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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Gravitational Influences on the Growth of Polydiacetylene Films by Ultraviolet Solution Polymerization

Technically, the field of integrated optics using organic/polymer materials as a new means of information processing, has emerged as of vital importance to optical computers, optical switching, optical communications, the defense industry, etc. The goal is to replace conventional electronic integrated circuits and wires by equivalent miniaturized optical integrated circuits and fibers, offering larger bandwidths, more compactness and reliability, immunity to electromagnetic interference and less cost. From the Code E perspective, this research area represents an opportunity to marry "front-line" education in science and technology with national scientific and technological interests while maximizing human resources utilization. This can be achieved by the development of untapped resources for scientific research - such as minorities, women, and universities traditionally uninvolved in scientific research.

Frazier, Donald O.↗
NASA NTRS2006

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS2016

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

dielectric performance↗
NASA NTRS1985

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

Bhasin, K. B.↗
NASA NTRS1995

Power control electronics for cryogenic instrumentation

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Ray, Biswajit↗
DOE OSTI2024

Post-processing of phase change material in a zero-change commercial silicon photonic process

Integration of phase change material (PCM) with photonic integrated circuits can transform large-scale photonic systems by providing non-volatile control over phase and amplitude. The next generation of commercial silicon photonic processes can benefit from the addition of PCM to enable ultra-low power, highly reconfigurable, and compact photonic integrated circuits for large-scale applications. Despite all the advantages of PCM-based photonics, today’s commercial foundries do not provide them in their silicon photonic processes yet. We demonstrate the first-ever electrically programmable PCM device that is monolithically post-processed in a commercial foundry silicon photonics process using a few fabrication steps and coarse-resolution photolithography. These devices achieved 1.4 dB/μm of amplitude switching contrast using a thin layer of 12.5 nm GeSbTe in this work. We have also characterized the reconfiguration speed as well as repeatability of these devices over 20,000 switching cycles. Our solution enables non-volatile photonic VLSI systems that can be fabricated at low cost and high reliability in a commercial foundry process, paving the way for the development of non-volatile programmable photonic integrated circuits for a variety of emerging applications.

Optics↗
DOE OSTI2021

System-on-Chip approach microwave diagnostics development for burning plasma

System-on-chip (SoC) millimeter wave integrated circuit technology has been developed and employed in chip heterodyne radiometers in Electron Cyclotron Emission Imaging (ECEI) and Microwave Imaging Reflectometer (MIR) on the DIII-D tokamak for 2D electron temperature and density fluctuation diagnostics. The W-band (75-110 GHz) ECEI system has been employed with 20 poloidal horn receiver modules with customized monolithic integrated circuit chips and internal local oscillator coupling path. The new SoC approach demonstrates > 30 dB additional gain on the receiver and 95% electronics noise suppression compared to the previous Schottky diode mixer array . An F-band (110-140 GHz) receiver chip has been developed to measure MHD and turbulence behavior on the DIII-D high-field side, such as Alfven eigenmodes. Furthermore, it can image pedestal structure evolution on fusion facilities with stronger magnetic fields, such as ASDEX-U, EAST, HL-2M, and LHD. The F-band chip performance has been tested in the laboratory. Also, V-band (55-75 GHz) transmitter and receiver modules (55-75 GHz) have been developed for DIII-D and NSTX-U Furthermore, microwave Imaging Reflectometer (MIR) application suitability for 2D density fluctuation imaging on the pedestal region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2006

Dual Common Planes for Time Multiplexing of Dual-Color QWIPs

A proposed improved method of externally controlled time multiplexing of the readouts of focal-plane arrays of pairs of stacked quantum-well infrared photodetectors (QWIPs) that operate in different wavelength bands is based on a dual-detector-common-plane circuit configuration. The method would be implemented in a QWIP integrated-circuit chip hybridized with a readout integrated-circuit (ROIC) chip.

Rafol, Sir B.↗
DOE OSTI2020

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Abstract New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm 2 V −1 s −1 , due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm 2 V –1 s –1 and a subthreshold slope of 0.29 V dec –1 . Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐ k gate insulator (ALD Al 2 O 3 ), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.

Allemang, Christopher R.↗
NASA NTRS1972

Long life assurance study for manned spacecraft long life hardware. Volume 2: Long life assurance studies of EEE parts and packaging

Guidelines for the design, development, and fabrication of electronic components and circuits for use in spacecraft construction are presented. The subjects discussed involve quality control procedures and test methodology for the following subjects: (1) monolithic integrated circuits, (2) hybrid integrated circuits, (3) transistors, (4) diodes, (5) tantalum capacitors, (6) electromechanical relays, (7) switches and circuit breakers, and (8) electronic packaging.

Source record↗
NASA NTRS1981

Liquid immersion apparatus for minute articles

Apparatus is disclosed for immersing minute integrated circuit chips in an etching solution in manufacturing integrated circuits during research and development. The apparatus includes a holder, having a handle and basket support for carrying a removable unitary basket and lid structure where fluid flow-through passages are formed, and wherein graduated openings in the handle provide for adjustably supporting the basket in a breaker at a desired level.

Belcher, J. G., Jr.↗
NASA NTRS1983

High stability amplifier

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Adams, W. A.↗
NASA NTRS1990

Asymmetric Memory Circuit Would Resist Soft Errors

Some nonlinear error-correcting codes more efficient in presence of asymmetry. Combination of circuit-design and coding concepts expected to make integrated-circuit random-access memories more resistant to "soft" errors (temporary bit errors, also called "single-event upsets" due to ionizing radiation). Integrated circuit of new type made deliberately more susceptible to one kind of bit error than to other, and associated error-correcting code adapted to exploit this asymmetry in error probabilities.

Buehler, Martin G.↗
NASA NTRS1981

A high capacity satellite switched TDMA microwave switch matrix

A description is given of the conceptual design of a high-capacity satellite switched-time division multiple access (SS-TDMA) microwave switch matrix fabricated with GaAs monolithic microwave integrated circuits (MMICs), including integration of both microwave and control logic circuits into the monolithic design. The technology required for a 30/20 GHz communications system includes an on-board SS-TDMA switch matrix. A conceptual design study that has been completed for a wideband, high-capacity (typically 100 x 100) channel switch matrix using technology anticipated for 1987 is described, noting that the study resulted in a switch matrix design concept using a coupled crossbar architecture implemented with MMIC. The design involves basic building block MMIC, permitting flexible growth and efficient wraparound redundancy to increase reliability.

Cory, B. J.↗
NASA NTRS1996

Semiconductor Cubing

Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

Source record↗
NASA NTRS2014

Challenges and Techniques in Measurements of Noise, Cryogenic Noise and Power in Millimeter-Wave and Submillimeter-Wave Amplifiers

We will present the topic of noise measurements, including cryogenic noise measurements, of Monolithic Microwave Integrated Circuit (MMIC) and Sub-Millimeter-Wave Monolithic Microwave Integrated Circuit (S-MMIC) amplifiers, both on-wafer, and interfaced to waveguide modules via coupling probes. We will also present an overview of the state-of-the-art in waveguide probe techniques for packaging amplifier chips, and discuss methods to obtain the lowest loss packaging techniques available to date. Linearity in noise measurements will be discussed, and experimental methods for room temperature and cryogenic noise measurements will be presented. We will also present a discussion of power amplifier measurements for millimeter-wave and submillimeter-wave amplifiers, and the tools and hardware needed for this characterization.

Samoska, Lorene↗
DOE OSTI2023

Synchronous micromechanically resonant programmable photonic circuits

Abstract Programmable photonic integrated circuits (PICs) are emerging as powerful tools for control of light, with applications in quantum information processing, optical range finding, and artificial intelligence. Low-power implementations of these PICs involve micromechanical structures driven capacitively or piezoelectrically but are often limited in modulation bandwidth by mechanical resonances and high operating voltages. Here we introduce a synchronous, micromechanically resonant design architecture for programmable PICs and a proof-of-principle 1×8 photonic switch using piezoelectric optical phase shifters. Our design purposefully exploits high-frequency mechanical resonances and optically broadband components for larger modulation responses on the order of the mechanical quality factor Q m while maintaining fast switching speeds. We experimentally show switching cycles of all 8 channels spaced by approximately 11 ns and operating at 4.6 dB average modulation enhancement. Future advances in micromechanical devices with high Q m , which can exceed 10000, should enable an improved series of low-voltage and high-speed programmable PICs.

42 ENGINEERING↗
NASA NTRS1991

Mixed application MMIC technologies - Progress in combining RF, digital and photonic circuits

Approaches for future 'mixed application' monolithic integrated circuits (ICs) employing optical receive/transmit, RF amplification and modulation and digital control functions are discussed. We focus on compatibility of the photonic component fabrication with conventional RF and digital IC technologies. Recent progress at Honeywell in integrating several parts of the desired RF/digital/photonic circuit integration suite required for construction of a future millimeter-wave optically-controlled phased-array element are illustrated.

Swirhun, S.↗