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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Measurements of recombination of electrons with H3O(plus)-(H2O)n series ions

Recombination coefficients of electrons with ions of the hydrated hydronium ion series (H3O(+))(H2O)n, where n = 0, 1, 2, 3, 4, 5, 6, were determined with a microwave afterglow/mass spectrometer apparatus. Afterglow measurements of electron density decays in helium-water vapor mixtures are correlated with the decay of mass-identified ion currents to the wall of the microwave cavity. By varying the temperature of the gas and the partial pressure of the water vapor in the mixture, different groups of hydronium series ions are made to dominate the afterglow.

Leu, M. T.↗
NASA NTRS1972

6300 A quantum efficiency of the recombination mechanism in the night-time F layer.

Simultaneous airglow and electron content measurements made at Hawaii are used to infer the number of 6300 and 6364 A quanta produced per electron lost in the nighttime F layer of the ionosphere. The equation of continuity of electrons is then solved numerically to obtain the electron density profile, and the amount of quenching is estimated. This leads to the number of excitations of O(super-1 D) per O2(+) recombination (epsilon). We find, for an exospheric temperature of 1100 K, epsilon is equal to 1.1 plus or minus 0.6, in good agreement with Zipf's laboratory measurement at 300 K.

Brown, W. E.↗
NASA NTRS1972

Radiative transition probabilities and recombination coefficients of the ion C IV.

Bound-bound and bound-free radiative transition probabilities, as well as radiative recombination coefficients of the ion C IV, are computed with a semi-empirical polarization potential method. The nonhydrogenic probabilities and coefficients are given for all bound states of the ion up to the principal quantum number n = 7.

Leibowitz, E. M.↗
NASA NTRS1971

Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Johnson, E. S.↗
NASA NTRS1972

Kinetics of O/super 3P/ + CO + M recombination.

Measurement of rate coefficients over the temperature range from 250 to 370 K for the three-body recombination of O(super 3P) with CO. Earlier results at 300 K have been re-evaluated and were found to have been influenced by unknown impurities in the CO, which have now been removed by more elaborate purification methods. For CO as the third body, the rate constant is given by K = 6.5 x 10 to the minus 33rd exp (-4340 plus or minus 550/RT) cm to the 6th power per sq molecule per sec. For N2 and CO2, the 296 K rate constants are 2.3 and 6.2 x 10 to the minus 36th cm to the 6th power per sq molecule per sec, respectively.

Slanger, T. G.↗
NASA NTRS1972

Low temperature recombination and trapping analysis in high purity gallium arsenide by microwave photodielectric techniques

Some physical theories pertinent to the measurement properties of gallium arsenide are presented and experimental data are analyzed. A model for explaining recombination and trapping high purity gallium arsenide, valid below 77 K is assembled from points made at various places and an appraisal is given of photodielectric techniques for material property studies.

Khambaty, M. B.↗