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At least 523 records · Page 29

Modeling of Powder Bed Manufacturing Defects

Powder bed additive manufacturing offers unmatched capabilities. The deposition resolution achieved is extremely high enabling the production of innovative functional products and materials. Achieving the desired final quality is, however, hampered by many potential defects that have to be managed in due course of the manufacturing process. Defects observed in products manufactured via powder bed fusion have been studied experimentally. In this effort we have relied on experiments reported in the literature and—when experimental data were not sufficient—we have performed additional experiments providing an extended foundation for defect analysis. There is large interest in reducing the effort and cost of additive manufacturing process qualification and certification using integrated computational material engineering. A prerequisite is, however, that numerical methods can indeed capture defects. A multiscale multiphysics platform is developed and applied to predict and explain the origin of several defects that have been observed experimentally during laser-based powder bed fusion processes. The models utilized are briefly introduced. The ability of the models to capture the observed defects is verified. The root cause of the defects is explained by analyzing the numerical results thus confirming the ability of numerical methods to provide a foundation for rapid process qualification.

36 MATERIALS SCIENCE↗

Self-diffusion of Ti interstitial based point defects and complexes in TiC

To date, the mechanism of Ti atom self-diffusion is unproven. Prior theoretical work mostly focused on Ti vacancy based mediators, but these do not reproduce the experimental activation energy or entropy. In this work, in density functional theory calculations, Ti interstitials and related defect complexes are systematically considered as possible mediators of Ti self-diffusion. Among these defects, the defect complex of two C vacancies tightly bound to a Ti dumbbell is found to have the lowest formation energy. A sustainable migration of the complex, in a translational or rotational fashion, is enabled in the presence of another (free) carbon vacancy nearby the complex, and thus the rate of Ti self-diffusion by this mechanism is dependent on the concentration of carbon vacancies. The calculated activation energy of the complex agrees well with the experimental value in TiC 0.97 . Similar analyses of the Ti self-diffusion mechanisms mediated by Ti interstitials or dumbbells yield much higher activation energies, but the corresponding migration energies are evaluated to be less than 1 eV, which suggests they can be possible mediators of the radiation-enhanced Ti self-diffusion in TiC. To fully enable the comparison with experiments that are typically conducted at temperatures as high as 2500 K, we also consider the temperature dependent vibrational contribution to the activation energy of the defect complex. The vibrational contribution imposes an additive effect on the defect formation energy, while the migration energies are lowered due to the thermal expansion of the lattice. When combined, these factors give an excellent agreement with the experiments. Furthermore, this work gives strong support to the concept that Ti interstitial based defect complexes are likely diffusion mediators for Ti atom self-diffusion in TiC, further establishes a solid basis for large-scale modeling, and may eventually pave the way to accurately predicting defect-controlled diffusional processes.

36 MATERIALS SCIENCE↗

Extended defects-enhanced oxygen diffusion in ThO 2

Oxygen self-diffusion is key to understanding stoichiometry and defect structures in oxide nuclear fuels. Experimentally, low activation-barrier oxygen migration was found in ThO 2 , a candidate nuclear fuel, possibly due to short-circuit diffusion mechanisms. Here, we perform extensive molecular dynamics simulations to show that various types of extended defects can enhance oxygen self-diffusion with a much-reduced activation barrier in ThO 2 . In this work, we consider extended defects including 1D (dislocation), 2D (grain boundary), and 3D (void) defects. Due to the distinct characteristics of each type of extended defect, the modulation of oxygen diffusion varies. Further, these results provide a quantitative description of oxygen transport, which is significantly enhanced within a close distance (nanometer scale) from the extended defects. Among all these considered defects, grain boundary, particularly the low-energy $Σ$3 twin boundary, exhibits the strongest effect on increasing oxygen transport.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Revisiting point defect thermodynamics in group IVB and VB transition metal carbides

We present a comprehensive re-examination of point defect thermodynamics in group IVB and VB transition metal carbides (TMCs) with the rocksalt structure using a combination of density functional theory (DFT) calculations and a statistical mechanical Wagner-Schottky model within the canonical ensemble. The most stable configurations of point defects were discovered using basin-hopping global optimization, driven by either a machine learning interatomic potential (MLIP) or DFT. A key finding is the identification of previously unreported dicarbon antisites—a C–C dimer occupying a metal site—as the structural (constitutional) defects on the carbon-rich side of stoichiometry in all group IVB and VB TMCs except TaC. Furthermore, dicarbon antisite-containing thermal defect complexes, such as quadruple and interbranch defects, can dominate in TMCs under specific stoichiometric and temperature conditions. In conclusion, by incorporating dicarbon antisites into the defect landscape, this work provides a revised understanding of the thermodynamics of point defects in TMCs.

Carbides↗

Investigation of intrinsic and extrinsic defects effective role on producing intense red emission in ZnO:Eu nanostructures

Highlights: • Effective role of defects on producing red emission at indirect excitation. • V{sub Zn} and V{sub O} defects have important role on energy transfer. • Mg related defects and Zn{sub i} defects were responsible for blue emission. • Extrinsic and intrinsic defects mediated energy transfer to sensitize Eu{sup 3+} ions. • Decrease of red emission because of diminishing in oxygen vacancy. - Abstract: Europium doped ZnO nanorads and nanosheets were synthesized by hydrothermal method. Effects of Mg doping, morphology and annealing in oxygen ambient on structural and optical properties of ZnO nanostructures were investigated using X-ray diffraction (XRD), particle size analysis (PSA), thermo gravimetric analysis (TGA), differential thermal analysis (DTA), differential thermo gravimetry (DTG), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL). This study recommends that both of intrinsic and extrinsic defects facilitate energy transfer (ET) from the ZnO host to Eu{sup 3+} ions and consequently have efficient role on producing intense red emission at indirect excitation. The results also showed that annealing process improved the crystal structure of ZnO nanosheets due to decrease of surface defects; however decreased ET and red emission because of diminishing in oxygen vacancy. In addition in ZnO nanorods sample with more surface area in comparison with ZnO nanosheets sample deep level emissions are enhanced.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Magnetic transition and defect characteristics of multiferroic CuFe1-xGaxO2 studied by positron annihilation spectra

Highlights: • A systematic investigation of the effect of Ga doping on the structural and magnetic properties of CuFeO{sub 2}. • Crystal defects are determined by positron annihilation spectroscopy. • There is a good correlation between antiferromagnetic stability and lattice distortion. • Crystal defects and interlayer ions in polycrystalline samples influence the magnetic properties. - Abstract: The structure, crystal defects and magnetic properties of multiferroic CuFe{sub 1-x}Ga{sub x}O{sub 2} (CFGO; x = 0–0.07) ceramics are studied systemically. Substitution of Ga{sup 3+} for Fe{sup 3+} shrinks the CFO lattice, decreases the particle size, and causes small liquid phase formation. Positron annihilation spectroscopy demonstrates that all samples contain a considerable number of vacancy defects. The overall defect environment is virtually unaffected by Ga{sup 3+} doping, but the open-volume of the defects is redistributed. Magnetic susceptibility measurements show that Ga doping enhances the strength of the antiferromagnetic interaction between high-spin Fe{sup 3+} ions as a result of reduced magnetic correlation length, but decrease the stability of the antiferromagnetic phase. The antiferromagnetic transition temperature, T{sub N2}, decreases from 11 K for x = 0 to 8 K for x = 0.07, and this destabilization of the antiferromagnetic phase is closely related to the crystal structure and defects, which are discussed in detail in this work.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Relationship between manufacturing defects and fatigue properties of additive manufactured austenitic stainless steel

Tensile properties, fatigue crack initiation, fatigue crack growth rate, and fatigue life are evaluated in 304L austenitic stainless steel fabricated by directed energy deposition (DED). Large lack of fusion (LoF) defects (often >1 mm in length) significantly reduce ultimate tensile strength and ductility, as well as accelerate fatigue crack initiation and reduce fatigue life. In comparison, small spherical defects (<100 μm in diameter) have less effect on tensile and fatigue properties. Fatigue crack growth rate is less severely affected by defects than other properties, showing only local acceleration in the proximity of LoF defects. Therefore, shorter fatigue life is attributed to the role of LoF defects on facilitating fatigue crack initiation and to a lesser extent fatigue crack propagation. Additionally, the fatigue life can be normalized for defects by considering their effect on ultimate tensile strength, suggesting that in the limit of low defect population, the fatigue strength of additively manufactured stainless steel is similar to conventional wrought materials.

36 MATERIALS SCIENCE↗

Unraveling small-scale defects in irradiated ThO 2 using kinetic Monte Carlo simulations

Point defects and their clusters generated through irradiation can have significant impact on the physical and mechanical properties of materials. However, direct experimental visualization of these small-scale defects using high-resolution scanning transmission electron microscopy remains a challenging task. In this study, using thorium dioxide (ThO 2 ) with the fluorite structure as a model system, we demonstrate the use of ab initio basin-hopping simulations in synergy with object kinetic Monte Carlo simulations as a powerful tool for identifying small defect complexes in irradiated materials. In addition to providing quantitative insights into defect evolution in ThO 2 under irradiation, our study reveals an unexpected role of bound anti-Schottky defect clusters in mediating defect transport. Remarkably, despite their poor thermal stability against dissociation at high temperatures, the transient formation of bound anti-Schottky defects under irradiation and their subsequent migration provide the dominant mechanism for the growth of large interstitial loops that have been experimentally observed in ThO 2 .

36 MATERIALS SCIENCE↗

Toward Quality Control in Perovskite Solar Cell Fabrication: Spot-Like Processing Defects Disrupt Charge Transport Layers and Promote Ag Metal Electrode Intrusion

Metal halide perovskite (MHP) photovoltaics provide high efficiencies with less stringent processing requirements than traditional photovoltaic materials. However, processing related defects must be suppressed as they can lead to decreases in initial device efficiency and potentially compromise long-term device operation. In this work we investigate morphological defects in MHP devices using luminescence imaging followed by in-depth structural and composition analysis using electron microscopy-based methods. We identify several different classes of spot-like processing-related defects and observe that a single device structure may contain multiple types of these defects. The presence of these defects in devices with different layer structures and absorber chemistries makes them relevant to the perovskite photovoltaic community as a whole. The defects are associated with voids in the perovskite layer, inclusions (glass, migrated Ag, dust), thickness variations, hole transport layer disruption with anomalous crystal growth, and electron transport layer disruptions that could allow Ag intrusion and lead to local shunts. As perovskite photovoltaic technology matures, mitigation of such defects is critical to improving not only initial performance but also the long-term stability required for industrial applications.

14 SOLAR ENERGY↗

Strain-Induced Shifts in Defective Graphite Phonon Modes Predicted by Density Functional Theory

Carbon fiber composites have gained attention as a structural material because of their high strength-to-weight ratio, and understanding the effect of defects on reactivity and mechanical properties is important for the longevity and safety of the composite. Although it is known that strain causes the underlying graphitic vibrational modes to redshift, it is not clear how strain may alter reactivity and defect-induced vibrational changes. To investigate the strain-induced phonon changes of defective carbon fiber composites, density functional theory calculations of graphite are used, including intercalated hydrogen and fluorine defects. By comparing changes in the bond lengths, formation energies, and phonon density of states for uniaxially and biaxially strained graphite, strain was found to generally make defect formation more favorable and the specific behavior changes are dependent on the strain direction and defect identity. Specifically, intercalated fluorine phonons are more sensitive to strain than hydrogen intercalation phonons, and strain applied along the zigzag direction alters the calculated properties more than strain along the armchair direction. Finally, these results highlight the importance of understanding the microstructural effect of deviations from the ideal material because small changes in strain or defect type can significantly alter the behavior of the carbon fiber composite core.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Defect Properties, Anion Ordering, and Photochromic Mechanism in Yttrium Oxyhydride

Yttrium oxyhydride (YHO) undergoes a reversible photochromic transition when exposed to ultraviolet light. However, the mechanism for this transformation is not fully understood, and the structure and precise chemical composition of YHO remain under debate. Here, we use first-principles density functional theory calculations with a hybrid functional to study the structure, chemical stability, and point defect properties of YHO. As experiments have shown, we find that YHO prefers a cubic structure, with H and O anions present in equal concentrations and located on tetrahedral sites. Stoichiometric and ordered YHO is chemically stable, but it has a wide band gap of 5.01 eV, considerably larger than that measured in experiments (2.4–3.8 eV). On the other hand, Y4H10O has a smaller band gap of 2.97 eV and also has a region of chemical stability; thus, the actual material may include some fraction of this H-rich structure. The defect chemistry of YHO is dominated by anionic antisite species (H O and O H ), with hydrogen interstitials (H i ) and vacancies (V H ) also present in reasonably high concentrations. We show that antisite disorder lowers the band gap relative to the perfectly ordered structure, bringing the magnitude of the gap into closer agreement with experiment. Based on our calculations of defect migration and the positions of defect states relative to the band edges, we link the onset of photochromic behavior to the reaction H O – → V O 0 + H i – , which follows photoexcitation of a H O + defect. H i – can subsequently migrate away and be trapped by additional H O + defects, contributing to the persistence of the reaction, while the resultant oxygen vacancy, V O 0 , introduces an occupied defect state that leads to optical absorption at visible wavelengths. Our results can explain reported discrepancies between experimental and computational results for YHO, and they allow us to propose specific atomic-scale processes that can lead to photochromism. In conclusion, understanding these mechanisms is key for unlocking YHO’s application in devices ranging from smart windows and optoelectronics to electrochemical synapses for neural networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Understanding kinetics of defect annihilation in chemoepitaxy-directed self-assembly.

Directed self-assembly (DSA) of block copolymers (BCP) has attracted considerable interest from the semiconductor industry because it can achieve semiconductor-relevant structures with a relatively simple process and low cost. However, the self-assembling structures can become kinetically trapped into defective states, which greatly impedes the implementation of DSA in high-volume manufacturing. Understanding the kinetics of defect annihilation is crucial to optimizing the process and eventually eliminating defects in DSA. Such kinetic experiments, however, are not commonly available in academic laboratories. To address this challenge, we perform a kinetic study of chemoepitaxy DSA in a 300 mm wafer fab, where the complete defectivity information at various annealing conditions can be readily captured. Through extensive statistical analysis, we reveal the statistical model of defect annihilation in DSA for the first time. The annihilation kinetics can be well described by a power law model, indicating that all dislocations can be removed by sufficiently long annealing time. We further develop image analysis algorithms to analyze the distribution of dislocation size and configurations and discover that the distribution stays relatively constant over time. The defect distribution is determined by the role of the guiding stripe, which is found to stabilize the defects. Although this study is based on polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA), we anticipate that these findings can be readily applied to other BCP platforms as well.

block copolymer↗

Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics

Layered van der Waals heterostructures provide extraordinary opportunities for applications such as thermoelectrics and allow for tunability of optical and electronic properties. The performance of devices made from these heterostructures will depend on their properties, which are sensitive to the nanoarchitecture (constituent layer thicknesses, layer sequence, etc.). However, performance will also be impacted by defects, which will vary in concentration and identity with the nanoarchitecture and preparation conditions. Here, we identify several types of defects and propose mechanisms for their formation, focusing on compounds in the ([SnSe] 1+δ ) m (TiSe 2 ) n system prepared using the modulated elemental reactants method. The defects were observed by atomic resolution high-angle annular dark-field scanning transmission electron microscopy and can be broadly categorized into those that form domain boundaries as a result of rotational disorder from the self-assembly process and those that are layer-thickness-related and result from local or global deviations in the amount of material deposited. Furthermore, defect type and density were found to depend on the nanoarchitecture of the heterostructure. Categorizing the defects provides insights into defect formation in these van der Waals layered heterostructures and suggests strategies for controlling their concentrations. Strategies for controlling defect type and concentration are proposed, which would have implications for transport properties for applications in thermoelectrics.

36 MATERIALS SCIENCE↗

Solvent- and Wavelength-Dependent Photoluminescence Relaxation Dynamics of Carbon Nanotube sp 3 Defect States

Photoluminescent sp 3 defect states introduced to single wall carbon nanotubes (SWCNTs) through low-level covalent functionalization create new photophysical behaviors and functionality as a result of defect sites acting as exciton traps. Evaluation of relaxation dynamics in varying dielectric environments can aid in advancing a more complete description of defect-state relaxation pathways and electronic structure. For this study, we exploit helical wrapping polymers as a route to suspending (6,5) SWCNTs covalently functionalized with 4-methoxybenzene in solvent systems including H 2 O, D 2 O, methanol, dimethylformamide, tetrahydrofuran, and toluene, spanning a range of dielectric constants from 80 to 3. Defect-state photoluminescence decays were measured as a function of emission wavelength and solvent environment. Emission decays are biexponential, with short lifetime components on the order of 65 ps and long components ranging from around 100 to 350 ps. Both short and long decay components increase as emission wavelength increases, while only the long lifetime component shows a solvent dependence. We demonstrate that the wavelength dependence is a consequence of thermal detrapping of defect-state excitons to produce mobile E 11 excitons, providing an important mechanism for loss of defect-state population. Deeper trap states (i.e., those emitting at longer wavelengths) result in a decreased rate for thermal loss. The solvent-independent behavior of the short lifetime component is consistent with its assignment as the characteristic time for redistribution of exciton population between bright and dark defect states. Furthermore, the solvent dependence of the long lifetime component is shown to be consistent with relaxation via an electronic to vibrational energy transfer mechanism, in which energy is resonantly lost to solvent vibrations in a complementary mechanism to multiphonon decay processes.

36 MATERIALS SCIENCE↗

Suppression of compensating native defect formation during semiconductor processing via excess carriers

In many semiconductors, compensating defects set doping limits, decrease carrier mobility, and reduce minority carrier lifetime thus limiting their utility in devices. Native defects are often responsible. Suppressing the concentrations of compensating defects during processing close to thermal equilibrium is difficult because formation enthalpies are lowered as the Fermi level moves towards the majority band edge. Excess carriers, introduced for example by photogeneration, modify the formation enthalpy of semiconductor defects and thus can be harnessed during crystal growth or annealing to suppress defect populations. Herein we develop a rigorous and general model for defect formation in the presence of steady-state excess carrier concentrations by combining the standard quasi-chemical formalism with a detailed-balance description that is applicable for any defect state in the bandgap. Considering the quasi-Fermi levels as chemical potentials, we demonstrate that increasing the minority carrier concentration increases the formation enthalpy for typical compensating centers, thus suppressing their formation. Furthermore, this effect is illustrated for the specific example of GaSb. While our treatment is generalized for excess carrier injection or generation in semiconductors by any means, we provide a set of guidelines for applying the concept in photoassisted physical vapor deposition.

14 SOLAR ENERGY↗

Introducing thermally stable inter-tube defects to assist off-axial phonon transport in carbon nanotube films

Through integrated molecular dynamics (MD) simulations and experimental studies, we demonstrated the feasibility of an ion-irradiation-and-annealing based phonon engineering technique to enhance thermal conductivity of carbon nanotube (CNT) films. Upon ion irradiation of CNT films, both inter-tube defects and intra-tube defects are introduced. Our MD simulations show that inter-tube defects created between neighboring tubes are much more stable than intra-tube defects created on tube graphitic planes. Upon thermal annealing, intra-tube defects are preferentially removed but inter-tube defects stay. Consequently, axial phonon transport increases due to reduced phonon scattering and off-axial phonon transport is sustained due to the high stability of inter-tube defects, leading to a conductivity enhancement upon annealing. The modeling predictions agree with experimental observations that thermal conductivities of CNT films were enhanced after 2 MeV hydrogen ion irradiations and conductivities were further enhanced upon post irradiation annealing.

36 MATERIALS SCIENCE↗

Defect structure and electronic properties of SiOC:H films used for back end of line dielectrics

Back end of the line dielectrics (BEOL) with low dielectric constants, so called low-k dielectrics, are needed for current and future integrated circuit technology nodes. However, an understanding of the defects which limit reliability and cause leakage currents for these films is not yet developed. We primarily utilize conventional electron paramagnetic resonance (EPR) and leakage current measurements to investigate amorphous hydrogenated carbon doped oxide (a-SiOC:H) dielectrics, the most important in current BEOL technology. The resonance measurements were complemented by transmission Fourier-transform infra-red spectroscopy, x-ray reflectivity, and Rutherford backscattering measurements. Various compositions of a-SiOC:H films were deposited on 300 mm diameter Si (100) wafers. They exhibit a wide range of dielectric constant, composition, and porosity. Variations in deposition method, process chemistry, and post deposition curing were also investigated. We observe a remarkable range of paramagnetic defect populations within the films. In a large subset of the films with similar defect structure, we observe a strong correlation between carbon dangling bond paramagnetic defect densities and leakage currents, especially at lower electric fields. This correspondence strongly suggests that, in this subset, defects observed by EPR are in a large part responsible for the leakage currents at low electric fields. In addition, the results suggest that the observed defects likely limit the dielectric reliability in problems such as time dependent dielectric breakdown and stress induced leakage current in many of these films. However, the EPR results are complex, and a simple universal correspondence between defect populations and leakage does not seem to be present.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It was found that during the growth of the p-type GaN capping layer, loss of part of the active region enclosed within a trench defect occurred, affecting the top-most QWs in the MQW stack. Indium platelets and voids were also found to form preferentially at the bottom of the MQW stack. The presence of high densities of trench defects in the LEDs was found to relate to a significant reduction in photoluminescence and electroluminescence emission efficiency, for a range of excitation power densities and drive currents. This reduction in emission efficiency was attributed to an increase in the density of non-radiative recombination centres within the MQW stack, believed to be associated with the stacking mismatch boundaries which form part of the sub-surface structure of the trench defects. Investigation of the surface of green-emitting QW structures found a two decade increase in the density of trench defects, compared to its blue-emitting counterpart, suggesting that the efficiency of green-emitting LEDs may be strongly affected by the presence of these defects. Our results are therefore consistent with a model that the “green gap” problem might relate to localized strain relaxation occurring through defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗