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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Attrition Modeling and Data Science: A Real-World Application of Logistic Regression Via A Masked Business Problem.
Abstract not provided.
Silent-Error Detection Local Recovery and Failure Masking in MPI-Based Solvers.
Abstract not provided.
High Resolution Fast-Neutron Time-Encoded Imaging using an Asymmetric Mask.
Abstract not provided.
Developing Multi-line FLEET using Periodic Mask Design.
Abstract not provided.
Conductive strip based mask for metallization of semiconductor devices
Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell.
Effects of Physical Masking on Sensitive Signatures
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Preparing for the Next Generation of EUV Lithography at the Center for X-ray Optics
The introduction of EUV lithography into high-volume semiconductor manufacturing this year represents a monumental milestone for EUV technology. After nearly 30 years of development, the EUV research community has overcome many of the key obstacles required to enable the long-awaited integration of EUV lithography into the lab. These obstacles have included: the development of a stable, high-powered EUV source to ensure adequate exposure tool reliability; controlling EUV mask defects and mask contamination; and the development of EUV resists with adequate sensitivity, resolution, and line width roughness to meet the tolerances required for high-volume manufacturing. As EUV moves into its second generation, there will be new challenges facing the community as it works to push EUV technology into the future. Smaller feature sizes will be achieved using higher numerical aperture optics, which are planned to have an anamorphic geometry (asymmetric magnification and numerical aperture between horizontal and vertical axes) to overcome 3D effects at the mask. This new geometry and its larger angle ranges make understanding mask absorber and multilayer effects all the more important. New methods for high-NA wavefront metrology need to be tested to ensure that these optical systems can be aligned to operate with minimal aberrations. Mask defects need to continue to be studied, and the inclusion of EUV pellicles in the roadmap requires that mask inspection and review systems adapt accordingly. Finally, new resists must be developed to support the increased resolution of feature sizes below 8 nm half pitch. The Center for X-ray Optics (CXRO) at Berkeley Lab has been a leader in EUV research for the past 25 years. Leveraging 13.5 nm EUV light from the Advanced Light Source synchrotron facility, CXRO is home to several EUV and soft X-ray (SXR) research tools that have provided important insights into EUV resists, masks, and coatings. The 0.3 NA Microfield exposure tool (MET) and Dose Calibration Tool (DCT) have played an instrumental role in the development of the current generation of high-resolution EUV resists. The Actinic Inspection Tool (AIT) and its successor, SHARP, have enabled aerial image analysis, providing key insights into mask defects, 3D mask effects, illumination, and aberrations. And the CXRO Reflectometer continues to be the industry standard in multilayer coating and EUV mask scattering metrology. To address the new challenges facing the next generation of EUV lithography, CXRO has upgraded its suite of EUV research tools. The 0.5 NA MET5 is a newly commissioned projection lithography tool that is capable of printing feature sizes down to 8 nm half pitch. A new radiation chemistry program is deploying several techniques aimed at dissecting the role of primary photoelectrons and secondary electrons in EUV resists. The SHARP microscope has been outfitted with anamorphic zone plate lenses that can emulate the geometry of next-generation EUV scanners, and the reflectometer has been applied to new scattering experiments for the purpose of understanding the 3D effects of EUV mask multilayers, as well as determining mask properties using scattering profiles. In parallel with these tools, the CXRO High-NA Wavefront Sensing Program is developing high-resolution wavefront sensors suitable for measuring aberrations at high NA. This article presents an overview of these programs and describes how they will address the primary challenges that face the EUV community as it moves to the next generation of EUV lithography.
FastrSHWFS Analysis
This code analyzes the reflection geometry of modified Shack-Hartmann Wavefront Sensor (SHWFS) masks, with a focus on the fastrSHWFS designs. It takes a height map of a reflective mask, divides it into sub apertures, removes the global focus term by referencing a central block, and fits local surface planes to each sub aperture. From these fits it computes reflection angles and propagates the corresponding rays downstream to determine spot positions and the overall reflected beam footprint as a function of distance. The implementation is parameterized in sub aperture size, number of sub apertures, focal length, and mask dimensions, so it can be adapted to different mask designs beyond the two current fastrSHWFS masks. The code: Converts mask bitmaps into physical height in microns and reconstructs a focus subtracted mask, divides the mask into a grid of sub apertures and assigns pixel and micron coordinates to each block, excludes user specified unused sub apertures from the analysis, fits a plane to each sub aperture to obtain local surface normals, propagates reflected rays to a range of z positions to compute ray spots and the full reflected beam width, computes the effective mask tilt angle with respect to the incoming beam as a function of propagation distance, and provides helper routines for plotting the grid over the mask and for visualizing the beam geometry. These tools are intended for iterating on fastrSHWFS mask designs and for planning downstream optical layouts, for example choosing lens positions and apertures that capture the reflected beam given known focal plane distances and beam widths.
SU-D-18C-02: Feasibility of Using a Short ASL Scan for Calibrating Cerebral Blood Flow Obtained From DSC-MRI
Purpose: This study aimed to evaluate the feasibility of using a short arterial spin labeling (ASL) scan for calibrating the dynamic susceptibility contrast- (DSC-) MRI in a group of patients with internal carotid artery stenosis. Methods: Six patients with unilateral ICA stenosis enrolled in the study on a 3T clinical MRI scanner. The ASL-cerebral blood flow (-CBF) maps were calculated by averaging different number of dynamic points (N=1-45) acquired by using a Q2TIPS sequence. For DSC perfusion analysis, arterial input function was selected to derive the relative cerebral blood flow (rCBF) map and the delay (Tmax) map. Patient-specific CF was calculated from the mean ASL- and DSC-CBF obtained from three different masks: (1)Tmax< 3s, (2)combined gray matter mask with mask 1, (3)mask 2 with large vessels removed. One CF value was created for each number of averages by using each of the three masks for calibrating the DSC-CBF map. The CF value of the largest number of averages (NL=45) was used to determine the acceptable range(< 10%, <15%, and <20%) of CF values corresponding to the minimally acceptable number of average (NS) for each patient. Results: Comparing DSC CBF maps corrected by CF values of NL (CBFL) in ACA, MCA and PCA territories, all masks resulted in smaller CBF on the ipsilateral side than the contralateral side of the MCA territory(p<.05). The values obtained from mask 1 were significantly different than the mask 3(p<.05). Using mask 3, the medium values of Ns were 4(<10%), 2(<15%) and 2(<20%), with the worst case scenario (maximum Ns) of 25, 4, and 4, respectively. Conclusion: This study found that reliable calibration of DSC-CBF can be achieved from a short pulsed ASL scan. We suggested use a mask based on the Tmax threshold, the inclusion of gray matter only and the exclusion of large vessels for performing the calibration.
Evaluation of an Additively Manufactured Respirator for Personnel Protection from Particulates
Additively manufactured respirators (AMRs) made using rigid plastic can be fitted with repurposed filter media to yield a wearable mask capable of passing a quantitative fit test with criteria set for commercial, N95 health care particulate respirators. This has been verified through an evaluation study assessing AMR masks fabricated using open-source design files and a commercial fused-filament fabrication machine, using N95 filter cloth and a P100 respirator cartridge. A few examples of filter media not designed for human respiratory protection were also evaluated in an AMR mask but did not demonstrate filtering sufficient to pass the N95 test criteria. All attributes of an AMR mask system must be considered during design and when testing performance, including the mask frame, gasket, and the cord used to secure the mask to the face. AMR masks are not the same as commercially available respiratory masks. If AMR masks are used as personal protective equipment (PPE) during a crisis when there is a shortage of regular PPE it is important that wearers are fully informed of the differences, tradeoffs, and risks associated with their use. Quantitative fit testing and proper training on how to don and doff the AMR mask are important to help achieve the best possible outcome when they are used.
SeaWiFS technical report series. Volume 31: Stray light in the SeaWiFS radiometer
Some of the measurements from the Sea-viewing Wide Field-of-view Sensor (SeaWiFS) will not be useful as ocean measurements. For the ocean data set, there are procedures in place to mask the SeaWiFS measurements of clouds and ice. Land measurements will also be masked using a geographic technique based on each measurment's latitude and longitude. Each of these masks involves a source of light much brighter than the ocean. Because of stray light in the SeaWiFS radiometer, light from these bright sources can contaminate ocean measurements located a variable number of pixels away from a bright source. In this document, the sources of stray light in the sensor are examined, and a method is developed for masking measurements near bright targets for stray light effects. In addition, a procedure is proposed for reducing the effects of stray light in the flight data from SeaWiFS. This correction can also reduce the number of pixels masked for stray light. Without these corrections, local area scenes must be masked 10 pixels before and after bright targets in the along-scan direction. The addition of these corrections reduces the along-scan masks to four pixels before and after bright sources. In the along-track direction, the flight data are not corrected, and are masked two pixels before and after. Laboratory measurements have shown that stray light within the instrument changes in a direct ratio to the intensity of the bright source. The measurements have also shown that none of the bands show peculiarities in their stray light response. In other words, the instrument's response is uniform from band to band. The along-scan correction is based on each band's response to a 1 pixel wide bright sources. Since these results are based solely on preflight laboratory measurements, their successful implementation requires compliance with two additional criteria. First, since SeaWiFS has a large data volume, the correction and masking procedures must be such that they can be converted into computationally fast algorithms. Second, they must be shown to operate properly on flight data. The laboratory results, and the corrections and masking procedures that derive from them, should be considered as zeroeth order estimates of the effects that will be found on orbit.
Characterization of Materials Used as Face Coverings for Respiratory Protection
Use of masks is a primary tool to prevent the spread of the novel COVID-19 virus resulting from unintentional close contact with infected individuals. However, detailed characterization of the chemical properties and physical structure of common mask materials is lacking in the current literature. In this study, a series of commercial masks and potential mask materials, including 3M Particulate Respirator 8210 N95, a material provided by Oak Ridge National Laboratory Carbon Fiber Technology Facility (ORNL/CFTF), and a Filti Face Mask Material, were characterized by a suite of techniques, including scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy. Wetting properties of the mask materials were quantified by measurements of contact angle with a saliva substitute. Mask pass-through experiments were performed using a dispersed metal oxide nanoparticle suspension to model the SARS-CoV-2 virus, with quantification via spatially resolved X-ray fluorescence mapping. Notably, all mask materials tested provided a strong barrier against respiratory droplet breakthrough. The comparisons and characterizations provided in this study provide useful information when evaluating mask materials for respiratory protection.
Localized phase contrast imaging at the Wendelstein 7-X stellarator
In its basic form, phase contrast imaging (PCI) provides line-integrated measurements of electron density fluctuations in plasmas. As turbulent fluctuations in magnetically confined plasmas have wave vectors almost perpendicular to the background magnetic field, the signals scattered by fluctuations from different parts of the PCI line-of-sight (LoS) are spatially separated in focal planes of the plasma. This allows localized PCI measurements by placing a mask in such a plane, to only permit signals from specific parts of the LoS to reach the PCI detectors. The present paper describes modeling and design of localization masks for the PCI system at the Wendelstein 7-X (W7-X) stellarator as well as the first results obtained using the masks in the recent long-pulse W7-X experimental campaign. During this project, we have extended the theory describing the mask response within the Fraunhofer diffraction model. As a novel development, we show from first principles that the mask response is determined by the fraction of power of the scattered beam spots that passes the mask. These insights have been used to select the W7-X mask design, consisting of a circular cutout, allowing the unscattered beam spot to pass the mask, with wedges covering a fixed angular range outside the central cutout. In the recent W7-X experimental campaign, the masks have verified the location of the main turbulence features observed by the PCI system and provided new information about the location of short-wavelength magnetohydrodynamic modes.
Spatial region filtering in IRAF/PROS
In order to analyze x ray data, it is nearly always necessary to extract source and background events from a data set. Typically, this is done by defining geometric spatial regions of the data set to describe the source and background. For example, one might wish to extract source events from a circular or elliptical region centered at a particular pixel, and background events from a circular or elliptical annulus whose inner radius matches the source region. At the same time, it might be necessary to exclude one or more nearby sources from the source or background region in question. Thus, it might be necessary to define a pie-shaped region or even an entirely irregularly-shaped region to exclude. A spatial filtering scheme called REGIONS was implemented in IRAF/PROS to support these and other types of spatial region extraction. It allows users to create a spatial mask by specifying one or more ASCII geometric shape descriptors (box, circle, ellipse, pie, point, annulus, and polygon) as regions to be included or excluded in the mask. In addition, two or more shapes can be combined using Boolean algebra to create an infinite variety of sophisticated regions. Each geometric shape has a specific set of parameters that describe that shape. For example, a circle is described by a center and a radius, while a box is described by a center, length, width, and rotation angle. These quantities can be specified in units of pixels or, in cases where the target image contains world coordinate system information, they can be described in units such as RA and Dec. Users can create region mask files by feeding an ASCII region descriptor to the IRAF/PROS plcreate task. Temporary masks can also be created from ASCII region descriptors by individual applications that call the routines in the region creation library. This library implements a yacc-based region parser that compiles the ASCII descriptors into 'software CPU' instructions which are then executed to create the mask. The mask created from these region descriptors is a standard IRAF PLIO mask. It can be combined with other PLIO masks (e.g., exposure masks) to provide complete spatial filtering capabilities. The capabilities of the region filtering scheme are described. It also discusses the design philosophy guiding our work, as well as our plans for the future.
Automated Detection of Spurious Signals in VLBI Phase Calibration Data
In this memorandum, a set of processing strategies for automatic masking of phase calibration tones is outlined as implemented in the software package PIMA in the task Generate Phase Calibration Mask, or GEPM. The task relies on a robust procedure of cleaning phase calibration data before employing several mathematical strategies designed to selectively identify spurious signals from phase calibration tones. These strategies were derived as more rigorous implementations of heuristics traditionally used by analysts in manually identifying problematic phase calibration data. The task is intended to automate the process of generating a phase calibration mask and in so doing increase the speed and regularity of VLBI analysis. At the outset of the project, a series of goals were identified to evaluate the success of this mask generation. This included the development of an algorithm to identify and mask short-term (defined as less than 10 seconds in length) spurious signals affecting phase calibration data, the development of an algorithm to identify and mask phase calibration tones affected by constant radio-frequency interference, the implementation of a detection scheme for identifying large jumps in phase calibration phase caused by clock breaks, and finally a method of reporting phase calibration health metrics to the user. Processing of over 10 experiments has demonstrated that the final form of the task GEPM as detailed in this technical memorandum satisfies each of these conditions and satisfactorily performs the task of automatic phase calibration data masking, although the wide variety in quality and characteristics of phase calibration data makes a single solution to the problem quite difficult. A series of user inputs have therefore been defined to assist analysts in tailoring automatic masking to specific stations and phase calibration generators. The vast majority of applicable code was written in FORTRAN to increase execution speed and ease of interfacing with the existing code base in PIMA, but a wrapper function in Python was also written to allow for a simpler method of interacting with GEPM and inputting relevant parameters. In addition to this report, thorough documentation was added to the already existing repositories associated with PIMA as a whole.
TEM phase contrast imaging with image plane phase grating
Transmission microscopy imaging systems include a mask and/or other modulator situated to encode image beams, e.g., by deflecting the image beam with respect to the mask and/or sensor. The beam is modulated/masked either before or after transmission through a sample to induce a spatially and/or temporally encoded signal by modifying any of the beam/image components including the phase/coherence, intensity, or position of the beam at the sensor. For example, a mask can be placed/translated through the beam so that several masked beams are received by a sensor during a single sensor integration time. Images associated with multiple mask displacements are then used to reconstruct a video sequence using a compressive sensing method. Another example of masked modulation involves a mechanism for phase-retrieval, whereby the beam is modulated by a set of different masks in the image plane and each masked image is recorded in the diffraction plane.