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At least 523 records · Page 29

Effect of Anisotropic Confinement on Electronic Structure and Dynamics of Band Edge Excitons in Inorganic Perovskite Nanowires

Inorganic lead halide perovskite nanostructures show promise as the active layers in photovoltaics, light emitting diodes, and other optoelectronic devices. They are robust in the presence of oxygen and water, and the electronic structure and dynamics of these nanostructures can be tuned through quantum confinement. Here we create aligned bundles of CsPbBr3 nanowires with widths resulting in quantum confinement of the electronic wave functions and subject them to ultrafast microscopy. We directly image rapid one-dimensional exciton diffusion along the nanowires, and we measure an exciton trap density of roughly one per nanowire. Using transient absorption microscopy, we observe a polarization-dependent splitting of the band edge exciton line, and from the polarized fluorescence of nanowires in solution, we determine that the exciton transition dipole moments are anisotropic in strength. Furthermore, our observations are consistent with a model in which splitting is driven by shape anisotropy in conjunction with long-range exchange.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Rotational relaxation measurements in ozone - Temperature and collision partner effects

Time-resolved infrared double resonance experiments have been conducted on ozone mixtures in order to determine rotational relaxation rates. A pulsed CO2 laser pumps a nu(3)-ground state transition, while a diode laser is tuned to a hot band transition so that the relaxation process in nu(3) = 1 may be observed. Nitrogen, oxygen, rare gas, and self-relaxation rates have been measured, and the temperature dependence of these rates has been investigated over the 200-300 K range.

Flannery, C. C.↗

Electron-Spin Filters Based on the Rashba Effect

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Ting, David Z.-Y.↗

Effects of processing on the carrier lifetime in silicon solar cells

Measurements were taken to determine the effects that solar cell processing steps have on the minority carrier lifetime in silicon. The experimental work included measurements of diffusion lengths of the silicon at various stages of cell fabrication, of solar cell properties, and of the PN junction properties for ingots covering a wide range of doping and other ingot properties. Resistivities covered the range of 0.01 to 10 ohm-cm, and combinations of extreme concentrations (high and low) of dislocations and oxygen were included. The results showed that the major cell process steps did not usually cause any appreciable change in diffusion lengths. The solar cell currents obtained supported the diffusion length measurements. The effects of heavy doping concentrations on solar cell performance were studied. Attempts were made to relate the voltage behavior of the cells with the diode properties and the properties of the ingots.

Iles, P. A.↗

High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

Botez, D.↗

Evaluation of the emission capabilities of Spindt-type field emitting cathodes

The electron emitting capabilities of Spindt-type field emitting cathodes (FEC) are being studied at the Lewis Research Center, NASA. These cathodes, having 5000 emitting points in a 1 mm diameter, have been shown to be capable of emission current densities of 10 A/sq cm and higher. The purposes of this study are to (1) demonstrate that the cathodes can be processed and used in a tube-type configuration, (2) determine whether, at a sufficiently high current density, the cathode can operate in the space charge mode, and (3) evaluate failure mechanisms in this unique type of electron emitter. FEC's have been tested in a diode configuration, by the use of pulse techniques, up to current densities of 6 A/sq cm and anode potentials of 3000 V. Space charge effects have been observed in the range of 5 A/sq cm as an apparent linear increase of cathode current with anode voltage for a constant emitter-gate potential. Failed cathodes were studied by means of scanning electron microscopy and the major failure modes encountered are attributed to gas evolution, followed by arcing, which destroys either individual emitters or a large segment of the cathode area.

Forman, R.↗

Free-space laser communication technologies II; Proceedings of the Meeting, Los Angeles, CA, Jan. 15-17, 1990

Various papers on free-space laser communication technologies are presented. Individual topics addressed include: optical intersatellite link experiment between the earth station and ETS-VI, the Goddard optical communications program, technologies and techniques for lasercom terminal size, weight, and cost reduction, laser beam acquisition and tracking system for ETS-VI laser communication equipment, analog dividers for acquisition and tracking signal normalization, fine pointing mechanism using multilayered piezoelectric actuator for optical ISL system, analysis of SILEX tracking sensor performance, new telescope concept for space communication, telescope considered as a very high gain antenna, design of compact transceiver optical systems for optical intersatellite links, ultralightweight optics for laser communications, highly sensitive measurement method for stray light and retroreflected light, depolarization effects on free space laser transceiver communication systems, in-orbit measurements of microaccelerations of ESA's communication satellite Olympus, high-performance laser diode transmitter for optical free space communication, diode-pumped Nd:host laser transmitter for intersatellite optical communications, single-frequency diode-pumped laser for free-space communication.

Begley, David L.↗

On the modeling and optimization of Schottky varactor frequency multipliers at submillimeter wavelengths

Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.

TRT-THEORETICAL↗

Recycling the Energy of Indoor Light: Highly Efficient Organic Photovoltaics via a Ternary Strategy

A ternary approach in organic photovoltaics (OPV) is simple and reliable to effectively tune the optical, electrical and morphological properties of the photoactive layer for high efficiency as well as long-term stability under 1 sun. However, there have been few papers reporting spectra and weak illumination compared to outdoor light. In this study, by using two compatible 16 structures, we demonstrate a simultaneous modulation of light absorption and molecular donor polymers (PM7 and PM7 D1) with slightly-different band gaps and similar chemical packing under ambient conditions, which resulted in efficient indoor OPVs exhibiting power conversion efficiency (PCE) over 20% under 1000 lux of warm white light-emitting diode (2900 K). From morphological analysis, we infer that PM7 serves to seed nucleation of PM7 D1 in the ternary blend, templating its crystallization and alignment along the PM7 backbone. Such templating effect leads to increased domain spacing and relative degree of crystallinity (rDoC) compared to those of each binary system. We further show that higher rDoC helps suppress both bimolecular and trap-assisted recombination of photogenerated charges in the ternary devices. As a result, the complementary absorption and synergistic molecular assembly of the two donor polymers enhance the short-circuit current density as to increase the average PCEs from 9.6 to 10.3% under 1 sun and from 18.7 to 20.0% under 1000 lux. We envision that our strategy of incorporating both a planar and a flexible donor polymer with similar chemical structures can be generally applicable to attain a high performance ternary OPV under both 1 sun and indoor light.

14 SOLAR ENERGY↗

Impact of doped barriers on the recombination coefficients of c -plane InGaN/GaN single quantum well light-emitting diodes

Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.

42 ENGINEERING↗

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

A high-performance metamorphic Al 0.2 Ga 0.8 As 0.75 P 0.25 /GaAs 0.75 P 0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs 0.75 P 0.25 /Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes non-abrupt doping profiles in the Te doped layer. Furthermore, these efforts resulted in a fully-relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density (JP) of 279.1 A·cm –2 and a zero-bias resistance area product (RA) of 3.0×10 –4 Ω·cm 2 . After post-growth annealing to emulate the thermal load of the GaAs 0.75 P 0.25 top cell growth and elimination of the performance enhancing carbon activation anneal, the device achieved JP = 13.1 A·cm –2 and RA = 1.5×10 –3 Ω·cm 2 . These worst-case values are very promising as they enable the operation of GaAs 0.75 P 0.25 /Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss.

14 SOLAR ENERGY↗

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗

Diode laser saturation spectroscopy of NH3

Saturation of molecular transitions using a tuneable diode laser was demonstrated for the first time using a standing-wave cavity configuration with an f/8 beam focussed at the sample. Observed saturation effects in NH3 transitions near 888/cm include sub-Doppler (Lamb-dip) resonances at line center.

Jennings, D. E.↗

Chirped arrays of diode lasers for supermode control

Nonuniform structures of phase-locked diode lasers, which make it possible to discriminate efficiently against all the higher order array supermodes (lateral modes) are proposed. In these nonuniform arrays, the effective mode index in each channel varies across the array. Consequently, the envelopes of the various supermodes, including the highest order one, differ significantly from each other. Thus, by proper tailoring of the gain distribution across the array, one can conveniently select the fundamental supermode. Such fundamental supermode oscillation is essential in order to obtain single lobe, diffraction limited beams and minimal spectal spread from phase-locked laser arrays.

Kapon, E.↗

Power supply conditioning circuit

A conditioning circuit is provided with a constant current diode in series with a zener diode, the former having a high dynamic impedance and the latter a low dynamic impedance. The constant current diode can receive an input voltage with PARD. In conjunction with the zener diode fixed to a ground, a voltage divider is provided which can give an output voltage whose PARD was significantly reduced. The conditioning circuit is effective down to dc.

Primas, Lori E.↗

Investigation of stimulated Brillouin scattering switching in mid infrared fibers

Backward stimulated Brillouin scattering (SBS) has been experimentally studied in midinfrared transparent AgCl and KRS-5 fibers. In the present scheme, pump transmission through the fibers and acoustooptic radiative effects are simultaneously observed. The SBS shifted scattered light spectrum is investigated by laser heterodyne spectroscopy using HgCdTe and very fast metal-oxide-metal diode broadband mixers. The results suggest that reflection under high incident laser power departs from simple Fresnel surface reflection.

Yu, Chung↗

Thermoelectric Devices Cool, Power Electronics

Nextreme Thermal Solutions Inc., based in Research Triangle Park, North Carolina, licensed thermoelectric technology from NASA s Jet Propulsion Laboratory. This has allowed the company to develop cutting edge, thin-film thermoelectric coolers that effective remove heat generated by increasingly powerful and tightly packed microchip components. These solid-state coolers are ideal solutions for applications like microprocessors, laser diodes, LEDs, and even potentially for cooling the human body. Nextreme s NASA technology has also enabled the invention of thermoelectric generators capable of powering technologies like medical implants and wireless sensor networks.

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