Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature
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X-ray crystallography is one of the leading tools to analyze the 3-D structure, and therefore, function of proteins and other biological macromolecules. Traditional methods of mounting individual crystals for X-ray diffraction analysis can be tedious and result in damage to fragile protein crystals. Furthermore, the advent of multi-crystal and serial crystallography methods explicitly require the mounting of larger numbers of crystals. To address this need, we have developed a device that facilitates the straightforward mounting of protein crystals for diffraction analysis, and that can be easily manufactured at scale. Inspired by grid-style devices that have been reported in the literature, we have developed an X-ray compatible microfluidic device that can be used to trap protein crystals in an array configuration, while also providing excellent optical transparency, a low X-ray background, and compatibility with the robotic sample handling and environmental controls used at synchrotron macromolecular crystallography beamlines. At the Stanford Synchrotron Radiation Lightsource (SSRL), these capabilities allow for fully remote-access data collection at controlled humidity conditions. Furthermore, we have demonstrated continuous manufacturing of these devices via roll-to-roll fabrication to enable cost-effective and efficient large-scale production.
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A device architecture utilizing a single-molecule magnet (SMM) as a device element between two ferromagnetic electrodes may open vast opportunities to create novel molecular spintronics devices.
Average ZT of near unity provides a competitive thermoelectric conversion efficiency of ∼12% at low temperature difference of 400 K.
The local environments of Co and Zn dopants in SnO 2 , a diluted magnetic semiconductor system, are studied using X-ray spectroscopy and crystal field calculations, yielding evidence that the ferromagnetism is mediated by oxygen vacancies.
The number and position of halogen substituents in purely organic π–π* chromophores critically affect the efficiency of phosphorescence.
Formation of the stable solid mercury nanoparticles by acoustic cavitation and their electrochemical activity compared to its bulk liquid metal.
Co 2 SiO 4 is a ceramic pigment and promising battery material of significant technological interest, as well as a model end-member of one of the most important mineral families in the Earth's crust and upper mantle. All previously developed methods for synthesis of Co 2 SiO 4 require high-temperature processing, which promotes grain growth, while the nanocrystalline form is required for some important technological applications. Here, we report a successful method for synthesizing nanocrystalline Co 2 SiO 4 via a simple and inexpensive high-energy ball milling mechanochemical process. Products of the synthesis were characterized by a combination of XRD and TEM, and their crystal structures and elemental compositions are reported.
Microscopic origin of ferromagnetism in Cr-doped ZnTe. Figure shows parallel spins with large magnetic moment in a – c plane on Zn/Cr site. The ordered moment is due to orbital overlap between Te and Zn/Cr sites, highlighted by transparent circles.
Here, we report the synthesis of a novel quaternary Heusler alloy CoMnCrGa and its structural, magnetic, transport and electronic properties using both experimental and theoretical methods.
Monolayer iron oxides grown on metal substrates have widely been used as model systems in heterogeneous catalysis. By means of ambient-pressure scanning tunneling microscopy (AP-STM), we studied the in situ oxidation and reduction of FeO(111) grown on Au(111) by oxygen (O 2 ) and carbon monoxide (CO), respectively. Oxygen dislocation lines present on FeO islands are highly active for O 2 dissociation. X-ray photoelectron spectroscopy measurements distinctly reveal the reversible oxidation and reduction of FeO islands after sequential exposure to O 2 and CO. Here, our AP-STM results show that excess O atoms can be further incorporated on dislocation lines and react with CO, whereas the CO is not strong enough to reduce the FeO supported on Au(111) that is essential to retain the activity of oxygen dislocation lines.
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data have been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the bandgap (1.2 eV–2.8 eV).
Incorporation of Se into Cd 1–x Zn x Te (CZT) to form the quaternary compound semiconductor Cd 1–x Zn x Te 1–y Se y (CZTS) has proven to be an effective solution for compensating the major flaws associated with CZT, including poor homogeneity and high concentrations of electronically active deep levels that limit the performance of CZT detectors. In order to investigate how deep levels are affected by the Se concentration in CZTS, we performed photoinduced current transient spectroscopy (PICTS) measurements on CZTS crystals grown by the traveling heater method (THM) with 10% atomic Zn and varying atomic percentage of Se from 1.5% to 7.0%. The PICTS scans for up to 4% Se showed an exponential reduction in the capture cross section of deep levels associated with Te secondary phases in conjunction with an increase in a deep level positioned near the mid-gap, which initially increases the electron trapping time before degrading again at higher Se concentrations. The PICTS peaks present in 7% Se were anomalous relative to the other crystals and are expected to originate from transition metal impurities found in the lower-purity CdSe precursor material.