Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “electronics analysis”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9 kA/cm{sup 2}) and low ON-resistance (0.4 mΩ cm{sup 2}) are demonstrated. Non-planar selective area regrowth is identified as the limiting factor to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Analysis of the structural, electronic and optic properties of Ni doped MgSiP{sub 2} semiconductor chalcopyrite compound

The structural, electronic band structure and optic properties of the Ni doped MgSiP{sub 2} chalcopyrite compound have been performed by using first-principles method in the density functional theory (DFT) as implemented in Vienna Ab-initio Simulation Package (VASP). The generalized gradient approximation (GGA) in the scheme of Perdew, Burke and Ernzerhof (PBE) is used for the exchange and correlation functional. The present lattice constant (a) follows generally the Vegard’s law. The electronic band structure, total and partial density of states (DOS and PDOS) are calculated. We present data for the frequency dependence of imaginary and real parts of dielectric functions of Ni doped MgSiP{sub 2}. For further investigation of the optical properties the reflectivity, refractive index, extinction coefficient and electron energy loss function are also predicted. Our obtained results indicate that the lattice constants, electronic band structure and optical properties of this compound are dependent on the substitution concentration of Ni.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Analysis of the fast electron scaling theory for the heating of a solid target

Simple scaling laws for laser-generated fast electron heating of solids that employ a Spitzer-like resistivity are unlikely to be universally adequate as this model does not produce an adequate description of a material's behaviour at low temperatures. This is demonstrated in this paper by using both numerical simulations and by comparing existing analytical scaling laws for low temperature resistivity. Generally, we find that, in the low temperature regime, the scaling for the heating of the background material has a much stronger dependence on the key empirical parameters (laser intensity, pulse duration, etc.).

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Analysis of magnetically immersed electron guns with non-adiabatic fields

Electron diode guns, which have strongly varying magnetic or electric fields in a cathode-anode gap, were investigated in order to generate laminar electron beams with high current density using magnetically immersed guns. By creating a strongly varying radial electric field in a cathode-anode gap of the electron gun, it was demonstrated that the optical properties of the gun can be significantly altered, which allows the generation of a laminar, high-current electron beam with relatively low magnetic field on the cathode. The relatively high magnetic compression of the electron beam achieved by this method is important for producing electron beams with high current density. A similar result can be obtained by inducing a strong variation of the magnetic field in a cathode-anode gap. It was observed that creating a dip in the axial magnetic field in the cathode-anode gap of an adiabatic electron gun has an optical effect similar to guns with strong variation of radial electric field. By analyzing the electron trajectories angles and presenting the results in a gun performance map different geometries of magnetically immersed electron guns with non-adiabatic fields are compared with each other and with a more traditional adiabatic electron gun. Some advantages and limitations of guns with non-adiabatic fields are outlined. In conclusion, the tests results of non-adiabatic electron gun with modified magnetic field are presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2012

Colour-producing [beta]-keratin nanofibres in blue penguin (Eudyptula minor) feathers

The colours of living organisms are produced by the differential absorption of light by pigments (e.g. carotenoids, melanins) and/or by the physical interactions of light with biological nanostructures, referred to as structural colours. Only two fundamental morphologies of non-iridescent nanostructures are known in feathers, and recent work has proposed that they self-assemble by intracellular phase separation processes. Here, we report a new biophotonic nanostructure in the non-iridescent blue feather barbs of blue penguins (Eudyptula minor) composed of parallel {beta}-keratin nanofibres organized into densely packed bundles. Synchrotron small angle X-ray scattering and two-dimensional Fourier analysis of electron micrographs of the barb nanostructure revealed short-range order in the organization of fibres at the appropriate size scale needed to produce the observed colour by coherent scattering. These two-dimensional quasi-ordered penguin nanostructures are convergent with similar arrays of parallel collagen fibres in avian and mammalian skin, but constitute a novel morphology for feathers. The identification of a new class of {beta}-keratin nanostructures adds significantly to the known mechanisms of colour production in birds and suggests additional complexity in their self-assembly.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Harmonic Modeling, Data Generation and Analysis of Power Electronics-Interfaced Residential Loads

The share of electronics-based residential load is expected to rise as devices such as variable frequency drives (VFDs), electric vehicle chargers, and inverter-based distributed energy resources (DERs), e.g., photovoltaic (PV) systems become more common. These loads may introduce significant harmonics into power networks that need to be closely studied in order to perform accurate load modeling and forecasting. However, it can be difficult to obtain harmonic-rich voltage and current data - necessary for identifying accurate load models - for residential electrical loads. Recognizing this need, we identify and model a set of electronics-based end-use loads and DERs in an electromagnetic transients program (EMTP) tool for a residence with a single- phase split-phase supply. Further, a procedure is developed to model harmonic interactions between end-use loads connected to the same non-ideal supply voltage in a residential setting. Finally, a harmonic-rich dataset produced via the proposed procedure is utilized to identify frequency coupling matrix (FCM) based load model. Numerical results demonstrate the accuracy of the model, and explore model identifiability with limited data points.

harmonics, power quality, load modeling↗
NASA NTRS1973

Analysis of low energy electrons

Simultaneous observations of low energy electrons in the plasma sheet and in the auroral zone were analyzed. Data from the MIT plasma experiment on the OGO-3 satellite and from the Lockheed experiment on the OV1-18 satellite were processed and compared. The OV1-18 carried thirteen magnetic electron spectrometers designed to measure the intensity, angular, and energy distributions of the auroral electrons and protons in the energy range below 50 keV. Two computer programs were developed for reduction of the OV1-18 data. One program computed the various plasma properties at one second intervals as a function of Universal Time and pitch angle; the other program produced survey plots showing the outputs of the various detectors on the satellite as a function of time on a scale of approximately 100 seconds per cm. The OV1-18 data exhibit the high degree of variability associated with substorm controlled phenomena.

Sharp, R. D.↗