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Results for “WAVEGUIDES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Multiloop and multiaxis atomtronic Sagnac interferometry

We report the experimental realization of a large-area and multiaxis atomtronic interferometer in an optical waveguide for rotation sensing. A large enclosed area is achieved through multiloop operation in a guided-atom interferometer using Bose-Einstein condensates. We demonstrate a three-loop interferometer with a total interrogation time of ∼ 0.4 s and an enclosed area of 8.7 mm 2 —the largest reported in a fully guided or one-dimensional setup. High-contrast interference fringes are observed for up to five Sagnac orbits in a smaller loop-area configuration. Our approach enables interleaved rotation measurements about multiple arbitrary axes within the same experimental setup. We present results for area-enclosing interferometers in both horizontal and vertical planes, demonstrating that the interferometer contrast remains comparable across orthogonal orientations of the enclosed area vectors.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Broadband, High Efficiency OMT in E-Band

A high-performance, broadband E-Band orthomode transducer (OMT) was designed and fabricated for a dedicated frequency converter. Cross-polarized signals between 71 and 86 GHz, received in a TE 11 mode circular waveguide needed to be split into separate horizontal and vertical polarization channels. The purpose of the OMT is to service the 71–76 and 81–86 GHz licensed communication bands. The main goal of OMT design is maximized transmission across the design bandwidth. Every fraction of a dB lost before the first low noise amplifier is a direct loss in SNR for the overall system. Several different design approaches were simulated, and several OMT’s and ancillary components were built and tested. In the end, practical limitations determined the final path of the completed device. The final product performed several tenths of a dB better than commercially available devices and better than most reported in academic literature. Lessons learned included which construction techniques worked and did not work, as well as what compromises are acceptable.

42 ENGINEERING↗
DOE OSTI2023

Machine-Learning Architecture for Ultrasonic Thermometry

Temperature distribution in solids can be inverted from the speed of sound (SOS) measurements, as has been shown feasible by timing the propagation of the excitation pulse and the train of echoes in ultrasonically segmented waveguides (WGs) and metal components. However, complicated geometries and closely-space echogenic features (EFs) create complex waveforms, from which the segmental time of flights (TOFs) are impossible to estimate using traditional methods. This work describes a machine learning architecture shown to extract temperature information from complex ultrasonic waveforms without explicit measurements of segmental TOFs. We accomplish this by using an autoencoder neural network (NN) to map ultrasonic waveforms into a low-dimensional latent space. A second NN then maps the latent space into unknown temperature distribution along the WG. The proposed architecture was tested in simulations and experimentally. The autoencoder accurately reconstructs the waveforms from their latent representation, several orders of magnitude lower in dimensionality. The obtained latent space was successfully mapped into the temperature of the propagation path.

John, Mason↗
DOE OSTI2023

Monolithically Integrated $\varepsilon$-Ge/In x Ga 1-x As Quantum Well Laser Design: Experimental and Theoretical Investigation

Here, we have analyzed the electrical and optical phenomenon occurring in a $\varepsilon$-Ge/In x Ga 1-x -Ge/In x Ga 1-x As quantum well (QW) laser through self-consistent physical solvers calibrated using in-house experimental results. A separate confinement heterostructure QW design is proposed to enable lasing from tensile strained germanium ($\varepsilon$-Ge/In x Ga 1-x -Ge) in the range of 1.55 um to 4 um wavelengths as a function of QW thickness and indium (In) composition. Different recombination mechanisms were analyzed as a function of tensile strain in $\varepsilon$-Ge/In x Ga 1-x -Ge QW. Minority carrier lifetime and band alignment are key attributes of a QW laser, which were measured using microwave photoconductive decay and x-ray photoelectron spectroscopy (as a function of In composition), respectively. The transition point of Ge to a direct bandgap material is re-affirmed to be at $\varepsilon$-Ge/In x Ga 1-x = 1.6% (In ~24%) and the transition from type I to type II for $\varepsilon$-Ge/In x Ga 1-x -Ge/In x Ga 1-x As QW is found to be at In ~55%. Also, the transition to a TM mode dominant laser is identified at In ~15%. Using a tunable waveguide design to optimize confinement as a function of In composition, strain, wavelength, QW thickness, refractive index, and geometry, the $\varepsilon$-Ge/In x Ga 1-x -Ge QW laser design provided a net material gain of ~2000 cm -1 and a threshold current density of ~5 kA/cm 2 , which is an improvement over existing Ge based lasers. In conclusion, the impact of In composition and QW thickness on the band structure, polarized gain spectra, and various lasing metrics were analyzed to show $\varepsilon$-Ge/In x Ga 1-x -Ge/InGaAs QW lasers as promising for integrated photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers

Here, the slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers

Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. Here, the epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Low-Power Characterization and Integration of Carbon Black Resistive Ink for Aerosol Jet-Printed RF Components

Aerosol jet printing (AJP) is gaining attention in additive manufacturing research, especially in the discipline of microwave engineering. Currently, no reliable AJP method exists to fabricate resistors that are both electrically small and with a resistance compatible with waveguide impedances for use in microwave components. In this work, the commercially available Metalon JR-038 is characterized and used to fabricate a resistor that is 100 μ m long by 250 μ m wide for the first time to the best of our knowledge. Furthermore, this resistor was then used to fabricate a Ka-band Wilkinson power divider using only the AJP process.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

We demonstrate a superluminescent diode fabricated on a nonpolar m-plane GaN substrate by employing a linearly tapered waveguide design. A high electrical -3dB modulation bandwidth ( f\n 3dB \n) of 2.5 GHz at a current density of 30 kA/cm\n 2 \n is achieved. The high modulation bandwidth is attributed to the shorter carrier recombination lifetime, the linear gain curve in the nonpolar m-plane quantum wells, and the ability to operate at high current densities while effectively suppressing lasing. We derive a general expression for the -3dB bandwidth as a function of current density for SLDs using a similar approach to that for laser diodes. The -3dB bandwidth of a nonpolar superluminescent diode increases exponentially with current density. The experimental results are consistent with the derived expression for f\n 3dB \n vs. current density.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Buried-Electrode Hybrid Bonded Thin-Film Lithium Niobate Electro-Optic Mach-Zehnder Modulators

Hybrid bonded silicon nitride thin-film lithium niobate (TFLN) Mach-Zehnder modulators (MZMs) at 1310 nm were designed with metal coplanar waveguide electrodes buried in the silicon-on-insulator (SOI) chip. Here, the MZM devices showed greatly improved performance compared to earlier devices of a similar design, and similar performance to comparable MZM devices with gold electrodes made on top of the TFLN layer. Both devices achieve a 3-dB electro-optic bandwidth greater than 110 GHz and voltage-driven optical extinction ratios greater than 28 dB. Half-wave voltage-length products (VπL) of 2.8 and 2.5 V∙ cm were measured for the 0.5 and 0.4 cm long buried metal and top gold electrode MZMs, respectively.

42 ENGINEERING↗
DOE OSTI2020

Luminescent Solar Concentrator Tandem-on-Silicon with above 700mV Passivated Contact Silicon Bottom Cell

Luminescent solar concentrator (LSC) tandem-on-silicon (Si) provides a route towards achieving higher than 30% overall efficiency which can overcome the theoretical efficiency limit of a single junction Si cell. Here, we present optical coupling and performance of high Voc passivated contact Si bottom cell for LSC tandem-on-Si where the top module consists of highly efficient luminophores and an array of micro InGaP cells embedded in a poly (lauryl methacrylate) waveguide. In this device configuration, InGaP cell area coverage is only ~0.5% of the total LSC area which significantly reduces the high cost III-V material usage. The performance of Si sub-cell is investigated under LSC spectrum and is compared against the measurement done under 1 um thick InGaP filter which mimics the spectrum seen by Si bottom cell in a conventional III-V/Si tandem. V oc of greater than 700 mV has been observed for the passivated contact Si bottom cell in these tandem applications.

14 SOLAR ENERGY↗
DOE OSTI2024

Ta Based Damascene Resonators

Transmon qubits have become a leading technology in quantum information science (QIS), with fabrication techniques widely accessible. Historically, devices were predominantly made from aluminum (Al) and niobium (Nb), but state-of-the-art transmons now use tantalum (Ta) achieving coherence times up to and exceeding 0.5 milliseconds [1-3]. The differentiation in performance between Ta and Nb-based devices is attributed to the surface oxidation states affecting Two-Level-System (TLS) noise. One approach to quickly evaluating material and device performance consists of fabricating only the readout resonator of a qubit and evaluating the quality factor which is the strategy employed in this project. Our research focuses on Ta coplanar waveguide (CPW) resonators fabricated using a damascene technique producing pristine metal structures within silicon substrates. This approach increases the dielectric substrate's participation ratio while keeping device edges oxide-free due to entrenchment. This collaborative effort, involving Pacific Northwest National Laboratory (PNNL), NY CREATES/SUNY Poly, and Brookhaven National Laboratory (BNL), has resulted in resonators with Q factors as high as 104 at low power. Ongoing studies aim to further understand and improve device performance by systematic analysis of oxygen trapped between device layers during processing. This research showcases the potential for significant improvements in superconducting qubit performance via the damascene process, heralding new possibilities for the advancement of scalable QIS technology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Quantum State Transfer between Heterogeneous 3D QPUs

We present detailed analyses and microwave simulations of a quantum interconnect architecture that couples two distinct three-dimensional quantum processing units (QPUs): (i) a two-cell superconducting radio-frequency (SRF) cavity coupled to multiple transmon qubits and (ii) a waveguide-based cavity hosting a planar circuit with transmons and resonators. The modules are linked via a low-loss superconducting coaxial cable, which serves as a quantum bus. Finite-element electromagnetic simulations are performed to optimize coupling strengths and mode frequencies for high-fidelity quantum state transfer between cavities. These simulation results provide a comprehensive blueprint for the experimental realization of a flexible quantum interconnect architecture, coupling heterogeneous QPUs.

Yaker, Joey [Fermilab]↗
DOE OSTI2023

Antenna With Embedded Die in Glass Interposer for 6G Wireless Applications

This article presents the antenna-integrated glass interposer for D-band 6G wireless applications using dieembedding technology. Here, we implement the die-embedded package on glass substrates and characterize the electrical performance in the D-band. The electrical characterization employs embedded test dies with the 50-Ω ground–signal–ground (GSG) ports and coplanar waveguides. We achieve low-loss die-to-package transitions by using staggered dielectric vias, which are compared with the transitions of wire-bonding and flip-chip assembly. This article provides detailed information on the design, modeling, fabrication, and characterization of the die-to-package interconnects. This article also demonstrates the integration of microstrip patch antenna array and embedded dies in the D-band. The results show superior electrical performance provided by the die-embedded glass interposer. The die-to-package interconnect exhibits good matching (less than —10-dB S11) and low loss (0.2-dB loss) in the D-band. The integrated 1 × 8 patch antenna array shows 11.6-dB broadside gain and good matching with the embedded die. In addition, by using a temporary carrier, the antenna-integrated glass interposer also has great potential for further heterogeneous integration and thermal management.

42 ENGINEERING↗
DOE OSTI2025

Miniaturized Millimeter-Wave Multilayer Filter Design Using Additive Manufacturing

Here, this article presents an innovative, fully additive manufactured approach to millimeter-wave multilayer circuits. An aerosol jet printer is used to fabricate a multilayer stepped-impedance low-pass filter. By leveraging the second layer for miniaturization, we achieve a more compact design. By precisely controlling conductor separation and utilizing 3-D printing technology, we were able to optimize the width of the high- and low-impedance segments for optimal filter performance. Two filter types were successfully fabricated: a low-pass microstrip filter and a low-pass stripline filter, both with a cutoff frequency near 29 GHz and exhibiting acceptable stopband attenuation. The stripline configuration allows for a 36% decrease in the stripline waveguide conductor area while achieving a great passband insertion loss of just 0.62 dB, enabled by aerosol jet printing (AJP). The line loss of both designs was characterized using a microstrip through line and a stripline through line. Both designs demonstrated low overall loss, with the microstrip line exhibiting a loss of 0.26 dB/mm and the stripline having a loss of 0.37 dB/mm at 29 GHz. This work demonstrates a multilayer integration solution and offers an advantage in reducing the size of RF circuits such as filter banks for next-generation integrated RF front ends.

additive manufacturing↗
DOE OSTI2022

Topology-empowered membrane devices for terahertz photonics

Control of terahertz waves offers a profound platform for next-generation sensing, imaging, and information communications. However, all conventional terahertz components and systems suffer from bulky design, sensitivity to imperfections, and transmission loss. We propose and experimentally demonstrate on-chip integration and miniaturization of topological devices, which may address many existing drawbacks of the terahertz technology. We design and fabricate topological devices based on valley-Hall photonic structures that can be employed for various integrated components of on-chip terahertz systems. We demonstrate valley-locked asymmetric energy flow and mode conversion with topological waveguide, multiport couplers, wave division, and whispering gallery mode resonators. Our devices are based on topological membrane metasurfaces, which are of great importance for developing on-chip photonics and bring many features into terahertz technology.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Direction-dependent elastic wave scattering and mode coupling in elastic plates

Asymmetric scattering is a phenomenon in which the field scattered from a discontinuity is dependent on the direction of incidence. In waveguide systems such as elastic plates, the existence of multiple propagating modes provides a platform to explore asymmetric scattering through direction-dependent mode coupling. This paper describes this concept in the context of reciprocal systems and how to utilize it in a general manner.

Haberman, Michael↗
DOE OSTI2020

The influence of irregular terrain on infrasonic propagation in the troposphere

The relations describing the reflection of three-dimensional acoustic ray paths impinging on a non-flat surface are derived and used to approximate the propagation of infrasonic signals over irregular terrain in the geometric limit. The influence of non-flat ground is strongest for those paths that reflect off the surface multiple times, such as those in the tropospheric waveguide; however, notable differences in source and receiver elevations for stratospheric and thermospheric paths can produce notable differences in travel times and arrival amplitudes. The interaction of ray paths with topographical features is investigated using a simple hill to demonstrate the impact of topography on propagation within an azimuthal plane, as well as cases in which the ground surface interaction deflects the path out of the azimuthal plane. Finally, broadband waveform predictions are compared with observations for an event in the western U.S., and a statistical analysis of scattering losses due to interaction with topography in the limit of geometric acoustics is used to improve the agreement between predicted and observed infrasonic signals.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Engineered chirality of one-dimensional nanowires

The origin and function of chirality in DNA, proteins, and other building blocks of life represent a central question in biology. Observations of spin polarization and magnetization associated with electron transport through chiral molecules, known collectively as the chiral induced spin selectivity effect, suggest that chirality improves electron transfer. Using reconfigurable nanoscale control over conductivity at the LaAlO 3 /SrTiO 3 interface, we create chiral electron potentials that explicitly lack mirror symmetry. Quantum transport measurements on these chiral nanowires reveal enhanced electron pairing persisting to high magnetic fields (up to 18 tesla) and oscillatory transmission resonances as functions of both magnetic field and chemical potential. We interpret these resonances as arising from an engineered axial spin-orbit interaction within the chiral region. The ability to create one-dimensional electron waveguides with this specificity creates opportunities to test, via analog quantum simulation, theories about chirality and spin-polarized electron transport in one-dimensional geometries.

Science & Technology - Other Topics↗