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NASA NTRS1999

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

Zhu, Shen↗

NASA NTRS2000

Methods for forming group III-V arsenide-nitride semiconductor materials

Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Major, Jo S.↗

NASA NTRS2002

Methods for forming group III-arsenide-nitride semiconductor materials

Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Major, Jo S.↗

NASA NTRS2000

III-V arsenide-nitride semiconductor

III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Major, Jo S.↗

NASA NTRS2001

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Powell, J. Anthony↗

NASA NTRS2010

Performance of Planar-Waveguide External Cavity Laser for Precision Measurements

A 1542-nm planar-waveguide external cavity laser (PW-ECL) is shown to have a sufficiently low level of frequency and intensity noise to be suitable for precision measurement applications. The frequency noise and intensity noise of the PW-ECL was comparable or better than the nonplanar ring oscillator (NPRO) and fiber laser between 0.1 mHz to 100 kHz. Controllability of the PW-ECL was demonstrated by stabilizing its frequency to acetylene (13C2H2) at 10(exp -13) level of Allan deviation. The PW-ECL also has the advantage of the compactness of a standard butterfly package, low cost, and a simple design consisting of a semiconductor gain media coupled to a planar-waveguide Bragg reflector. These features would make the PW-ECL suitable for precision measurements, including compact optical frequency standards, space lidar, and space interferometry

Numata, Kenji↗

NASA NTRS2008

Control of the Diameter and Chiral Angle Distributions during Production of Single-wall Carbon Nanotubes

Many applications of single wall carbon nanotubes (SWCNT), especially in microelectronics, will benefit from use of certain (n,m) nanotube types (metallic, small gap semiconductor, etc.). However, as produced SWCNT samples are polydispersed, with many (n,m) types present and typical approximate 1:2 metal/semiconductor ratio. It has been recognized that production of SWCNTs with narrow 'tube type populations' is beneficial for their use in applications, as well as for the subsequent sorting efforts. In the present work, SWCNTs were produced by a pulsed laser vaporization (PLV) technique. The nanotube type populations were studied with respect to the production temperature with two catalyst compositions: Co/Ni and Rh/Pd. The nanotube type populations were measured via photoluminescence, UV-Vis-NIR absorption and Raman spectroscopy. It was found that in the case of Co/Ni catalyst, decreased production temperature leads to smaller average diameter, exceptionally narrow diameter distribution, and strong preference toward (8,7) nanotubes. The other nanotubes present are distributed evenly in the 7-30 deg chiral angle range. In the case of Rh/Pd catalyst, a decrease in the temperature leads to a small decrease in the average diameter, with the chiral angle distribution skewed towards 30 o and a preference toward (7,6), (8,6) and (8,7) nanotubes. However, the diameter distribution remains rather broad. These results demonstrate that PLV production technique can provide at least partial control over the nanotube (n,m) populations. In addition, these results have implications for the understanding the nanotube nucleation mechanism in the laser oven.

Nikolaev, Pavel↗

NASA NTRS1997

III-V aresenide-nitride semiconductor materials and devices

III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Major, Jo S.↗

NASA NTRS1990

32 bit digital optical computer - A hardware update

Such state-of-the-art devices as multielement linear laser diode arrays, multichannel acoustooptic modulators, optical relays, and avalanche photodiode arrays, are presently applied to the implementation of a 32-bit supercomputer's general-purpose optical central processing architecture. Shannon's theorem, Morozov's control operator method (in conjunction with combinatorial arithmetic), and DeMorgan's law have been used to design an architecture whose 100 MHz clock renders it fully competitive with emerging planar-semiconductor technology. Attention is given to the architecture's multichannel Bragg cells, thermal design and RF crosstalk considerations, and the first and second anamorphic relay legs.

Guilfoyle, Peter S.↗

NASA NTRS1986

Photoelectrochemical fabrication of spectroscopic diffraction gratings

Photoelectrochemical etching was demonstrated as a means of fabricating a variety of periodic structures in semiconductors. The semiconductor is used as an electrode in an electrochemical cell, and is in contact with a liquid electrolyte. When the crystal is held at a positive voltage and illuminated, etching occurs in only the illuminated regions to a depth proportional to the illumination intensity and exposure time. In Phase 1, it was determined that diffraction gratings could be produced in gallium arsenide crystals by this method, using either a scanned focused laser beam or by uniform illumination of a ruling mask defined in metal or photoresist on the crystal surface. The latter approach was determined to produce V-grooves if the mask is oriented along certain crystallographic directions. These V-grooves were produced with an exceedingly smooth crystal morphology due to the highly controllable nature of the process and the mild electrolytes involved. The results form the basis for photoelectrochemical fabrication of deep, low pitch Eschelle gratings for use in high orders in NASA spectrographic instrumentation such as the Space Telescope Imaging Spectrograph.

Rauh, R. David↗

NASA NTRS2000

Stereo Imaging Velocimetry of Mixing Driven by Buoyancy Induced Flow Fields

Mixing of two fluids generated by steady and particularly g-jitter acceleration is fundamental towards the understanding of transport phenomena in a microgravity environment. We propose to carry out flight and ground-based experiments to quantify flow fields due to g-jitter type of accelerations using Stereo Imaging Velocimetry (SIV), and measure the concentration field using laser fluorescence. The understanding of the effects of g-jitter on transport phenomena is of great practical interest to the microgravity community and impacts the design of experiments for the Space Shuttle as well as the International Space Station. The aim of our proposed research is to provide quantitative data to the community on the effects of g-jitter on flow fields due to mixing induced by buoyancy forces. The fundamental phenomenon of mixing occurs in a broad range of materials processing encompassing the growth of opto-electronic materials and semiconductors, (by directional freezing and physical vapor transport), to solution and protein crystal growth. In materials processing of these systems, crystal homogeneity, which is affected by the solutal field distribution, is one of the major issues. The understanding of fluid mixing driven by buoyancy forces, besides its importance as a topic in fundamental science, can contribute towards the understanding of how solutal fields behave under various body forces. The body forces of interest are steady acceleration and g-jitter acceleration as in a Space Shuttle environment or the International Space Station. Since control of the body force is important, the flight experiment will be carried out on a tunable microgravity vibration isolation mount, which will permit us to precisely input the desired forcing function to simulate a range of body forces. To that end, we propose to design a flight experiment that can only be carried out under microgravity conditions to fully exploit the effects of various body forces on fluid mixing. Recent flight experiments, by the P.I. through collaboration with the Canadian Space Agency (STS-85, August 1997), aimed at determining the stability of the interface between two miscible liquids inside an enclosure show that a long liquid column (5 cm) under microgravity isolation conditions can be stable, i.e. the interface remains sharp and vertical over a short time scale; thus transport occurs by molecular mass diffusion. On the other hand, when the two liquids were excited from a controlled vibration source (Microgravity Vibration Isolation Mount) two to four mode large amplitude quasi-stationary waves were observed. The data was limited to CCD recording of the dynamics of the interface between the two fluids. We propose to carry out flight experiments to quantify the dynamics of the flow field using Stereo Imaging Velocimetry and measure the concentration field using laser fluorescence. The results will serve as a basis to understand effects of g-jitter on transport phenomena, in this case mass diffusion. As the measurement of the kinematics of the flow field will shed light on the instability mechanism. The research will allow measurement of the flow field in microgravity environment to prove two hypotheses: (1) Maxwell's hypothesis: finite convection always exists in diffusing systems, and (2) Quasi-stationary waves inside a bounded enclosure in a microgravity environment is generated by Kelvin-Helmholtz instability; resonance of the interface which produces incipient mixing is due to Rayleigh-Taylor instability. The first hypothesis can be used as a benchmark experiment to illustrate diffusive mixing. The second hypothesis will lead to the understanding of g-jitter effects on buoyancy driven flow fields which occur in many situations involving materials processing, and other basic fluid physics phenomena. In addition, the second hypothesis will also provide insight in how Rayleigh-Taylor and Kelvin-Helmholtz instabilities propagate concentration fronts during mixing. Measurement of the flow field using SIV is important because it is the flow field which causes instability at the interface between the two fluids. Mixing driven by buoyancy induced flow fields will be addressed both experimentally and computationally. The experimental effort will address the kinematics of mixing: stretching, transport and chaos. Quantification of the mechanisms of mixing will consists of measuring the flow field using the SIV system at Glenn and capturing the dynamics of the interface, to measure mass transport, using a CCD camera. These experiments will be carried out within the framework of Earth's gravity and g-jitter microgravity acceleration as in a Space Shuttle environment or the International Space Station. The g-jitter will be induced and controlled using a tunable vibration isolation platform to isolate against vibration as well as input periodic and random vibration to the system. The parametric range of the microgravity experiment will be extended from the experiments on STS-85 to investigate higher mode quasi-stationary waves (8 to 12), as well as resonance regions which leads to chaos and turbulence. Ground-based experiments will focus on effects of vibration on stably stratified fluid layers in order to scale for possible scenarios in a microgravity environment. These vibrations will be subjected perpendicular to the concentration field on the ground since the parallel case can only be carried out in a microgravity environment. The concept of dynamical similarity will be applied to tune the experiments as closely as possible to a Space Shuttle environment or the International Space Station. The computational effort will take advantage of the Computational Laboratory at Glenn to corroborate the experimental findings with predictions of the dynamics of the flow field using the codes FLUENT (finite difference based) and FIDAP (finite element based). We will investigate two important cases, single-fluid model to address dilute systems with negligible jump in viscosity and the more general two-fluid model which accounts for finite jump in viscosity. Apart from its microgravity relevance, this experiment is well suited to study dynamics in nonlinear systems.

Duval, W. M. B.↗

NASA NTRS1978

The Array Automated Assembly Task for the Low Cost Solar Array Project, Phase 2

During the program a process sequence was proposed and tested for the fabrication of dendritic welb silicon into solar modules. This sequence was analyzed as to yield and cost and these data suggest that the price goals of 1986 are attainable. Specifically, it was shown that a low cost POCL3 is a suitable replacement for the semiconductor grade, and that a suitable CVD oxide can be deposited from a silane/air mixture using a Silox reactor. A dip coating method was developed for depositing an antireflection coating from a metalorganic precursor. Application of photoresist to define contact grids was made cost effective through use of a dip coating technique. Electroplating of both Ag and Cu was shown feasible and cost effective for producing the conductive metal grids on the solar cells. Laser scribing was used to separate the cells from the dendrites without degradation. Ultrasonic welding methods were shown to be feasible for interconnecting the cells. A study of suitable low cost materials for encapsulation suggest that soda lime glass and phenolic filled board are preferred.

Campbell, R. B.↗

NASA NTRS1999

Ultrasound Thermal Field Imaging of Opaque Fluids

We have initiated an experimental program to develop an ultrasound system for non-intrusively imaging the thermal field in opaque fluids under an externally imposed temperature gradient. Many industrial processes involve opaque fluids, such as molten metals, semiconductors, and polymers, often in situations in which thermal gradients are important. For example, one may wish to understand semiconductor crystal growth dynamics in a Bridgman apparatus. Destructive testing of the crystal after the process is completed gives only indirect information about the fluid dynamics of the formation process. Knowledge of the coupled thermal and velocity fields during the growth process is then essential. Most techniques for non-intrusive velocity and temperature measurement in fluids are optical in nature, and hence the fluids studied must be transparent. In some cases (for example, LDV (laser Doppler velocimetry) and PIV (particle imaging velocimetry)) the velocities of small neutrally buoyant seed particles suspended in the fluid, are measured. Without particle seeding one can use the variation of the index of refraction of the fluid with temperature to visualize, through interferometric, Schlieren or shadowgraph techniques, the thermal field. The thermal field in turn gives a picture of the pattern existing in the fluid. If the object of study is opaque, non-optical techniques must be used. In this project we focus on the use of ultrasound, which propagates easily through opaque liquids and solids. To date ultrasound measurements have almost exclusively relied on the detection of sound scattered from density discontinuities inside the opaque material of interest. In most cases it has been used to visualize structural properties, but more recently the ultrasound Doppler velocimeter has become available. As in the optical case, it relies on seed particles that scatter Doppler shifted sound back to the detector. Doppler ultrasound techniques are, however, not useful for studying convective fluid flow in crystal growth, because particle seeding is unacceptable and flow velocities are typically too low to be resolved, and may be even lower in microgravity conditions where buoyancy forces are negligible. We will investigate a different use of ultrasound to probe the flows of opaque fluids non-intrusively and without the use of seed particles: our goal is to ultrasonically visualize the thermal field of opaque fluids with relatively high spatial resolution. The proposed technique relies upon the variation of sound speed with temperature of the fluid. A high frequency ultra-sound pulse passing through a fluid-filled chamber will traverse the chamber in a time determined by the relevant chamber dimension and the temperature of the fluid through which the pulse passes. With high time-resolution instrumentation that compares the excitation signal with the received pulse we can detect the influence of the fluid temperature on the pulse travel time. This is effectively an interferometric system, which in its optical form is an extremely sensitive approach to measuring thermal fields in fluids. Moreover, the temperature dependence of sound velocity in liquid metals is comparable to the temperature dependence of the speed of light required for accurate interferometric thermal images in transparent fluids. With an array of transducers scanned electronically a map of the thermal field over the chamber could be produced. An alternative approach would be to use the ultrasound analog of the shadowgraph technique. In the optical version, collimated light passes through the fluid, where it is focused or defocused locally by temperature field induced variations of the index of refraction. The resulting image reveals the thermal field through the spatial pattern of light intensity variations. By analogy, an ultrasound plane wave traversing an opaque fluid sample would be also locally focused or defocused depending on the speed of sound variations, giving rise to spatial variations in sound intensity that will reveal the thermal field pattern. These approaches could be applied to any situation in which temperature differences are expected to occur, and will rapidly provide information about the flow that simply cannot be obtained by any current intrusive or non-intrusive diagnostic technique. As materials processing in microgravity matures it will become increasingly important to have available simple and versatile diagnostic tools, such as we will develop, for studying the flows of opaque fluids under thermal forcing.

Andereck, C. David↗

NASA NTRS1984

Investigation of the quantum efficiency of optical heterodyne detectors

The frequency response and quantum efficiency of optical photodetectors for heterodyne receivers is investigated. The measurements utilized two spectral lines from the output of two lasers as input to the photodetectors. These lines are easily measurable in power and frequency and hence serve as known inputs. By measuring the output current of the photodetector the quantum efficiency is determined as a function of frequency separation between the two input signals. An investigation of the theoretical basis and accuracy of this type of measurement relative to similar measurements utilizing risetime is undertaken. A theoretical study of the heterodyne process in photodetectors based on semiconductor physics is included so that higher bandwidth detectors may be designed. All measurements are made on commercially available detectors and manufacturers' specifications for normal photodetector operation are compared to the measured heterodyne characteristics.

Batchman, T. E.↗

NASA NTRS1986

Progress in holographic applications; Proceedings of the Meeting, Cannes, France, December 5, 6, 1985

Papers are presented on a holographic recording material containing poly-n-vinylcarbozole, photoelectrochemical etching of holographic gratings in semiconductors, the analysis and construction of powered reflection holographic optical elements, achromatic display holograms in dichromated gelatin, and image blurring in display holograms and in holographic optical elements. Topics discussed include two-dimensional optical beam switching techniques using dynamnic holography, a new holographic interferometer with monomode fibers for integrated optics applications, computer controlled holography, and the copying of holograms using incoherent light. Consideration is given to holography of very far objects, rainbow holography with a multimode laser source, and the use of an endoscope for optical fiber holography.

Ebbeni, Jean↗

NASA NTRS2008

Communication using VCSEL laser array

Ultrafast directional beam switching, using coupled vertical cavity surface emitting lasers (VCSELs) is combined with a light modulator to provide information transfer at bit rates of tens of GHz. This approach is demonstrated to achieve beam switching frequencies of 32-50 GHz in some embodiments and directional beam switching with angular differences of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches. A Mach-Zehnder interferometer, a Fabry-Perot etalon, or a semiconductor-based electro-absorption transmission channel, among others, can be used as a light modulator.

Goorjian, Peter M.↗

NASA NTRS1981

LPE growth of 1.3 micron InGaAsP CW lasers on /110/ InP substrates

A description is presented of the liquid-phase epitaxial (LPE) growth of high-quality InGaAsP/InP continuous-wave (CW) laser structures on (110) InP substrates using conventional LPE without the need for special growth procedures. Double heterojunction laser structures were grown using the LPE supercooling method with a horizontal sliding boat. Low broad-area current densities (970 A/sq cm) and CW operation achieved at room temperature indicate that results comparable to up-to-date devices may be achieved. The inherent tendency for surface planarity maintenance due to the perfect surface stoichiometry of the (110) surface is a feature that may lend itself to the generation of improved interface growth in quaternary III-V and related semiconductor alloy systems. The similar cross-sectional appearance of structures grown on (110) and (100) orientations show that conventional LPE can be used with (110) surface planes without introducing special growth procedures.

Hawrylo, F. Z.↗

NASA NTRS2009

Control of the Diameter and Chiral Angle Distributions during Production of Single-Wall Carbon Nanotubes

Many applications of single wall carbon nanotubes (SWCNT), especially in microelectronics, will benefit from use of certain (n,m) nanotube types (metallic, small gap semiconductor, etc.) Especially fascinating is the possibility of quantum conductors that require metallic armchair nanotubes. However, as produced SWCNT samples are polydisperse, with many (n,m) types present and typical approx.1:2 metal/semiconductor ratio. Nanotube nucleation models predict that armchair nuclei are energetically preferential due to formation of partial triple bonds along the armchair edge. However, nuclei can not reach any meaningful thermal equilibrium in a rapidly expanding and cooling plume of carbon clusters, leading to polydispersity. In the present work, SWCNTs were produced by a pulsed laser vaporization (PLV) technique. The carbon vapor plume cooling rate was either increased by change in the oven temperature (expansion into colder gas), or decreased via "warm-up" with a laser pulse at the moment of nucleation. The effect of oven temperature and "warm-up" on nanotube type population was studied via photoluminescence, UV-Vis-NIR absorption and Raman spectroscopy. It was found that reduced temperatures leads to smaller average diameters, progressively narrower diameter distributions, and some preference toward armchair structures. "Warm-up" shifts nanotube population towards arm-chair structures as well, but the effect is small. Possible improvement of the "warm-up" approach to produce armchair SWCNTs will be discussed. These results demonstrate that PLV production technique can provide at least partial control over the nanotube (n,m) population. In addition, these results have implications for the understanding the nanotube nucleation mechanism in the laser oven.

Nikolaev, Pavel↗