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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Dual-frequency bistatic-radar investigations of the moon with Apollos 14 and 15.

Simultaneous 13- and 116-cm wavelength radio transmissions from the Apollo 14 and 15 spacecraft were received on the earth after reflection from the lunar surface. The received data were processed to obtain complete polarization and power spectra of the echo signal; the ellipticity, orientation, and magnitude of the deterministically polarized part were obtained as a function of frequency. The polarized parts of the echo spectra were then reduced according to the theory of quasi-specular scattering from a gently undulating surface. The unpolarized portions of the echo spectra were associated with a diffuse scattering mechanism. Within Mare Serenitatis and Oceanus Procellarum, the 13-cm data follow a classical Fresnel reflection curve corresponding to relative dielectric constant epsilon = 3.1 plus or minus 0.1. Over most of these same areas, the 116-cm data are consistent with this value of relative dielectric constant. In some areas, however, notably between Reiner and Hevelius, there are marked deviations from the reflectivities predicted for epsilon = 3.1. These results cannot be explained on the basis of simple models employing contiguous, semiinfinite, dielectric interfaces.

Tyler, G. L.↗
NASA NTRS1984

Studies of directionally solidified eutectic Bi/MnBi at low growth velocities

The (lambda-squared)(V) deviation for diffusion-only rod eutectic growth, where lambda is the interrod spacing and V is the growth velocity, was studied at growth velocities less than 5 cm/h in directionally solidified eutectic Bi-Mn (Bi/MnBi). At lower growth velocities, (V less than 0.5 cm/h) morphological instability occurred which resulted in nonaligned, irregularly dispersed MnBi fibers. The (lambda-squared)(V) relation was experimentally determined over a range of growth velocities between 0.1 and 50 cm/h, thermal gradients in the liquid at the liquid-solid interface that varied from 40 to 120 C/cm and solidification orientation with respect to the direction of gravity. Naturally induced, convective instabilities are suggested as a possible growth velocity limit for cooperative growth in the Bi-Mn and related alloy systems.

Pirich, R. G.↗
NASA NTRS2005

Gradient Driven Fluctuations

We have worked with our collaborators at the University of Milan (Professor Marzio Giglio and his group-supported by ASI) to define the science required to measure gradient driven fluctuations in the microgravity environment. Such a study would provide an accurate test of the extent to which the theory of fluctuating hydrodynamics can be used to predict the properties of fluids maintained in a stressed, non-equilibrium state. As mentioned above, the results should also provide direct visual insight into the behavior of a variety of fluid systems containing gradients or interfaces, when placed in the microgravity environment. With support from the current grant, we have identified three key systems for detailed investigation. These three systems are: 1) A single-component fluid to be studied in the presence of a temperature gradient; 2) A mixture of two organic liquids to be studied both in the presence of a temperature gradient, which induces a steady-state concentration gradient, and with the temperature gradient removed, but while the concentration gradient is dying by means of diffusion; 3) Various pairs of liquids undergoing free diffusion, including a proteidbuffer solution and pairs of mixtures having different concentrations, to allow us to vary the differences in fluid properties in a controlled manner.

Cannell, David↗
NASA NTRS1995

Properties of the +70 kilometers per second cloud toward HD 203664

I present high-resolution International Ultraviolet Explorer (IUE) spectra of the ultraviolet absorption in an intermediate-velocity interstellar cloud (nu(sub LSR) approximately equal to +70 km/s) toward HD 203664. The combined, multiple IUE images result in spectra with S/N = 15-40 and resolutions of approximately 20-25 km/s. The intermediate-velocity cloud absorption is present in ultraviolet lines of C II, C II(sup *), C IV, N I, O I, Mg I, Mg II, Al II, Al III, Si II, Si III, Si IV, S II, Cr II, Mn II, Fe II, and Zn II. The relative abundances of low-ionization species suggest an electron density of 0.15-0.34/cu cm and a temperature of 5300-6100 K in the neutral and weakly ionized gas. Given the presence of high-ionization gas tracers such as Si IV and C IV, ionized portions of the cloud probably contribute to the relatively large values of n(sub e) derived from measurements of the lower ionization species. The high-ionization species in the cloud have an abundance ratio, N(C IV)/N(Si IV) approximately equal to 4.5, similar to that inferred for collisionally ionized cloud interfaces at temperatures near 10(exp 5) K along other sight lines. When referenced to sulfur, the abundances of most elements in the cloud are within a factor of 5 of their solar values, which suggests that the +70 km/s gas has a previous origin in the Galactic disk despite a recent determination by Little et al. that the cloud lies at a distance of 200-1500 pc below the Galactic plane. I have checked this result against a model of the ionization for the diffuse ionized gas layer of the Galaxy and find that this conclusion is essentially unchanged as long as the ionization parameter is low as implied by the abundances of adjoining ionization states of aluminum and silicon. The processes responsible for the production of highly ionized gas in the +70 km/s cloud appear to be able to account for the inferred dust grain destruction as well.

Sembach, Kenneth R.↗
NASA NTRS2001

Thermal Processing Effects on the Adhesive Strength of PS304 High Temperature Solid Lubricant Coatings

In this paper the effects of post deposition heat treatments on the cohesive and adhesive strength properties of PS304, a plasma sprayed nickel-chrome based, high temperature solid lubricant coating deposited on stainless steel, are studied. Plasma spray deposited coating samples were exposed in air at temperatures from 432 to 650 C for up to 500 hr to promote residual stress relief, enhance particle to particle bonding and increase coating to substrate bond strength. Coating pull-off strength was measured using a commercial adhesion tester that utilizes 13 mm diameter aluminum pull studs attached to the coating surface with epoxy. Pull off force was automatically recorded and converted to coating pull off strength. As deposited coating samples were also tested as a baseline. The as-deposited (untreated) samples either delaminated at the coating-substrate interface or failed internally (cohesive failure) at about 17 MPa. Samples heat treated at temperatures above 540 C for 100 hr or at 600 C or above for more than 24 hr exhibited strengths above 31 MPa, nearly a two fold increase. Coating failure occurred inside the body of the coating (cohesive failure) for nearly all of the heat-treated samples and only occasionally at the coating substrate interface (adhesive failure). Metallographic analyses of heat-treated coatings indicate that the Nickel-Chromium binder in the PS304 appears to have segregated into two phases, a high nickel matrix phase and a high chromium precipitated phase. Analysis of the precipitates indicates the presence of silicon, a constituent of a flow enhancing additive in the commercial NiCr powder. The exact nature and structure of the precipitate phase is not known. This microstructural change is believed to be partially responsible for the coating strength increase. Diffusion bonding between particles may also be playing a role. Increasing the heat treatment temperature, exposure time or both accelerate the heat treatment process. Preliminary measurements indicate that the heat treatment also results in a one time, permanent coating thickness increase of about 3%. Based upon these results, the incorporation of a heat treatment prior to final finishing has been incorporated in the application process of this coating technology.

DellaCorte, Christopher↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1983

Advanced methods for preparation and characterization of infrared detector materials

Crystals were prepared by the Bridgman-Stockbarger method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady-state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of solute redistribution during the crystal growth of the alloys. Measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Experiments were conducted to determine the ternary phase equilibria in selected regions of the Hg-Cd-Te constitutional phase diagram. Electron and hole mobilities as functions of temperature were analyzed to establish charge-carrier scattering probabilities. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge-carrier concentration, charge-carrier mobilities, Hall coefficient, and Dermi Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Broerman, J. G.↗
NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.

Biegal, Bryan A.↗
NASA NTRS1992

Convective effects during the physical vapor transport process. I - Thermal convection

The effects of convection on diffusive-convective physical vapor transport process are examined computationally. We analyze conditions ranging from typical laboratory conditions to conditions achievable only in a low gravity environment. This corresponds to thermal Rayleigh numbers Ra(T) ranging from 1.80 to 1.92 x 10 exp 6. Our results indicate that the effect of the sublimation and condensation fluxes at the boundaries is 10 increase the threshold of instability. For typical ground based conditions time dependent oscillatory convection can occur. This results in nonuniform temperature and concentration gradients at the crystal interface. Spectral analysis of the flow field shows regions of both periodic and quasi-periodic states. Low gravity conditions can effectively reduce convective effects, thus resulting in uniform temperature and concentration gradients at the interface, a desirable condition for crystal growth.

Duval, Walter M. B.↗
NASA NTRS1980

Advanced methods for preparation and characterization of infrared detector materials

Mercury cadmium telluride crystals were prepared by the Bridgman method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of the crystal growth kinetics for the Hg(i-x)CdxTe alloys, and measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential thermal analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge carrier concentrations, charge carrier mobilities, Hall coefficient, optical absorptance, and Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Lehoczky, S. L.↗
NASA NTRS1981

Diagnostic study of BSF silicon solar cells

Solar cells equipped with back surface fields (BSF) were fabricated by means of an aluminum alloy, boron diffusion, and boron ion implantation. The importance of initial thickness, resistivity, orientation, and the crystal growth method were examined. Aluminum in paste form was screen printed on the cell, followed by alloy formation at 800 C for a minute. Application of the BSFs resulted in open circuit voltage improvements dependent on the substrate resistivity, ranging from 10 mV at 0.3 ohm-cm to 50 mV at 15 ohm-cm. The gains in performance were attributed to a longer penetration depth, a heightened concentration profile at the interface, and higher concentrations in the p+ layer.

Yoo, H.↗
NASA NTRS2018

Improved Pyrotechnic Shock Scaling Method Based on Shock Response Spectrum and Statistical Energy Analysis

It has been more than forty years since the pyrotechnic shock scaling method was introduced. The scaling method estimates the attenuation of the Shock Response Spectrum (SRS) based on the distance from the source, structural configurations, types of structural joints and interfaces, and intervening structure [1]. The method has been successfully used in the spacecraft community countless times and still is frequently used to develop pyrotechnic shock requirements at various levels of assembly of a spacecraft. However, since the method was derived empirically from a limited set of shock test data [2], the aerospace community has been looking for an alternative approach. In this paper, a computational scaling method based on Statistical Energy Analysis (SEA) is re-visited. SEA is traditionally used as a method for investigating the diffusion of acoustic and vibratory energies of a system at steady-state [3]. Previously, an approach using the SRS as an acceleration constraint condition to the SEA model was introduced to estimate the attenuation from a shock source [4,5]. In the current investigation, additional examples are provided to further validate the approach. In addition, responses in the time domain are produced by the Local Modal Phase Reconstruction (LMPR) approach which was recently introduced to the community [6].

Fernandez, Juan P.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1998

The Effects of Ground and Space Processing on the Properties of Organic, Polymeric, and Colloidal Materials

In recent years, a great deal of interest has been directed toward the use of organic materials in the development of high-efficiency optoelectronic and phototonic devices. There is a myriad of possibilities among organic materials which allow flexibility in the design of unique structures with a variety of functional groups. The use of nonlinear optical (NLO) organic materials as thin film wave-guides allows full exploitation of their desirable qualifies by permitting long interaction lengths and large susceptibilities allowing modest power input. There are several methods in use to prepare thin films such as Langmuir-Blodgett (LB) and self-assembly techniques, vapor deposition, growth from sheared solution or melt, and melt growth between glass plates. Organic-based materials have many features that make them desirable for use in optical devices, such as high second-and third-order nonlinearity, flexibility of molecular design, and damage resistance to optical radiation. However, their use in devices has been hindered by processing difficulties for crystals and thin films. We discuss the potential role of microgravity processing of a few organic and polymeric materials. It is of interest to note how materials with second-and third-order NLO behavior may be improved in a diffusion-limited environment and ways in which convection may be detrimental to these materials. We focus our discussion on third-order materials for all-optical switching, and second-order materials for frequency conversion and electrooptics. The goal of minimizing optical loss obviously depends on processing methods. For solution-based processes, such as solution crystal growth and solution photopolymerization, it is well known that thermal and solutal density gradients can initiate buoyancy-driven convection. Resultant fluid flows can affect transport of material to and from growth interfaces and become manifest in the morphology and homogeneity of the growing film or crystal. Likewise, buoyancy-driven convection can hinder production of defect-free, high-quality crystals or films during crystal and film growth by vapor deposition.

Frazier, Donald O.↗
NASA NTRS2007

Increasing Durability of Flame-Sprayed Strain Gauges

Thermally sprayed dielectric ceramic coatings are the primary means of attaching strain and temperature gauges to hot-section rotating parts of turbine engines. As hot-section temperatures increase, lifetimes of installed gauges decrease, and seldom exceed one hour above 2,000 F (approx.1,100 C). Advanced engine components are expected to operate at temperatures approaching 2,200 F (approx.1,200 C), and the required high-temperature lifetime is 10 hours minimum. Typically, to enable a ceramic coating to adhere to the smooth surface of an engine component, a thermally sprayed NiCrAlY or NiCoCrAlY bond coat is applied to the smooth surface, thereby providing a textured surface to which the ceramic coat can adhere. The main failure mechanism of this system is decohesion and/or delamination at the interface between the ceramic top coat and the bond coat, caused by oxidation of the bond coat and stresses from the mismatch between the coefficients of thermal expansion of the ceramic top coat and the metallic bond coat. The approach taken to increase the high-temperature lifetime of a gauge attached to an engine component by the method described above involves (1) selective oxidation of the bond coat by means of a heat treatment in reduced oxygen partial pressure followed by (2) the application of a noble-metal diffusion barrier. In experiments to test this approach, heat treatments of NiCoCrAlY bond coats were carried out in a tube furnace in which, in each case, the temperature was alternately (1) increased at a rate of 3 C per minute and (2) held steady for one hour until the desired temperature was reached. The tube furnace was continuously purged with dry nitrogen gas. A final heat-treatment temperature range of 1,600 to 1,800 F (871 to 982 C) proved most beneficial.

Gregory, Otto J.↗
NASA NTRS1994

Convection in the Physical Vapor Transport Process-I: Thermal

The effects of convection on diffusive-convective physical vapor transport process are examined computationally. We analyze conditions ranging from typical laboratory conditions to conditions achievable only in a low gravity environment. This corresponds to thermal Rayleigh numbers Ra, ranging from 1.80 x 10 to 1.92 x 10(exp 6). Our results indicate that the effect of the sublimation and condensation fluxes at the boundaries is to increase the threshold of instability. For typical ground based conditions, time dependent oscillatory convection can occur. This results in unsteady transport, and non- uniform temperature and concentration gradients at the crystal interface. Spectral analysis of the flow field shows parametric regions exhibiting both an oscillatory approach to steady state and a chaotic transient to a periodic state. Low gravity conditions stabilize the flow field. Convective effects are effectively reduced, thus resulting in uniform temperature and concentration gradients at the interface, a desirable condition for crystal growth.

Duval, Walter M. B.↗
NASA NTRS1979

Trends and Techniques for Space Base Electronics

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.

Trotter, J. D.↗