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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Proceedings of the 22nd Project Integration Meeting

This report describes progress made by the Flat-Plate Solar Array Project during the period January to September 1983. It includes reports on silicon sheet growth and characterization, module technology, silicon material, cell processing and high-efficiency cells, environmental isolation, engineering sciences, module performance and failure analysis and project analysis and integration. It includes a report on, and copies of visual presentations made at the 22nd Project Integration Meeting held at Pasadena, California, on September 28 and 29, 1983.

Source record↗
NASA NTRS1989

Microtronic Flow Transducer

Novel microelectronic airflow and gas-flow transducer developed. Has no moving parts and constructed by use of variation on ordinary technology for processing of planar silicon microelectronics, where hundreds or thousands of identical devices concurrently produced on single chip as easily as can one. Gas-flow transducer based upon integrated Wheatstone bridge in silicon chip. Legs doped with gold and isolated thermally by etching away surrounding material (except corners). Because of small size, sensitivity, and good directional capability of new transducer, numerous potential applications in measurement of vortexes, flows in inlets to pipes, and other complicated flows.

Sundberg, Gale R.↗
NASA NTRS1989

Radiation damage in scientific charge-coupled devices

Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.

Janesick, James↗
NASA NTRS1993

Fuzzy sets predict flexural strength and density of silicon nitride ceramics

In this work, we utilize fuzzy sets theory to evaluate and make predictions of flexural strength and density of NASA 6Y silicon nitride ceramic. Processing variables of milling time, sintering time, and sintering nitrogen pressure are used as an input to the fuzzy system. Flexural strength and density are the output parameters of the system. Data from 273 Si3N4 modulus of rupture bars tested at room temperature and 135 bars tested at 1370 C are used in this study. Generalized mean operator and Hamming distance are utilized to build the fuzzy predictive model. The maximum test error for density does not exceed 3.3 percent, and for flexural strength 7.1 percent, as compared with the errors of 1.72 percent and 11.34 percent obtained by using neural networks, respectively. These results demonstrate that fuzzy sets theory can be incorporated into the process of designing materials, such as ceramics, especially for assessing more complex relationships between the processing variables and parameters, like strength, which are governed by randomness of manufacturing processes.

Cios, Krzysztof J.↗
NASA NTRS1993

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Huber, Daniel A.↗
NASA NTRS1995

Diamond thin film temperature and heat-flux sensors

Diamond film temperature and heat-flux sensors are developed using a technology compatible with silicon integrated circuit processing. The technology involves diamond nucleation, patterning, doping, and metallization. Multi-sensor test chips were designed and fabricated to study the thermistor behavior. The minimum feature size (device width) for 1st and 2nd generation chips are 160 and 5 micron, respectively. The p-type diamond thermistors on the 1st generation test chip show temperature and response time ranges of 80-1270 K and 0.29-25 microseconds, respectively. An array of diamond thermistors, acting as heat flux sensors, was successfully fabricated on an oxidized Si rod with a diameter of 1 cm. Some problems were encountered in the patterning of the Pt/Ti ohmic contacts on the rod, due mainly to the surface roughness of the diamond film. The use of thermistors with a minimum width of 5 micron (to improve the spatial resolution of measurement) resulted in lithographic problems related to surface roughness of diamond films. We improved the mean surface roughness from 124 nm to 30 nm by using an ultra high nucleation density of 10(exp 11)/sq cm. To deposit thermistors with such small dimensions on a curved surface, a new 3-D diamond patterning technique is currently under development. This involves writing a diamond seed pattern directly on the curved surface by a computer-controlled nozzle.

Aslam, M.↗
NASA NTRS1995

Pyroelectric Applications of the VDF-TrFE Copolymer

VDF/TrFe pyroelectric sensors have now definitely reached the level of a product. Based on a bidimensional staring array, it can be considered as a whole system with a monolithic technology processed on a silicon substrate provided with the integrated read out circuit. The paper will describe the main procedure dealing with the elaboration of a 32 x 32 focal plane array developed, in the context of the PROMETHEUS PROCHIP European Program (EUREKA), as a passive infrared obstacle detection applied to automotive. Additional experimental data suggest that this microsystem could operate in space environment.

Simonne, J. J.↗
NASA NTRS2005

Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.

Li, Jing↗
NASA NTRS2006

Large format imaging arrays for the Atacama Cosmology Telescope

We describe progress in the fabrication, characterization, and production of detector arrays for the Atacama Cosmology Telescope (ACT). The completed ACT instrument is specified to image simultaneously at 145, 225, and 265 GHz using three 32x32 filled arrays of superconducting transition edge sensors (TES) read out with time-division-multiplexed SQUID amplifiers. We present details of the pixel design and testing including the optimization of the electrical parameters for multiplexed readout. Using geometric noise suppression and careful tuning of operation temperature and device bias resistance, the excess noise in the TES devices is balanced with detector speed for interfacing with the ACT optics. The design also accounts for practical tolerances such as transition temperature gradients and scatter that occur in the production of multiple wafers to populate fully the kilopixel cameras. We have developed an implanted absorber layer compatible with our silicon-on-insulator process that allows for tunable optical resistance with requisite on-wafer uniformity and wafer-to-wafer reproducibility. Arrays of 32 elements have been tested in the laboratory environment including electrical, optical, and multiplexed performance. Given this pixel design, optical tests and modeling are used to predict the performance of the filled array under anticipated viewing conditions. Integration of the filled array of pixels with a tuned backshort and dielectric plate in front of the array maximize absorption and the focal plane and suppress reflections. A mechanical design for the build of the full structure is completed and we report on progress toward the construction of a prototype array for first light on the ACT.

Chervenak, J. A.↗
NASA NTRS2008

Radiation-Insensitive Inverse Majority Gates

To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are inherently much less adversely affected by radiation and extreme temperatures. The proposed development would involve state-of-the-art micromachining and recent advances in the fabrication of carbon-nanotube-based field emitters. A representative three-input inverse majority gate would be a monolithic, integrated structure that would include three gate electrodes, six bundles of carbon nanotubes (serving as electron emitters) at suitable positions between the gate electrodes, and an overhanging anode. The bundles of carbon nanotubes would be grown on degenerately doped silicon substrates that would be parts of the monolithic structure. The gate electrodes would be fabricated as parts of the monolithic structure by means of a double-silicon-on-insulator process developed at NASA's Jet Propulsion Laboratory. The tops of the bundles of carbon nanotubes would lie below the plane of the tops of the gate electrodes. The particular choice of shapes, dimensions, and relative positions of the electrodes and bundles of carbon nanotubes would provide for both field emission of electrons from the bundles of carbon nanotubes and control of the electron current to obtain the inverse majority function, which is described in the paper.

Manohara, Harish↗
NASA NTRS2014

A Fully Non-metallic Gas Turbine Engine Enabled by Additive Manufacturing

The Non-Metallic Gas Turbine Engine project, funded by NASA Aeronautics Research Institute (NARI), represents the first comprehensive evaluation of emerging materials and manufacturing technologies that will enable fully nonmetallic gas turbine engines. This will be achieved by assessing the feasibility of using additive manufacturing technologies for fabricating polymer matrix composite (PMC) and ceramic matrix composite (CMC) gas turbine engine components. The benefits of the proposed effort include: 50 weight reduction compared to metallic parts, reduced manufacturing costs due to less machining and no tooling requirements, reduced part count due to net shape single component fabrication, and rapid design change and production iterations. Two high payoff metallic components have been identified for replacement with PMCs and will be fabricated using fused deposition modeling (FDM) with high temperature capable polymer filaments. The first component is an acoustic panel treatment with a honeycomb structure with an integrated back sheet and perforated front sheet. The second component is a compressor inlet guide vane. The CMC effort, which is starting at a lower technology readiness level, will use a binder jet process to fabricate silicon carbide test coupons and demonstration articles. The polymer and ceramic additive manufacturing efforts will advance from monolithic materials toward silicon carbide and carbon fiber reinforced composites for improved properties. Microstructural analysis and mechanical testing will be conducted on the PMC and CMC materials. System studies will assess the benefits of fully nonmetallic gas turbine engine in terms of fuel burn, emissions, reduction of part count, and cost. The proposed effort will be focused on a small 7000 lbf gas turbine engine. However, the concepts are equally applicable to large gas turbine engines. The proposed effort includes a multidisciplinary, multiorganization NASA - industry team that includes experts in ceramic materials and CMCs, polymers and PMCs, structural engineering, additive manufacturing, engine design and analysis, and system analysis.

manufacturing↗
NASA NTRS2015

A Fully Non-Metallic Gas Turbine Engine Enabled by Additive Manufacturing

The Non-Metallic Gas Turbine Engine project, funded by NASA Aeronautics Research Institute, represents the first comprehensive evaluation of emerging materials and manufacturing technologies that will enable fully nonmetallic gas turbine engines. This will be achieved by assessing the feasibility of using additive manufacturing technologies to fabricate polymer matrix composite and ceramic matrix composite turbine engine components. The benefits include: 50 weight reduction compared to metallic parts, reduced manufacturing costs, reduced part count and rapid design iterations. Two high payoff metallic components have been identified for replacement with PMCs and will be fabricated using fused deposition modeling (FDM) with high temperature polymer filaments. The CMC effort uses a binder jet process to fabricate silicon carbide test coupons and demonstration articles. Microstructural analysis and mechanical testing will be conducted on the PMC and CMC materials. System studies will assess the benefits of fully nonmetallic gas turbine engine in terms of fuel burn, emissions, reduction of part count, and cost. The research project includes a multidisciplinary, multiorganization NASA - industry team that includes experts in ceramic materials and CMCs, polymers and PMCs, structural engineering, additive manufacturing, engine design and analysis, and system analysis.

Ceramics↗
DOE OSTI2022

Efficient black silicon photovoltaic devices with enhanced blue response

A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.

Oh, Jihun↗
NASA NTRS1985

Defects in silicon effect on device performance and relationship to crystal growth conditions

A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

Jastrzebski, L.↗
NASA NTRS1977

Applications of ion implantation for high efficiency silicon solar cells

Ion implantation is utilized for the dopant introduction processes necessary to fabricate a silicon solar cell. Implantation provides a versatile powerful tool for development of high efficiency cells. Advantages and problems of implantation and the present status of developmental use of the technique for solar cells are discussed.

Minnucci, J. A.↗
NASA NTRS1975

Demonstration of the feasibility of automated silicon solar cell fabrication

A study effort was undertaken to determine the process, steps and design requirements of an automated silicon solar cell production facility. Identification of the key process steps was made and a laboratory model was conceptually designed to demonstrate the feasibility of automating the silicon solar cell fabrication process. A detailed laboratory model was designed to demonstrate those functions most critical to the question of solar cell fabrication process automating feasibility. The study and conceptual design have established the technical feasibility of automating the solar cell manufacturing process to produce low cost solar cells with improved performance. Estimates predict an automated process throughput of 21,973 kilograms of silicon a year on a three shift 49-week basis, producing 4,747,000 hexagonal cells (38mm/side), a total of 3,373 kilowatts at an estimated manufacturing cost of $0.866 per cell or $1.22 per watt.

Taylor, W. E.↗
NASA NTRS1986

Flat-plate solar array project. Volume 2: Silicon material

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Lutwack, R.↗