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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Mass study for modular approaches to a solar electric propulsion module
The propulsion module comprises six to eight 30-cm thruster and power processing units, a mercury propellant storage and distribution system, a solar array ranging in power from 18 to 25 kW, and the thermal and structure systems required to support the thrust and power subsystems. Launch and on-orbit configurations are presented for both modular approaches. The propulsion module satisfies the thermal design requirements of a multimission set including: Mercury, Saturn, and Jupiter orbiters, a 1-AU solar observatory, and comet and asteroid rendezvous. A detailed mass breakdown and a mass equation relating the total mass to the number of thrusters and solar array power requirement is given for both approaches.
Infrastructure for deployment of power systems
A preliminary effort in characterizing the types of stationary lunar power systems which may be considered for emplacement on the lunar surface from the proposed initial 100-kW unit in 2003 to later units ranging in power from 25 to 825 kW is presented. Associated with these power systems are their related infrastructure hardware including: (1) electrical cable, wiring, switchgear, and converters; (2) deployable radiator panels; (3) deployable photovoltaic (PV) panels; (4) heat transfer fluid piping and connection joints; (5) power system instrumentation and control equipment; and (6) interface hardware between lunar surface construction/maintenance equipment and power system. This report: (1) presents estimates of the mass and volumes associated with these power systems and their related infrastructure hardware; (2) provides task breakdown description for emplacing this equipment; (3) gives estimated heat, forces, torques, and alignment tolerances for equipment assembly; and (4) provides other important equipment/machinery requirements where applicable. Packaging options for this equipment will be discussed along with necessary site preparation requirements. Design and analysis issues associated with the final emplacement of this power system hardware are also described.
Reliable Breakdown Obtained in Silicon Carbide Rectifiers
The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.
French wind generator systems
The experimental design of a wind driven generator with a rated power of 800 kilovolt amperes and capable of being connected to the main electrical network is reported. The rotor is a three bladed propeller; each blade is twisted but the fixed pitch is adjustable. The asynchronous 800-kilovolt ampere generator is driven by the propeller through a gearbox. A dissipating resistor regulates the machine under no-load conditions. The first propeller on the machine lasted 18 months; replacement of the rigid propeller with a flexible structure resulted in breakdown due to flutter effects.
Research on high energy density capacitor materials
The Pulsed Plasma thruster is the simplest of all electric propulsion devices. It is a pulsed device which stores energy in capacitors for each pulse. The lifetimes and energy densities of these capacitors are critical parameters to the continued use of these thrusters. This report presents the result of a research effort conducted by JPL into the materials used in capacitors and the modes of failure. The dominant failure mechanism was determined to be material breakdown precipitated by heat build-up within the capacitors. The presence of unwanted gas was identified as the source of the heat. An aging phenomena was discovered in polycarbonate based capacitors. CO build-up was noted to increase with the number of times the capacitor had been discharged. Improved quality control was cited as being essential for the improvement of capacitor lifetimes.
Performance Validation of a Thermally Integrated 50 kW High Temperature Electrolyzer System
In the proposed project, INL and OxEon seek to improve the value proposition of hydrogen production by integrating reversible fuel cell operations at relatively small scale for distributed energy applications. This goal will be accomplished by converting a 50 kW solid oxide electrolysis cell or SOEC system into a reversible system that operates at 30 kW in electrolysis mode and approximately 10 kW in fuel cell mode. The reversible SOC system will be operated for over 3,000 hours using an improved catalyst in the fuel electrode. Steam for the electrolysis will come from an electric boiler Thermal Energy Distribution System that will be configured to mimic an industrial source of low-grade heat. Thermodynamic analysis will be performed to demonstrate the potential of the system to achieve >85% system efficiency in electrolysis mode. Finally, a technoeconomic analysis will be completed to show potential to produce hydrogen at a cost of $2/kg. The figure at the right indicates a target cost breakdown to achieve that goal.
A study of the deposition of carbide coatings on graphite fibers
The chemical vapor deposition of boron carbide and silicon carbide on graphite fibers to increase their electrical resistance was studied. Silicon carbide coatings were applied without degradation of the mechanical properties of the filaments. These coatings typically added 1000 ohms to the resistance of a filament as measured between two mercury pools. When SiC-coated filaments were oxidized by refluxing in boiling phosphoric acid, average resistance increased by an additional 1000 ohms; in addition resistance increases as high as 150 K ohms and breakdown voltages as high as 17 volts were noted. Data on boron carbide coatings indicated that such coatings would not be effective in increasing resistance, and would degrade the mechanical properties.
Report of the Seasat Failure Review Board
The Seasat spacecraft failed on October 9, 1978, after satisfactory operation in orbit for 105 days, as a result of a loss of electrical power in the Agena bus that was used as a part of the spacecraft. This loss of power was caused by a massive and progressive short in one of the slip ring assemblies that was used to connect the rotating solar arrays into the power subsystem. The most likely cause of this short was the initiation of an arc between adjacent slip ring brush assemblies. The triggering mechanism of this arc could have been either a wire-to-brush assembly contact, a brush-to-brush contact, or a momentary short caused by a contaminant that bridged internal components of opposite electrical polarity. The slip ring assembly, as used in the Seasat spacecraft, was connected into the power subsystem in such a way that most of the adjacent brush assemblies were of opposite electrical polarity. This wiring arrangement, together with the congested nature of the design itself, made the Seasat slip ring assembly a unique, first-of-a-kind component that was particularly prone to shorting. The possibility of slip ring failures resulting from placing opposite electrical polarities on adjacent brush assemblies was known at least as early-as the summer of 1977 to other projects within the contractor's organization. Furthermore, failures of slip ring assemblies due to shorting between brushes had been experienced by the prime contractor on slip ring assemblies used by other programs. That the Seasat organization was not fully aware of these potential failure modes was due to a breakdown in communication within the contractor's organization.
ARPA-E PNDIODES "PN Junctions by Ion Implantation" Project (Final Report)
Electricity accounts for nearly 40% of the energy generated in the United States, of which 65% is lost to electrical system inefficiency before reaching end-use sectors. Power electronics will play a growing role in this distribution and end-use, with up to 80% of electricity estimated to pass through power electronics from generation to consumption by 2030. This gives technical improvements in power electronics enormous potential to drive efficiency gains throughout the U.S. economy. Current Si-based power architectures including MOSFETs and IGBTs are limited by high losses, low switching frequency, and poor high-temperature performance. Given the material properties of GaN, devices can exhibit a given turn-on resistance and breakdown voltage with a minute fraction of the area of a Si device—all with higher switching speeds. While n-type doping of III-nitrides has reached a high level of maturity and integration into commercialized products, p-type doping presents distinct challenges that requires continued research. The success of the next generation of GaN-based power devices depends in large part on the ability to form selective-area p-type regions, which can be accomplished by ion implantation of the prevailing acceptor dopant, Mg. This approach is relatively inexpensive and is a fab-ready processing step for creation of current-generation power electronic devices including BJTs, IGBTs, and diode rectifiers. However, ion implantation induces lattice damage and creates point defects within the material, which negatively impacts dopant activation annealing. These forms of damage may be removed by high-temperature annealing, however short annealing time and higher pressures are required to prevent decomposition of the material. We approach this challenge through an innovative combination of approaches toward obtaining high-conductivity p-type GaN. By the novel employment of a gyrotron, a microwave source that can be shaped into a highly localized beam to dissipate very high power in a semiconductor target, a wafer of GaN can be annealed in short (<2 s) ‘pulses’ at temperatures of 1450 °C (2640 °F) to achieve p-type activation without appreciable surface degradation. The p-type activation of Mg-implanted GaN can be further aided by co-implantation with N, believed to enhance the removal of point defects that compensate the acceptors dopant. Elevation to such high temperatures for even a short time induces degradation of GaN-to overcome, we have implemented additional measures to retain high-quality crystalline GaN while removing implant damage and activating Mg dopant. A bilayer cap of AlN is deposited by a combination of chemical and physical vapor deposition to protect the GaN surface. To prevent decomposition of GaN loss of N during annealing, a custom vessel—to contain pressurized N while allowing injection of microwave energy—is employed. By detailed study of the interaction of various measures that are implemented to protect the sample surface (GaN), activate the implanted dopants, and mitigate damage of the lattice heating damage during annealing, we are able to achieve p-type GaN and observe recovery of the crystal and removal of substantial density of defects created during the implantation process.
Transitions between electron emission and gas breakdown mechanisms across length and pressure scales
This Perspective outlines theoretical, simulation, and experimental studies linking electron emission and gas breakdown. Many studies have investigated field emission-driven microscale gas breakdown, including recent reviews [Garner et al., IEEE Trans. Plasma Sci. 48, 808–824 (2020); Fu et al., Plasma Res. Express 2, 013001 (2020)]. This Perspective focuses on generalizing field emission-driven microscale gas breakdown to consider the contribution of other forms of electron emission, specifically thermionic and space-charge limited. Recent theoretical studies have unified thermionic, field, and space-charge limited emission with and without collisions to derive “nexuses” where the individual solutions match, indicating transitions in the mechanisms. Reducing device size to nanoscale at atmospheric pressure leads to a transition from field emission to space-charge limited emission for nitrogen at ~250 nm. This Perspective summarizes the derivation of these nexuses and future extensions. We next describe simulation and theoretical studies for field emission-driven microscale gas breakdown and highlight how the nexus theory may be integrated to account for temperature, space-charge, and pulse parameters. Finally, we summarize the development of optical techniques to assess microscale gas breakdown and recent nanoscale experiments at atmospheric pressure that suggest that space-charge may begin to contribute to field emission prior to gas breakdown. We highlight the combination of theory, simulation, and experiment to link electron emission and gas breakdown mechanisms across length, pressure, and temperature scales for applications that include vacuum electronics, pulsed power, and medicine.
The effect of high-power transient events on tungsten and tungsten coatings used for radio frequency launcher applications
High-temperature plasma-facing material coatings used for radio frequency (RF) launchers need to be robust enough to survive RF breakdown arcing or other transient events from the plasma (e.g., an edge localized mode) without causing a catastrophic failure of the coating. High-power transient effects are being explored by using an RF-induced vacuum arc to determine the robustness of tungsten coatings made by a variety of manufacturing methods. A 1/4-wavelength resonant section of vacuum transmission line terminated with an open circuit electrode structure with a well-defined electric field (30-60 kV/mm) produces repeatable arcing conditions. The initial focus is on tungsten as a plasma-facing material, including sintered tungsten, tungsten coatings on steel produced via physical vapor deposition (PVD), and functionally graded tungsten/steel coatings deposited by low-pressure plasma-spraying (LPPS). Thin PVD coatings (1-2 microns) fail catastrophically from an arc and result in severe delamination of the coating. The arc-induced damage of thicker coatings, such as those made via LPPS, tend to be restricted to the top few microns of the surface. Arcing often initiates on sharp surface microstructures and causes localized melting of tungsten at the surface of all the materials studied and results in resolidified melt pools with surface cracks. The resolidified surface results in a reduction in overall deuterium retention when exposed to typical RF plasma sheath conditions.
Light control of surface–bulk coupling by terahertz vibrational coherence in a topological insulator
The demand for disorder-tolerant quantum logic and spin electronics can be met by generating and controlling dissipationless spin currents protected by topology. Dirac fermions with helical spin-locking surface transport offer a way of achieving such a goal. Yet, surface-bulk coupling can lead to strong Dirac electron scattering with bulk carriers and phonons as well as impurities, assisted by such dissipative channel, which results in “topological breakdown”. Here, we demonstrate that coherent lattice vibrations periodically driven by a single-cycle terahertz (THz) pulse can significantly suppress such dissipative channel in topological insulators. This is achieved by reducing the phase space in the bulk available for Dirac fermion scattering into during coherent lattice oscillations in Bi 2 Se 3 . This light-induced suppression manifests as a remarkable transition exclusively in surface transport, absent for bulk, above the THz electric fields for driving coherent phonons, which prolongs the surface transport lifetime. These results, together with simulations, identify the critical role of spin–orbit coupling for the “phase space contraction” mechanism that suppresses the surface-bulk coupling. Imposing vibrational quantum coherence into topological states of matter may become a universal light control principle for reinforcing the symmetry-protected helical transport.
Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films
Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.
A Full-Cell Model for Direct Toluene Electro-Hydrogenation Electrolysis
Liquid organic hydrogen carriers (LOHCs) are organic molecules that undergo a hydrogenation/dehydrogenation cycle to enable storage and transportation of hydrogen fuel under ambient conditions. One promising LOHC candidate is toluene, which can be converted to methylcyclohexane (MCH) electrochemically, enabling a decarbonized process when green electricity is used. In this study, we developed a full-cell model for the direct electro-hydrogenation of toluene to MCH, utilizing a zero-gap membrane electrode assembly architecture. The model incorporates electrochemical kinetics, ionic transport, water transport across the membrane, and mass transport effects. Electrochemical kinetics are characterized using Tafel analysis on Pt/Ru catalyst. The model is validated against experimental data, including polarization curves, Faradaic efficiencies, and water crossover. A voltage breakdown analysis shows that the performance is dominated by kinetic losses, and the model is used to carry out a comparison of different toluene electro-hydrogenation reaction catalysts. Finally, a sensitivity analysis is conducted on key design parameters illustrating which can be modified to maximize electrolyzer performance. The cathode specific surface area and cathode porous transport layer thickness (PTL) have the largest impact on the current density, while the PTL thickness and Pt loading in the PTL have the largest impact on Faradaic efficiency.
Thermodynamic Theory of Proximity Ferroelectricity
Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a nonferroelectric polar material becomes a ferroelectric one by interfacing with a thin ferroelectric layer. Strongly polar materials, such as AlN and ZnO, which were previously unswitchable with an external field below their dielectric breakdown fields, can now be switched with practical coercive fields when they are in intimate proximity to a switchable ferroelectric. Here, we develop a general Landau-Ginzburg theory of proximity ferroelectricity in multilayers of nonferroelectrics and ferroelectrics to analyze their switchability and coercive fields. The theory predicts regimes of both “proximity switching,” where the multilayers collectively switch, and “proximity suppression,” where they collectively do not switch. The mechanism of the proximity ferroelectricity is an internal electric field determined by the polarization of the layers and their relative thickness in a self-consistent manner that renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier. Further reduction in the coercive field emerges from charged defects in the bulk that act as nucleation centers. The application of the theory to proximity ferroelectricity in Al x−1 Sc x N/AlN and Zn 1−x Mg x O/ZnO bilayers is demonstrated. The theory further predicts that dielectric-ferroelectric and paraelectric-ferroelectric multilayers can potentially lead to induced ferroelectricity in the dielectric or paraelectric layers, resulting in the entire stack being switched, an exciting avenue for new discoveries. This thawing of “frozen ferroelectrics,” paraelectrics, and potentially dielectrics with high dielectric constants promises a large class of new ferroelectrics with exciting prospects for previously unrealizable domain-patterned optoelectronic and memory technologies.
Recent experimental measurements of space platform charging at LEO altitudes
The paper discusses some of the results of vehicle electrical potential from recent sounding rocket experiments involving charging of a space platform by both electron beam emission and by the application of differential bias between elements of the platform. Conclusions are presented that are applicable to the experimental parameters of the CHARGE-2 and SPEAR-1 payloads. The currents collected by HV biased collectors in the sphere show strong magnetic limiting and are close to the values predicted by Parker and Murphy (1967). No volume breakdown was observed above 100 km altitude by exposing voltages up to 45 kV to the ionosphere in the SPEAR-1 payload. The release of gas at flow rates typical of ACS systems can provide sufficient plasma to electronically neutralize space platforms biased at either positive or negative potentials.
SiC Multi-Chip Power Modules as Power-System Building Blocks
The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.