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Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.
Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.
Results of running key station data (soil, air, and dew point temperatures, net irradiation, and wind direction and speed) from Michigan through the P-model are presented. The details of each of the 55 error calculations are shown in tables. A histogram is included showing errors in degrees Fahrenheit.
Trace and minor element distributions in the iron meteorites are generally ascribed to partitioning during solidification of the parent body core or to partial melting within the parent body. A model involving fractional crystallization is considered. The model cannot account for differences between the measured values for the slopes on the log Ir-log Ni plots and the slopes predicted using experimentally determined distribution coefficients obtained in an investigation conducted by Goldstein and Friel (1978). The model has also other weaknesses. Part of the answer concerning the existing problems was provided by Narayan and Goldstein (1981, 1982). The present investigation is concerned with a further clarification of the effect of the minor elements P, S, and C on the distribution behavior of trace elements. Attention is given to measurements of the distribution coefficients for various elements (Ir, Ge, Ga, Au, Cu, Cr) in the presence of these minor elements.
The variation of maximum earthquake size along the subduction zones has been interpreted as a variation in the seismic coupling ostensibly related to the mechanical conditions of the fault zone. Great differences are noted between the seismographs of the three great earthquakes whose rupture processes are presently considered: in the Kurile Islands (1963), The Rat Islands (1965) and Alaska (1964). On-scale long period P waves were recorded in all cases. Source time functions are deconvolved from the observed periods. It is concluded that maximum earthquake size is related to the asperity distribution on the fault. The subduction zones with the largest earthquakes have very large asperities, as in the Alaskan case, while the zones with the smaller great earthquakes, such as the Kurile Islands, have smaller scattered asperities.
Differential electron-scattering cross sections for inelastic excitation of an ion have been measured for the first time. Experiments were carried out in a cross electron-ion beam geometry for the 4(2)S yields 4(2)P transition in Zn II at 75 eV. In addition, differential cross sections were calculated at energies between 15 and 100 eV in a five-state close-coupling approximation in which 4s, 4p, 3d(9)4s(2), 5s, and 4 d states were included. Agreement in shape between theory and experiment at 75 eV is excellent.
A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.
This paper describes the fabrication of solar cells made by a simple open tube p(+)-diffusion into bulk n-GaAs. In addition, cell performance is provided as an indicator of the quality of bulk GaAs for this application. Initial results using this technique (12.2 percent efficiency at AM1 for 0.5 sq cm cells) are promising, and indicate directions for materials improvement. It is shown that the introduction of the diffusant (zinc) with point defects significantly affects the material properties and results in an increase in current capability.
The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.
Samples of Pd(40)Ni(40)P(20) glass, produced by cooling the melt at 1 or 800 K/s, are heated in a differential scanning calorimeter to determine the crystallization kinetics. Optical microscopy shows that eutectic crystallization proceeds both by growth from the surface of the samples and by the growth of spherical regions around preexisting nuclei in the interior. A modified Kissinger (1957) analysis is used to obtain the activation energy for crystal growth (3.49 eV). The steady state homogeneous nucleation frequency at 590 K is about 10 million/cu m per sec. This is estimated to be the maximum nucleation frequency: it is too low to account for the observed population of quenched-in nuclei, which are therefore presumed to be heterogeneous. The major practical obstacle to glass formation in this system is heterogeneous nucleation.
Over 1400 seismograms of earthquakes in Mexico are analyzed and data sets for the travel time, apparent phase velocity, and relative amplitude information are utilized to produce a tightly constrained, detailed model for depths to 900 km beneath an active oceanic ridge region, the Gulf of California. The data are combined by first inverting the travel times, perturbing that model to fit the p-delta data, and then performing trial and error synthetic seismogram modelling to fit the short-period waveforms. The final model satisfies all three data sets. The ridge model is similar to existing upper mantle models for shield, tectonic-continental, and arc-trench regimes below 400 km, but differs significantly in the upper 350 km. Ridge model velocities are very low in this depth range; the model 'catches up' with the others with a very large velocity gradient from 225 to 390 km.
A preliminary comparison is made of the observed frequencies of 5 min P modes with theoretical frequencies for a traditional solar model. The differences between observations and theory can be understood qualitatively in terms of two separate sources of error in the frequency calculation, one near the solar surface and the other at the base of the convection zone. There is no indication of errors in the deep interior of the model.
An analysis was performed on the P-format computer compatible tapes for the Landsat-4 Thematic Mapper (TM) scene 40109-15140 acquired November 2, 1982 over Washington, D.C. and environs. Three tests of sensor geometry were undertaken: (1) band-to-band registration, (2) line-to-line registration between swaths, and (3) geometric correction of sensor and spacecraft/ephemeris characteristics. The band-to-band and line-to-line registration was measured at one hundred pixel spacings along a line using the phase correlation image alignment method developed by Kuglin and Hines and adapted to a one-dimensional FFT correlation technique. The sensor and spacecraft geometric calibration analysis was checked by identifying 75 ground control points in the TM scene and on 1:24,000 topographic maps. A least squares fit of the gaps was computed and the vector offsets of the residuals was tabulated and plotted.
An algorithm is presented for efficient p-iterative solution of the Lambert/Gauss orbit-determination problem using second-order Newton iteration. The algorithm is based on a universal transformation of Kepler's time-of-flight equation and approximate inverse solutions of this equation for short-way and long-way flight paths. The approximate solutions provide both good starting values for iteration and simplified computation of the second-order term in the iteration formula. Numerical results are presented which indicate that in many cases of practical significance (except those having collinear position vectors) the algorithm produces at least eight significant digits of accuracy with just two or three steps of iteration.
Recently it has been pointed out that the saturation current of a semiconductor filament which constitutes part of a p-n junction diverges when the surface recombination velocity at the faces become infinitely large. Here it is pointed out that this is to be expected on physical grounds since, whenever the carrier concentration is kept off equilibrium by an outside agent, and at the same time recombination lifetimes in the bulk or in surface layers tend to zero, concentration gradients tend to infinity. As also previously noted, the situation can be remedied by using realistic (finite) surface recombination velocities in model calculations. However, this procedure leads to mathematical complexities which have been circumvented recently by the introduction of a heuristic approach. It is the aim of this paper to assess the validity of the heuristic approach by means of detailed and exact calculations.
A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.
The molecular ion H3O(+) is predicted to be an important component of the gas phase of interstellar clouds where it is calculated to be one of the most abundant molecular ions. Its detection would provide an indirect method of determining the abundance of the crucial species H2O. This fundamental molecule has no convenient low-lying transitions in the microwave or millimeter regions of the spectrum which can be excited under the normal low temperature conditions present in the interstellar medium. It is believed that the P(2,1) transition of H3O(+) in absorption at a frequency of 307 192.41 (5) MHz has been detected. The H3O(+) ion was produced in a magnetically enhanced negative glow discharge source.
The rigid lattice adsorbate vibrational frequency normal to the surface, omega(e,r) and height above the surface, R(transverse), are computed for p(2 x 2) (0.25 ML) and c(2 x 2) (0.5 ML) coverages of Cl and F. These calculations show a small change in omega(e,r) and a small increase in R(transverse) with increased coverage. The bonding of Cl and F is compared to that found for O and S, both of which show a decrease in R(transverse) and O which shows a larger shift in omega(e,r).