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At least 523 records · Page 29

Heterostructure solar cells

The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases the substrate was thinned to reduce overall cell weight with good ruggedness. The conversion efficiency of 2 by 2 cm cells under AMO reached 17.1 percent with a cell thickness of 6 mils. The work described forms the basis for future cascade cell structures, where similar interconnecting problems between the top cell and the bottom cell must be solved. Applications of the GaAs/Ge solar cell in space and the expected payoffs are discussed.

Chang, K. I.↗

Mechanically-stacked tandem solar cells with GaAsP on GaP and silicon

Preliminary results are encouraging for the achievement of high conversion efficiencies using a GaAsP top solar cell mechanically stacked on a conventional silicon solar cell. A realistic maximum of 29.4 percent is suggested when both the top and bottom solar cells are state of the art. Practical system efficiencies greater than 25 percent are attainable in the near future with the use of a state of the art bottom solar cell.

Negley, Gerald H.↗

Ultralight amorphous silicon alloy photovoltaic modules for space applications

Ultralight and ultrathin, flexible, rollup monolithic PV modules have been developed consisting of multijunction, amorphous silicon alloys for either terrestrial or aerospace applications. The rate of progress in increasing conversion efficiency of stable multijunction and multigap PV cells indicates that arrays of these modules can be available for NASA's high power systems in the 1990's. Because of the extremely light module weight and the highly automated process of manufacture, the monolithic a-Si alloy arrays are expected to be strongly competitive with other systems for use in NASA's space station or in other large aerospace applications.

Hanak, J. J.↗

Status of indium phosphide solar cell development at Spire

On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

Spitzer, M. B.↗

Solar cells in bulk InP using an open tube diffusion process

A simple open tube diffusion technique for the fabrication of n+p junction solar cells is described. Large area (greater than 0.25 square cm) solar cells have been made by this process with a photovoltaic conversion efficiency of 15.2 percent under simulated AMO illumination. An ideality factor is 1.04 and a saturation current density of 9.6 times 10 to the minus 16th power A/square cm have been observed for these cells. These are the lowest (best) values reported to date for diffused structures in bulk InP.

Parat, K. K.↗

P/N InP homojunction solar cells by LPE and MOCVD techniques

P/N InP homojunction solar cells have been prepared by using both liquid phase epitaxy (LPE) and metallorganic chemical vapor deposition (MOCVD) growth techniques. A heavily doped p-In sub 0.53Ga sub 0.47As contacting layer was incorporated into the cell structure to improve the fill factor and to eliminate surface spiking at the front surface. The best conversion efficiencies (total area) obtained under AM 1 illumination are 14.2 percent for a LPE cell and 15.4 percent for a MOCVD cell.

Choi, K. Y.↗

InP materials/cell fabrication

The main points of discussion, conclusions and recommendations of a workshop on InP materials and cell fabrication are given. The importance of assessing the quality of p-Inp crystals supplied by different vendors, back contacts to solar cells, junction formation, energy conversion efficiency, testing for radiation resistance, and future develpments were among the topics discussed.

Coutts, T. J.↗

The potential impact of new power system technology on the design of a manned Space Station

Larger, more complex spacecraft of the future such as a manned Space Station will require electric power systems of 100 kW and more, orders of magnitude greater than the present state of the art. Power systems at this level will have a significant impact on the spacecraft design. Historically, long-lived spacecraft have relied on silicon solar cell arrays, a nickel-cadmium storage battery and operation at 28 V dc. These technologies lead to large array areas and heavy batteries for a Space Station application. This, in turn, presents orbit altitude maintenance, attitude control, energy management and launch weight and volume constraints. Size (area) and weight of such a power system can be reduced if new higher efficiency conversion and lighter weight storage technologies are used. Several promising technology options including concentrator solar photovoltaic arrays, solar thermal dynamic and ultimately nuclear dynamic systems to reduce area are discussed. Also, higher energy storage systems such as nickel-hydrogen and the regenerative fuel cell (RFC) and higher voltage power distribution which add system flexibility, simplicity and reduce weight are examined. Emphasis placed on the attributes and development status of emerging technologies that are sufficiently developed so that they could be available for flight use in the early to mid 1990's.

Fordyce, J. S.↗

Raman-shifted dye laser for water vapor DIAL measurements

For improved DIAL measurements of water vapor in the upper troposphere or lower stratosphere, narrowband (about 0.03/cm) laser radiation at 720- and 940-nm wavelengths was generated by stimulated Raman scattering (SRS), using the narrow linewidth (about 0.02/cm) output of a Nd:YAG-pumped dye laser. For a hydrogen pressure of 350 psi, the first Stokes conversion efficiencies to 940 nm were 20 percent and 35 percent, when using a conventional and waveguide Raman cell, respectively. The linewidth of the first Stokes line at high cell pressures, and the inferred collisional broadening coefficients, agree well with those previously measured in spontaneous Raman scattering.

Grossmann, B. E.↗

Boron Carbides As Thermo-electric Materials

Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

Wood, Charles↗

Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm.

Heinbockel, John H.↗

High power density electrodes for AMTEC

Trilayer tungsten/platinum electrodes have provided dramatic improvements in stable power densities in alkali metal thermoelectric converters (AMTEC) experimental cells. The specific power density required to achieve a system conversion efficiency of approximately 15 percent or more with temperatures appropriate to space nuclear power sources is examined. Thus, if the observed power densities are sustained for thousands of hours, prototype AMTEC space nuclear power systems can be designed and tested.

Bankston, C. Perry↗

The performance of Schottky diodes as far-infrared modulators

The performance as a THz-frequency modulator of a small-area Schottky diode mounted in a corner-cube antenna is evaluated, including the effects of carrier inertia and dielectric relaxation. Calculations are performed for a 1.4-micron diameter diode operating at a carrier frequency of 2.252 THz and a modulation frequency of 8 GHz. The phase modulation is found to completely dominate the amplitude modulation. The performance is shown to be degraded well below the plasma frequency in the undepleted epilayer due to the presence of a second resonance caused by the interaction of the barrier capacitance and the effective inductance due to carrier inertia. An increase in epilayer doping (reducing the diode radius) may improve the single-sideband conversion efficiency by about 20 dB.

Grossman, Erich N.↗

p/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy

p/n InP homojunction solar cells with a modified contacting scheme have been fabricated from wafers grown by liquid phase epitaxy. A p(+)-In(0.53)Ga(0.47)As contacting layer is incorporated in the cell structure to reduce contact resistance and to eliminaate surface spiking problems at the front surface. The highest conversion efficiency (total area) obtained under AM0 illumination is 15.0 percent. The corresponding open-circuit voltage, short-circuit current density, and fill factor for the best cell are 0.866 V, 29.3 mA/sq cm, and 81.0 percent, respectively.

Choi, K. Y.↗

Refractory semiconductors for high temperature thermoelectric energy conversion

Thermoelectric energy conversion utilizing nuclear heat sources has been employed for several decades to generate power for deep space probes. In the past, lead telluride and, more recently, silicon-germanium alloys have been the prime choices as thermoelectric materials for this application. Currently, a number of refractory semiconductors are under investigation at the Jet Propulsion Laboratory in order to produce power sources of higher conversion efficiency and, thus, lower mass per unit of power output. Included among these materials are improved Si-Ge alloys, rare earth compounds and boron-rich borides. The criteria used to select thermoelectric materials, in general, and the above materials, in particular, will be discussed. The current state of the art and the accomplishments to date in thermoelectric materials research will be reviewed.

Wood, Charles↗

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

Vandersande, Jan W.↗

Roughening Surfaces Of Solar Cells

Proposed treatment involving bombardment by ions gives silicon solar cells rough surfaces and increases amount of light absorbed by cells. First step of treatment, wafer of single-crystal silicon held at temperature of 70 degree C or higher while bombarded with argon or hydrogen ions at kinetic energies between 100 and 2,000 eV. This high dose produces damaged layer on surface, consisting of outer polycrystalline sublayer and underlying sublayer containing extended defects. Bombarded wafer then etched chemically. Photovoltaic conversion efficiency increases with number of reflections at surface of silicon cell because large part of light absorbed at each reflection. Deeply textured surface provides opportunities for multiple reflections.

Singh, Ranbir↗

Research In Thermoelectric Materials

Report reviews current research in thermoelectric materials with view towards development of materials of greater energy-conversion efficiency. Emphasis on effort to understand and manipulate microstructure to increase thermoelectric figure of merit, Z. Thermoelectric properties of three broad categories of materials discussed. First category includes alloys of group IV elements like silicon and germanium. Second category is rare-earth chalcogenides. Third category includes narrow-band semiconductors, especially boron carbides.

Wood, Charles↗