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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Drag Reduction Devices for Aircraft (Latest Citations from the Aerospace Database)

The bibliography contains citations concerning the modeling, application, testing, and development of drag reduction devices for aircraft. Slots, flaps, fences, large-eddy breakup (LEBU) devices, vortex generators and turbines, Helmholtz resonators, and winglets are among the devices discussed. Contour shaping to ensure laminar flow, control boundary layer transition, or minimize turbulence is also covered. Applications include the wings, nacelles, fuselage, empennage, and externals of aircraft designed for high-lift, subsonic, or supersonic operation. The design, testing, and development of directional grooves, commonly called riblets, are covered in a separate bibliography.(Contains 50-250 citations and includes a subject term index and title list.)

AIRCRAFT DESIGN↗
NASA NTRS1998

Evaluation of Relative Sensitivity of SAW and Flexural Plate Wave Devices for Atmospheric Sensing

The objective of this project is to evaluate the suitability of the ultrasonic flexural plate wave (FPW) device as the detector in a gas chromatograph (GC). Of particular interest is the detection of nitrous oxide (N2O). From experimental results we conclude analyte detection is achieved through two mechanisms: changes in gas density, and mass loading of the device membrane due to the sorption of gas molecules. Reducing the dead volume of the FPW chamber increased the FPW response. A comparison of the FPW response to that of the surface acoustic wave (SAW) detector provided with the GC (made by MSI, Microsensor Technologies, Inc.), shows that for unseparated N2O in N2, the FPW exhibits a sensitivity that is at least 550 times greater than that of the SAW device. A Porapak Q column was found to separate N2O from its carrier gas, N2 or He. With the Porapak Q column, a coated FPW detected 1 ppm N2O in N2 or He, with a response magnitude of 7 Hz. A coated SAW exhibited a response of 25 Hz to pure N2O. The minimal detectable N2O concentrations of the sensors were not evaluated.

White, Richard M.↗
NASA NTRS1999

Evaporative Cooling Membrane Device

An evaporative cooling membrane device is disclosed having a flat or pleated plate housing with an enclosed bottom and an exposed top that is covered with at least one sheet of hydrophobic porous material having a thin thickness so as to serve as a membrane. The hydrophobic porous material has pores with predetermined dimensions so as to resist any fluid in its liquid state from passing therethrough but to allow passage of the fluid in its vapor state, thereby, causing the evaporation of the fluid and the cooling of the remaining fluid. The fluid has a predetermined flow rate. The evaporative cooling membrane device has a channel which is sized in cooperation with the predetermined flow rate of the fluid so as to produce laminar flow therein. The evaporative cooling membrane device provides for the convenient control of the evaporation rates of the circulating fluid by adjusting the flow rates of the laminar flowing fluid.

Lomax, Curtis↗
NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Neudeck, Philip G.↗
NASA NTRS1999

Subsonic Aerodynamic Assessment of Vortex Flow Management Devices on a High-Speed Civil Transport Configuration

An experimental investigation of the effects of leading-edge vortex management devices on the subsonic performance of a high-speed civil transport (HSCT) configuration was conducted in the Langley 14- by 22-Foot Subsonic Tunnel. Data were obtained over a Mach number range of 0.14 to 0.27, with corresponding chord Reynolds numbers of 3.08 x 10 (sup 6) to 5.47 x 10 (sup 6). The test model was designed for a cruise Mach number of 2.7. During the subsonic high-lift phase of flight, vortical flow dominates the upper surface flow structure, and during vortex breakdown, this flow causes adverse pitch-up and a reduction of usable lift. The experimental results showed that the beneficial effects of small leading-edge vortex management devices located near the model reference center were insufficient to substantially affect the resulting aerodynamic forces and moments. However, devices located at or near the wiring apex region demonstrated potential for pitch control with little effect on overall lift.

Campbell, Bryan A.↗
NASA NTRS1999

Materials and Device Optimization for High Power SiGe HBT Amplifiers at X-Band Frequencies

The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.

Mueller, C. H.↗
NASA NTRS1999

Adaptive Mesh Refinement for Microelectronic Device Design

Finite element and finite volume methods are used in a variety of design simulations when it is necessary to compute fields throughout regions that contain varying materials or geometry. Convergence of the simulation can be assessed by uniformly increasing the mesh density until an observable quantity stabilizes. Depending on the electrical size of the problem, uniform refinement of the mesh may be computationally infeasible due to memory limitations. Similarly, depending on the geometric complexity of the object being modeled, uniform refinement can be inefficient since regions that do not need refinement add to the computational expense. In either case, convergence to the correct (measured) solution is not guaranteed. Adaptive mesh refinement methods attempt to selectively refine the region of the mesh that is estimated to contain proportionally higher solution errors. The refinement may be obtained by decreasing the element size (h-refinement), by increasing the order of the element (p-refinement) or by a combination of the two (h-p refinement). A successful adaptive strategy refines the mesh to produce an accurate solution measured against the correct fields without undue computational expense. This is accomplished by the use of a) reliable a posteriori error estimates, b) hierarchal elements, and c) automatic adaptive mesh generation. Adaptive methods are also useful when problems with multi-scale field variations are encountered. These occur in active electronic devices that have thin doped layers and also when mixed physics is used in the calculation. The mesh needs to be fine at and near the thin layer to capture rapid field or charge variations, but can coarsen away from these layers where field variations smoothen and charge densities are uniform. This poster will present an adaptive mesh refinement package that runs on parallel computers and is applied to specific microelectronic device simulations. Passive sensors that operate in the infrared portion of the spectrum as well as active device simulations that model charge transport and Maxwell's equations will be presented.

Cwik, Tom↗
NASA NTRS2000

Precision of Four Acoustic Bone Measurement Devices

Though many studies have quantified the precision of various acoustic bone measurement devices, it is difficult to directly compare the results among the studies, because they used disparate subject pools, did not specify the estimation methodology, or did not use consistent definitions for various precision characteristics. In this study, we used a repeated measures design protocol to directly determine the precision characteristics of four acoustic bone measurement devices: the Mechanical Response Tissue Analyzer (MRTA), the UBA-575+, the SoundScan 2000 (S2000), and the Sahara Ultrasound Done Analyzer. Ten men and ten women were scanned on all four devices by two different operators at five discrete time points: Week 1, Week 2, Week 3, Month 3 and Month 6. The percent coefficient of variation (%CV) and standardized coefficient of variation were computed for the following precision characteristics: interoperator effect, operator-subject interaction, short-term error variance, and long-term drift, The MRTA had high interoperator errors for its ulnar and tibial stiffness measures and a large long-term drift in its tibial stiffness measurement. The UBA-575+ exhibited large short-term error variances and long-term drift for all three of its measurements. The S2000's tibial speed of sound measurement showed a high short-term error variance and a significant operator-subject interaction but very good values ( < 1%) for the other precision characteristics. The Sahara seemed to have the best overall performance, but was hampered by a large %CV for short-term error variance in its broadband ultrasound attenuation measure.

Miller, Christopher↗
NASA NTRS2000

Precision of Four Acoustic Bone Measurement Devices

Though many studies have quantified the precision of various acoustic bone measurement devices, it is difficult to directly compare the results among the studies, because they used disparate subject pools, did not specify the estimation methodology, or did not use consistent definitions for various precision characteristics. In this study, we used a repeated measures design protocol to directly determine the precision characteristics of four acoustic bone measurement devices: the Mechanical Response Tissue Analyzer (MRTA), the UBA-575+, the SoundScan 2000 (S2000), and the Sahara Ultrasound Bone Analyzer. Ten men and ten women were scanned on all four devices by two different operators at five discrete time points: Week 1, Week 2, Week 3, Month 3 and Month 6. The percent coefficient of variation (%CV) and standardized coefficient of variation were computed for the following precision characteristics: interoperator effect, operator-subject interaction, short-term error variance, and long-term drift. The MRTA had high interoperator errors for its ulnar and tibial stiffness measures and a large long-term drift in its tibial stiffness measurement. The UBA-575+ exhibited large short-term error variances and long-term drift for all three of its measurements. The S2000's tibial speed of sound measurement showed a high short-term error variance and a significant operator-subject interaction but very good values (less than 1%) for the other precision characteristics. The Sahara seemed to have the best overall performance, but was hampered by a large %CV for short-term error variance in its broadband ultrasound attenuation measure.

Miller, Christopher↗
NASA NTRS2000

'Atomistic' Simulation of Decanano Devices

When the devices are scaled to decanano dimensions the discreteness of charge and matter introduces significant 'intrinsic' parameter fluctuations. Atomic level 3D process and device modelling on statistical scale is required to understand the effects, the scale of the fluctuations and to design fluctuation resistant devices.

Asenov, Asen↗
NASA NTRS2000

Compound Semiconductor Devices for Space Applications

Application of semiconductor devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected devices. This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.

Kayali, Sammy↗
NASA NTRS2001

System Miniaturization Via Heterogeneous Integration of Electronic Devices for Deep Space Missions

The scientific devices designed for each of the Outer Planets Program Focuses will likely be groundbreaking not only with respect to their scientific role but also regarding the electronics required to perform such investigations. In the past, the performance of packaged electronics was limited by the components themselves, with minimal influence of the packaging technology. The rapid development of integrated circuit technology, however, has drastically increased the importance of packaging technology in the ultimate performance of devices. If not carefully considered in the overall design, the packaging may become the limiting factor in the operation of the system. Although industry is responsible for several significant accomplishments in the field of electronics packaging, deep space/outer planet missions must take into account additional requirements such as extremely low temperatures, high radiation levels, hermetic sealing, and severe size and weight limitations. Therefore, the present investigation has been designed to meet the needs of NASA's sensor intensive outer planets program by combining (using flip chip technology) an array of devices (including analog, digital, power volt-age, passives, and MEMS) into a miniaturized heterogeneous system and utilizing optical buses to enable autonomy. Additional information is contained in the original extended abstract.

DelCastillo, L.↗
NASA NTRS2001

Microencapsulation and Electrostatic Processing Device

A microencapsulation and electrostatic processing (MEP) device is provided for forming microcapsules. In one embodiment, the device comprises a chamber having a filter which separates a first region in the chamber from a second region in the chamber. An aqueous solution is introduced into the first region through an inlet port, and a hydrocarbon/ polymer solution is introduced into the second region through another inlet port. The filter acts to stabilize the interface and suppress mixing between the two immiscible solutions as they are being introduced into their respective regions. After the solutions have been introduced and have become quiescent, the interface is gently separated from the filter. At this point, spontaneous formation of microcapsules at the interface may begin to occur, or some fluid motion may be provided to induce microcapsule formation. In any case, the fluid shear force at the interface is limited to less than 100 dynes/sq cm. This low-shear approach to microcapsule formation yields microcapsules with good sphericity and desirable size distribution. The MEP device is also capable of downstream processing of microcapsules, including rinsing, re-suspension in tertiary fluids, electrostatic deposition of ancillary coatings, and free-fluid electrophoretic separation of charged microcapsules.

Morrison, Dennis R.↗
NASA NTRS2001

Rotary Wing Flight Test Methods Used for the Evaluation of Night Vision Devices

A number of rotary wing flight tests have been conducted by the Army Aeroflightdynamics Directorate in cooperation with NASA which involved the use of night vision devices and simulated devices. The test set up and data analysis have been taken from two perspectives. Some of the flight tests were structured to look at aircraft handling qualities when the pilot's image quality was reduced from normal daylight levels. In this case, aircraft flight path information was given to the pilot as one input into the Handling Qualities Ratings. Other flight tests were structured to look at pilot and workload directly. In this second case, aircraft position was accurately measured and used as pilot performance data. This paper provides an overview of the test methods used, lessons learned, and recommendations for future tam of night vision devices.

Haworth, Loran↗
NASA NTRS2001

NASA Electronic Parts and Packaging (NEPP): Space Qualification Guidelines of Optoelectronic and Photonic Devices for Optical Communication Systems

Key elements of space qualification of opto-electric and photonic optical devices were overviewed. Efforts were concentrated on the reliability concerns of the devices needed for potential applications in space environments. The ultimate goal for this effort is to gradually establish enough data to develop a space qualification plan of newly developed specific photonic parts using empirical and numerical models to assess the life-time and degradation of the devices for potential long term space missions.

Kim, Quiesup↗
NASA NTRS1995

Computational Flow Analysis of a Left Ventricular Assist Device

Computational fluid dynamics has been developed to a level where it has become an Indispensable part of aerospace research and design. Technology developed foe aerospace applications am also be utilized for the benefit of human health. For example, a flange-to-flange rocket engine fuel-pump simulation includes the rotating and non-rotating components: the flow straighteners, the impeller, and diffusers A Ventricular Assist Device developed by NASA Johnson Space Center and Baylor College of Medicine has a design similar to a rocket engine fuel pump in that it also consists of a flow straightener, an impeller, and a diffuser. Accurate and detailed knowledge of the flowfield obtained by incompressible flow calculations can be greatly beneficial to designers in their effort to reduce the cost and improve the reliability of these devices. In addition to the geometric complexities, a variety of flow phenomena are encountered in biofluids Then include turbulent boundary layer separation, wakes, transition, tip vortex resolution, three-dimensional effects, and Reynolds number effects. In order to increase the role of Computational Fluid Dynamics (CFD) in the design process the CFD analysis tools must be evaluated and validated so that designers gain Confidence in their use. The incompressible flow solver, INS3D, has been applied to flow inside of a liquid rocket engine turbopump components and extensively validated. This paper details how the computational flow simulation capability developed for liquid rocket engine pump component analysis has bean applied to the Left Ventricular Assist Device being developed jointly by NASA JSC and Baylor College of Medicine.

Kiris, Cetin↗
NASA NTRS2000

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane↗
NASA NTRS2002

Dynamic Analysis of Capture Devices for Momentum Exchange with Tethers

One of the significant challenges in developing a momentum exchange / electrodynamic reboost tether system is in the analysis and design of the capture device and its effects on the overall dynamics of the system. The goal of this work is to develop appropriate tether momentum exchange models that can simulate and evaluate the requirements of such a system, and be used to create specifications on the design of a capture device. This report briefly describes dynamic model development, simulation of the momentum exchange process, evaluation of dynamic effects of errors in the momentum exchange process, and the development of guidelines in selecting dynamic properties in the design of a capture device.

Stephen Canfield↗