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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Impact of La{sub 2}O{sub 3} interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks deposited by atomic-layer-deposition

We examine the electrical properties of atomic layer deposition (ALD) La{sub 2}O{sub 3}/InGaAs and Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs metal-oxide-semiconductor (MOS) capacitors. It is found that the thick ALD La{sub 2}O{sub 3}/InGaAs interface provides low interface state density (D{sub it}) with the minimum value of ∼3 × 10{sup 11} cm{sup −2} eV{sup −1}, which is attributable to the excellent La{sub 2}O{sub 3} passivation effect for InGaAs surfaces. It is observed, on the other hand, that there are a large amount of slow traps and border traps in La{sub 2}O{sub 3}. In order to simultaneously satisfy low D{sub it} and small hysteresis, the effectiveness of Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks with ultrathin La{sub 2}O{sub 3} interfacial layers is in addition evaluated. The reduction of the La{sub 2}O{sub 3} thickness to 0.4 nm in Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs gate stacks leads to the decrease in hysteresis. On the other hand, D{sub it} of the Al{sub 2}O{sub 3}/La{sub 2}O{sub 3}/InGaAs interfaces becomes higher than that of the La{sub 2}O{sub 3}/InGaAs ones, attributable to the diffusion of Al{sub 2}O{sub 3} through La{sub 2}O{sub 3} into InGaAs and resulting modification of the La{sub 2}O{sub 3}/InGaAs interface structure. As a result of the effective passivation effect of La{sub 2}O{sub 3} on InGaAs, however, the Al{sub 2}O{sub 3}/10 cycle (0.4 nm) La{sub 2}O{sub 3}/InGaAs gate stacks can realize still lower D{sub it} with maintaining small hysteresis and low leakage current than the conventional Al{sub 2}O{sub 3}/InGaAs MOS interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Effect of Halogen Passivation of a Surface on Radiative and Nonradiative Transitions in Silicon Nanocrystals

Within the framework of the density functional theory, the electron structure and the rates of radiative electron–hole transitions and Auger recombination were calculated for silicon nanocrystals, up to 2.5 nm in size, on the surface of which dangling bonds were saturated with chlorine or bromine atoms. Both the radiative and Auger processes were found to be very slow compared with the case of hydrogen cover, which is evidence in favor of the effectiveness of the influence of the “surface chemistry” factor on the electronic and optical properties of nanocrystals.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1998

Active Control of Panel Vibrations Induced by a Boundary Layer Flow

In recent years, active and passive control of sound and vibration in aeroelastic structures have received a great deal of attention due to many potential applications to aerospace and other industries. There exists a great deal of research work done in this area. Recent advances in the control of sound and vibration can be found in the several conference proceedings. In this report we will summarize our research findings supported by the NASA grant NAG-1-1175. The problems of active and passive control of sound and vibration has been investigated by many researchers for a number of years. However, few of the articles are concerned with the sound and vibration with flow-structure interaction. Experimental and numerical studies on the coupling between panel vibration and acoustic radiation due to flow excitation have been done by Maestrello and his associates at NASA/Langley Research Center. Since the coupled system of nonlinear partial differential equations is formidable, an analytical solution to the full problem seems impossible. For this reason, we have to simplify the problem to that of the nonlinear panel vibration induced by a uniform flow or a boundary-layer flow with a given wall pressure distribution. Based on this simplified model, we have been able to study the control and stabilization of the nonlinear panel vibration, which have not been treated satisfactorily by other authors. The vibration suppression will clearly reduce the sound radiation power from the panel. The major research findings will be presented in the next three sections. In Section II we shall describe our results on the boundary control of nonlinear panel vibration, with or without flow excitation. Section III is concerned with active control of the vibration and sound radiation from a nonlinear elastic panel. A detailed description of our work on the parametric vibrational control of nonlinear elastic panel will be presented in Section IV. This paper will be submitted to the Journal of Acoustic Society of America for publication.

Chow, Pao-Liu↗
DOE OSTI2023

Hydrogen in disordered titania: connecting local chemistry, structure, and stoichiometry through accelerated exploration

Hydrogen incorporation in native surface oxides of metal alloys often controls the onset of metal hydriding, with implications for materials corrosion and hydrogen storage. A key representative example is titania, which forms as a passivating layer on a variety of titanium alloys for structural and functional applications. These oxides tend to be structurally diverse, featuring polymorphic phases, grain boundaries, and amorphous regions that generate a disparate set of unique local environments for hydrogen. Here, we introduce a workflow that can efficiently and accurately navigate this complexity. First, a machine learning force field, trained on ab initio molecular dynamics simulations, was used to generate amorphous configurations. Density functional theory calculations were then performed on these structures to identify local oxygen environments, which were compared against experimental observations. Second, to classify subtle differences across the disordered configuration space, we employ a graph-based sampling procedure. Finally, local hydrogen binding energies and hopping kinetics are computed using exhaustive density functional theory calculations on representative configurations. Here, we leverage this methodology to show that hydrogen binding energetics are described by local oxygen coordination, which in turn is affected by stoichiometry, and form the basis of hopping kinetics and diffusion. Together these results imply that hydrogen incorporation and transport in TiO x can be tailored through compositional engineering, with implications for improving the performance and durability of titanium-derived alloys in hydrogen environments.

36 MATERIALS SCIENCE↗
NASA NTRS2003

Structural Mechanics and Dynamics Branch

The 2002 annual report of the Structural Mechanics and Dynamics Branch reflects the majority of the work performed by the branch staff during the 2002 calendar year. Its purpose is to give a brief review of the branch s technical accomplishments. The Structural Mechanics and Dynamics Branch develops innovative computational tools, benchmark experimental data, and solutions to long-term barrier problems in the areas of propulsion aeroelasticity, active and passive damping, engine vibration control, rotor dynamics, magnetic suspension, structural mechanics, probabilistics, smart structures, engine system dynamics, and engine containment. Furthermore, the branch is developing a compact, nonpolluting, bearingless electric machine with electric power supplied by fuel cells for future "more electric" aircraft. An ultra-high-power-density machine that can generate projected power densities of 50 hp/lb or more, in comparison to conventional electric machines, which generate usually 0.2 hp/lb, is under development for application to electric drives for propulsive fans or propellers. In the future, propulsion and power systems will need to be lighter, to operate at higher temperatures, and to be more reliable in order to achieve higher performance and economic viability. The Structural Mechanics and Dynamics Branch is working to achieve these complex, challenging goals.

Stefko, George↗
DOE OSTI2019

Scanning Kelvin Probe Microscopy: A Tool to Investigate Nano-Scale Doping Non-Uniformities in Poly-Si/SiOx Contacts: Preprint

Monocrystalline Si (c-Si) solar cells with passivated contacts based on the ultrathin SiOx and doped polycrystalline Si (poly-Si) layers in a poly-Si/SiOx/c Si structure show high solar cell efficiencies that are ~26%. Excellent surface passivation using these contacts is achieved via the combined effects of chemical passivation of the SiOx/c-Si interface by the SiOx layer and field-effect passivation from the heavily doped poly-Si layer. These contacts give best performance only when annealed to temperatures higher than 850 degrees C. Structural changes in the SiOx layer and dopant diffusion from poly-Si into the underlying c-Si wafer occur during this step which are hard to investigate using conventional characterization techniques. In this work we investigate poly-Si/SiOx contacts with both a 1.5 (tunneling transport) and 2.2 (pinhole transport) nm SiOx layer using atomic force microscopy techniques. Conductive AFM on n+-poly-Si/SiOx/p-Si structures show significant spatial variations for both contact types, likely due to non-uniformities in the poly-Si layer itself. The electrical and structural variations deeper into the contact were revealed by scanning Kelvin probe microscopy after precisely etching away the poly-Si and SiOx layers and few nanometers of c-Si surface. This etching was performed using tetramethylammonium hydroxide and dilute HF solutions. The resulting surface potential maps appear similar for both contacts, and show less than 500 nm size heavily-doped regions. However, further etching of the c-Si surface reveals these heavily-doped regions to be less than 200 nm deep for the 2.2 nm SiOx contact and greater than 200 nm deep for the 1.5 nm SiOx contact.

14 SOLAR ENERGY↗
NASA NTRS2012

Detection Thresholds of Falling Snow from Satellite-Borne Active and Passive Sensors

Precipitation, including rain and snow, is a critical part of the Earth's energy and hydrology cycles. In order to collect information on the complete global precipitation cycle and to understand the energy budget in terms of precipitation, uniform global estimates of both liquid and frozen precipitation must be collected. Active observations of falling snow are somewhat easier to estimate since the radar will detect the precipitation particles and one only needs to know surface temperature to determine if it is liquid rain or snow. The challenges of estimating falling snow from passive spaceborne observations still exist though progress is being made. While these challenges are still being addressed, knowledge of their impact on expected retrieval results is an important key for understanding falling snow retrieval estimations. Important information to assess falling snow retrievals includes knowing thresholds of detection for active and passive sensors, various sensor channel configurations, snow event system characteristics, snowflake particle assumptions, and surface types. For example, can a lake effect snow system with low (~2.5 km) cloud tops having an ice water content (Iwe) at the surface of 0.25 g m-3 and dendrite snowflakes be detected? If this information is known, we can focus retrieval efforts on detectable storms and concentrate advances on achievable results. Here, the focus is to determine thresholds of detection for falling snow for various snow conditions over land and lake surfaces. The analysis relies on simulated Weather Research Forecasting (WRF) simulations of falling snow cases since simulations provide all the information to determine the measurements from space and the ground truth. Results are presented for active radar at Ku, Ka, and W-band and for passive radiometer channels from 10 to 183 GHz (Skofronick-Jackson, et al. submitted to IEEE TGRS, April 2012). The notable results show: (1) the W-Band radar has detection thresholds more than an order of magnitude lower than the future GPM sensors, (2) the cloud structure macrophysics influences the thresholds of detection for passive channels, (3) the snowflake microphysics plays a large role in the detection threshold for active and passive instruments, (4) with reasonable assumptions, the passive 166 GHz channel has detection threshold values comparable to the GPM DPR Ku and Ka band radars with ~0.05 g m-3 detected at the surface, or an ~0.5-1 mm hr-l melted snow rate (equivalent to 0.5-2 cm hr-l solid fluffy snowflake rate).

Jackson, Gail↗
NASA NTRS1995

Three-dimensional flow in a microgravity diffusion flame

The objective is to understand the fluid dynamics in the interaction of large scale, three-dimensional vortex structures and transitional diffusion flames in a microgravity environment. The vortex structures are used to provide a known perturbation of the type used in passive and active shear layer control techniques. 'Passive techniques' refers to manipulation of the system geometry to influence the three dimensional dynamics of vortex structures, and 'active' refers to any technique which adds energy (acoustic or kinetic) to the flow to influence the shear layer vortex dynamics. The passive forcing is provided by an elliptic jet cross section, and the active forcing is incorporated by perturbing the jet velocity.

Hertzberg, Jean↗
NASA NTRS1997

Splitting of Forced Elliptic Jets and Flames

The objective of this work is to understand the fluid dynamics in the interaction of large scale, three-dimensional vortex structures and transitional diffusion flames in a microgravity environment. The vortex structures are used to provide a known perturbation of the type used in passive and active shear layer control techniques. 'Passive techniques' refers to manipulation of the system geometry to influence the three dimensional dynamics of vortex structures, and 'active' refers to any technique which adds energy (acoustic or kinetic) to the flow to influence the shear layer vortex dynamics. In this work the passive forcing is provided by an elliptic jet cross-section, and the active forcing is incorporated by perturbing the jet velocity using a loudspeaker in the plenum section.

Hertzberg, J.↗
DOE OSTI2025

Chromium versus Aluminum: Impact of Nickel Alloy Composition and Interfacial Kinetics on High-Temperature Passivating Oxide Formation

High-temperature corrosion resistance depends critically on the formation of a passivating surface oxide, which is highly sensitive to alloy composition and structure. Such details often elude experimental investigation, and simplified analytical models fail to provide a truly chemical view of passivating oxide evolution. Here, we explicitly compare the fundamental chemistry of Cr and Al as prototypical passivating elements in Ni alloys by directly simulating competing reaction and diffusion processes within the oxide film using kinetic Monte Carlo and density functional theory. We find that the origin and expression of passivating behavior during early-stage thermal oxidation are qualitatively different between the two alloy systems. Ni–Cr alloys feature a sudden onset of passivation associated with a sharp phase transition upon Cr enrichment that directly couples oxidation kinetics to phase transformation behavior. In contrast, Ni–Al alloys display more continuous oxide phase variation with Al enrichment, ultimately resulting in a lower composition threshold for passivation and a thinner passivating layer. In addition, we elucidate the nonobvious role of metal exchange within the alloy near the oxide boundary, which fundamentally alters film composition and passivating behavior. Furthermore, our results have key implications for engineering improved corrosion-resistant alloys, both in terms of compositional variation and processing.

Alloys↗
DOE OSTI2014

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Phenomena Identification and Ranking Table (PIRT) study for metallic structural materials for advanced High-Temperature reactor

The Fluoride High-Temperature Reactor (FHR) technology promises many benefits including passive safety, proliferation-resistant waste forms, and improved economics. However, selection of reliable structural materials and identification of the possible degradation mechanisms for these is important for the licensure and the safe operation of FHRs. In order to address this task, the Georgia Tech led Integrated Research Project (IRP) hosted a Phenomena Identification and Ranking Table (PIRT) panel of experts to address degradation mechanisms and other materials related issues of importance to the FHRs. Futhermore, materials, ones that come in contact with FLiBe or FLiNaK molten salts or other related environments like high temperature steam etc., were considered in this PIRT. Focus of this PIRT was the metallic alloys, especially the ones that are permitted for the construction of elevated temperature Class A components by the ASME code. Degradation mechanisms considered in this PIRT included chemical degradation, mechanical degradation, radiation degradation, and synergistic effect of these mechanisms that may negatively impact operations or cause some safety concerns for the major structural components of FHRs. Main components which were considered included vessel and primary piping, primary heat exchangers, steam generator vessel, steam generator tubes, intermediate loop piping, valves and pumps. Welds in all structural components were identified as an important class of material, which varies in composition and properties, and needs more attention. Importance of impurity control in molten fluorides considered for FHR was highlighted throughout PIRT panel discussions. As a result, this paper gives a summary of important results from the PIRT panel discussions and report.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Predicting stable phase monolayer Mo 2 C (MXene), a superconductor with chemically-tunable critical temperature

Two-dimensional (2D) superconductors have attracted great attention in recent years due to the possibility of new phenomena in lower dimensions. With many bulk transition metal carbides being well-known conventional superconductors, here we perform first-principles calculations to evaluate the possible superconductivity in a 2D monolayer Mo 2 C. Three candidate structures (monolayer alpha-Mo 2 C, 1T MXene-Mo 2 C, and 2H MXene-Mo 2 C) are considered and the most stable form is found to be 2H MXene-Mo 2 C. Electronic structure calculations indicate that both unpassivated and passivated 2H forms exhibit metallic properties. We obtain phonon frequencies and electron–phonon couplings using density-functional perturbation theory, and based on the BCS theory and the McMillan equation, estimate the critical temperatures to be in the ~0–13 K range, depending on the species of surface termination (O, H and OH). The optimal termination group is H, which can increase the electron–phonon coupling and bring the critical temperature to 13 K. This shows a rather high critical temperature, tunable by surface termination, making this 2D carbide an interesting test bed for low-dimensional superconductivity.

Lei, Jincheng↗
DOE OSTI2016

Optical properties of an indium doped CdSe nanocrystal: A density functional approach

We have studied the electronic and optical properties of a CdSe nanocrystal doped with n-type impurity atom. First principle calculations of the CdSe nanocrystal based on the density functional theory (DFT), as implemented in the Vienna Ab Initio Simulation Package (VASP) was used in the calculations. We have introduced a single Indium impurity atom into CdSe nanocrystal with 1.3 nm diameter. Nanocrystal surface dangling bonds are passivated with hydrogen atom. The band-structure, density of states and absorption spectra of the doped and undopted nanocrystals were discussed. Inclusion of the n-type impurity atom introduces an additional electron in conduction band, and significantly alters the electronic and optical properties of undoped CdSe nanocrystal. Indium doped CdSe nannocrystal have potential applications in optoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Systematic sequencing of chloroplast transcript termini from Arabidopsis thaliana reveals >200 transcription initiation sites and the extensive imprints of RNA-binding proteins and secondary structures

Abstract Chloroplast transcription requires numerous quality control steps to generate the complex but selective mixture of accumulating RNAs. To gain insight into how this RNA diversity is achieved and regulated, we systematically mapped transcript ends by developing a protocol called Terminome-seq. Using Arabidopsis thaliana as a model, we catalogued >215 primary 5′ ends corresponding to transcription start sites (TSS), as well as 1628 processed 5′ ends and 1299 3′ ends. While most termini were found in intergenic regions, numerous abundant termini were also found within coding regions and introns, including several major TSS at unexpected locations. A consistent feature was the clustering of both 5′ and 3′ ends, contrasting with the prevailing description of discrete 5′ termini, suggesting an imprecision of the transcription and/or RNA processing machinery. Numerous termini correlated with the extremities of small RNA footprints or predicted stem-loop structures, in agreement with the model of passive RNA protection. Terminome-seq was also implemented for pnp1–1, a mutant lacking the processing enzyme polynucleotide phosphorylase. Nearly 2000 termini were altered in pnp1–1, revealing a dominant role in shaping the transcriptome. In summary, Terminome-seq permits precise delineation of the roles and regulation of the many factors involved in organellar transcriptome quality control.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both AlGaN/GaN and InAlN/GaN based devices.

Colon, Albert↗
DOE OSTI2022

Detecting thermal crack growth on a large additive manufactured structure using acoustic emission

Large format additive manufacturing (LFAM) proved to have a great potential to become an adjacent technology to traditional manufacturing methods. One of the sectors LFAM is targeting is rapid tool/mold development for composites. This includes large mold structures used for high-temperature molding techniques (in-oven or autoclave). Although, these large printed structures (reaching hundreds of pounds) develop thermal-residual stress during cool-down and can eventually crack, turning the structure into waste. Acoustic emission (AE), a passive non-intrusive global nondestructive evaluation (NDE) technique, was used to monitor crack growth and can provide the right tools that can be used for feedback loop for corrective action. This research performs thermal testing on a large AM mold with preexisting cracks, in an attempt to monitor crack growth using AE. AE was able to detect, identify and locate the crack source by means of acoustic features, waveform characteristics, spectrum analysis, and difference in arrival times.

Spencer, Ryan↗
DOE OSTI2020

Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites

Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells.

14 SOLAR ENERGY↗