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At least 523 records · Page 29

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NASA NTRS1993

The EET87513 clast N: A CM2 fragment in an HED polymict breccia

Xenoliths of material resembling carbonaceous chondrites have been found in several HED polymict breccias. Most workers concluded that these clasts are related to CM2 meteorites on the basis of texture, bulk composition, and mineralogy. Data on clast N, a carbonaceous chondrite fragment from the howardite EET87513 large enough (approximately 4x5mm on the surface of the slab from which it was separated) to extract bulk samples for INAA and oxygen isotope analysis and to provide a thin section for electron microprobe, SEM, and TEM analysis is reported. Preliminary data for this clast were previously reported. INAA was performed at Oregon State University and bulk oxygen isotopic composition was determined at the University of Chicago. These data confirm that EET87513 clast N is a fragment of CM2 material.

Buchanan, P. C.↗

NASA NTRS1993

Cryogenic measurements of aerojet GaAs n-JFETs

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

Goebel, John H.↗

NASA NTRS1993

Looking for O(N) Navier-Stokes solutions on non-structured meshes

Multigrid methods are good candidates for the resolution of the system arising in Numerical Fluid Dynamics. However, the question is to know if those algorithms which are efficient for the Poissan equation on structured meshes will still apply well to the Euler and Navier-Stokes equations on unstructured meshes. The study of elliptic problems leads us to define the conditions where a Full Multigrid strategy has O(N) complexity. The aim of this paper is to build a comparison between the elliptic theory and practical CFD problems. First, as an introduction, we will recall some basic definitions and theorems applied to a model problem. The goal of this section is to point out the different properties that we need to produce an FMG algorithm with O(N) complexity. Then, we will show how we can apply this theory to the fluid dynamics equations such as Euler and Navier-Stokes equations. At last, we present some results which are 2nd-order accurate and some explanations about the behavior of the FMG process.

Morano, Eric↗

NASA NTRS1994

The propagation of spark-produced N waves through turbulence

A model experiment was designed and built to simulate the propagation of sonic booms through atmospheric turbulence. The setup of the model experiment is described briefly. Measurements of the N waves after they propagated across the turbulent velocity field reveal the same waveform distortion and change in rise time as for sonic booms. The data from the model experiment is used to test sonic boom models. Some models yield predictions for the waveform distortion, while others give estimates of the rise time of the sonic booms. A new theoretical model for the propagation of plane N waves through a turbulent medium is described.

Lipkens, Bart↗

NASA NTRS1994

On k-ary n-cubes: Theory and applications

Many parallel processing networks can be viewed as graphs called k-ary n-cubes, whose special cases include rings, hypercubes and toruses. In this paper, combinatorial properties of k-ary n-cubes are explored. In particular, the problem of characterizing the subgraph of a given number of nodes with the maximum edge count is studied. These theoretical results are then used to compute a lower bounding function in branch-and-bound partitioning algorithms and to establish the optimality of some irregular partitions.

Mao, Weizhen↗

NASA NTRS1994

Radiation effects on p+n InP junctions grown by MOCVD

The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

Messenger, Scott R.↗

NASA NTRS1994

Annealing of irradiated n+p InP buried homojunctions

At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

Walters, Robert J.↗

NASA NTRS1994

New detections of interstellar HNO at 2 and 1.2 millimeters: More N-O bonds

The 2(sub 02) to 1(sub 01) and 3(sub 03) to 2(sub 02) transitions of HNO at 163 and 244 GHz have been detected toward several molecular clouds. In conjunction with previous measurements of the 1(sub 01) to 0(sub 00) line at 81 GHz, these observations secure the identification of interstellar HNO. The 2(sub 02) to 1(sub 01) transition of this species has been detected toward NGC 2024, Sgr B2 (NW), W51M, and Dr 21 (OH), while the 3(sub 03) to 2(sub 02) line at 1.2 mm was observed only in NGC 2024. Typical column densities of HNO observed toward these sources are N(sub tot) approximately 10(exp 12) to 10(exp 14)/sq cm, corresponding to fractional abundances of f(sub HNO) approximately 10(exp -11) to 10(exp -10). These values imply NO/HNO ratios of approximately 100 to 800. Both the HNO fractional abundances and NO/HNO ratios are in reasonable agreement with predictions of ion-molecule-type models of interstellar chemistry, provided early-time calculations are used. Such behavior contrasts with that of other nitrogen compounds, whose observed abundances are best duplicated by steady-state calculations. The chemistries of HNO and NO are thus likely to be related. These observations also suggest that interstellar N-O bonds may be more common than previously thought.

Ziurys, L. M.↗

NASA NTRS1994

Detection of interstellar N2O: A new molecule containing an N-O bond

A new interstellar molecule, N2O, known as nitrous oxide or 'laughing gas,' has been detected using the NRAO 12 m telescope. The J = 3 - 2, 4 - 3, 5 - 4, and 6 - 5 rotational transitions of this species at 75, 100, 125, and 150 GHz, respectively, were observed toward Sgr B2(M). The column density derived for N2O in this source is N(sub tot) approx. 10(exp 15)/sq. cm, which corresponds to a fractional abundance of approx. 10(exp -9), relative to H2. This value implies abundance ratios of N2O/NO approx. 0.1 and N2O/HNO approx. 3 in the Galactic center. Such ratios are in excellent agreement with predictions of ion-molecule models of interstellar chemistry using early-time calculations and primarily neutral-neutral reactions. N2O is the third interstellar molecule detected thus far containing an N-O bond. Such bonds cannot be so rare as previously thought.

Ziurys, L. M.↗

NASA NTRS1994

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

EPITAXIAL LAYER↗

NASA NTRS1995

Transition probabilities for the UV0.01 multiplet in N III

We report on large-scale ab initio multiconfiguration Hartree-Fock calculations for the UV0.01 multiplet, 2s(sup 2)2p(sup 2)P(sub J) - 2s2p(sup 2 4)P(sub J prime), in N III. The resulting transition probabilities agree very well with recent semiempirical calculations, and the lifetimes for two of the three upper levels agree with experiments. The deviation for the third level is discussed. Comparisons made with the highest quality IUE echelle spectra available -- those of RR Tel and V1016 Cyg (both photoionized sources with electron densities below 10(exp 8)/cu cm) -- show that computed branching ratios of lines sharing a common upper level are in agreement with observations to within uncertainties of +/- 10%. High-quality solar limb data or stellar data from the Hubble Space Telescope (HST) could, in principle, be used to determine whether the theoretical or measured lifetimes for the discrepant level are in error. Unfortunately, stellar data for high-density plasmas (N(sub e) greater than 10(exp 11)/cu cm are needed) do not yet exist, and existing solar data lack the photometric precision to address this problem.

Brage, Tomas↗

NASA NTRS1995

N-Consecutive-Phase Encoder

N-consecutive-phase encoder (NCPE) is conceptual encoder for generating alphabet of N consecutive full-response continuous-phase-modulation (CPM) signals. Enables use of binary preencoder of higher rate than used with simple continuous-phase encoder (CPE). NCPE makes possible to achieve power efficiencies and bandwidth efficiencies greater than conventional trellis coders with continuous-phase frequency-shift keying (CPFSK).

Divsalar, Dariush↗

NASA NTRS1995

N-Butane To Replace Trichlorotrifluoroethane

According to proposal, trichlorotrifluoroethane replaced by n-butane as solvent for removal of oils, greases, hydraulic fluids, and other oily surface contaminants. N-butane candidate is replacement fluid because physical and chemical properties relevant to use as solvent similar to corresponding properties of trichlorotrifluoroethane. Considerably less expensive. Major disadvantage is flammability. As in cases of other hydrocarbon fluids, flammability hazard minimized by engineering controls.

Biesinger, Paul H.↗

NASA NTRS1997

Charge Transfer Between Ground-State N(2+) and H2, N2, and CO at Electron-Volt Energies

The charge-transfer rate coefficients for reactions of N(2+)(2 S(sup 2)2p(sup 2)P(sup 0)) with H2, N2, and CO are measured using ion storage. A cylindrical rf ion trap was used to store N(2+) ions produced by laser ablation of a solid titanium nitride target. The rate coefficients were derived from the decay rate of the ion signal. The rate coefficients for the above three reactions are 3.38(0.35) x 10(exp -11)sq sm/s at T(sub equiv.)=2.9 x 10(exp 3) K, 2.10(0.18) x 10(exp -9)sq sm/s at T(sub equiv.) = 1.3 x 10(exp 4) K, and 3.37(0.29) x 10(exp -9)sq cm/s at T(sub equiv.) = 1.3 x 10(exp 4) K, respectively. No theoretical or other experimental values are available at this energy range.

Fang, Z.↗

NASA NTRS1997

Electron-Temperature Dependence of the Recombination of NH4(+)((NH3)(sub n) Ions with Electrons

The two-body recombination of NH4(+)(NH3)(sub 2,3) cluster-ions with electrons has been studied in an afterglow experiment in which the electron temperature T, was elevated by radio-frequency heating from 300 K up to 900 K. The recombination coefficients for the n = 2 and n = 3 cluster ions were found to be equal, alpha(sub 2, sup(2)) = alpha(sub 3, sup(2)) = (4.8 +/- 0.5) x 10(exp - 6)cu cm/s, and to vary with electron temperature as T(sub c, sup -0.65) rather than to be nearly temperature-independent as had been inferred from measurements in microwave-heated plasmas.

Skrzypkowski, M. P.↗

NASA NTRS1961

Sputtering of Metals by Mass-Analyzed N2(+) and N(+)

Low-energy sputtering studies were conducted with the help of a specially designed ion accelerator. A high-intensity rf ion source was developed for use in conjunction with electrostatic acceleration and magnetic mass separation of ion beams in the 0 to 8 kev energy range. Beams of N(+) or N2(+) ions have been produced with intensities of 200 to 500 micro-a (approx. 1 sq cm in cross section) and energy half-widths of about 20 ev. The sputtering yields of five metals (Cu, Ni, Fe, Mo, and W) were obtained as a function of energy (0-8 kev), bombarding ion (N(+) and N2(+)), and angle of incidence (normal and 450). Results are presented and some of their theoretical implications are discussed.

Bader, Michel↗

NASA NTRS1998

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗

NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(sub s)) as a function of initial ON-state forward current (I(sub f)) and OFF-state reverse current (I(sub R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(sub p)) calculated from plots of t(sub s) vs I(sub R)/I(sub F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting tau(sub p) as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 square mm. The bulk minority carrier (hole) lifetime extracted from the 1/Tau(sub p) vs P/A plot is approximately 0.7 microns, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗