Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SILICON OXIDE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Optics-Free Chip-Scale Intraoperative Imaging Using NIR-Excited Upconverting Nanoparticles

Here we present an optics-free CMOS image sensor that incorporates a novel time-gated dual-photodiode pixel design to allow filter- and lens-less image acquisition of near-infrared-excited (NIR-excited) upconverting nanoparticles. Recent biomedical advances have highlighted the benefits of NIR excitation, but NIR interaction with silicon has remained a challenge, even with high-performance optical blocking filters. Using a secondary diode and a dual-photodiode design, this sensor is able to remove the 100s of mV of NIR background on pixels and bring it down to single-digit mV level, nearing its noise floor of 2.2 mV rms, not achievable with any optical filter. Non-linear effects of background cancellation using the diode pair has been mitigated using an initial one-time pixel-level curve fitting and calibration in a post-processing setting. This imager comprises a highly linear 11 fF metal-oxide-metal (MOM) capacitor and includes integrated angle-selective gratings to reject oblique light and enhance sharpness. Each pixel also includes two distinct correlated double sampling schemes, to remove low frequency flicker noise and systematic offset in the datapath. We demonstrate the performance of this imager using pulsed NIR-excited upconverting nanoparticles on standard United-States-Air-Force (USAF) resolution targets and achieve an SNR of 15 dB, while keeping NIR background below 6 mV. This 36-by-80-pixel array measures only 2.3 mm by 4.8 mm and can be thinned down to 25 µm, allowing it to become surgically compatible with intraoperative instruments and equipment, while remaining optics-free.

42 ENGINEERING↗
DOE OSTI2021

Thermo-Oxidation Analysis of Structural Adhesives: An Experimental Study

Abstract Cross-linked polymers play an important role in structural applications as adhesives. In this article, we performed an experimental study to understand the effects of high temperature i.e. thermo-oxidative aging on the mechanical behavior of polymers. Subsequently, the constitutive behavior, i.e. stress-strain relation of these adhesives before and after the accelerated aging tests were studied on samples aged at different temperature and different time durations at zero humidity. The aging conditions and periods selected for the tests have been specifically designed to simulate the effects of aging under the working conditions that the materials will be subjected to in their standard applications. The focus of this study is on the investigation of the effects of aging on the polymeric adhesives used in automotive applications. Consequently, four different polymeric adhesives (one silicone-based, two polyurethane-based, and one acrylic type), which are being used extensively in these applications, have been chosen. The quasi-static tensile loading was used on these four adhesives and the changes in the constitutive behavior were measured. The failure tensile tests as well as the cyclic tensile tests were performed in our lab using a Test-Resources tensile testing machine. The temperatures that were used in this work are 60, 80 and 95°C for varying aging periods of 24hrs, 240hrs, and 720hrs. Then, all the data was collected and consequently analyzed, and the resulting behavior was compared to that of the unaged material, showing varying results depending on the material, temperature, and aging period. Different behaviors have been observed after aging. The polymers’ behavior was expanding from no effect to significant damage caused by aging conditions. This work provides the core understanding required for modeling the material behavior during aging and lays down the groundwork for further data-infused model-free approaches.

Alazhary, Sharif↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Performance of Vehicle Fuel System Elastomers and Plastics with Test Fuels Representing Gasoline Blended with 10% Ethanol (E10) and 16% Isobutanol (iBu16)

The compatibilities of fuel system elastomers and plastics were evaluated for test fuels containing 16 vol.% isobutanol (iBu16) and 10 vol.% ethanol (E10). Elastomers included two fluorocarbons, four acrylonitrile butadiene rubbers (NBRs), and one type of fluorosilicone, neoprene, and epichlorohydrin/ethylene oxide. Plastic materials included four nylon grades, three polyamides, polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), ethylene tetrafluoroethylene (ETFE), polyphenylene sulfide (PPS), high-density polyethylene (HDPE), polybutylene terephthalate (PBT), polyoxymethylene (POM), flexible polyvinylchloride (PVC), polyetherimide (PEI), polyetheretherketone (PEEK), and a phenol formaldehyde reinforced with glass fiber (GFPF). For each polymer material, the volume, mass, and hardness were measured before and after drying. Dynamic mechanical analysis (DMA) measurements were also performed on the dried specimens.For the elastomer materials the measured properties were similar for both fuels. The fluorocarbons and fluorosilicone swelled the least (~20%), while more moderate (20-45%) expansion occurred for the two NBR hose grades and (ECO). HNBR, neoprene, and silicone exhibited high swelling and softening, which likely precludes their use in many fuel systems. For the plastic materials, the observed swell was low; Nylon 11 swelled around 15%, but otherwise, their measured swell was <10%. Many of the plastics also showed sensitivity to alcohol type, as the E10 test fuel often imparted appreciably higher swell than iBu16. In general, the plastic materials showed good compatibility with the iBu16 and E10 test fuels. Here, the sole exception was the PVC material, which was structurally degraded from exposure to either fuel type. Compositional analysis showed high fuel retention in Nylon 12 and PVC. PVC also experienced a significant reduction in plasticizer compounds following exposure, which resulted in embrittlement and an increase in the glass-to-rubber transition temperature.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Multimodal, microspectroscopic speciation of legacy phosphorus in two US mid-Atlantic agricultural soils

To understand phosphorus (P) mobility in agricultural soils and its potential environmental risk, it is essential to directly measure solid phase P speciation. Often, bulk P K-edge X-ray absorption near edge structure (XANES) spectroscopy followed by linear combination fitting (LCF) is utilized to determine the solid P phases in soil. However, this method may limit results to only a few major phases. Additionally, XANES spectra for different P species may have very similar features, leading to an over- or underestimate of their contribution to LCF. Here, an improved P speciation by pairing multimodal microbeam-X-ray fluorescence (µ-XRF) mapping coupled with µ-XANES (microbeam-X-ray absorption near edge structure) analysis to directly speciate major and minor P phases on the micron scale is provided. We combined maps of both tender (P, sulfur, aluminum, and silicon) and hard energy (calcium, iron [Fe], and manganese) elements to evaluate the elemental co-locations with P. To better account for uncertainty assigning XANES peaks to individual compounds, a more quantitative fingerprinting by “spectral feature analysis” was completed. With this analysis, an R-factor is reported for the fit. These results were compared to traditional LCF. Pre-edge fitting results revealed the presence of a two-component pre-edge feature for phosphate adsorbed to ferrihydrite. Additionally, phytate co-precipitated with ferrihydrite (Phytate-Fe-Cop) had a pre-edge feature, indicating direct association with Fe. Lastly, a unique P species associated with manganese oxide was identified in the soil via multimodal mapping and µ-XANES. These results allow for better prediction of P dissolution and mobility.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2024

A new class of single-phase multiferroics: Bismuth-based layered supercell oxide thin films—Current progress and future perspectives

Multiferroic materials, where ferroelectric and magnetic orders coexist, have ignited substantial research interest due to the achievable manipulation of magnetic orders using external electric fields, a feature that has garnered serious interest for memory storage applications. Nonetheless, naturally occurring single-phase multiferroic materials are scarce, thus constraining options for practical use. Over the last decade, bismuth-based layered supercell (LSC) oxides have emerged as novel candidates for multiferroics, catalyzing extensive investigations in this domain. Additionally, these LSC systems are known for their anisotropic structures and optical properties, making them promising for application in optics such as polarizers, beam splitters, and modulators. This thorough review explores the development and current advancements in multiferroic bismuth-based LSC materials. It covers the diverse nature of LSCs, detailing their microstructure, properties, and the mechanics of self-assembly formation. It also highlights the remarkable multifunctional characteristics of LSC-based nanocomposites, with a particular focus on their applications in electronics and optics. Moreover, this review examines the significant potential of LSCs in practical applications, particularly through their integration onto silicon and flexible substrates via heteroepitaxy and film transfer techniques. Finally, it offers insights into potential future research avenues and the broader implications of these versatile LSC materials.

Materials Science↗
DOE OSTI2024

Modeling and Analysis of Polarization Losses in Solid Oxide Fuel Cells with Siloxane Contamination

In this study, the degradation of the solid-oxide fuel cell (SOFC) nickel-yttria stabilized zirconia anode under decamethyltetrasiloxane (L4) contamination is examined with experiments and modeling. A model is developed for the polarization losses based on the charge transfer coefficient,α, and diffusion layer thickness,δ, and fitted to the experimental data to understand how the siloxane degrades the SOFC performance with time. The results of the model indicate that the total polarization losses increase approximately 44% over the course of the 180 min experiment at 350 mA cm −2 . Activation losses dominate the polarization losses initially but decrease in their total contribution while concentration losses increase. Scanning electron microscopy (SEM) with wavelength dispersive X-ray spectroscopy (WDS) elemental mapping indicates that silicon deposition is highest at the outer edge of the anode and forms a barrier layer to fuel diffusion, increasing concentration losses. When the model is applied to other previous D4 and L4 siloxane experiments conducted over a period of 40 h, similar trends in polarization losses are observed. Polarization losses increase more rapidly with D4 compared to L4 siloxane contamination, with concentration losses increasing the fastest with both types of siloxane.

Electrochemistry↗
DOE OSTI2023

Multi–Resonant Mie Resonator Arrays for Broadband Light Trapping in Ultrathin c–Si Solar Cells

Effective photon management is critical to realize high power conversion efficiencies for thin crystalline silicon (c–Si) solar cells. Standard few–100–µm–thick bulk cells achieve light trapping with macroscopic surface textures covered by thin, continuous antireflection coatings. Such sizeable textures are challenging to implement on ultrathin cells. Here, it is illustrated how nanoscale Mie–resonator–arrays with a bimodal size distribution support multiple resonances that can work in concert to achieve simultaneous antireflection and light–trapping across the broad solar spectrum. The effectiveness of these light–trapping antireflection coatings is experimentally demonstrated on a 2.8 µm–thick c–Si solar cell. The measured short–circuit current and corresponding power conversion efficiency are notably improved, achieving efficiencies as high as 11.2%. Measurements of the saturation current density on completed cells indicate that thermal oxides can effectively limit surface recombination. Finally, the presented design principles are applicable to a wide range of solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Optimized Viewing Techniques to Minimize Radiation Damage From X-ray Imaging Systems

X-ray inspection of ball grid arrays (BGAs) is typically performed at one or more viewing angles to examine adhesion sites for errors such as voids, joint cracking, or head-in-pillow. During this inspection process, the cir cuit board assembly is subject to ionizing radiation exposure, which can cause trapped charge within oxide layers of semiconductor devices. Some x-ray machines allow for programmable inspection routines, which could be used to optimize radiation exposure to semiconductor components. Using Monte Carlo methods, x-ray inspection of a BGA was simulated to determine a range of acceptable viewing angles. Dose rates to circuit board components were estimated at each inspection angle to determine the view resulting in optimized radiation exposure. Results showed that for each BGA, the maximum unobstructed viewing times without exceeding a 5 Gy dose limit to a single part ranged from 82 to 94 minutes. Using a radiation cost function method, optimized viewing across all components was found. Here, it was observed that for a consistent dose limit applied to silicon-based components, performing inspection with BGAs facing the x-ray source was optimal. A third method was applied, assigning individual dose limits based on empirical data from the NASA Goddard Space Flight Center radiation database. This method showed that optimized viewing maximizes the distance between the radiation source and highly sensitive components. It was also observed that cumulative effects from viewing two BGAs will influence viewing angles, causing the optimal view of one BGA to exist nearly 180° from the other.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Ferroelectric polarization retention with scaling of Hf 0.5 Zr 0.5 O 2 on silicon

In this paper, we investigate the polarization retention of Hf 0.5 Zr 0.5 O 2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling of the ferroelectric (FE) layer thickness from 5 nm to 20 nm. The capacitors have a constant interface layer capacitance of ~24 μF/cm 2 , developed due to the integration of HZO on a degenerated Si as a bottom conducting electrode. It is observed that 20 nm HZO films show a small change (~5%) in FE polarization (P FE ) between short (10 μs) and long (6 s) retention time, while 5-nm-thick films exhibit a large difference (~90%). Furthermore, the dependence of P FE retention loss on the FE thickness can be understood by the presence of a built-in electric field in the FE layer, generated due to charge continuity between the FE and the interface layers in the ground state without any external bias. A direct experimental observation also confirms that a residual voltage is developed at the node between the metal–ferroelectric–metal and metal–oxide–semiconductor capacitors connected in series, in the ground state with zero external bias. It is expected that a proper understanding of the built-in field developed in the FE layer in an MFIS stack is crucial for FE memory retention characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (E eƒƒ ) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be E$^{-1.8}_{eƒƒ}$ and E$^{-2.4}_{eƒƒ}$, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of E eƒƒ in controlling the value of channel mobility in 4H-SiC MOSFETs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Multi-phase characterization of pitch-carbon coated nano-silicon anodes for lithium-ion batteries

Silicon (Si) is a leading next-generation Li-ion battery anode candidate that meets rigorous performance demands for portable power including enhanced power and energy density with robust cycling performance. However, a series of complex and interrelated reactions lead to reduced calendar life in Si-containing systems and therefore challenge practical adoption. In the present work, we probe the mechanisms underlying observed performance improvements by adding a pitch-carbon coating onto nano-Si material. We pair solid-phase (X-ray photoemission spectroscopy, Fourier-transform infrared), semi-volatile phase (solid-phase microextraction-gas chromatography-mass spectrometry), and gas-phase (gas chromatography-flame-ionization detector) characterization signals to comprehensively evaluate the impact of pitch-carbon coating on the evolution of the Si solid-electrolyte interphase (SEI) and the associated impacts on electrode/electrolyte reactivity. The pitch-carbon is found to serve as a physicochemical barrier, reducing the electro-active surface area for Si/electrolyte reactivity and preventing Si oxidation. Further, the pitch-carbon coating promotes the evolution of a more-favorable SEI by subsuming substantial functionality typically associated with the fluoroethylene carbonate (FEC) electrolyte additive - such as alkoxide scavenging and suppression of transesterification pathways - and by shifting the competitive electrolyte degradation pathways' favorability. The multi-phase characterization approach enables holistic end-products evaluation from complex (electro)chemical interfacial reactions, which informs a robust interpretation of the carbon coating's role in electrochemical performance improvements. The present mechanistic evaluation aids the rational design for improved nano-Si materials.

25 ENERGY STORAGE↗
DOE OSTI2023

Influence of clay mineral weathering on green rust formation at iron-reducing conditions

Green rusts (GR) are important drivers for trace metal and nutrient cycling in suboxic environments. We investigated whether green rusts would incorporate aluminum (Al) or other elements from naturally-formed clay minerals containing easily-weatherable clay minerals (e.g. mica, interlayered clays). We isolated the clay minerals from a Matapeake silt loam soil by removal of silt and sand, organic matter, and reducible oxides to study mechanisms of interaction between Fe(II) and soil-sourced clay minerals. We conducted batch Fe(II) sorption experiments at multiple near-neutral pHs (6.5–7.5) and reaction times (2h–365 days). Mineral transformations were characterized by selective extractions, X-ray diffraction (XRD), and Fe X-ray absorption spectroscopy (XAS) analyzed by shell-fitting and linear combination fitting (LCF) with natural and synthetic standards. Clay mineral fraction contained a mixture of quartz, kaolinite, interlayered vermiculite, mica, and chlorite with significant structural Fe (2.6% wt). Uptake of Fe(II) increased with pH and kinetics were rapid until 5 days, followed by slow continuous Fe(II) uptake. Citrate-bicarbonate desorption kinetics from Fe(II) sorbed clay released more Al and silicon (Si) compared with unreacted soil clay fraction whereas magnesium (Mg) and potassium (K) were unaffected. Citrate-bicarbonate extracted Fe contained more Fe(II) than an ideal GR with an Fe(II)/Fe(III) molar ratio of 5.50. Analysis of the Fe EXAFS by both LCF and shell fitting was best modeled as a combination of Fe(III)-clay reduction to Fe(II) and precipitation of GR and Fe(II)-Al LDH. After 7 days of Fe(II) sorption, LCF identified 55.2% total Fe in clay, 33.4% GR(Cl) and 11.4% Fe(II)-Al LDH. Further, these results provide novel evidence of Fe(II)-Al LDHs precipitating on naturally-formed soil clay minerals as a minor phase to GR. The geochemical implications are that GRs formed in soils and sediments should be considered to have Al and Si as well as Mg substitutions affecting their structure and reactivity.

58 GEOSCIENCES↗
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2022

Additive manufacturing and testing of a ceramic heat exchanger for high-temperature and high-pressure applications for concentrating solar power

Heat exchangers with excellent corrosion and oxidation resistances are essential for the next-generation concentrating solar power (CSP) plants using a molten salt heat transfer fluid and a supercritical CO 2 Brayton power cycle that can operate at temperatures > 700 °C for higher efficiencies. Techniques were developed for additively manufacturing ceramic materials for applications involving high temperature, high pressure, and high corrosion resistance as needed for the CSP application. Based on a previous ceramic heat exchanger design with its cross-section geometry of the flow channels optimized for heat transfer and mechanical strength, lab-scale prototype heat exchangers, with integrated headers and incorporated flow channel dimensional compensations, were fabricated by using the binder jetting process. The printed prototype heat exchangers were successfully densified through the processes of liquid polymer infiltration and pyrolysis. In addition, thermophysical properties of the densified silicon carbide parts were measured to provide necessary design information. Experimental heat transfer testing of the lab-scale prototype heat exchanger was conducted, and the experimental data agreed reasonably well with the simulated results. Furthermore, this agreement provides validation of the simulation models for their applicability to the development of a full-scale ceramic heat exchanger.

14 SOLAR ENERGY↗
DOE OSTI2021

Synthesis of magnesiowüstite nanocrystallites embedded in an amorphous silicate matrix via low energy multiple ion implantations

The synthesis process is presented for experimentally simulating modifications in cosmic dust grains using sequential ion implantations or irradiations followed by thermal annealing. Cosmic silicate dust analogues were prepared via implantation of 20–80 keV Fe - , Mg - , and O - ions into commercially available p-type silicon (100)wafers. The as-implanted analogues are amorphous with a Mg/(Fe+Mg) ratio of 0.5 tailored to match theoretical abundances in circumstellar dusts. Before the ion implantations were performed, Monte-Carlo-based ion-solid interaction codes were used to model the dynamic redistribution of the implanted atoms in the silicon substrate. 600 keV helium ion irradiation was performed on one of the samples before thermal annealing. Two samples were thermally annealed at a temperature appropriate for an M-class stellar wind, 1000 K, for 8.3 h in a vacuum chamber with a pressure of 1 x 10 -7 torr. The elemental depth profiles were extracted utilizing Rutherford Backscattering Spectrometry (RBS) in the samples before and after thermal annealing. X-ray diffraction (XRD)analysis was employed for the identification of various phases in crystalline minerals in the annealed analogues. Transmission electron microscopy (TEM) analysis was utilized to identify specific crystal structures. RBS analysis shows redistribution of the implanted Fe, Mg, and O after thermal annealing due to incorporation into the crystal structures for each sample type. XRD patterns along with TEM analysis showed nanocrystalline Mg and Fe oxides with possible incorporation of additional silicate minerals.

79 ASTRONOMY AND ASTROPHYSICS↗