Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Tunnel junctions”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise

This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.

Zhao, Kai↗
DOE OSTI2023

Simulating noise on a quantum processor: interactions between a qubit and resonant two-level system bath

Material defects fundamentally limit the coherence times of superconducting qubits, and manufacturing completely defect-free devices is not yet possible. Therefore, understanding the interactions between defects and a qubit in a real quantum processor design is essential. We build a model that incorporates the standard tunneling model, the electric field distributions in the qubit, and open quantum system dynamics, and draws from the current understanding of two-level system (TLS) theory. Specifically, we start with one million TLSs distributed on the surface of a qubit and pick the 200 systems that are most strongly coupled to the qubit. We then perform a full Lindbladian simulation that explicitly includes the coherent coupling between the qubit and the TLS bath to model the time dependent density matrix of resonant TLS defects and the qubit. We find that the 200 most strongly coupled TLSs can accurately describe the qubit energy relaxation time. This work confirms that resonant TLSs located in areas where the electric field is strong can significantly affect the qubit relaxation time, even if they are located far from the Josephson junction (JJ). Similarly, a strongly-coupled resonant TLS located in the JJ does not guarantee a reduced qubit relaxation time if a more strongly coupled TLS is far from the JJ. In addition to the coupling strengths between TLSs and the qubit, the model predicts that the geometry of the device and the TLS relaxation time play a significant role in qubit dynamics. Our work can provide guidance for future quantum processor designs with improved qubit coherence times.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1972

Photocapacitance effects at a Cu2S-CdS heterojunction.

The influence of trapped charge on the photovoltaic properties of an efficient Cu2S-CdS single-crystal heterojunction has been studied by a photocapacitance technique. For the nonheat-treated cell, a persistent increment in capacitance as high as 70% of the dark capacitance remained after illumination of the junction by band-gap light at 100 K. The additional capacitance is due to holes trapped in deep levels in the CdS depletion region near the interface. The trapped holes enhanced the 100 K photocurrent spectrum uniformly by a factor of 3 before heat treatment. After a 200 C heat treatment in air, the maximum trapped charge at 100 K enhanced the photocurrent by two orders of magnitude. The results are interpreted in terms of the tunneling through a conduction band spike of electrons photoexcited in the Cu2S.

Lindquist, P. F.↗
NASA NTRS1951

Preliminary Investigation of the Supersonic Flow Field Downstream of Wire-mesh Nozzles in a Constant-area Duct / Lawrence I. Gould

An investigation was conducted in a 3.4- by 3.4-inch duct to determine the characteristics of the supersonic flow downstream of four wire-mesh screen nozzles with nominal design Mach numbers in the range between 1.97 and 2.58. Two types of disturbances were observed in the flow field: a fine network of interacting expansion and compression waves which were formed immediately downstream of the screens and appeared to dissipate within 25 to 40 wave intersections; and relatively strong oblique shock waves that originated at the junctions of the screens and the walls and were reflected throughout the length of the duct. Regions of fairly uniform flow were found to exist. The total-pressure loss across the screens varied from 22 percent at Mach number 1.58 to 43 percent at Mach number 2.06.

WIND TUNNELS↗
DOE OSTI2020

Spatially Resolved Investigation of Mixed Valence and Insulator-to-Metal Transition in an Organic Salt

Using scanning tunneling microscopy/spectroscopy (STM/STS), we investigate the evolution of electronic structures across the boundaries of 7,7,8,8-tetracyanoquinodimethane (TCNQ) and K-TCNQ assemblies on a weakly interacting substrate. Despite the semiconducting/insulating nature of TCNQ (TCNQ 0 ) and K-TCNQ (TCNQ -1 ), a continuum metallic-like density of states extending deep (~1.5 nm) into the TCNQ assembly is observed near domain boundary. We attribute the formation of these states to the abrupt change of molecular valence, which perturbs the electrostatics of the junction and creates local electric fields as evidenced by the band bending near domain boundary. To the best of our knowledge, this study provides the first microscopic understanding of the crucial physics occurring near domain boundaries of mixed valence in K-TCNQ, or broadly speaking charge transfer complexes, which highlights these boundaries as potential “weak” points to initiate the electric field induced insulator-to-metal transition.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2021

Hypersonic Boundary-Layer Instabilities over Ogive-Cylinder Models

Computational investigations of an ogive-cylinder geometry with varying nosetips at zero degrees angle of attack are presented. The model geometry and conditions are selected to match experiments conducted in the Air Force Research Laboratory (AFRL) Mach 6 Ludwieg Tube. Five nosetips of interest were selected for the computational studies herein: two sharp ogives, two blunt ogives, and one hemispherical nosetip. Computations are performed at a freestream Reynolds number of 7.01 × 10 6 m -1 . Each sharp and blunt tip ogives had a 14 and 28 degree version for the tip angles. A cylindrical section follows the nosetip, resulting in a meter long model such as in the experiments. The laminar flow solutions are analyzed. The boundary-layer-edge properties and the velocity and temperature profiles are compared across streamwise locations aft of the ogive-cylinder junction. The blunt nosetips induce an entropy layer that envelopes the boundary-layer profiles. Modal stability analysis identifies most amplified frequencies corresponding to Mack’s second modes that agree with experimental results for the sharp tips. Similar to the experimental measurements based on wall-mounted pressure sensors, no unstable modes are found for the blunt models. Nonmodal analysis revealed a broadband set of disturbances present for the blunter tips, in agreement with experimental observations. Flow perturbation contours of most amplified planar and oblique disturbances are shown to qualitatively match wind tunnel Schlieren images, with a switch from rope-like to elongated structures, i.e., from high frequency Mack’s second modes to low frequency Mack’s first modes, as the nosetip angle is increased for the sharp tip, and from boundary-layer to entropy-layer disturbances as the bluntness is increased.

Boundary layer transition↗
NASA NTRS2022

Hypersonic Boundary-Layer Instabilities over Ogive-Cylinder Models

Computational investigations of an ogive-cylinder geometry with varying nosetips at zero degrees angle of attack are presented. The model geometry and conditions are selected to match experiments conducted in the Air Force Research Laboratory (AFRL) Mach 6 Ludwieg Tube. Five nosetips of interest were selected for the computational studies herein: two sharp ogives, two blunt ogives, and one hemispherical nosetip. Computations are performed at a freestream Reynolds number of 7.01 × 10 6 m -1 . Each sharp and blunt tip ogives had a 14 and 28 degree version for the tip angles. A cylindrical section follows the nosetip, resulting in a meter long model such as in the experiments. The laminar flow solutions are analyzed. The boundary-layer-edge properties and the velocity and temperature profiles are compared across streamwise locations aft of the ogive-cylinder junction. The blunt nosetips induce an entropy layer that envelopes the boundary-layer profiles. Modal stability analysis identifies most amplified frequencies corresponding to Mack’s second modes that agree with experimental results for the sharp tips. Similar to the experimental measurements based on wall-mounted pressure sensors, no unstable modes are found for the blunt models. Nonmodal analysis revealed a broadband set of disturbances present for the blunter tips, in agreement with experimental observations. Flow perturbation contours of most amplified planar and oblique disturbances are shown to qualitatively match wind tunnel Schlieren images, with a switch from rope-like to elongated structures, i.e., from high frequency Mack’s second modes to low frequency Mack’s first modes, as the nosetip angle is increased for the sharp tip, and from boundary-layer to entropy-layer disturbances as the bluntness is increased.

Boundary layer transition↗
DOE OSTI2024

Controlling the Fluctuating Tip-Enhanced Raman Spectra of Chloramben on Silver Nanocubes

Tip-enhanced Raman (TER) scattering from molecules residing at plasmonic junctions can be used to detect, identify, and image single molecules. This is most evident for flat molecules interrogated under extreme conditions of temperatures and pressure. It is also the case for (bio)molecular systems that feature preferred orientations/conformations under ambient laboratory conditions. More complex molecules that can adopt multiple conformations and/or that feature different protonation and/or charge states give rise to complex TER spectra. Here we illustrate how the latter can be controlled in the case of chloramben molecules coated onto plasmonic silver nanocubes. We show that characteristic molecular Raman spectra cannot be obtained when tunneling plasmons are operative, i.e., when the tip is in direct contact with the chemically functionalized plasmonic nanoparticles. We rationalize these observations and propose an approach to less invasive, and hence, more analytical TER spectral imaging.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Adaptive Scalpel Scanning Probe Microscopy for Enhanced Volumetric Sensing in Tomographic Analysis

Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM). While advances have enabled volumetric probing of conductive features with nanometer accuracy in solid‐state devices, materials, and photovoltaics, limitations in spatial resolution and volumetric sensitivity persist. This work identifies and addresses in‐plane and vertical tip‐sample junction leakage as sources of parasitic contrast in tomographic AFM, hindering real‐space 3D reconstructions. Novel strategies are proposed to overcome these limitations. First, the contrast mechanisms analyzing nanosized conductive features are explored when confining current collection purely to in‐plane transport, thus allowing reconstruction with a reduction in the overestimation of the lateral dimensions. Furthermore, an adaptive tip‐sample biasing scheme is demonstrated for the mitigation of a class of artefacts induced by the high electric field inside the thin oxide when volumetrically reduced. This significantly enhances vertical sensitivity by approaching the intrinsic limits set by quantum tunneling processes, allowing detailed depth analysis in thin dielectrics. The effectiveness of these methods is showcased in tomographic reconstructions of conductive filaments in valence change memory, highlighting the potential for application in nanoelectronics devices and bulk materials and unlocking new limits for tomographic AFM.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Integration effects of pylon geometry on a high-wing transport airplane

An investigation was conducted in the Langley 16-Foot Transonic Tunnel to determine the installation effects of a series of pylons that had differing cross-sectional shapes on the pressure distributions and aerodynamic characteristics of a 1/24-scale high wing transport. The tests were conducted at Mach numbers at 0.70 and 0.80 at angles of attack from -3 degrees to 4 degrees with the pylons tested at various toe angles between 5 degrees inboard and 5 degrees outboard. Results of this study indicate that the installed drag was lowest for the pylons with a compression pylon type design which kept the flow under the wing in the pylon/wing junction comparable to the clean wing velocities.

Carlson, John R.↗
NASA NTRS1990

Aerodynamic pressure and heating-rate distributions in tile gaps around chine regions with pressure gradients at a Mach number of 6.6

Surface and gap pressures and heating-rate distributions were obtained for simulated Thermal Protection System (TPS) tile arrays on the curved surface test apparatus of the Langley 8-Foot High Temperature Tunnel at Mach 6.6. The results indicated that the chine gap pressures varied inversely with gap width because larger gap widths allowed greater venting from the gap to the lower model side pressures. Lower gap pressures caused greater flow ingress from the surface and increased gap heating. Generally, gap heating was greater in the longitudinal gaps than in the circumferential gaps. Gap heating decreased with increasing gap depth. Circumferential gap heating at the mid-depth was generally less than about 10 percent of the external surface value. Gap heating was most severe at local T-gap junctions and tile-to-tile forward-facing steps that caused the greatest heating from flow impingement. The use of flow stoppers at discrete locations reduced heating from flow impingement. The use of flow stoppers at discrete locations reduced heating in most gaps but increased heating in others. Limited use of flow stoppers or gap filler in longitudinal gaps could reduce gap heating in open circumferential gaps in regions of high surface pressure gradients.

Hunt, L. Roane↗
DOE OSTI2023

Doped GaInAs/GaP Quantum Well Superlattice Solar Cells With 27.5% Efficiency

Quantum wells can extend the absorption range of a solar cell and are typically placed in the intrinsic region of the device to enable efficient carrier collection via drift. Thick intrinsic regions are needed for significant absorption in the low bandgap quantum wells, resulting in a large depletion region recombination and ultimately a solar cell with a low fill factor (FF). However, in quantum well superlattice solar cells where tunneling plays a dominant role in carrier transport, collection by carrier diffusion may be possible, relieving the requirement for quantum wells to be placed in the intrinsic region. Here, we investigate doping in stress-balanced quantum well superlattice solar cells using thin 2 nm GaP barriers. Doping reduces J02 depletion region recombination and improves the solar cell FF up to 86.7%, but very high doping eventually reduces the carrier collection, leading to a tradeoff in efficiency. Finally, we show that the barrier thickness also plays an important role in carrier collection, and we demonstrate high efficiency 27.5% single-junction devices with a doped superlattice.

13 HYDRO ENERGY↗
NASA NTRS1992

High speed aerodynamics of upper surface blowing aircraft configurations

An experimental investigation of the high speed aerodynamics of Upper Surface Blowing (USB) aircraft configurations has been conducted to accurately define the magnitude and causes of the powered configuration cruise drag. A highly instrumented wind tunnel model of a realistic USB configuration was used which permitted parametric variations in the number and spanwise location of the nacelles and was powered with two turbofan engine simulators. The tests conducted in the Ames 14 Foot Transonic Wind Tunnel examined 10 different configurations at Mach numbers from 0.5 to 0.775, fan nozzle pressure ratios from 1.1 to 2.1 and angles of attack from -4 to 6 degrees. Measured force data is presented which indicates the cruise drag penalty associated with each configuration and surface pressure contour plots are used to illustrate the underlying flowfield physics. It was found that all of the tested configurations suffered from a severe drag penalty which increased with freestream Mach number, power setting and angle of attack and was associated with the presence of strong shocks and regions of separated flow in the wing/nacelle junction regions.

Birckelbaw, Larry D.↗
DOE OSTI2023

Controllable superconducting to semiconducting phase transition in topological superconductor 2M-WS 2

The investigation of exotic properties in two-dimensional (2D) topological superconductors has garnered increasing attention in condensed matter physics, particularly for applications in topological qubits. Despite this interest, a reliable way of fabricating topological Josephson junctions (JJs) utilizing topological superconductors has yet to be demonstrated. Controllable structural phase transition presents a unique approach to achieving topological JJs in atomically thin 2D topological superconductors. In this work, we report the pioneering demonstration of a structural phase transition from the superconducting to the semiconducting phase in the 2D topological superconductor 2M-WS 2 . We reveal that the metastable 2M phase of WS 2 remains stable in ambient conditions but transitions to the 2H phase when subjected to temperatures above 150°C. We further locally induced the 2H phase within 2M-WS 2 nanolayers using laser irradiation. Notably, the 2H phase region exhibits a hexagonal shape, and scanning tunneling microscopy (STM) uncovers an atomically sharp crystal structural transition between the 2H and 2M phase regions. Moreover, the 2M to 2H phase transition can be induced at the nanometer scale by a 200 keV electron beam. The electrical transport measurements further confirmed the superconductivity of the pristine 2M-WS 2 and the semiconducting behavior of the laser-irradiated 2M-WS 2 . Furthermore, our results establish a novel approach for controllable topological phase change in 2D topological superconductors, significantly impacting the development of atomically scaled planar topological JJs.

2D materials↗
DOE OSTI2021

Nematic order driven by superconducting correlations

The interplay of nematicity and superconductivity has been observed in a wide variety of quantum materials. To explore this interplay, we consider a two-dimensional (2D) array of nematogens, local droplets with Z 3 nematicity, coupled to a network of Josephson junction wires. Using finite temperature classical Monte Carlo simulations, we elucidate the phase diagram of this model and show that the development of superconducting correlations and the directional delocalization of Cooper pairs can promote nematogen ordering, resulting in long-range nematic order. We obtain the transport properties of our model within an effective resistor network picture. We discuss these ideas in the context of the 2D electron gas at the (111) KTaO 3 interface and the doped topological insulators Nb x Bi 2 Se 3 and Cu x Bi 2 Se 3 . Overall, our work makes contact with Phil Anderson’s numerous contributions to broken symmetries driven by the saving of kinetic energy, including double exchange ferromagnetism and the interlayer tunneling theory of high Tc csuperconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1989

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Hoofring, A. B.↗
DOE OSTI2023

High-Performance Passivating Contacts for Si PV Based on Engineered, Doped Nanopinholes through Dielectric Layers

We present a novel, industrially relevant method to fabricate high-performance poly-Si passivating contacts for Si PV. Passivating contacts based on SiOx/poly-Si layer stacks have been implemented in record-efficiency homojunction Si solar cells. In this technology, the carrier transport through a surface-passivating SiOx is enabled either by quantum-tunneling or nanopinholes. The doped poly-Si layer provides charge-carrier selectivity. Previously, the ISFH research group demonstrated a record 26.1% efficient Si homojunction cell, where transport pinholes in ~2 nm SiOx were produced by thermal breakdown at > 1000 degrees C, which is hard to control and is surface morphology-dependent. At room temperature, our new process uses electroless plating of Ag nanoparticles, followed by metal-assisted chemical etching. Nanogalvanic corrosion yields < 20 nm-wide nanopinholes in an insulating > 2 nm SiOx layer. The nanopinholes are filled by a heavily doped a-Si:H overlayer. We drive in the dopants into the Si wafer with subsequent high-temperature annealing. Preferential incorporation of dopants at pinhole locations results in nanoscale p+/n or n+/n junctions near the wafer interface. Each heavily-doped nanoscale pinhole junction collects and transports photogenerated carriers to the cell metal contacts. The density of the engineered nanopinholes can be tuned over a wide range which is critical for optimization of device performance. The same nanogalvanic corrosion principles can be applied to produce doped transport pinholes in well-passivating thick dielectric SiOx/SiNy stacks. Importantly, our process does not rely on thermal breakdown of the dielectric layers and can be applied to textured wafers resulting in Si solar cells with > 20% conversion efficiency.

dielectric layer↗