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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Nondestructive Detection of Cracks in Ceramics Using Vicinal Illumination

Cracks and other defects in ceramic materials can be difficult or impossible to examine and photograph due to the extreme lack of contrast. A method for inspecting translucent ceramics using scattered light, also known as vicinal illumination, will be described. This method has been known in the ceramics industry for quite some time, but is not well known in the testing and failure analysis community. Electronics applications include substrates, packages, multilayer capacitors, and thin film resistors. Ceramic materials are used in electronic applications as microcircuit packages and substrates which carry signals and power between microcircuits. Fine cracks in ceramic materials can result in mechanical failures, electrical failures, and loss of hermeticity. Often, fine cracks are difficult or impossible to detect using standard nondestructive inspection techniques such as visual inspection, ultrasonic inspection, or vapor crack detection. Dye penetrant inspection is usually effective, but contaminates the part, which is unacceptable for space flight hardware. One effective nondestructive inspection method of detecting cracks involves examining the way in which light scatters through the ceramic material when viewed with a standard bright field reflected light microscope. This method, termed vicinal illumination, has been used for detecting cracks during failure analyses of several part types, and screening of space flight hardware. The technique has proven effective on several different types of ceramic materials as well. A related method for use with dark field equipment has also been used to successfully locate otherwise invisible cracks.

Hull, Scott M.↗
NASA NTRS1999

SRAM Based Re-programmable FPGA for Space Applications

An SRAM (static random access memory)-based reprogrammable FPGA (field programmable gate array) is investigated for space applications. A new commercial prototype, named the RS family, was used as an example for the investigation. The device is fabricated in a 0.25 micrometers CMOS technology. Its architecture is reviewed to provide a better understanding of the impact of single event upset (SEU) on the device during operation. The SEU effect of different memories available on the device is evaluated. Heavy ion test data and SPICE simulations are used integrally to extract the threshold LET (linear energy transfer). Together with the saturation cross-section measurement from the layout, a rate prediction is done on each memory type. The SEU in the configuration SRAM is identified as the dominant failure mode and is discussed in detail. The single event transient error in combinational logic is also investigated and simulated by SPICE. SEU mitigation by hardening the memories and employing EDAC (error detection and correction) at the device level are presented. For the configuration SRAM (CSRAM) cell, the trade-off between resistor de-coupling and redundancy hardening techniques are investigated with interesting results. Preliminary heavy ion test data show no sign of SEL (single event latch-up). With regard to ionizing radiation effects, the increase in static leakage current (static I(sub CC)) measured indicates a device tolerance of approximately 50krad(Si).

Wang, J. J.↗
NASA NTRS1998

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Pinsukanjana, Paul R.↗
NASA NTRS1999

Switched RC Multi-Pole Filter

The design and experimental verification of a switched RC multi-pole filter is presented. This highly compact circuit easily obtains sub-Hz, adjustable response utilizing reasonable sized on-chip components, and multiplexing the main resistor and op amp among filter stages. Design considerations for anti-aliasing, noise avoidance, and dynamic op amp compensation are presented.

Shuler, Robert L.↗
NASA NTRS2001

Electronic Model of a Ferroelectric Field Effect Transistor

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

MacLeod, Todd C.↗
NASA NTRS2001

Integration of Passive Components for Spacecraft Avionics

The NASA roadmap outlining future deep space missions to Europa and other outer planetary destinations calls for continued reductions in the mass and volume of the spacecraft avionics. Spacecraft power electronics, including the power switches and converters, remain difficult to miniaturize due to the need for large numbers of discrete passive components such as resistors, capacitors, inductors and transformers. As part of the System-on-a-chip program at the Center for Integrated Space Microsystems and at the University of Arkansas, we are working to develop integrated or embedded passive components geared specifically for use in power management and distribution (PMAD) in future avionics over the next five to ten years. This will not only enable a scaling down of the power subsystems, but will make possible new architectures such as "distributed" PMAD. Additional information is contained in the original extended abstract.

Brandon, E. J.↗
NASA NTRS2001

Performance Testing of a Lightweight, High Efficiency 95 K Cryocooler

Performance data are presented for a flight-like, lightweight, high efficiency pulse tube cryogenic cooler. The cooler has a mass of less than 4.0 kg, and an efficiency of 12 W/W, which is 18% of Carnot at 95 K, nearly double the efficiency of previous cooler designs, The mass of the cooler has been reduced by approximately a factor of three. The design point cooling power is 10 watts at 95 K at a heat rejection temperature of 300 K. The no-load temperature is 45 K. The compressor is built by Hymatic Engineering, UK, and is of a horizontally opposed piston design using flexure bearings. The vertical pulse tube is built by TRW with the heat exchanger or cold block located approximately mid-way along the tube. The final assembly and integration is also performed by TRW. The inertance tube and dead volume are contained within one of the compressor end caps. The cooler was developed by TRW under a joint NASA-DOD program, and has a goal of 10 yr operating lifetime. Potential NASA applications will focus on using coolers of this type in Zero boil off (ZBO) cryogen storage topologies for next generation launch vehicles. Zero boil off systems will feature significant reductions in tank size and Initial Mass to Low Earth Orbit (IMLEO), thereby significantly reducing the cost of access to space, and enabling future missions. The coolers can be used directly in liquid oxygen (LOx) or liquid methane ZBO systems, as shield coolers in liquid hydrogen tanks, or as first stage coolers in two-stage liquid hydrogen (LH2) ZBO cooler systems. Finally, the coolers could find applications in exploration missions where either propellants or breathable oxygen are extracted from the planetary atmosphere using a Sabatier or similar process. The gases could then be liquefied for storage either directly in return vehicle propellant tanks or on the planetary surface. Data presented were taken with the cooler operating in a vacuum of 10 (exp -5) torr, at controlled rejection temperatures from 300 K down to 275 K using a cold water heat exchanger bolted to the cooler. Heat loads were varied between 0.5 W and 15 W by supplying current to a 50 omega resistor mounted on a copper cold plate which was bolted to the cooler cold block. Silicon diodes mounted on both the cold plate and the heat exchanger provided accurate temperature measurement to within plus or minus 0.25 K and plus or minus 0.5 K respectively, up to 100 K with plus or minus 1% accuracy above 100 K. Input power to the compressor was limited to 180 W, corresponding to a maximum stroke of 80%.

Salerno, Lou↗
NASA NTRS2003

Electronic Components and Circuits for Extreme Temperature Environments

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, Richard L.↗
NASA NTRS2003

Advanced Sensor Systems for Biotelemetry

The present invention relates to telemetry-based sensing systems that continuously measures physical, chemical and biological parameters. More specifically, these sensing systems comprise a small, modular, low-power implantable biotelemetry system capable of continuously sensing physiological characteristics using implantable transmitters, a receiver, and a data acquisition system to analyze and record the transmitted signal over several months. The preferred embodiment is a preterm labor and fetal monitoring system. Key features of the invention include Pulse Interval Modulation (PIM) that is used to send temperature and pressure information out of the biological environment. The RF carrier frequency is 174-216 MHz and a pair of RF bursts (pulses) is transmitted at a frequency of about 1-2 Hz. The transmission range is 3 to 10 feet, depending on the position of the transmitter in the body and its biological environment. The entire transmitter is encapsulated in biocompatible silicone rubber. Power is supplied by on-board silver-oxide batteries. The average power consumption of the current design is less than 30 microW, which yields a lifetime of approximately 6 - 9 months. Chip-on-Board technology (COB) drastically reduces the size of the printed circuit board from 38 x 28 mm to 22 x 8 mm. Unpackaged dies are flip-chip bonded directly onto the printed circuit board, along with surface mount resistors and capacitors. The invention can monitor additional physiological parameters including, but not limited to, ECG, blood gases, glucose, and ions such as calcium, potassium, and sodium.

Hines, John W.↗
NASA NTRS2003

Performance of the NASA Digitizing Core-Loss Instrumentation

The standard method of magnetic core loss measurement was implemented on a high frequency digitizing oscilloscope in order to explore the limits to accuracy when characterizing high Q cores at frequencies up to 1 MHz. This method computes core loss from the cycle mean of the product of the exciting current in a primary winding and induced voltage in a separate flux sensing winding. It is pointed out that just 20 percent accuracy for a Q of 100 core material requires a phase angle accuracy of 0.1 between the voltage and current measurements. Experiment shows that at 1 MHz, even high quality, high frequency current sensing transformers can introduce phase errors of a degree or more. Due to the fact that the Q of some quasilinear core materials can exceed 300 at frequencies below 100 kHz, phase angle errors can be a problem even at 50 kHz. Hence great care is necessary with current sensing and ground loops when measuring high Q cores. Best high frequency current sensing accuracy was obtained from a fabricated 0.1-ohm coaxial resistor, differentially sensed. Sample high frequency core loss data taken with the setup for a permeability-14 MPP core is presented.

Schwarze, Gene E.↗
NASA NTRS2003

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Elbuluk, Malik E.↗
NASA NTRS2004

Laboratory Astrophysics using a Microcalorimeter and Bragg Crystal Spectrometer on an Electron Beam Ion Trap

When we last reported, our new microcalorimeter system was being prepared for delivery and permanent installation at the NIST EBIT. This occurred in June 2003 and check-out with the internal calibration source and EBIT plasma x-rays took place over the next several months during which time we modified several component parts to improve the performance. These changes included: 1) A redesign of the x-ray calibration source from a direct electron impact source to one that irradiates the microcalorimeter with fluorescent x-rays. The resulting calibration lines are free of bremsstrahlung background; 2) The microcalorimeter electronic circuit has been significantly improved to ensure long-term stability for the lengthy upcoming runs of the EBIT. Both the preamplifier feedback resistors were changed and the first stage of the preamplifier redesigned. Several photos of the new system are shown in slides 3 and 4. This microcalorimeter spectrometer only requires helium refills every three days (as opposed to every 24 hours in our earlier system) and it will hold a temperature of 65 mK for up to 48 hours (as opposed to 8 hours). Consequently, the efficiency of data acquisition will improve dramatically. The first x-ray spectra of the new calibration source made with the 4-element detector array is shown. An example of the temperature control capabilities of the ADR for a 23 hour interval is shown. The horizontal line shows the temperature stability (about +/- 3 micro kelvin). There are a few short-lived heating excursions caused by technical staff working on the EBIT machine simultaneously. During actual experimental runs these are absent. This temporal profile was interrupted to test additional components of the system; otherwise, the temperature controlling would have continued for another 24 hours.

Silver, Eric↗
NASA NTRS2003

Quantification Of Fire Signatures For Practical Spacecraft Materials

The overall objective of this project is to measure the fire signatures of typical spacecraft materials in 1-g and determine how these signatures may be altered in a microgravity environment. During this project, we will also develop a test technique to obtain representative low-gravity signatures. The specific tasks that will be accomplished to achieve these objectives are to: (1) measure the time history of various fire signatures of typical spacecraft materials in 1-g at varying heating rates, temperatures, convective velocities, and oxygen concentrations, (2) conduct tests in the Zero-Gravity Facility at NASA John H. Glenn Research Center to investigate the manner that a microgravity environment alters the fire signature,(3) compare 0-g and 1-g time histories and determine if 0-g data exhibits the same dependence on the test parameters as experienced in 1-g (4) develop a 1-g test technique by which 0-g fire signatures can be measured. The proposed study seeks to investigate the differences in the identities and relative concentrations of the volatiles produced by pyrolyzing and/or smoldering materials between normal gravity and microgravity environments. Test materials will be representative of typical spacecraft materials and, where possible, will be tested in appropriate geometries. Wire insulation materials of Teflon, polyimide, silicone, and PVC will be evaluated using either cylindrical samples or actual wire insulation. Other materials such as polyurethane, polyimide, melamine, and silicone-based foams will be tested using cylindrical samples, in addition to fabric materials, such as Nomex. Electrical components, such as resistors, capacitors, circuit board will also be tested.

VanderWal, Randy L.↗
NASA NTRS2004

A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS transistors with an n-channel MFSFET. The gate of the MFSFET is connected to a polling voltage pulse instead of the other NMOS transistor drain. The polling voltage pulses are of sufficient magnitude to saturate the ferroelectric gate material and force the MFSFET into a particular logic state. The memory cell circuit is further modified by the addition of a PMOS transistor and a load resistor in order to improve the retention characteristics of the memory cell. The retention characteristics of both the "1" and "0" logic states are simulated. The simulations show that the MFSFET memory cell design can maintain both the "1" and "0" logic states for a long period of time.

Phillips, Thomas A.↗
NASA NTRS2004

Microcalorimeters with NTD and Expitaxial Germanium Thermistors for High Resolution X-Ray Spectroscopy

This is a progress report for the second year of a three year SR&T grant to continue the advancement of NTD-based microcalorimeters. We reported last year that we re-prioritized certain aspects of the statement of work and chose to emphasize issues of array development in the first year rather than wait until year two. Consequently, some of the projects scheduled for the first year were delayed to the second year and we report on those topics here. These include: a) Measurements that map out JFET , thermistor, l/f and feedback resistor noise; b) Investigations that evaluate the limits of the JFET preamplifier circuitry as it pertains to stability at the 2 eV level; The results of a) and b) have led to preliminary measurements that demonstrate 3.08 eV resolution at 6 keV. c) Calculations that can predict the current performance.

Silver, Eric↗
NASA NTRS1996

Determining blood and plasma volumes using bioelectrical response spectroscopy

We hypothesized that an electric field (inductance) produced by charged blood components passing through the many branches of arteries and veins could assess total blood volume (TBV) or plasma volume (PV). Individual (N = 29) electrical circuits (inductors, two resistors, and a capacitor) were determined from bioelectrical response spectroscopy (BERS) using a Hewlett Packard 4284A Precision LCR Meter. Inductance, capacitance, and resistance from the circuits of 19 subjects modeled TBV (sum of PV and computed red cell volume) and PV (based on 125I-albumin). Each model (N = 10, cross validation group) had good validity based on 1) mean differences (-2.3 to 1.5%) between the methods that were not significant and less than the propagated errors (+/- 5.2% for TBV and PV), 2) high correlations (r > 0.92) with low SEE (< 7.7%) between dilution and BERS assessments, and 3) Bland-Altman pairwise comparisons that indicated "clinical equivalency" between the methods. Given the limitation of this study (10 validity subjects), we concluded that BERS models accurately assessed TBV and PV. Further evaluations of the models' validities are needed before they are used in clinical or research settings.

NASA Discipline Number 00-00↗
NASA NTRS2005

High Temperature Performance of a SiC MESFET Based Oscillator

A hybrid, UHF-Band differential oscillator based on 10 w SiC RF Power Metal Semiconductor Field Effect Transistor (MESFET) has been designed, fabricated and characterized through 475 C. Circuit is fabricated on an alumina substrate with thin film spiral inductors, chip capacitors, chip resistors, and wire bonds for all crossovers and interconnectors. The oscillator delivers 15.7 dBm at 515 MHz into a 50 Ohm load at 125 C with a DC to RF conversion efficiency of 2,8%. After tuning the load impedance, the oscillator delivers 18.8 dBm at 610 MHz at 200 C with a DC to RF conversion efficiency of 5.8%. Finally, by tuning the load and bias conditions, the oscillator delivers 4.9 dBm at 453 MHz at 475 C.

Schwartz, Zachary D.↗
NASA NTRS2005

Effect of Architecture on the Resistivity of Carbon Fiber Polymer Composites

The electrical resistivity of carbon fiber laminar composites can be tailored by weave direction, fiber composition, resin composition, applied pressure, and fiber fraction. Although the weave direction was only found to be important in the case of high aspect ratio composites, the other factors were found to influence the resistivity generally. Most intriguing, the resistivity of composites with lamina of different fiber compositions follows a parallel resistor model. This opens the door for higher performance, lower cost composites to be fabricated from these mixed fiber composites.

Gaier, James R.↗