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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Templated Liquid-Phase Epitaxy of InP Structures on Si

We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2024

Effect of Silicon on High Temperature Oxidation of Fe-Cr-Si Alloys in Carbon Dioxide Environments

Supercritical carbon dioxide offers the potential for efficient and sustainable power generation. Identifying materials that can be used to construct the high temperature portions of the cycle is a barrier to developing this technology. Various Fe-Cr alloys have been identified as promising construction materials due to a favorable combination of high temperature strength, commercial availability, and cost. The effect of minor alloying elements, particularly Si, has been shown to significantly impact the oxidation and carburization processes for these alloys after relatively short duration exposures in hot carbon dioxide. The long-term impact is less understood, making it challenging to predict performance of real components that will be in service for many years. The objectives in this project are to better understand the long-term oxidation and carburization behavior of Fe-Cr alloys and the important role of Si; to enhance the existing body of literature on the long-term exposure of alloys to hot carbon dioxide; and enable lifetime predictions for future supercritical carbon dioxide power cycle components.

Menna, Valerie↗
DOE OSTI2024

Fully Fluorinated Local High Concentration Electrolytes Enabling High Energy Density Si Anodes

To develop fluorinated localized high concentration electrolytes as a novel approach for constructing a functional SEI on Si based anodes. The technological approach combines the SEI modification strategies of fluorinated carbonate solvents and local high concentration electrolytes. The resulting synergy of anion and fluorinated solvent decomposition will form a mechanically robust, fluorinated SEI that enables extended cycling with high capacity retention. The electrolytes will enable demonstration of silicon-graphite anodes with high Si content, paired with NMC811 cathodes. Characterization will focus on galvanostatic cycling to evaluate electrochemical performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

From Femtoseconds to Gigaseconds: The SolDeg Project to Analyze and Mitigate the Performance Degradation of a-Si:H/c-Si Heterojunction Solar Cells

We pursued two major projects. In the first, we studied the degradation of a-Si/c-Si Heterojunction cells. We substantially expanded our previously developed SolDeg platform, and incorporated hydrogen into it. We also expanded the capabilities of SolDeg by developing a three channel model for a very efficient way to determine long term junction dynamics. The first main result was that we identified hydrogen drifting away from the interface as a key degradation channel. The second was that we developed and proposed the concept of a “reverse silicon density gradient” in the a-Si layer that had the promise of reducing degradation by up to 80%. In the second project, we studied the degradation of TOPCon solar cells. We again identified a key degradation channel, which in these cells was the formation of pinholes across the oxide layer. We then again were able to develop and to propose a way to dramatically reduce degradation by discovering that tuning the hydrogen concentration forms a sharp and deep minimum of the recombination current.

14 SOLAR ENERGY↗
DOE OSTI2024

Synthesis of Si-Fe Chondrule-like Dust Analogues in RF Discharge Plasmas

Chondrules are tiny particles that occur in stony meteorites and are considered as the building blocks of early asteroids and planets. It is believed that they were formed by the fast heating of the dust in the solar nebula. To date, there is no lab-scale experimental study of the formation of chondrules from the initial gas phase precursors following fast heating and crystallisation. The motivation of this work is a pre-trial study of the formation of chnodrule-like particles. The formation of meteorites in the space environment is associated with the aggregation of small particles or molecular clouds under the influence of shock waves or high-energy gas discharges in the solar nebula. In this work, the properties of product formation at the nanoscale-level were investigated using different feedstock materials which are the dominant elements in the meteorite. The structural and morphological properties of the synthesised Si-Fe nanomaterials were analysed by scanning/transmission electron microscopy (SEM/TEM), and chemical composition was analysed by X-ray energy-dispersive spectroscopy (EDS). The identification of crystalline phases was carried out by X-ray diffraction (XRD), whereas the presence of an Fe-Si system in the synthesised particles was demonstrated by Mössbauer spectroscopy. The obtained materials were exposed to the relatively high-energy pulsed plasma beam on the substrate with the aim to emulate the possible fast heating and melting of the formed nanoparticles. The formation steps of growing synthetic (engineered) chondro-like particles and nanostructures in laboratory conditions is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Mechanical Behavior of Al–Al2Cu–Si and Al–Al2Cu Eutectic Alloys

In this study, laser rapid solidification technique was used to refine the microstructure of ternary Al–Cu–Si and binary Al–Cu eutectic alloys to nanoscales. Micropillar compression testing was performed to measure the stress–strain response of the samples with characteristic microstructure in the melt pool regions. The laser-remelted Al–Al2Cu–Si ternary alloy was observed to reach the compressive strength of 1.59 GPa before failure at a strain of 28.5%, which is significantly better than the as-cast alloy with a maximum strength of 0.48 GPa at a failure strain of 4.8%. The laser-remelted Al–Cu binary alloy was observed to reach the compressive strength of 2.07 GPa before failure at a strain of 26.5%, which is significantly better than the as-cast alloy with maximum strength of 0.74 GPa at a failure strain of 3.3%. The enhanced compressive strength and improved compressive plasticity were interpreted in terms of microstructural refinement and hierarchical eutectic morphology.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy

SiSn alloys have attracted growing interest for group-IV bandgap engineering, although their epitaxial growth remains challenging due to the extremely low equilibrium solubility of Sn in Si. In this work, fully strained (pseudomorphic) SiSn epitaxial layers were grown on Si (001) substrates by means of molecular beam epitaxy. A systematic investigation reveals a strong inverse correlation between growth temperature and Sn incorporation efficiency. Despite a constant Sn flux, the incorporated Sn composition decreases from 5.5% to 3.2% as the growth temperature increases, indicating a pronounced temperature dependence of Sn incorporation. Reflection high-energy electron diffraction indicates a gradual transition of the growth from two-dimensional to three-dimensional with increasing film thickness. Structural characterization by means of X-ray diffraction, atomic force microscopy, and transmission electron microscopy confirms the pseudomorphic growth and smooth surface morphology and reveals twins and stacking faults near the surface region. These results establish a quantitative reference for SiSn growth kinetics and provide guidance for future studies of SiSn and SiGeSn alloys in silicon-compatible electronic and optoelectronic applications.

SiSn alloys↗
DOE OSTI2023

Zagamiite, CaAl2Si3.5O11, the Hexagonal High-Pressure CAS Phase with Dominant Si, as a Mineral from Mars

Within the Ca-Al-silicate system, dense, layered hexagonal phases occur at high temperatures and pressures between 20 and 23 GPa. They have been observed both in nature and in experiments. In this study, we describe the endmember with a dominant sixfold coordinated Si as a mineral zagamiite (IMA 2015-022a). This new mineral identified in Martian meteorites has a general formula of (Ca,Na)(Al,Fe,Mg)2(Si,Al,□)4O11, thus defining CaAl2Si3.5O11 as a previously unknown endmember of the hexagonal CAS phases. Zagamiite assumes space group P63/mmc with a unit cell of a = 5.403(2) Å, c = 12.77(3) Å, V = 322.9(11) Å3, and Z = 2. Zagamiite contains significant Fe and Mg and a substantial deficit of Na relative to plagioclase of an equivalent Al/Si, suggesting that it was formed through crystallization from a melt that was derived from a plagioclase-dominant mixture of plagioclase and clinopyroxene above the solidus beyond 20 GPa.

Ma, Chi (ORCID:0000000218287033)↗
DOE OSTI2025

Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe 3 , 2H-TaS 2 , and Cr 2 Si 2 Te 6 Crystals

Electrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively manipulate many-body correlated states. Exploring their interplay and interdependence is crucial but remains underexplored. This review integratively cross-examines the atomic and electronic structures and transport properties of van der Waals-layered crystals ZrTe 3 , 2H-TaS 2 , and Cr 2 Si 2 Te 6 , providing a comprehensive understanding and uncovering new discoveries and insights. A common observation from these crystals is that modifying the atomic and electronic interface structures of 2D van der Waals interfaces using heteroatoms significantly influences the emergence and stability of coherent phases, as well as phase-sensitive transport responses. In ZrTe 3 , substitution and intercalation with Se, Hf, Cu, or Ni at the 2D vdW interface alter phonon–electron coupling, valence states, and the quasi-1D interface Fermi band, affecting the onset of CDW and SC, manifested as resistance upturns and zero-resistance states. We conclude here that these phenomena originate from dopant-induced variations in the lattice spacing of the quasi-1D Te chains of the 2D vdW interface, and propose an unconventional superconducting mechanism driven by valence fluctuations at the van Hove singularity, arising from quasi-1D lattice vibrations. Short-range in-plane electronic heterostructures at the vdW interface of Cr 2 Si 2 Te 6 result in a narrowed band gap. The sharp increase in in-plane resistance is found to be linked to the emergence and development of out-of-plane ferromagnetism. The insertion of 2D magnetic layers such as Mn, Fe, and Co into the vdW gap of 2H-TaS 2 induces anisotropic magnetism and associated transport responses to magnetic transitions. Overall, 2D vdW interface modification offers control over collective electronic behavior, transport properties, and their interplays, advancing fundamental science and nanoelectronic devices.

2D van der Waals interfaces↗
DOE OSTI2022

Polarization-dependent conversion efficiency of carbon nanotube-Si heterojunction solar cells based on aligned carbon nanotube films

We have fabricated solar cells that implement heterojunctions of Si and aligned carbon nanotube (CNT) films. Polarization-dependent optical absorption of highly aligned CNTs led to polarization-dependent conversion efficiencies, which in turn provided insight into the role of the CNT layer in the power generation mechanism in these heterojunction solar cells. When the incident light polarization was parallel to the CNT alignment direction so that the light absorption in the CNT layer was maximized, the short circuit photocurrent decreased by ~25%. This indicates that electron–hole pair generation in the CNT layer does not directly lead to power generation and that the CNT-Si heterojunctions in our devices are Schottky junctions rather than p–n junctions.

Physics↗
DOE OSTI2021

Chapmanite [Fe 2 Sb(Si 2 O 5 )O 3 (OH)]: thermodynamic properties and formation in low-temperature environments

Abstract. of synthetic Sb 2 O 5 , MgSb 2 O 6 (analogue of the mineral byströmite), Mg[Sb(OH) 6 ] 2 ∙6H 2 O (brandholzite), and natural chapmanite [(Fe 1.88 Al 0.12 )Sb(Si 2 O 5 )O 3 (OH)]. Enthalpies of reactions, including formation enthalpies, were evaluated using reference compounds Sb, Sb 2 O 3 , Sb 2 O 5 , and other phases, with high-temperature oxide melt solution calorimetry in lead borate and sodium molybdate solvents. Heat capacity and entropy were determined by relaxation and differential scanning calorimetry. The best set of Δ f H o (kJ mol -1 ) and S o (J mol -1 K -1 ) is byströmite -1733.0±3.6, 139.3±1.0; brandholzite -5243.1±3.6, 571.0±4.0; and chapmanite -3164.9±4.7, 305.1±2.1. The data for chapmanite give Δ f G o of -2973.6±4.7 kJ mol -1 and log K=-17.10 for the dissolution reaction (Fe 1.88 Al 0.12 )Sb(Si 2 O 5 )O 3 (OH) + 6H + → 1.88Fe 3+ + 0.12Al 3+ + 2SiO$_2^0$ + Sb(OH)$_3^0$ + 2H 2 O. Analysis of the data showed that chapmanite is finely balanced in terms of its stability with schafarzikite (FeSb 2 O 4 ) and tripuhyite (FeSbO 4 ) under a specific, narrow range of conditions when both aqueous Fe(III) and Sb(III) are abundant. In such a model, chapmanite is metastable by a narrow margin but could be stabilized by high SiO$_2^0$(aq) activities. Natural assemblages of chapmanite commonly contain abundant amorphous silica, suggesting that this mechanism may be indeed responsible for the formation of chapmanite. Chapmanite probably forms during low-temperature hydrothermal overprint of pre-existing Sb ores under moderately reducing conditions; the slightly elevated temperatures may help to overcome the kinetic barrier for its crystallization. During weathering, sheet silicates may adsorb Sb 3+ in tridentate hexanuclear fashion, thus exposing their chapmanite-like surfaces to the surrounding aqueous environment. Formation of chapmanite, as many other sheet silicates, under ambient conditions, is unlikely.

58 GEOSCIENCES↗
DOE OSTI2021

Dopant diffused Si surface passivation by H 2 S gas reaction and quinhydrone-methanol treatment

Phosphorus (n + ) and boron (p + ) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H 2 S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified by saturation current density (J 0 ), strongly depends on the diffusion type and the passivation method. H 2 S reaction at 550ºC passivates n + diffused surface as good as state-of-the-art Si oxide/silicon nitride stack (SiO 2 /SiN X ), while QH-MeOH passivates p + diffused surface to the same level as state-of-the-art atomic layer deposited aluminum oxide / silicon nitride stack (Al 2 O 3 /SiN X ).

Das, Ujjwal↗
DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV VocSi Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the performance analysis of a 22.5% efficient polysilicon on silicon oxide (poly-Si/SiOx) passivated contact solar cells with deliberately introduced pinholes using metal-assisted chemical etching (MACE) has been performed with the help of optical analysis using Sunsolve and electrical analysis using Quokka3. The power loss is maximum due to recombination and resistive losses in the bulk (~0.76 mW/cm2 ) followed by power loss due to rear contact recombination (~0.35 mW/cm2 ). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and efficiency has been investigated.

MACE↗
DOE OSTI2020

Materials Data on Si(Hg2S3)2 by Materials Project

Hg4SiS6 is Chalcostibite-like structured and crystallizes in the monoclinic Cc space group. The structure is three-dimensional. there are four inequivalent Hg2+ sites. In the first Hg2+ site, Hg2+ is bonded in a 5-coordinate geometry to five S2- atoms. There are a spread of Hg–S bond distances ranging from 2.58–3.30 Å. In the second Hg2+ site, Hg2+ is bonded to four S2- atoms to form HgS4 tetrahedra that share corners with two equivalent HgS4 tetrahedra and corners with two equivalent SiS4 tetrahedra. There are a spread of Hg–S bond distances ranging from 2.57–2.68 Å. In the third Hg2+ site, Hg2+ is bonded to four S2- atoms to form HgS4 tetrahedra that share corners with two equivalent HgS4 tetrahedra and corners with two equivalent SiS4 tetrahedra. There are a spread of Hg–S bond distances ranging from 2.56–2.74 Å. In the fourth Hg2+ site, Hg2+ is bonded in a 4-coordinate geometry to four S2- atoms. There are a spread of Hg–S bond distances ranging from 2.56–2.70 Å. Si4+ is bonded to four S2- atoms to form SiS4 tetrahedra that share corners with four HgS4 tetrahedra. There are a spread of Si–S bond distances ranging from 2.12–2.16 Å. There are six inequivalent S2- sites. In the first S2- site, S2- is bonded to four Hg2+ atoms to form corner-sharing SHg4 tetrahedra. In the second S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to two Hg2+ and one Si4+ atom. In the third S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to two Hg2+ and one Si4+ atom. In the fourth S2- site, S2- is bonded in a 3-coordinate geometry to three Hg2+ and one Si4+ atom. In the fifth S2- site, S2- is bonded to four Hg2+ atoms to form corner-sharing SHg4 tetrahedra. In the sixth S2- site, S2- is bonded in a 3-coordinate geometry to two Hg2+ and one Si4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Si(Hg2Se3)2 by Materials Project

Hg4SiSe6 is Chalcostibite-like structured and crystallizes in the monoclinic Cc space group. The structure is three-dimensional. there are four inequivalent Hg2+ sites. In the first Hg2+ site, Hg2+ is bonded in a 5-coordinate geometry to five Se2- atoms. There are a spread of Hg–Se bond distances ranging from 2.71–3.49 Å. In the second Hg2+ site, Hg2+ is bonded to four Se2- atoms to form HgSe4 tetrahedra that share corners with two equivalent SiSe4 tetrahedra and corners with five HgSe4 tetrahedra. There are a spread of Hg–Se bond distances ranging from 2.66–2.83 Å. In the third Hg2+ site, Hg2+ is bonded to four Se2- atoms to form HgSe4 tetrahedra that share corners with two equivalent SiSe4 tetrahedra and corners with five HgSe4 tetrahedra. There are a spread of Hg–Se bond distances ranging from 2.69–2.85 Å. In the fourth Hg2+ site, Hg2+ is bonded to four Se2- atoms to form distorted HgSe4 tetrahedra that share corners with two equivalent SiSe4 tetrahedra and corners with six HgSe4 tetrahedra. There are a spread of Hg–Se bond distances ranging from 2.69–2.84 Å. Si4+ is bonded to four Se2- atoms to form SiSe4 tetrahedra that share corners with six HgSe4 tetrahedra. There are a spread of Si–Se bond distances ranging from 2.28–2.31 Å. There are six inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to four Hg2+ atoms to form distorted corner-sharing SeHg4 trigonal pyramids. In the second Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to two Hg2+ and one Si4+ atom. In the third Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to two Hg2+ and one Si4+ atom. In the fourth Se2- site, Se2- is bonded in a 3-coordinate geometry to three Hg2+ and one Si4+ atom. In the fifth Se2- site, Se2- is bonded to four Hg2+ atoms to form corner-sharing SeHg4 tetrahedra. In the sixth Se2- site, Se2- is bonded in a 3-coordinate geometry to two Hg2+ and one Si4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Si(NiO2)2 by Materials Project

Ni2SiO4 is Spinel structured and crystallizes in the cubic Fd-3m space group. The structure is three-dimensional. Ni2+ is bonded to six equivalent O2- atoms to form NiO6 octahedra that share corners with six equivalent SiO4 tetrahedra and edges with six equivalent NiO6 octahedra. All Ni–O bond lengths are 2.08 Å. Si4+ is bonded to four equivalent O2- atoms to form SiO4 tetrahedra that share corners with twelve equivalent NiO6 octahedra. The corner-sharing octahedral tilt angles are 53°. All Si–O bond lengths are 1.67 Å. O2- is bonded in a rectangular see-saw-like geometry to three equivalent Ni2+ and one Si4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Si(NiO2)2 by Materials Project

Ni2SiO4 is Ilmenite-like structured and crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. there are two inequivalent Ni2+ sites. In the first Ni2+ site, Ni2+ is bonded to six O2- atoms to form NiO6 octahedra that share corners with eight NiO6 octahedra, corners with four equivalent SiO4 tetrahedra, edges with two equivalent NiO6 octahedra, and an edgeedge with one SiO4 tetrahedra. The corner-sharing octahedra tilt angles range from 51–61°. There are a spread of Ni–O bond distances ranging from 2.06–2.19 Å. In the second Ni2+ site, Ni2+ is bonded to six O2- atoms to form NiO6 octahedra that share corners with four equivalent NiO6 octahedra, corners with two equivalent SiO4 tetrahedra, edges with four NiO6 octahedra, and edges with two equivalent SiO4 tetrahedra. The corner-sharing octahedra tilt angles range from 56–61°. There are four shorter (2.09 Å) and two longer (2.13 Å) Ni–O bond lengths. Si4+ is bonded to four O2- atoms to form SiO4 tetrahedra that share corners with six NiO6 octahedra and edges with three NiO6 octahedra. The corner-sharing octahedra tilt angles range from 55–60°. There are a spread of Si–O bond distances ranging from 1.63–1.67 Å. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a rectangular see-saw-like geometry to three Ni2+ and one Si4+ atom. In the second O2- site, O2- is bonded in a distorted rectangular see-saw-like geometry to three Ni2+ and one Si4+ atom. In the third O2- site, O2- is bonded in a 4-coordinate geometry to three Ni2+ and one Si4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Si(Bi3O5)4 by Materials Project

Bi12SiO20 crystallizes in the cubic I23 space group. The structure is three-dimensional. Si4+ is bonded in a tetrahedral geometry to four equivalent O2- atoms. All Si–O bond lengths are 1.67 Å. Bi3+ is bonded in a 5-coordinate geometry to five O2- atoms. There are a spread of Bi–O bond distances ranging from 2.11–2.68 Å. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a 3-coordinate geometry to three equivalent Bi3+ atoms. In the second O2- site, O2- is bonded in a distorted single-bond geometry to one Si4+ and three equivalent Bi3+ atoms. In the third O2- site, O2- is bonded in a trigonal non-coplanar geometry to three equivalent Bi3+ atoms.

36 MATERIALS SCIENCE↗