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At least 523 records · Page 29

β -delayed charged-particle decay of Si 22 , 23

The β decay of 22,23 Si by emission of delayed charged particles was investigated in an experiment at the Cyclotron Institute of Texas A&M University by means of an optical-readout time-projection chamber. The previously-known decay of the two isotopes by β-delayed one- and two-proton emission was confirmed. Here for the first time, a new, rare, decay mode for 23 Si, β-delayed three-proton emission, was observed and β-delayed proton-α emission tentatively identified. Moreover, the β-decay pattern for the ground state of 23 Si was studied by means of multireference density-functional-rooted calculations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

First high-resolution γ-ray spectroscopy of 41 Si

The first high-resolution in-beam γ -ray spectroscopy is reported for the neutron-rich nucleus 41 Si, a tenant of the N = 28 island of inversion. Excited states were populated in the direct one-proton removal reaction from 42 P projectiles and pn removal from 43 P. Seven γ-ray transitions were observed, only one of which had been reported previously in the literature. Furthermore, this makes 41 Si the most neutron-rich odd-even N = 27 isotone with high-resolution excited-state information. For the one-proton removal, the measured partial cross-section distribution to all observed bound final states is contrasted with results from direct one-proton removal calculations that combine eikonal reaction dynamics with SDPF-MU shell-model spectroscopic factors and assume various possible initial states for the poorly known 42 P projectile. Rather distinct calculated cross-section distributions emerge that, in comparison to the new data, imply that the initial state in 42 P is most likely 3 – or 2 – rather than 1 – or 0 – , the predicted shell-model ground state of 42 P. It is further shown that the level scheme from the novel VS-IMSRG calculation closely agrees with the one of SDPF-MU, the most successful phenomenological shell-model effective interaction in describing the much discussed neighboring isotope 42 Si, perhaps cross-validating these complementary approaches on the quest to model rapid shell evolution away from the valley of β stability.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Atomistic Mechanism Underlying the Si ( 111 ) - ( 7 × 7 ) Surface Reconstruction Revealed by Artificial Neural-Network Potential

The 7×7 reconstruction of the Si(111) surface represents arguably the most fascinating surface reconstruction so far observed in nature. Yet, the atomistic mechanism underpinning its formation remains unclear after it was discovered sixty years ago. Experimentally, it is observed post priori so that analysis of its formation mechanism can only be carried out in analogy with archaeology. Theoretically, density-functional theory (DFT) correctly predicts the Si(111)-(7×7) ground state but is impractical to simulate its formation process; while empirical potentials failed to produce it as the ground state. Developing an artificial neural-network potential of DFT quality, we carried out accurate large-scale simulations to unravel the formation of the Si(111)-(7×7) surface. We reveal a possible step-mediated atom-pop rate-limiting process that triggers massive nonconserved atomic rearrangements, most remarkably, a critical process of collective vacancy diffusion that mediates a sequence of selective dimer, corner-hole, stacking-fault, and dimer-line pattern formation, to fulfill the 7×7 reconstruction. Our findings may not only solve the long-standing mystery of this famous surface reconstruction but they also illustrate the power of machine learning in studying complex structures.

36 MATERIALS SCIENCE↗

Magnetic and electron transport properties of Co 2 Si nanomagnets

In this study, magnetotransport and ferromagnetism in thin films of Co 2 Si nanoclusters are investigated experimentally and theoretically. The nanoclusters are fabricated by an inert-gas condensation-type cluster-deposition method and have an average size of 11.3 nm. Unlike the bulk Co 2 Si that exhibits a very weak net magnetic moment only below 10 K, the nanoclusters exhibit room-temperature ferromagnetism with a substantial saturation magnetization. Key features of the system are its closeness to the Stoner transition, magnetic moments induced by spin polarization starting from surface atoms, and nonuniaxial anisotropy associated with the orthorhombic crystal structure of Co 2 Si . A method is introduced to determine the effective anisotropy using the experimental magnetization data of this complex system and its relationship with the two lowest-order nonuniaxial anisotropy constants. On decreasing temperature from 300 K, the nanoclusters show electron-transport properties unusual for a ferromagnetic metal, including an increase of Hall resistivity and a nonmonotonic change of negative magnetoresistance with a peak at around 100 K. The underlying physics is explained on the basis of the large polarization of surface spins and variation in the degree of their misalignments due to temperature-dependent effective anisotropy.

36 MATERIALS SCIENCE↗

Unconventional magnetic order emerging from competing energy scales in the new R Rh 3 Si 7 intermetallics ( R = Gd-Yb)

The competition between Ruderman-Kittel-Kasuya-Yosida (RKKY), crystal electric field (CEF), and Kondo energy scales has recently emerged at the heart of complex magnetism in several Ce- or Yb-based intermetallics. Hard axis magnetic order has been observed in a handful of these compounds, independent of the crystal symmetry, size of the ordered moment, or the relative scale of the Kondo and magnetic ordering temperatures. This raises the question of the role of each energy scale in driving the ground state properties. In focusing on a single class of compounds, the rhombohedral RRh 3 Si 7 , we compare the anisotropy and magnetic ground states in members of this series with only RKKY interactions (R = Gd), or RKKY and CEF effects (R = Tb-Tm), with the behavior of the R = Yb compound, where all three energy scales (RKKY, CEF, Kondo) are at play. Moreover, we extend the comparison to two other isostructural Kondo systems YbIr 3 Si 7 and YbIr 3 Ge 7 , where hard axis magnetic order is also observed. The non-Kondo compounds RRh 3 Si 7 (R = Tb-Tm) lack the complexity of magnetic order along the hard CEF axis, pointing to the dominant role of the Kondo effect in driving this magnetic order. Furthermore, the CEF-RKKY competition is still responsible for complex magnetic ground states, and it appears that the electronic and magnetic degrees of freedom are entangled in all magnetic members of this series of compounds.

36 MATERIALS SCIENCE↗

Exploring the impact of Cr-doping on the crystallographic and magnetic structure of Mn 5 Si 3 antiferromagnetic alloy

Here, the role of Cr-doping on the structural and magnetic ground states of Mn 5 Si 3 alloy has been investigated through temperature-dependent neutron powder diffraction (NPD) and X-ray absorption fine structure (XAFS) techniques. All the Cr-doped alloys of nominal composition Mn 5-x Cr x Si 3 (for x = 0.05, 0.1, and 0.2) undergo two first-order magneto-structural phase transitions from hexagonal (space group: P6 3 /mcm) paramagnetic → orthorhombic (space group: Ccmm) collinear antiferromagnetic → orthorhombic (space group: Cc2m) non-collinear antiferromagnetic phase on cooling from room temperature. NPD studies at different constant temperatures indicate that both anti ferromagnetic phases are commensurate in nature and can be represented by q = (0,1,0) magnetic propagation vector for all the Cr-doped alloys. Such doping at the Mn-site results in a significant modification of the non-collinear antiferromagnetic structure (both moment size and orientation) and hence affects the unusual magnetic properties, like inverted hysteresis loop, thermomagnetic irreversibility, etc. The XAFS measurements were performed to interpret the local environment of doped Cr atoms in detail, which is critical for a microscopic understanding of the unusual properties of this class of Cr-doped Mn 5 Si 3 alloys. The analysis confirms the elemental state of Cr in the doped alloys and indicates a high degree of preservation of local crystallographic structure with varying Cr concentration and sample temperature. Doping induces intriguing changes in XAFS patterns, elucidated through different types of scattering mechanisms associated with the central absorbing Cr atom.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Slow ferromagnetic fluctuations in the kagome metal Sc 3 ⁢ Mn 3 ⁢Al 7 ⁢ Si 5 revealed by 27 Al NMR

Static and dynamical magnetic and electronic properties of the kagome metal Sc 3 ⁢Mn 3 ⁢ Al 7⁢ Si 5 have been investigated by 27 Al nuclear magnetic resonance (NMR) measurements. Two distinct 27 Al -NMR signals with two different values of quadrupolar frequencies of 𝜈 Q = 1.55(2) and 1.07(2) MHz are observed, which are assigned to Al(1) and Al(2), respectively. From the detailed NMR spectrum measurements under three different magnetic field directions and the density functional theory calculations, the principal axes of the electric field gradient for each Al site have been determined. The temperature dependence of Knight shift (𝐾) shows a similar temperature dependence of the DC magnetic susceptibility 𝜒 except for the low-temperature region below ∼50 K where 𝐾 is almost constant while 𝜒 keeps increasing, which suggests that the increase in 𝜒 at low temperatures is not intrinsic. 27 Al spin-lattice relaxation rate divided by temperature (1/𝑇 1 ⁢𝑇) is found to be constant, confirming the metallic state of Sc 3 ⁢Mn 3 ⁢ Al 7⁢ Si 5 from a microscopic point of view. Based on a Korringa ratio analysis using the 𝑇 1 and 𝐾 data, ferromagnetic fluctuations are found to dominate in Sc 3 ⁢Mn 3 ⁢ Al 7⁢ Si 5 . In conclusion, these fluctuations are suggested to be very slow with frequencies on the order of kilohertz or lower.

Ding, Qing-Ping [Ames Laboratory (AMES), Ames, IA ↗

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

14 SOLAR ENERGY↗

Luminescence from Poly-Si Films and its Application to Study Passivating-Contact Solar Cells

In recent years, polycrystalline silicon (poly-Si) based passivating-contact solar cells have received tremendous attention from the solar research community due to its excellent surface passivation and high carrier conductivity. However, the poly-Si films are not transparent to all wavelengths of the solar spectrum. There is often some parasitic absorption in these films. From a different standpoint, as they absorb some light, they can luminesce. This phenomenon provides us with unique opportunities to investigate optoelectronic properties of the films in a fast, contactless, and nondestructive manner. In this work, we report the luminescence phenomenon from poly-Si films used in passivating-contact solar cells. We then utilize this phenomenon to report a range of applications for solar cells including studies of carrier transport behaviors and hydrogenation inside the films.

14 SOLAR ENERGY↗

X-Ray and Particle Detection With the Si(Li) Tracker Module of the GAPS Experiment

Here, this work describes the architecture and the experimental results from the characterization of the lithium-drifted silicon (Si(Li)) detector module, which constitutes the building block of the tracker in the general antiparticle spectrometer (GAPS) experiment to search for dark matter. The instrument is designed for the identification of low-energy cosmic anti-nuclei (antiprotons, antideuterons, and antihelium) to be performed during an Antarctic long-duration balloon flight scheduled for late 2025. The GAPS Si(Li) tracker, that is the core of the instrument, is the assembly of 252 modules, each comprised of four Si(Li) detectors and a full custom-integrated circuit designed for detector readout and produced in a commercial 180-nm planar CMOS technology. A general overview of the detector module architecture and its components is provided, together with a description of the test setup and the experimental results obtained from the characterization of the low-noise analog readout channel. In order to verify the effective operation of the entire module, results concerning the detection of X-rays from a 241Am source and cosmic muons are also provided.

Manghisoni, Massimo [Università di Bergamo (Italy)↗

Raman spectroscopic characterization of SiO 2 phase transformation and Si substrate stress relevant to EBC performance

To accurately model the long-term durability of environmental barrier coatings (EBCs), a more complete understanding of the phase composition and transformations of the thermally grown oxide SiO 2 (TGO) is desired. For the TGO formed during thermal cycling in steam, cristobalite formation and the subsequent β- to α-cristobalite transformation has been identified as a potentially life-limiting mechanism. In this study, Raman micro-spectroscopy was used to quantify the cristobalite transformation on a polycrystalline Si coupon that was exposed to steam at 1350°C for 100 h. The phase transformation was mapped at 200–260°C on the TGO surface at different ramp rates using a heating stage and a micro-positioning stage. The stress in the Si substrate was also determined using Raman spectroscopy by measuring the stress induced peak shift. The α→β phase transformation produced a 300–500 MPa tensile stress in the Si substrate, which compared well to the stress predicted from the volumetric expansion of the cristobalite. In conclusion, quantifying the phase transformation and residual stress are critical tools in developing the next generation of high performance EBCs.

36 MATERIALS SCIENCE↗

Performance and Emissions of an SI Engine Fueled With DME-Propane Blends

Dimethyl Ether (DME) is an alternative fuel that can be produced renewably and has the potential for lower CO and NOx emissions than conventional petroleum-based fuels. Blending DME with another gaseous fuel such as propane, which has a lower knock tendency than gasoline, can allow this fuel to be leveraged on SI engines. In this study, the use of DME-propane blends on a spark ignition (SI) engine was studied via computer simulations in order to understand the impact on engine performance and emissions and to identify the knock limitations of using such fuel blends. A 2L Hyundai SI engine was modeled in GT Power and the model was validated by comparing it with computational fluid dynamics (CFD) simulation results. Starting from pure propane, DME was added incrementally until knock was observed in the engine. Results indicate that it is feasible to run propane with DME percentages up to 35% before severe knock impacts were observed. The BTE was higher, but the BSFC also increased for DME-propane blends as compared to gasoline. Here, an increase in NOx emissions was detected along with a significant decrease in CO emissions. CO 2 emissions declined for propane as compared to gasoline but increased with the addition of DME.

alternative fuels↗

Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. II. Surface reaction mechanism

Developing processes for highly selective etching of silicon nitride (Si 3 N 4 ) with respect to silicon dioxide (SiO 2 ) is a major priority for semiconductor fabrication processing. In this paper and in Paper I [Volynets et al., J. Vac. Sci. Technol. A 38, 023007 (2020)], mechanisms are discussed for highly selective Si3N4 etching in a remote plasma based on experimental and theoretical investigations. The Si 3 N 4 /SiO 2 etch selectivity of up to 380 was experimentally produced using a remote plasma sustained in NF 3 /N 2 /O 2 /H 2 mixtures. A selectivity strongly depends on the flow rate of H 2 , an effect attributed to the formation of HF molecules in vibrationally excited states that accelerate etching reactions. Based on experimental measurements and zero-dimensional plasma simulations, an analytical etching model was developed for etch rates as a function of process parameters. Reaction rates and sticking coefficients were provided by quantum chemistry models and also fitted to the experimental results. Etch rates from the analytical model show good agreement with the experimental results and demonstrate why certain etchants accelerate or inhibit the etch process. In particular, the modeling shows the important role of HF molecules in the first vibrationally excited state [HF( v = 1)] in achieving high Si 3 N 4 /SiO 2 selectivity.

42 ENGINEERING↗

Electrochemical Dilatometry of Si-Bearing Electrodes: Dimensional Changes and Experiment Design

The severe volumetric changes in Si particles during the Li (de)alloying process cause expansion and contraction of the electrodes, which along with excessive electrolyte reduction and solid electrolyte interphase formation brings about rapid decay in cell capacity. In this work, we use operando electrochemical dilatometry to quantify the (de)lithiation-induced expansion/contraction of Si-based and graphite-rich electrodes during electrochemical cycling. We evaluate the relationship between electrode capacity and dilation and observe that by increasing the Si contribution to the electrode capacity, the swelling is aggravated upon lithiation. For silicon-rich anodes, the electrode dilation can be higher than 300%, and the expansion profile consists of a combination of slow swelling at low lithiation followed by an accelerated increase at higher lithium contents. We investigate how electrode properties, such as porosity, affect the dilation profile and quantify the irreversible expansion of the electrodes. Finally, we discuss some of the challenges associated with the dilatometry technique and suggest experimental approaches for obtaining consistent and reliable data.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrolyte Role in SEI Evolution at Si in the Pre-lithiation Stage vs the Post-lithiation Stage

The formation and evolution of the dynamic solid electrolyte interphase (SEI) at the Si anode/electrolyte interface are yet to be completely understood to solve irreversible capacity loss and increase battery cycle life. Herein, the evolution of SEI and its dynamic properties at the Si anode/electrolyte interface are investigated in two electrolyte systems, a 1.2 M LiPF6 in EC: EMC 3:7 (wt%) electrolyte (referred to as Gen2) and a 1.2 M LiTFSI in EC: EMC 3:7 (wt%) electrolyte (referred to as LiTFSI). Two lithiation stages are studied: the pre-lithiation (pre-Li) SEI stage and the post-lithiation (post-Li) stage. Findings reveal at the pre-Li, SEI formation starts at an early potential and contributes to the greater mass gain in the Si/Gen2, and it is dominated by the formation of a non-uniform F- and P-rich layer in Si/Gen2, in contrast to a homogeneous F- and C-containing layer at the Si/LiTFSI interphase. The initially formed SEI in LiTFSI further benefits the charge transfer kinetics. At the post-Li stage, a more substantial SEI evolution is observed at Si/LiTFSI. This paper offers a foundational understanding of the SEI dynamic evolution with electrolyte dependence. Findings from this report offer important insights into solving the complex SEI stability issues on Si.

25 ENERGY STORAGE↗

Significant Improvements to Si Calendar Lifetime Using Rapid Electrolyte Screening via Potentiostatic Holds

Silicon-based lithium-ion batteries exhibit severe time-based degradation resulting in poor calendar lives. This has been identified as the major impediment towards commercialization with cycle life considered a solved issue through nanosizing and protective coatings allowing over 1000 cycles of life to be achieved. In this work, rapid screening of sixteen electrolytes for calendar life extension of Si-rich systems (70 wt% Si) is performed using the voltage hold (V-hold) protocol. V-hold significantly shortens the testing duration over the traditional open circuit voltage reference performance test allowing us to screen electrolytes within a span of two months. We find a novel ethylene carbonate (EC) free electrolyte formulation containing lithium hexafluorophosphate (LiPF 6 ) salt, and binary solvent mix of fluoroethylene carbonate (FEC), ethyl methyl carbonate (EMC) that extends calendar life of Si cells as compared to conventional EC based electrolyte. Our coupled experimental-theoretical analysis framework provides a decoupling of the parasitic currents during V-hold, allowing us to extrapolate the capacity loss to predict semiquantitative calendar lifetimes. Subsequently, cycle aging and oxidative stability tests of the EC free system also show enhanced performance over baseline electrolyte.

25 ENERGY STORAGE↗

Survey of Use Cases and Scenarios on the Open Energy Data Initiative Solar Systems Integration (OEDI SI) Platform

The Open Energy Data Initiative Solar Systems Integration (OEDI SI) Data and Modeling Platform offers a comprehensive set of use cases tailored for power systems analysis. Each use case is centered around a specific power system analysis problem, supported by composite input data and reference algorithms. These composite input datasets are meticulously assembled using OEDI SI's data preprocessing tools, which integrate raw data from various sources. The primary objectives of the OEDI SI Platform include facilitating access to composite input data through widely accepted input/output formats and verified results. This accessibility enables power system network researchers and developers to validate their algorithms and showcase their applications' capabilities to the broader community. Moreover, the platform strives to promote reproducible, robust, replicable, and generalizable solar systems integration research.

14 SOLAR ENERGY↗