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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Toward lower-diameter large-scale HPC and data center networks with co-packaged optics

We investigate the advantages of using co-packaged optics for building low-diameter, large-scale high-performance computing (HPC) and data center networks. The increased escape bandwidth offered by co-packaged optics can enable high-radix switch implementations of more than 150 switch ports, which can be combined with data rates of up to 400 Gb/s per port. From the network architecture perspective, the key benefits of using co-packaged optics in future fat-tree networks include (a) the ability to implement large-scale topologies of > <#comment/> 11 , 000 end points by eliminating the need for a third switching layer and (b) the ability to provide up to 4 × <#comment/> higher bisection bandwidth compared to existing solutions, reducing at the same time the number of required switch application-specific integrated circuits by > <#comment/> 80 % <#comment/> . From the network operation perspective, both reduced energy consumption and lower packet delays can be achieved since fewer hops are required; i.e., packets need to traverse fewer serializer/deserializer lanes and fewer switch buffers, which reduces the probability of contending with other packets and improves the tolerance of network congestion. The performance of the proposed architecture is evaluated via discrete-event simulations for a wide range of representative HPC synthetic-traffic cases that include both hotspot and non-hotspot scenarios. The simulation results suggest that co-packaged optics form a promising solution to keep up with bandwidth scaling in future networks, while the reduced number of switching layers can lead to significant mean packet delay improvements that start from 30% and reach up to 74% for high-load conditions.

Maniotis, Pavlos (ORCID:0000000244905253)↗
NASA NTRS1977

Power supply with optical-isolator control

Power supply consists of several stages, interconnected and programmed for required output. In capacitor charging mode, transistor switches are closed. Last stage is in series with rectifier that prevents current from flowing backward into circuit. In capacitor discharge mode, transistor switches are closed, and voltage delivered to load is sum of voltages across capacitors.

Baker, R. H.↗
NASA NTRS2010

Nanoionics-Based Switches for Radio-Frequency Applications

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Nessel, James↗
DOE OSTI2014

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Study of switching transients in high frequency converters

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.

Zinger, Donald S.↗
DOE OSTI2015

Strategies for Wide Bandgap, Inexpensive Transistors for Controlling High-efficiency Systems

Wide bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. However, today, they remain too costly relative to Si devices to gain ubiquitous adoption in many higher power applications. In 2014, ARPA-E launched a new research program entitled SWITCHES, that seeks to enable the development of high voltage (1200 V+), high current (100 A) single die power semiconductor devices that, upon ultimately reaching scale, have the potential to reach functional cost parity ($/A) with silicon power transistors while also offering breakthrough relative circuit performance (low losses, high switching frequencies, and high temperature operation).

36 MATERIALS SCIENCE↗
NASA NTRS1995

Improved L-C resonant decay technique for Q measurement of quasilinear power inductors: New results for MPP and ferrite powdered cores

The L-C resonant decay technique for measuring circuit Q or losses is improved by eliminating the switch from the inductor-capacitor loop. A MOSFET switch is used instead to momentarily connect the resonant circuit to an existing voltage source, which itself is gated off during the decay transient. Very reproducible, low duty cycle data could be taken this way over a dynamic voltage range of at least 10:1. Circuit Q is computed from a polynomial fit to the sequence of the decaying voltage maxima. This method was applied to measure the losses at 60 kHz in inductors having loose powder cores of moly permalloy and an Mn-Zn power ferrite. After the copper and capacitor losses are separated out, the resulting specific core loss is shown to be roughly as expected for the MPP powder, but anomalously high for the ferrite powder. Possible causes are mentioned.

Niedra, Janis M.↗
NASA NTRS2011

Lockout/Tagout (LOTO) Simulator

The Lockout/Tagout (LOTO) Simulator is a portable training aid, or demonstration tool, designed to physically illustrate real-time critical-safety concepts of electrical lockout/tagout. The objective is to prevent misinterpretations of what is off and what is on during maintenance and repair of complex electrical systems. The simulator is designed in the form of a hinged box that opens up and stands on its own as an easel for demonstrations. On the outer face of the unit is a simulated circuit breaker box housing the switches. The breakers control the main power to the unit, a light bulb, and an electrical control cabinet. The light bulb is wired so that either of two breakers can provide power to it. When power is sent to the electrical control cabinet, a red indicator light illuminates. Inside the cabinet is the power supply from a personal computer. The power supply produces a 12-V dc output that is sent over to a small fan next to it, also from a computer, and an amber light on the front of the cabinet illuminates. A separate switch powers the fan on and off. The power supply is behind a plastic shield to protect against exposure to live conductors. Electrical banana jacks are mounted in the plastic shield to allow a voltmeter to be connected safely when opening the cabinet and taking a meter reading to verify de-energization as part of a simulation exercise. This LOTO simulator prototype is designed and fabricated as an all-in-one unit. All accessories can be stored inside the hinged case, and there is a handle on top for ease of transport. The circuit breaker labels attach with hook and loop fasteners so that they may be moved and changed to fit the training or demonstration scenario. The warning signs and labels on the electrical control box are magnetic, allowing for easy reconfiguration to emulate different equipment setups. A specially designed magnetic cover was made to disguise the indicator lights for demonstrations when these indicators are not used. The cover is disguised as an arc flash safety label that would typically be found on such a cabinet. One indicator light has a separate switch that can take it offline. This is to allow for demonstration to trainees on why it is important not to completely rely on indicator lights, but that they should always take a meter reading at the exposed conductors to absolutely verify de-energization before exposure. A clear plastic barrier and banana jacks inside the cabinet provide a safe way to plug in a voltmeter for demonstrations without exposure to the hazards of energized equipment. A small remote control unit is wired into the fan circuit. The remote allows the demonstrator to turn the fan on and off, provided that all of the breakers and switches leading to it are configured on as well. The remote feature was added in order to demonstrate the importance of starting the lockout/tagout task with energized equipment, then powering it down, isolating it, and locking it out to ensure that the correct breakers have been locked out.

Scheer, Jennifer↗
DOE OSTI2014

Micro-electro-mechanically tunable metamaterial with enhanced electro-optic performance

We experimentally demonstrate a micro-electro-mechanically tunable metamaterial with enhanced electro-optical performance by increasing the number of movable cantilevers in the symmetrical split ring resonator metamaterial unit cell. Simulations were carried out to understand the interaction of the incident terahertz radiation with out-of-plane deforming metamaterial resonator. In order to improve the overall device performance, the number of released cantilever in a unit cell was increased from one to two, and it was seen that the tunable range was doubled and the switching contrast improved by a factor of around five at 0.7 THz. This simple design approach can be adopted for a wide range of high performance electro-optical devices such as continuously tunable filters, modulators, and electro-optic switches to enable future photonic circuit applications.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Spacecraft in switch matrix for wide band service applicatons in 30/20 GHz communications satellite systems

Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.

Cory, B. J.↗
NASA NTRS1984

A Battery Charger and State of Charge Indicator

A battery charger which has a full wave rectifier in series with a transformer isolated 20 kHz dc-dc converter with high frequency switches, which are programmed to actively shape the input dc line current to be a mirror image of the ac line voltage is discussed. The power circuit operates at 2 kW peak and 1 kW average power. The BC/SCI has two major subsystems: (1) the battery charger power electronics with its controls; and (2) a microcomputer subsystem which is used to acquire battery terminal data and exercise the state of charge software programs. The state of charge definition employed is the energy remaining in the battery when extracted at a 10 kW rate divided by the energy capacity of a fully charged new battery. The battery charger circuit is an isolated boost converter operating at an internal frequency of 20 kHz. The switches selected for the battery charger are the single most important item in determining its efficiency. The combination of voltage and current requirements dictate the use of high power NPN Darlington switching transistors. The power circuit topology is a three switch design which utilizes a power FET on the center tap of the isolation transformer and the power Darlingtons on each of the two ends. An analog control system is employed to accomplish active input current waveshaping as well as the necessary regulation.

Latos, T. S.↗
DOE OSTI2020

Impacts of Ternary-Pumped Storage Hydropower on U.S. Western Interconenction with Extremely High Renewable Penetrations

In recent years, ternary pumped storage hydropower (T-PSH), as one of the advanced PSH technologies, has attracted more attention from the industry. The interest is because of the capability of providing fast power support for the future electric grid with high penetration of renewable energy (RE). This paper focuses on studying the impact of T-PSH on frequency response of the U.S. Western Interconnection under different penetration levels of RE, which are from 20% to 80%. The detailed model of T-PSH is developed and implemented in the Western Interconnection grid model based on the GE Positive Sequence Load Flow (PSLF) platform, which can capture the unique dynamics of hydraulic short-circuit (HSC) mode and fast mode switching of T-PSH. To reveal the dynamic benefit from T-PSH, the frequency response of the Western Interconnection has been compared with and without T-PSH. In addition, a new solution is discussed that uses T-PSH to improve system stability issues caused by high RE penetration.

13 HYDRO ENERGY↗
NASA NTRS1972

Miniature intermittent contact switch

Design of electric switch for providing intermittent contact is presented. Switch consists of flexible conductor surrounding, but separated from, fixed conductor. Flexing of outside conductor to contact fixed conductor completes circuit. Advantage is small size of switch compared to standard switches.

Sword, A.↗
DOE OSTI2018

Multistates and Polyamorphism in Phase-Change K 2 Sb 8 Se 13

The phase-change (PC) materials in the majority of optical data storage media in use today exhibit a fast, reversible crystal -> amorphous phase transition that allows them to be switched between on (1) and off (0) binary states. Solid-state inorganic materials with this property are relatively common, but those exhibiting an amorphous -> amorphous transition called polyamorphism are exceptionally rare. K 2 Sb 8 Se 13 (KSS) reported here is the first example of a material that has both amorphous -> amorphous polyamorphic transition and amorphous -> crystal transition at easily accessible temperatures (227 and 263 degrees C, respectively). The transitions are associated with the atomic coordinative preferences of the atoms, and all three states of K 2 Sb 8 Se 13 are stable in air at 25 degrees C and 1 atm. All three states of K 2 Sb 8 Se 13 exhibit distinct optical bandgaps, E-g = 1.25, 1.0, and 0.74 eV, for the amorphous-II, amorphous-I, and crystalline versions, respectively. The room-temperature electrical conductivity increases by more than 2 orders of magnitude from amorphous-I to -II and by another 2 orders of magnitude from amorphous-II to the crystalline state. This extraordinary behavior suggests that a new class of materials exist which could provide multistate level systems to enable higher-order computing logic circuits, reconfigurable logic devices, and optical switches.

amorphous-amorphous transition↗
NASA NTRS2006

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Phillips, Thomas A.↗
NASA NTRS1970

Composite metal-oxide device has voltage sensitive capacitance

Device with step function variation of the capacitance is useful for voltage-controlled oscillator circuits and as a voltage-sensitive switch. Simplicity of construction makes the device suitable for large-scale integration, microelectronic circuits.

Mattauch, R. J.↗
NASA NTRS1974

High isolation RF signal selection switches

A selection switch with high isolation between RF signal input terminals is achieved with a gated Schmitt trigger circuit feeding into a control NAND gate in each signal switching channel. The control NAND gates of the separate signal channels are coupled to an output terminal by a single NAND gate. The schmitt trigger circuits and all gates are implemented with Schottky transistor-transistor logic circuits having input clamping diodes. Each Schmitt trigger circuit includes two cascaded NAND gates and a feedback isolation Schottky diode between one input terminal connected to receive an RF input and another input terminal connected to receive a feedback signal from the second of the two cascaded NAND gates. Both NAND gates of the Schmitt trigger circuits are enabled by the same switch control signal which enables the control gates.

Hanna, M. F.↗