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At least 523 records · Page 29

An atomistic study connecting underlying dislocation behavior with superior mechanical properties of NiCoCr medium entropy alloy

NiCoCr-based medium-entropy alloy (MEA) with a simple face-centered cubic crystal phase exhibits excellent mechanical properties, often attributed to the synergy of multiple deformation mechanisms. However, the atomistic origin of their outstanding mechanical response, including microstructural evolution and dislocation behavior under varying strain-rates and orientation, remains unclear. In this work, we employ large-scale molecular dynamics (MD) simulations to investigate the changes in deformation mechanisms along three distinct orientations ([110], [111], [100]) under varying strain rates (1 ×10 8 /sec, 1 ×10 10 /sec, 1 ×10 12 /sec) in the NiCoCr MEA. The presence of the stair-rod and the Shockley partial dislocations under uniaxial tensile strain are found to play a key role in the formation of deformation twinning and ε-martensite, which positively correlates with strain-rate dependent dislocation analysis. These findings further establish the role of the dislocations in controlling the superior mechanical response and excellent fracture toughness of the NiCoCr MEA. Systematic transmission-electron microscopy tests performed on the [111]-oriented crystals, deformed at different strain levels, at room temperature provide clear evidence of both the extended stacking-fault and the stair rods, confirming the predicted microstructural features. Finally, this study offers key insights into the complex nucleation mechanisms of deformation twinning and ε-martensite, such as twinning – and transformation–induced plasticity (TWIP-TRIP), providing valuable guidelines for studying similar material classes.

36 MATERIALS SCIENCE↗

Dislocation-θ' (Al2Cu) interactions during creep deformation of an Al-Cu alloy

While precipitate-dislocation interactions are well-understood for Al-Cu alloys in tension, creep behavior has seen far less study. New, thermally-stabilized Al-Cu alloys have θ' (Al 2 Cu) as strengthening precipitates that remain stable up to 300 °C (~60% of the melting temperature) and higher, where creep becomes essential to the mechanical behavior. This investigation identifies the precipitate-dislocation interactions in such an Al-Cu alloy using in-situ neutron diffraction and scanning transmission electron microscopy. Significant load transfer to the θ' precipitates occurs, which can be attributed to dislocation loops on the interfaces of θ' and the Al matrix. Thus, Orowan looping is identified to be the primary activity for precipitate-dislocation interactions. As Orowan looping and load transfer are associated with significant strain hardening, these results explain the excellent creep resistance seen in this alloy, and provide insights into the design of precipitation strengthened alloys with superior creep performance.

36 MATERIALS SCIENCE↗

23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations

A 2-terminal, dual-junction, epitaxially integrated, GaAsP/Si tandem solar cell with an 3rd party certified efficiency of 23.4 % was fabricated via MOCVD growth on an ex-situ produced Si sub cell. The drastic efficiency improvement over the authors previous peer-reviewed demonstration of such a device architecture is examined. Critical advancements in top cell design to maximize short wavelength response were critical in enabling improved top cell response. An in-depth analysis of this champion tandem cell has identified key loss mechanisms which elucidate the pathway for further efficiency gains. First, voltage dependent collection efficiency in the GaAsP top cell is the primary cause of fill factor losses currently limiting efficiency. Analysis of spectrally resolved I–V measurements and analytical device modeling and indicate poor diffusion length due to elevated dislocation densities as the likely cause for the voltage dependent collection efficiency. Second, modeling for the GaAs 0.75 P 0.25 top cell, using experimental data at multiple dislocation densities, provides quantitative understanding of the current and voltage losses associated with threading dislocations providing a clear efficiency pathway with reduction in dislocation density. Finally, Si subcell modeling identifies the pathway for further Si subcell advances over the present, simplistic design, which has yet to employ the known benefits of rear surface texture or dielectric passivation.

14 SOLAR ENERGY↗

Comparison of Dislocation Characterization by Electron Channeling Contrast Imaging and Cross-Correlation Electron Backscattered Diffraction

The characterization and quantification of dislocations is predominately carried out using transmission electron microscopy (TEM). Nevertheless, the sample preparation necessary for TEM foils can be cumbersome and possibly introduce defects. Two other techniques for characterizing and quantifying dislocations are electron channeling contrast imaging (ECCI) and cross-correlation electron backscattered diffraction (CC-EBSD). ECCI is similar to TEM in that specific imaging (channeling or diffraction) conditions need to be established, but is carried out in a scanning electron microscope on bulk samples, resulting in less complex sample preparation. CC-EBSD measures subtle changes in orientation measured from EBSD patterns to calculate elastic strains and the Nye tensor to deduce and map the total geometrically necessary dislocation (GND) content. Furthermore, this work presented here compares the capabilities of ECCI and CC-EBSD to map dislocations generated from nanoindentation.

42 ENGINEERING↗

Electronic and Chemical Properties of a Surface-Terminated Screw Dislocation in MgO

Dislocations represent an important and ubiquitous class of topological defect found at the surfaces of metal oxide materials. They are thought to influence processes as diverse as crystal growth, corrosion, charge trapping, luminescence, molecular adsorption and catalytic activity, however, their electronic and chemical properties remain poorly understood. Here, through a detailed first principles investigation into the properties of a surface terminated screw dislocation in MgO we provide atomistic insight into these issues. We show that surface dislocations can exhibit intriguing electron trapping properties which are important for understanding the chemical and electronic characteristics of oxide surfaces. The results presented in this article taken together with recent experimental reports show that surface dislocations can be equally as important as more commonly considered surface defects, such as steps, kinks and vacanies, but are now just beginning to be understood.

Environmental Molecular Sciences Laboratory↗

The Role of Dislocations in the Anelasticity of the Upper Mantle

Dislocation‐based dissipation mechanisms potentially control the viscoelastic response of Earth's upper mantle across a variety of geodynamic contexts, including glacial isostatic adjustment, postseismic creep, and seismic‐wave attenuation. However, there is no consensus on which dislocation‐based, microphysical process controls the viscoelastic behavior of the upper mantle. Although both intergranular (plastic anisotropy) and intragranular (backstress) mechanisms have been proposed, there is currently insufficient laboratory data to discriminate between those mechanisms. Here, we present the results of forced‐oscillation experiments in a deformation‐DIA apparatus at confining pressures of 3–7 GPa and temperatures of 298–1370 K. Our experiments tested the viscoelastic response of polycrystalline olivine—the main constituent of the upper mantle—at stress amplitudes from 70 to 2,800 MPa. Mechanical data are complemented by microstructural analyses of grain size, crystallographic preferred orientation, and dislocation density. We observe amplitude‐ and frequency‐dependent attenuation and modulus relaxation and find that numerical solutions of the backstress model match our results well. Therefore, we argue that interactions among dislocations, rather than intergranular processes (e.g., plastic anisotropy or grain boundary sliding), control the viscoelastic behavior of polycrystalline olivine in our experiments. In addition, we present a linearized version of the constitutive equations of the backstress model and extrapolate it to conditions typical of seismic‐wave propagation in the upper mantle. Our extrapolation demonstrates that the backstress model can explain the magnitude of seismic‐wave attenuation in the upper mantle, although some modification is required to explain the weak frequency dependence of attenuation observed in nature and in previous experimental work.

Hein, Diede [Univ. of Minnesota, Minneapolis, MN (↗

Hydrogenated vacancies lock dislocations in aluminium

Due to its high diffusivity, hydrogen is often considered a weak inhibitor or even a promoter of dislocation movements in metals and alloys. By quantitative mechanical tests in an environmental transmission electron microscope, here we demonstrate that after exposing aluminium to hydrogen, mobile dislocations can lose mobility, with activating stress more than doubled. On degassing, the locked dislocations can be reactivated under cyclic loading to move in a stick-slip manner. However, relocking the dislocations thereafter requires a surprisingly long waiting time of ~10 3 s, much longer than that expected from hydrogen interstitial diffusion. Both the observed slow relocking and strong locking strength can be attributed to superabundant hydrogenated vacancies, verified by our atomistic calculations. In conclusion, vacancies therefore could be a key plastic flow localization agent as well as damage agent in hydrogen environment.

36 MATERIALS SCIENCE↗

Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics

To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb 1$-$x Sb 2x/3 Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains. This leads to a lattice thermal conductivity as low as 0.4Wm -1 K -1 and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. As a result, the vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dislocation nucleation facilitated by atomic segregation

Surface segregation—the enrichment of one element at the surface, relative to the bulk—is ubiquitous to multi-component materials. Using the example of a Cu–Au solid solution, we demonstrate that compositional variations induced by surface segregation are accompanied by misfit strain and the formation of dislocations in the subsurface region via a surface di˙usion and trapping process. The resulting chemically ordered surface regions acts as an e˙ective barrier that inhibits subsequent dislocation annihilation at free surfaces. Using dynamic, atomic-scale resolution electron microscopy observations and theory modelling, we show that the dislocations are highly active, and we delineate the specific atomic-scale mechanisms associated with their nucleation, glide, climb, and annihilation at elevated temperatures. As a result, these observations provide mechanistic detail of how dislocations nucleate and migrate at heterointerfaces in dissimilar-material systems.

36 MATERIALS SCIENCE↗

Unraveling the dislocation core structure at a van der Waals gap in bismuth telluride

Tetradymite-structured chalcogenides such as bismuth telluride (Bi 2 Te 3 ) are of significant interest for thermoelectric energy conversion and as topological insulators. Dislocations play a critical role during synthesis and processing of such materials and can strongly affect their functional properties. The dislocations among quintuple layers present special interest since their core structure is controlled by the van der Waals interactions between the layers. In this work, using atomic-resolution electron microscopy, we resolve the basal dislocation core structure in Bi 2 Te 3 , quantifying the disregistry of the atomic planes across the core. We show that, despite the existence of a stable stacking fault in the basal plane gamma surface, the dislocation core spreading is mainly due to the weak bonding between the layers, which leads to a small energy penalty for layer sliding parallel to the van der Waals gap. Measurements within a semidiscrete variational Peierls-Nabarro model informed by first-principles calculations support our experimental findings.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Moiré pattern of interference dislocations in condensate of indirect excitons

Interference patterns provide direct measurement of coherent propagation of matter waves in quantum systems. Superfluidity in Bose–Einstein condensates of excitons can enable long-range ballistic exciton propagation and can lead to emerging long-scale interference patterns. Indirect excitons (IXs) are formed by electrons and holes in separated layers. The theory predicts that the reduced IX recombination enables IX superfluid propagation over macroscopic distances. Here, we present dislocation-like phase singularities in interference patterns produced by condensate of IXs. We analyze how exciton vortices and skyrmions should appear in the interference experiments and show that the observed interference dislocations are not associated with these phase defects. We show that the observed interference dislocations originate from the moiré effect in combined interference patterns of propagating condensate matter waves. The interference dislocations are formed by the IX matter waves ballistically propagating over macroscopic distances. The long-range ballistic IX propagation is the evidence for IX condensate superfluidity.

36 MATERIALS SCIENCE↗

Atomistic simulations of dislocation mobility in refractory high-entropy alloys and the effect of chemical short-range order

Abstract Refractory high-entropy alloys (RHEAs) are designed for high elevated-temperature strength, with both edge and screw dislocations playing an important role for plastic deformation. However, they can also display a significant energetic driving force for chemical short-range ordering (SRO). Here, we investigate mechanisms underlying the mobilities of screw and edge dislocations in the body-centered cubic MoNbTaW RHEA over a wide temperature range using extensive molecular dynamics simulations based on a highly-accurate machine-learning interatomic potential. Further, we specifically evaluate how these mechanisms are affected by the presence of SRO. The mobility of edge dislocations is found to be enhanced by the presence of SRO, whereas the rate of double-kink nucleation in the motion of screw dislocations is reduced, although this influence of SRO appears to be attenuated at increasing temperature. Independent of the presence of SRO, a cross-slip locking mechanism is observed for the motion of screws, which provides for extra strengthening for refractory high-entropy alloy system.

36 MATERIALS SCIENCE↗

Anomalous entropy-driven kinetics of dislocation nucleation

The kinetics of dislocation reactions, such as dislocation multiplication, controls the plastic deformation in crystals beyond their elastic limit, therefore critical mechanisms in a number of applications in materials science. We present a series of large-scale molecular dynamics simulations that shows that one such type of reactions, the nucleation of dislocation at free surfaces, exhibit unconventional kinetics, including unexpectedly large nucleation rates under compression, very strong entropic stabilization under tension, as well as strong non-Arrhenius behavior. These unusual kinetics are quantitatively rationalized using a variational transition state theory approach coupled with an efficient numerical scheme for the estimation of vibrational entropy changes. These results highlight the need for a variational treatment of the kinetics to quantitatively capture dislocation reaction kinetics, especially at low-to-moderate strains where large deformations are required to activate reactions. These observations suggest possible explanations to previously observed unconventional deformation kinetics in both molecular dynamics simulations and experiments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Evolution of dislocations during the rapid solidification in additive manufacturing

Materials processed by fusion-based additive manufacturing (AM) typically exhibit relatively high dislocation densities, along with cellular structures and elemental segregation. This representative structural feature significantly influences material performance; however, post-mortem microstructure characterizations of AM materials cannot capture the dynamic evolution of dislocations during the manufacturing process, thereby offering limited mechanism-based guidance for further advancing AM techniques and facilitating the qualification and certification of AM products. In this study, we conduct operando high-energy synchrotron X-ray diffraction experiments on wire-laser directed energy deposition of 316 L stainless steel. Through a unique configuration, our operando synchrotron experiments semi-quantitatively probe the dislocation density in solid phases and their dynamic changes during solidification and subsequent cooling. By integrating this advanced synchrotron technique with multi-physics simulation, in-situ neutron diffraction, and multi-scale electron microscopy characterization, our mechanistic study aims to elucidate the effects of rapid cooling and subsequent thermal cycling on the dislocation generation and evolution.

36 MATERIALS SCIENCE↗

The kinetics of static recovery by dislocation climb

Abstract The initial microstructure of a wide range of structural materials is conditioned by thermo-mechanical treatments such as hot-working, tempering, or solution annealing. At the elevated temperatures associated with these treatments the dislocation microstructure evolves, usually decreasing in density through a process known as static recovery. Despite its technological relevance, static recovery is not fully characterized from a theoretical standpoint, with even the controlling mechanisms subject to debate. In this study, a climb-enabled discrete dislocation dynamics (DDD) capability is leveraged to explore the kinetics of static recovery in pure Fe when controlled by dislocation climb. Quantitative data from these simulations is used to develop a revised static recovery law, and provides the parameters appropriate for predictive microstructure models in Fe. This law differs from previous analytical derivations invoking climb of dislocations, following the logarithmic trends typical of experimental observations where prior work did not. Direct comparison between the recovery law derived from DDD to experimental recovery data in alpha Fe shows strong agreement across a range of temperatures, and suggests that climb is the controlling mechanism for static recovery in pure metals.

36 MATERIALS SCIENCE↗

Towards dislocation-driven quantum interconnects

A central problem in the deployment of quantum technologies is the realization of robust architectures for quantum interconnects. We propose to engineer interconnects in semiconductors and insulators by patterning spin qubits at dislocations, thus forming quasi one-dimensional lines of entangled point defects. To gain insight into the feasibility and control of dislocation-driven interconnects, we investigate the optical cycle and coherence properties of nitrogen-vacancy (NV) centers in diamond, in proximity of dislocations, using a combination of advanced first-principles calculations. We show that one can engineer spin defects with properties similar to those of their bulk counterparts, including charge stability and a favorable optical cycle, and that NV centers close to dislocations have much improved coherence properties. Finally, we predict optically detected magnetic resonance spectra that may facilitate the experimental identification of specific defect configurations. Our results provide a theoretical foundation for the engineering of one-dimensional arrays of spin defects in the solid state.

Materials science↗

Interaction of Glide Dislocations with Extended Precipitates in Mg-Nd alloys

The unit processes of precipitate-dislocation interaction in dilute Mg-Nd alloys are elucidated through in situ indentation experiments in TEM. Results suggest that pinned dislocations can glide along the broad facets of extended β1 precipitates, a common strengthening phase in Mg- rare earth (RE) alloys. A dislocation-theory based analysis suggests that the shape, spacing and orientation (with respect to the glide plane) of β1 precipitates may favor glide of pinned dislocations along interfaces as opposed to the classical mechanism of bowing and looping around the precipitate.

36 MATERIALS SCIENCE↗

Quantification of dislocation nucleation stress in TiN through high-resolution in situ indentation experiments and first principles calculations

Using the in situ indentation of TiN in a high-resolution transmission electron microscope, the nucleation of full as well as partial dislocations has been observed from {001} and {111} surfaces, respectively. The critical elastic strains associated with the nucleation of the dislocations were analyzed from the recorded atomic displacements, and the nucleation stresses corresponding to the measured critical strains were computed using density functional theory. The resolved shear stress was estimated to be 13.8 GPa for the partial dislocation 1/6 <110> {111} and 6.7 GPa for the full dislocation ½ <110> {110}. Moreover, such an approach of quantifying nucleation stresses for defects via in situ high-resolution experiment coupled with density functional theory calculation may be applied to other unit processes.

36 MATERIALS SCIENCE↗