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At least 523 records · Page 29

ACT W-DED Mid-year report

Thus far in FY 23 the Sandia team has made accomplishments on several fronts. A major focus has been completing testing to compare small scale tensile properties found through high throughput tensile (HTT) tests to bulk tensile properties found through standard ASTM E8 test methods. These comparisons have been completed in previously manufactured wire arc additively manufactured (WAAM) Ti-6Al-4V material and electron beam additively manufactured (EBAM) Ti-6Al-4V material in the as built and heat-treated conditions. Figure 1 shows the distribution of both HTT and E8 test results indicating the distributions are not significantly different. This result gives confidence that HTT coupon geometries can be utilized for accelerated process development and optimization moving forward

36 MATERIALS SCIENCE↗

Center for Applied Radiation Research (CARR)

Prairie View A&M University (PVAMU) Center for Applied Radiation Research (CARR) was established in 1995 to address the tasks, missions and technological needs of NASA. CARR is built on a tradition of radiation research at Prairie View A&M started in 1984 with NASA funding. This continuing program has lead to: (1) A more fundamental and practical understanding of radiation effects on electronics and materials; (2) A dialog between space, military and commercial electronics manufacturers; (3) Innovative electronic circuit designs; (4) Development of state-of-the-art research facilities at PVAMU; (5) Expanded faculty and staff to mentor student research; and (6) Most importantly, increased flow in the pipeline leading to expanded participation of African-Americans and other minorities in science and technological fields of interest to NASA.

Fogarty, Thomas N.↗

Linker Redox Mediated Control of Morphology and Properties in Semiconducting Iron‐Semiquinoid Coordination Polymers**

Abstract The emergence of conductive 2D and less commonly 3D coordination polymers (CPs) and metal–organic frameworks (MOFs) promises novel applications in many fields. However, the synthetic parameters for these electronically complex materials are not thoroughly understood. Here we report a new 3D semiconducting CP Fe 5 (C 6 O 6 ) 3 , which is a fusion of 2D Fe‐semiquinoid materials and 3D cubic Fe x (C 6 O 6 ) y materials, by using a different initial redox‐state of the C 6 O 6 linker. The material displays high electrical conductivity (0.02 S cm −1 ), broad electronic transitions, promising thermoelectric behavior ( S 2 σ=7.0×10 −9 W m −1 K −2 ), and strong antiferromagnetic interactions at room temperature. This material illustrates how controlling the oxidation states of redox‐active components in conducting CPs/MOFs can be a “pre‐synthetic” strategy to carefully tune material topologies and properties in contrast to more commonly encountered post‐synthetic modifications.

Wang, Lei↗

Improved high voltage insulator for use in vacuum

High voltage insulator for electron bombardment ion thruster has electric field directed through dielectric material and electrons emitted by field emission are constrained in negative junction region. Surface flashover and unstable operation are eliminated, and maximum voltage is limited only by dielectric strength of material, aluminum oxide in this case.

Byers, D. C.↗

Working group written presentation: Trapped radiation effects

The results of the Trapped Radiation Effects Panel for the Space Environmental Effects on Materials Workshop are presented. The needs of the space community for new data regarding effects of the space environment on materials, including electronics are listed. A series of questions asked of each of the panels at the workshop are addressed. Areas of research which should be pursued to satisfy the requirements for better knowledge of the environment and better understanding of the effects of the energetic charged particle environment on new materials and advanced electronics technology are suggested.

Vampola, Alfred L.↗

Enhanced electronic sensors

A micro-structured device that can improve sensitivity and signal-to-noise for electronic sensor materials is embedded in electrically resistive materials. The technology includes a three-dimensional embedded electrode structure and fabrication methods for making the device for electronic sensing in bulk resistive materials. Embedded electrode structures address issues in conventional sensors by allowing independent control of sensitive material thickness, area, electric field intensity, and field direction.

Doty, Fred Patrick↗

The Low Pressure Gas Effects On The Potency Of An Electron Beam On Ceramic Fabric Materials For Space Welding

This investigation was undertaken to evaluate if molten metal or electron beam impingement could damage or burn through the fabric of the astronauts Extravehicular Mobility Unit (EMU) during electron beam welding exercises performed in space. An 8 kilovolt electron beam with a current in the neighborhood of 100 milliamps from the Ukrainian space welding "Universal Hand Tool" burned holes in Nextel AF-62 ceramic cloth designed to withstand temperatures up to 1427 C. The burnthrough time was on the order of 8 seconds at standoff distances between UHT and cloth ranging from 6 to 24 inches. At both closer (2") and farther (48") standoff distances the potency of the beam against the cloth declined and the burnthrough time went up significantly. Prior to the test it had been expected that the beam would lay down a static charge on the cloth and be deflected without damaging the cloth. The burnthrough is thought to be an effect of partial transmission of beam power by a stream of positive ions generated by the high voltage electron beam from contaminant gas in the "vacuum" chamber. A rough quantitative theoretical computation appears to substantiate this possibility.

Nunes, Arthur C., Jr.↗

Pressure-induced ferroelectric-like transition creates a polar metal in defect antiperovskites Hg3Te2X2 (X = Cl, Br)

Abstract Ferroelectricity is typically suppressed under hydrostatic compression because the short-range repulsions, which favor the nonpolar phase, increase more rapidly than the long-range interactions, which prefer the ferroelectric phase. Here, based on single-crystal X-ray diffraction and density-functional theory, we provide evidence of a ferroelectric-like transition from phase I 2 1 3 to R 3 induced by pressure in two isostructural defect antiperovskites Hg 3 Te 2 Cl 2 (15.5 GPa) and Hg 3 Te 2 Br 2 (17.5 GPa). First-principles calculations show that this transition is attributed to pressure-induced softening of the infrared phonon mode Γ 4 , similar to the archetypal ferroelectric material BaTiO 3 at ambient pressure. Additionally, we observe a gradual band-gap closing from ~2.5 eV to metallic-like state of Hg 3 Te 2 Br 2 with an unexpectedly stable R 3 phase even after semiconductor-to-metal transition. This study demonstrates the possibility of emergence of polar metal under pressure in this class of materials and establishes the possibility of pressure-induced ferroelectric-like transition in perovskite-related systems.

36 MATERIALS SCIENCE↗

Electronic Structure, Spectroscopy and Correlation Effects in Novel Materials

This project was targeted on electronic structure, spectroscopic studies, and correlation effects in a variety of novel materials of great current interest. Spectroscopies resolved highly in momentum, energy or spatial dimensions are playing a key role in unraveling the nature of the ground state and excitation properties in wide classes of novel materials. The seminal insights thus obtained are of critical importance not only for answering some of the fundamental questions facing condensed matter physics and materials science today, but also for understanding and thus helping to design and develop new materials with desirable properties, which will continue to be the key to the survival of mankind and its energy needs as a technological society long into the future. However, spectroscopies do not provide a direct map of electronic states, but act as a very complex ‘filter’ or ‘mapping’ of the underlying spectrum. This connection between the electronic states and measured spectra—called the ‘matrix element effect’—is in general an extremely complex function of the phase space of the experiment (e.g. energy/polarization of photons in photoemission), presenting both a challenge and an opportunity. So motivated, this project pursued techniques for realistic treatment of electronic spectra of a wide variety of materials, which served as a prelude to formulating and implementing methodologies for making direct connection with various spectroscopies such as ARPES, STS/STM, and inelastic light scattering. Specific systems are topological materials, including 2D ultrathin films beyond graphene, novel superconductors, and nanocrystals, among others. Our goal was to exploit the strengths of various spectroscopies to piece together the most complete picture of electronic states in systems of current interest, enabling direct and sharpened confrontations with theoretical models, and also to help advance the reach of various spectroscopies.

36 MATERIALS SCIENCE↗

One-dimensional edge contact to encapsulated MoS 2 with a superconductor

Establishing ohmic contact to van der Waals semiconductors such as MoS 2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS 2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS 2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.

2D materials↗

Packaging Technology Developed for High-Temperature SiC Sensors and Electronics

A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250 hours at 500 C.

Chen, Liang-Yu↗

Body of Knowledge for Gallium Nitride Power Electronics

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.

Gallium Nitride Power Electronics↗

The Chemical and Electronic Properties of Stability-Enhanced, Mixed Ir-TiO x Oxygen Evolution Reaction Catalysts

Iridium has emerged as the leading catalyst material for the anodic oxygen evolution reaction (OER) in acidic media. Often, iridium is mixed with more stable materials such as titanium. For these materials, the electronic structure of titanium plays a crucial role since with varying degrees of oxidation titanium transforms to semiconducting or even insulating phases. Yet, the electronic properties of mixed Ir-TiO x catalysts have never been systematically studied. In this study, we correlate the catalytic performance of mixed Ir-TiO x -based OER catalysts with the electronic structure of the surface layers. For this, a thin film material library with a 20-70 at. % Ir (Ir/[Ir + Ti]) compositional gradient was prepared. We used inductively coupled plasma mass spectrometry to test the OER activity and stability of the set of mixed Ir-TiO x catalyst candidate materials. Complementary, Ti L 2,3 - and O K-edge X-ray absorption spectroscopy and depth-dependent X-ray photoelectron spectroscopy measurements were performed to correlate the catalytic performance with the composition and electronic property profiles of these mixed Ir-TiO x OER anode catalysts. The spectroscopic analysis reveals that titanium is present as an intermixed matrix of semiconductive but stable TiO 2 , conductive but less stable titanium-suboxides (TiO x ), and highly conductive but highly unstable metallic Ti(0). The extent of the titanium oxidation strongly depends on the titanium content, with a lower degree of oxidation observed for lower titanium (and thus higher iridium) contents. For an iridium loading of 70 at. %, the respective mixed Ir-TiO x catalyst showed a similar OER activity to that of the pure metallic iridium (1.74 vs 1.59 VRHE, respectively) but with a 71% lower iridium dissolution rate relative to the pure metallic iridium. This demonstrates the stabilization effect of titanium addition while maintaining high OER activity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

X-Ray Absorption near Edge Structure Spectroscopic Study of Hayabusa Category 3 Carbonaceous Particles

Analyses with a scanning transmission x-ray microscope (STXM) using x-ray absorption near edge structure (XANES) spectroscopy were applied for the molecular characterization of two kinds of carbonaceous particles of unknown origin, termed category 3, which were collected from the Hayabusa spacecraft sample catcher. Carbon-XANES spectra of the category 3 particles displayed typical spectral patterns of heterogeneous organic macromolecules; peaks corresponding to aromatic/olefinic carbon, heterocyclic nitrogen and/or nitrile, and carboxyl carbon were all detected. Nitrogen-XANES spectra of the particles showed the presence of N-functional groups such as imine, nitrile, aromatic nitrogen, amide, pyrrole, and amine. An oxygen-XANES spectrum of one of the particles showed a ketone group. Differences in carbon- and nitrogen-XANES spectra of the category 3 particles before and after transmission electron microscopic (TEM) observations were observed, which demonstrates that the carbonaceous materials are electron beam sensitive. Calcium-XANES spectroscopy and elemental contrast mapping identified a calcium carbonate grain from one of the category 3 particles. No fluorine-containing molecular species were detected in fluorine-XANES spectra of the particles. The organic macromolecular features of the category 3 particles were distinct from commercial and/or biological ‘fresh (non-degraded)’ polymers, but the category 3 molecular features could possibly reflect degradation of contaminant polymer materials or polymer materials used on the Hayabusa spacecraft. However, an extraterrestrial origin for these materials cannot currently be ruled out.

Asteroides↗

Defects in electro-optically active polymer solids

There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).

Martin, David C.↗

Exciton-Phonon Interaction and Relaxation Times from First Principles

Electron-phonon interactions are key to understanding the dynamics of electrons in materials and can be modeled accurately from first principles. However, when electrons and holes form Coulomb-bound states (excitons), quantifying their interactions and scattering processes with phonons remains an open challenge. Here we show a rigorous approach for computing exciton-phonon (ex-ph) interactions and the associated exciton dynamical processes from first principles. Starting from the ab initio Bethe-Salpeter equation, we derive expressions for the ex-ph matrix elements and relaxation times. Finally, we apply our method to bulk hexagonal boron nitride, for which we map the ex-ph relaxation times as a function of exciton momentum and energy, analyze the temperature and phonon-mode dependence of the ex-ph scattering processes, and accurately predict the phonon-assisted photoluminescence. The approach introduced in this work is general and provides a framework for investigating exciton dynamics in a wide range of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Graphene-Based Filtration Media for Spacecraft Potable Water Systems: An Early Investigation

Graphene-based materials have allowed fundamental advances in fields such as energy storage, electronics development, material science, optics, medicine, and water processing due to its unique two-dimensional structure, mechanical robustness, large surface, and high conductivity. However, little to no effort has been devoted to exploiting and studying these materials to develop new water technologies suited for spacecraft applications. One such application is the potential use of graphene-based materials as filtration media for reclaimed water. Therefore, studying the adsorptive performance of these new materials becomes crucial in identifying the opportunity to replace/upgrade State-of-the-Art filtration media currently used in space vehicles with water-recovery capability; especially if consumable requirements can be lessened as a result of extended filtration capacity. This early life-support-systems investigation pioneers in graphene-research by testing a number of graphene-based materials in comparative adsorption and antimicrobial experiments where contaminant removal efficiency, maximum adsorption capacity, and log reduction are probed. This preliminary investigation informs on the practicability of using graphene-based materials as filtration media and provides a discussion on the scaling-up and optimization of this prospective filtration technology for spacecraft potable water systems.

graphene↗