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At least 523 records · Page 29

Improved Process for Fabricating Carbon Nanotube Probes

An improved process has been developed for the efficient fabrication of carbon nanotube probes for use in atomic-force microscopes (AFMs) and nanomanipulators. Relative to prior nanotube tip production processes, this process offers advantages in alignment of the nanotube on the cantilever and stability of the nanotube's attachment. A procedure has also been developed at Ames that effectively sharpens the multiwalled nanotube, which improves the resolution of the multiwalled nanotube probes and, combined with the greater stability of multiwalled nanotube probes, increases the effective resolution of these probes, making them comparable in resolution to single-walled carbon nanotube probes. The robust attachment derived from this improved fabrication method and the natural strength and resiliency of the nanotube itself produces an AFM probe with an extremely long imaging lifetime. In a longevity test, a nanotube tip imaged a silicon nitride surface for 15 hours without measurable loss of resolution. In contrast, the resolution of conventional silicon probes noticeably begins to degrade within minutes. These carbon nanotube probes have many possible applications in the semiconductor industry, particularly as devices are approaching the nanometer scale and new atomic layer deposition techniques necessitate a higher resolution characterization technique. Previously at Ames, the use of nanotube probes has been demonstrated for imaging photoresist patterns with high aspect ratio. In addition, these tips have been used to analyze Mars simulant dust grains, extremophile protein crystals, and DNA structure.

Stevens, R.↗

Ground Testing of the MISSE-16 Materials

The harsh space environment imposes very stringent requirements upon spacecraft materials, especially those located on exterior surfaces of space objects in low Earth orbit (LEO). As humankind moves from space exploration to space commercialization, these materials may have to last for 15–20 years without considerable degradation of their optical, electrical, mechanical, and thermal properties. Operational requirements dictate that these materials continue to function according to expectations. Hence, we must understand the effects of the space environment on materials currently in use as well as on untested materials. For the years, the Materials International Space Station Experiment Flight Facility (MISSE-FF) have flown many different materials to investigate the effect of LEO space weather exposure on the performance and durability of materials and devices. The MISSE-16 scientific team members plan to launch fifteen different novel and well-characterized spacecraft-relevant materials to the LEO environment for a duration of six months during the MISSE-16 mission. Changes in spectral reflectivity will be measured throughout the mission as the samples are exposed to the space environment. The same chemical damage the produces changes in optical reflectance also causes changes in numerous other physical properties such as electrical conductivity, mechanical strength, and chemical reactivity. Correlation of the changes in each of these properties as a function of radiation type, flux, and fluence allows various material properties to be inferred from one experimentally tractable measurement: color change. Flying identical test fixtures on the ram, zenith, and wake positions of the MISSE-FF, collecting spectrally resolved images of the materials, and concomitantly measuring the ambient space environment allows deconvolution of the material effects which occur as a result of exposure to neutral atomic oxygen (AO), unfiltered solar ultraviolet (UV) radiation, and electrons. The flight experiment will function as a ground truth reference for our team’s ongoing laboratory-based space weather-material interactions experiments. Comparison of the MISSE-16 data with extensive testing of “flight-duplicate” samples under simulated space weather conditions will enable development of chemical models for prediction of material degradation. This paper discusses preliminary results from the ground test campaign including measurements of UV/VIS/IR reflectance spectra, bidirectional reflectance distribution function (BRDF), surface potential decay, and surface morphology under electron and AO exposure.

Elena A. Plis↗

Investigation of the Stability and 1.0 MeV Proton Radiation Resistance of Commercially Produced Hydrogenated Amorphous Silicon Alloy Solar Cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below 1E14 sq cm fluences above 1E14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed In dark I-V measurements. The current mechanism were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗

EdgeCortix SAKURA-I Machine-Learning, PCIe Accelerator SEE Heavy Ion Test Report

To enable autonomy in space, machine-learning and computer vision applications become invaluable for sensor processing. However, these algorithms are computationally complex and unfeasible for many embedded central processing units (CPUs) and usually require external coprocessors, such as graphics processing units (GPUs) or accelerators specific to the application, including application specific integrated circuits (ASICs). In power-constrained systems, GPUs tend to consume more power than is acceptable (>40W), so lower-power accelerators have shown promise to provide the performance needed under spacecraft constraints. For radiation engineers, developing methodologies that can properly test CPUs, GPUs, and accelerators, and enable comparisons between them remains a necessary complication to solve as the devices become more complex. The methodology in this test aims to be a start in developing a baseline single-event effect (SEE) test for client-device machine learning accelerators. This category of devices do not host their own operating system. This testing campaign is a continuation of a previous 200 MeV proton test performed in January 2024. This report covers two heavy ion tests of the SAKURA-I card: one in April 2024, and one in June 2024. Additional data was needed after the April test due to ion-range issues experienced at higher linear-energy transfers (LETs). These range issues are described in more detail in Section 8. This experiment characterizes SEEs and data error susceptibility of the EdgeCortix SAKURA-I machine-learning accelerator under heavy ions. The device was monitored for single event upsets (SEUs) and single event functional interrupts (SEFIs) at the Lawrence Berkeley National Laboratory’s 88-inch cyclotron. The SAKURA-I board accelerates machine-learning inference applications on a host computer through a PCIex16 connection. For the purposes of devising an end to end automated analysis workflow for this experiment, the YOLO-V5 and SSD300 objection-detection models, and the ResNet-50, EfficientNet, and MobileNetV2 image classification models were used as a representative suite of analytical machine-learning models.

Seth S Roffe↗

Characterization of Carbon Nanotubes Grown by Chemical Vapor Deposition

Since the superior properties of multi-wall carbon nanotubes (MWCNT) could improve numerous devices such as electronics and sensors, many efforts have been made in investigating the growth mechanism of MWCNT to synthesize high quality MWCNT. Chemical vapor deposition (CVD) is widely used for MWCNT synthesis, and scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) are useful methods for analyzing the structure, morphology and composition of MWCNT. Temperature and pressure are two important growth parameters for fabricating carbon nanotubes. In MWCNT growth by CVD, the plasma assisted method is normally used for low temperature growth. However a high temperature environment is required for thermal CVD. A systematic study of temperature and pressure-dependence is very helpful to understanding MWCNT growth. Transition metal particles are commonly used as catalysis in carbon nanotube growth. It is also interesting to know how temperature and pressure affect the interface of carbon species and catalyst particles

Cochrane, J. C.↗

High-efficiency heteroepitaxial InP solar cells

High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet reported for InP heteroepitaxial cells. Approaches for further improving the cell performance are discussed.

Wanlass, M. W.↗

Development of lead salt semiconductor lasers for the 9-17 micron spectral region

Improved diode lasers of Pb sub 1-x Sn sub x Se operating in the 9-17 micrometers spectral region were developed. The performance characteristics of the best lasers exceeded the contract goals of 500 microW/mode at T 30K in the 9-12 micrometers region and 200 microW/mode at T 18K in the 16-17 micrometers region. Increased reliability and device yields resulted from processing improvements which evolved from a series of diagnostic studies. By means of Auger electron spectroscopy, laser shelf storage degradation was shown to be characterized by the presence of In metal on the semiconductor crystal surfaces. Studies of various metal barrier layers between the crystals and the In metal led to the development of an improved metallurgical contacting technology which has resulted in devices with performance stability values exceeding the contract goal of a one year shelf life. Lasers cycled over 500 times between 300K and 77K were also shown to be stable. Studies on improved methods of fabricating striped geometry lasers indicated that good spectral mode characteristics resulted from lasers which stripe widths of 12 and 25 micrometers.

Linden, K. J.↗

A Computationally-Efficient, Multi-Mechanism Based Framework for the Comprehensive Modeling of the Evolutionary Behavior of Shape Memory Alloys

The report summarizes the accomplishments made during the 4-year duration of the project. Here, the major emphasis is placed on the different tasks performed by the two research teams; i.e., the modeling activities by the University of Akron (UA) team and the experimental and neutron diffraction studies conducted by the University of Central Florida (UCF) team, during this 4-year period. Further technical details are given in the upcoming sections by UA and UCF for each of the milestones/years (together with the corresponding figures and captions).The project majorly involved the development, validation, and application of a general theoretical model that is capable of capturing the nonlinear hysteretic responses, including pseudoelasticity, shape memory effect, rate-dependency, multi-axiality, asymmetry in tension versus compression response of shape memory alloys. Among the targeted goals for the SMA model was its ability to account for the evolutionary character response (including transient and long term behavior under sustained cycles) for both conventional and high temperature (HT) SMAs, as well as being able to simulate some of the devices which exploit these unique material systems. This required extensive (uniaxial and multi-axial) experiments needed to guide us in calibrating and characterizing the model. Moreover, since the model is formulated on the theoretical notion of internal state variables (ISVs), neutron diffraction experiments were needed to establish the linkage between the micromechanical changes and these ISVs. In addition, the design of the model should allow easy implementation in large scale finite element application to study the behavior of devices making use of these SMA materials under different loading controls. Summary of the activities, progress/achievements made during this period is given below in details for the University of Akron and the University (Section 2.0) of Central Florida (Section 3.0).

Alloys↗

Development and Characterization of Laser-Induced Incandescence Towards Nanoparticle (Soot) Detection

The production of particulates, notably soot, during combustion has both positive and negative ramifications. Exhaust from diesel engines under load (for example, shifting gears), flickering candle flames and fireplaces all produce soot leaving a flame. From an efficiency standpoint, emission of soot from engines, furnaces or even a simple flickering candle flame represents a loss of useful energy. The emission of soot from diesel engines, furnaces, power generation facilities, incinerators and even simple flames poses a serious environmental problem and health risk. Yet some industries intentionally produce soot as carbon black for use in inks, copier toner, tires and as pigments. Similarly, the presence of soot within flames can act both positively and negatively. Energy transfer from a combustion process is greatly facilitated by the radiative heat transfer from soot yet radiative heat transfer also facilitates the spread of unwanted fires. To understand soot formation and develop control strategies for soot emission/formation, measurements of soot concentration in both practical devices such as engines and controlled laboratory flames are necessary. Laser-induced incandescence (LII) has been developed and characterized to address this need, as described here.

VanderWal, Randy L.↗

Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations

The electrical and metallurgical behavior of the Ag-InP contact system has been investigated. Specific contact resistivity (Rc) values in the low 10 exp -6 Ohm sq cm range are readily achieved on n-InP (Si: 1.7 x 10 exp 18/cu cm) after sintering at 400 C for several minutes. The low Rc values, however, are shown to be accompanied by dissolution of InP into the metallization, resulting in device degradation. An analysis of the sinter-induced metallurgical interactions shows this system to be similar to the well-characterized Au-InP system, albeit with fundamental differences. The similarities include the dissociative diffusion of In, the reaction-suppressing effect of SiO2 capping, and especially, the formation of a phosphide layer at the metal-InP interface. The low post-sinter Rc values in the Ag-InP system may be due to the presence of a AgP2 layer at the metal-InP interface; low values of Rc can be achieved without incurring device degrading metallurgical interactions by introducing a thin AgP2 layer between the InP and the current carrying metallization.

Weizer, Victor G.↗

Importance and Definition of Materials in Tribology. Status of Understanding

In general, tribological systems consist of three basic components: the material surfaces in contact, the lubricant, and the environment. The materials in contact and the influence of both bulk and surface properties, indicating the importance of material characterization, on tribological behavior are addressed. Since metals and metallic alloys are the most widely used class of materials in practical devices, attention is focused principally on them. With respect to surface behavior, the effect of contaminants both from within the material and from the environment on adhesive behavior is addressed. The various surface events that alter adhesion, friction, and wear are discussed. These include surface reconstruction, segregation, chemisorption, and compound formation. Examples of these events are presented. Minor nuances in the structure of the outermost layers of solids have a pronounced effect on tribological properties. The importance of characterizing the materials of solids in contact in order to achieve a fundamental understanding of adhesion, friction, and wear and accordingly of methods for their control are addressed.

Buckley, D. H.↗

Space processing of crystalline materials: A study of known methods of electrical characterization of semiconductors

A literature survey is presented covering nondestructive methods of electrical characterization of semiconductors. A synopsis of each technique deals with the applicability of the techniques to various device parameters and to potential in-flight use before, during, and after growth experiments on space flights. It is concluded that the very recent surge in the commercial production of large scale integrated circuitry and other semiconductor arrays requiring uniformity on the scale of a few microns, involves nondestructive test procedures which could well be useful to NASA for in-flight use in space processing.

Castle, J. G.↗

Predicted and measured effects of pressure and crossflow velocity on composite propellant burning rate

A theoretical model for prediction of burning rates of composite (ammonium perchlorate oxidizer) solid propellants as a function of pressure and crossflow velocity was developed. Included in this model is the capability for treatment of multimodal oxidizer particle sizes and metalized formulations. In addition, an experimental device for measuring the effects of crossflow velocity on propellant burning rate was developed and used to characterize a series of AP/HTPB propellants with systematically varied formulation parameters. Model predictions of zero-crossflow burning rate versus pressure characteristics were found to be in agreement with data, while the agreement between erosive burning predictions and data is, in general, good. The experimental data indicate that the dominant factor influencing the sensitivity of composite propellant burning rate to crossflow is the base (no-crossflow) burning rate versus pressure characteristics of the propellant (lower base burning rate leading to increased crossflow sensitivity). Finally, the model was used to examine the effects of motor scaling on erosive burning: erosive burning is predicted to diminish with increasing motor size, in agreement with experience.

King, M. K.↗

Induction Charge Detector with Multiple Sensing Stages

An induction charge detector with multiple sensing stages has been conceived for use in characterizing sprayed droplets, dust particles, large ionized molecules, and the like. Like related prior single-stage devices, each stage yields a measurement of the electric charge and the time of flight of the particle. In effect, an n-stage sensor yields n independent sets of such measurements from the same particle. The benefit of doing this is to increase the effective signal-to-noise ratio and thereby lower the charge-detection limit and the standard error of the charge measurement.

Gamero-Castano, Manuel↗

Technology Assessment and Modelling of Three Terminal Tandem Solar Cells for In-Space Utilization

NASA seeks a sustained human presence on the lunar surface. High-efficiency and resilient energy systems are critical to supporting habitats, scientific outposts, and lunar surface operations. Photovoltaics have long been the backbone of space power systems, transitioning from silicon solar cells to multi-junction III-V solar cells, which now dominate state-of-the-art (SOA) technology. Multi-junction cells achieve high efficiency by layering semiconductors, each absorbing a specific portion of the solar spectrum. However, efficiency gains are increasingly constrained by device physics and manufacturing complexity. Additionally, higher-order junctions pose challenges for accurate modelling and performance characterization due to difficulties in replicating the AM0 spectrum.

solar cells↗

W-band six-port network analyzer for two-port characterization of millimeter wave transistors

A W-band (75-100 GHz) six-port junction network analyzer was constructed from commercially available descrete waveguide components and was used for the direct two-port S-parameter measurement of active three-terminal devices. A comparison between the six-port and a down-converter-type frequency extender for a conventional network analyzer revealed the superior performance of the six-port. The application of the six-port to characterize a 0.1-micron gate-length HEMT at W-band is described, and representative results are presented.

Moeller, Karl J.↗

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

EPITAXIAL LAYER↗