning process

Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

Hunt, L. P.↗
DOE OSTI2021

Probing the Reactivity of the Active Material of a Li-Ion Silicon Anode with Common Battery Solvents

Calculations and modeling have shown that replacing the traditional graphite anode with silicon can greatly improve the energy density of lithium-ion batteries. However, the large volume change of silicon particles and high reactivity of lithiated silicon when in contact with the electrolyte lead to rapid capacity fading during charging/discharging processes. In this report, we use specific lithium silicides (LS) as model compounds to systematically study the reaction between lithiated Si and different electrolyte solvents, which provides a powerful platform to deconvolute and evaluate the degradation of various organic solvents in contact with the active lithiated Si-electrode surface after lithiation. Nuclear Magnetic Resonance (NMR) characterization results show that a cyclic carbonate such as ethylene carbonate is chemically less stable than a linear carbonate such as ethylmethyl carbonate, fluoroethylene carbonate, and triglyme as they are found to be more stable when mixed with LS model compounds. Furthermore, guided by the experimental results, two ethylene carbonate (EC)-free electrolytes are studied, and the electrochemical results show improvements with graphite-free Si electrodes relative to the traditional ethylene-carbonate-based electrolytes. More importantly, the study contributes to our understanding of the significant fundamental chemical and electrochemical stability differences between silicon and traditional graphite lithium-ion battery (LIB) anodes and suggests a focused development of electrolytes with specific chemical stability vs lithiated silicon which can passivate the surface more effectively.

25 ENERGY STORAGE↗
NASA NTRS1978

Conductivity of materials made of aluminum nitride and silicon nitride mixtures

To establish the possible mechanism for conductivity in aluminum nitride a study was made of the electric conductivity of pure AlN and its mixtures with silicon nitride at different temperatures and partial pressures of nitrogen in the gas phase. The thermoelectromotive force was also measured. The experiments used polycrystalline samples of cylindrical shape 18 mm in diameter made of powders by hot pressing in graphite press molds at a temperature of 1973-2273 K and pressure 1,470,000 n/sqm. The items obtained by this method had porosity not over 5%. After pressing, the samples were machined to remove carbon from the surface, and were annealed in a stream of dry ammonia for 10 h at a temperature of 1273-1373 K. Electric conductivity was measured according to the bridge scheme on an alternating current of frequency 10 kHz. In order to guarantee close contact of the platinum electrodes with the surface of the samples, a thin layer of platinum was sprayed on them. Experiments were conducted in the temperature interval 1273-1573 K with a half hour delay at each assigned temperature with heating and cooling.

Gorbatov, A. G.↗
NASA NTRS1978

High-temperature ceramics for automobile gas turbines

The employment of the high operational temperatures makes it necessary to use, for the construction of the turbines, ceramic materials such as silicon nitride or silicon carbide. Investigations concerning the development of turbine components made of such materials are conducted by a German automobile manufacturer and the ceramics industry. The current status of these investigations is reviewed. Flame tubes and guide-vane rings have successfully passed tests lasting 20 hours. Prototype turbine wheels have withstood the effects of peripheral speeds of 450 m/s. They also showed resistance to thermal shocks which were as high as 6-0 K/s.

Walzer, P.↗
NASA NTRS1976

Economic analysis of low cost silicon sheet produced from Czochralski grown material

This study shows that the lower limits for manufacturing add-on costs to convert polysilicon to wafers is in the range of $22 to $26/sq m with the cost about equally divided between the crystal growth and wafering processes. However, the $22 to $26/sq m cost limit should be viewed as an asymptote since it is based on multicharge or continuous growth configurations, solidification rates in excess of 2 Kg/hr, multiblade wafering and a slice plus kerf of .045 cm. It should also be emphasized that the results of this study are based on as-sawn wafers, 100% yields (growth and slicing) and no profit. To the first approximation, the limiting cost factors are crucible material and furnace parts for growth and blade material and slurry for slicing.

Koliwad, K. M.↗
NASA NTRS1985

Materials requirements for high-efficiency silicon solar cells

To achieve higher Si solar cell efficiencies (greater than 20%), better single-crystal Si must be produced. It is believed possible to bring Cz (Czochralski) Si up to the same low recombination level as FZ (Float Zone) Si. It is also desirable that solar cell Si meet the following requirements: long minority carrier lifetime (0.2 ohm-cm p-type with tau less than 500 microsec); repeatedly uniform lifetime (not spread from 50 to 1000 microsec); a lifetime that does not decrease during normal device processing; a silicon wafer sheet that is flat and stays throughout normal device processing; uniform and reasonable mechanical strength; and, manufacture at low cost (less than $50/sq m).

Wolf, M.↗
NASA NTRS1988

Fiber reinforced ceramic material

A strong and tough SiC/RBSN composite material is comprised of silicon fibers and a reaction bonded silicon nitride (RBSN) matrix. This composite material may be used at elevated temperatures up to at least 1400 C.

Ramakrishna T Bhatt↗