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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

PHLPP1 regulates contact inhibition by dephosphorylating Mst1 at the inhibitory site

Highlights: • PHLPP1 regulates contact inhibition by dephosphorylating Mst1 at Thr{sup 387}. • Overexpression of PHLPP1 sensitizes contact inhibition. • Tumor cells with suppressed PHLPP1 expression are refractory to apoptosis and highly proliferative. • Loss or down-regulation of PHLPP1 may drive tumor development and progression. - Abstract: Contact inhibition has been largely elusive despite that a loss of contact inhibition is a critical event for cancer development and progression. Here, we report that PHLPP1 is a binding protein for Mst1 and it modulates the Hippo pathway by dephosphorylating Mst1 at the inhibitory Thr{sup 387} of Mst1. Yap1 was localized predominantly in the nucleus but marginally in the cytoplasm in HeLa cells under sparse conditions, whereas the functional protein was more directed to sequestration in the cytoplasm under dense environments. Furthermore, loss of PHLPP1 resulted in a failure of the apoptotic control. It is interesting that down-regulated expression of PHLPP1 appears to mimic the loss of contact inhibition, a hallmark of cancer.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

Keratinocytes negatively regulate the N-cadherin levels of melanoma cells via contact-mediated calcium regulation

Highlights: • Human keratinocyte cells reduce the N-cadherin levels of co-cultured melanoma cells. • Cell-to-cell contact is necessary for this keratinocyte-mediated N-cadherin reduction. • Keratinocytes reduce intracellular calcium in co-cultured melanoma cells. • Keratinocytes reduce the expression of TRPCs in contacting melanoma cells. In human skin, melanocytes and their neighboring keratinocytes have a close functional interrelationship. Keratinocytes, which represent the prevalent cell type of human skin, regulate melanocytes through various mechanisms. Here, we use a keratinocyte and melanoma co-culture system to show for the first time that keratinocytes regulate the cell surface expression of N-cadherin through cell-cell contact. Compared to mono-cultured human melanoma A375 cells, which expressed high levels of N-cadherin, those co-cultured with the HaCaT human keratinocyte cell line showed reduced levels of N-cadherin. This reduction was most evident in areas of A375 cells that underwent cell-cell contact with the HaCaT cells, whereas HaCaT cell-derived extracellular matrix and conditioned medium both failed to reduce N-cadherin levels. The intracellular level of calcium in co-cultured A375 cells was lower than that in mono-cultured A375 cells, and treatment with a cell-permeant calcium chelator (BAPTA) reduced the N-cadherin level of mono-cultured A375 cells. Furthermore, co-culture with HaCaT cells reduced the expression levels of transient receptor potential cation channel (TRPC) 1, −3 and −6 in A375 cells, and siRNA-mediated multi-depletion of TRPC1, -3 and -6 reduced the N-cadherin level in these cells. Taken together, these data suggest that keratinocytes negatively regulate the N-cadherin levels of melanoma cells via cell-to-cell contact-mediated calcium regulation.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

Thermal resistance of pressed contacts of aluminum and niobium at liquid helium temperatures

Here, we examine the resistance to heat flow across contacts of mechanically pressed aluminum and niobium near liquid helium temperatures for designing a thermally conducting joint of aluminum and superconducting niobium. Measurements in the temperature range of 3.5 K to 5.5 K show the thermal contact resistance to grow as a near-cubic function of decreasing temperature, indicating phonons to be the primary heat carriers across the interface. In the 4 kN to 14 kN range of pressing force the contact resistance shows linear drop with the increasing force, in agreement with the model of micro-asperity plastic deformation at pressed contacts. Several thermal contact resistance models as well as the phonon diffuse mismatch model of interface thermal resistance are compared with the experimental data. The diffuse mismatch model shows closest agreement. The joints are further augmented with thin foil of indium, which lowers the joint resistance by an order of magnitude. The developed joint has nearly 1 K*cm2/W of thermal resistance at 4.2 K, is demountable, and free of the thermally resistive interfacial alloy layer that typically exists at welded, casted, or soldered joints of dissimilar metals.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

GaAs Thermophotovoltaic Patterned Dielectric Back Contact Devices with Improved Sub-Bandgap Reflectance

We demonstrate GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. We explore different PDBC fabrication processes with SU-8 and SiO2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency. We successfully demonstrate GaAs SU-8 PDBC TPV devices with 2200 degrees C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively. This is 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicates the front grid induces light scattering leading to additional parasitic absorption in the TPV device. We also show that for higher contact coverage fractions, the PDBC reflectance cannot in general be treated by a linear interpolation using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D.

energy storage↗
DOE OSTI2018

Oxysterol-binding protein-related protein (ORP) 6 localizes to the ER and ER-plasma membrane contact sites and is involved in the turnover of PI4P in cerebellar granule neurons

Oxysterol-binding protein (OSBP)-related proteins (ORPs) are conserved lipid binding proteins found in organisms ranging from yeast to mammals. Recent findings have indicated that these proteins mainly localize to contact sites of 2 different membranous organelles. ORP6, a member of the ORP subfamily III, is one of the least studied ORPs. Using approaches in molecular cell biology, we attempted to study the characteristics of ORP6 and found that ORP6 is abundantly expressed in mouse cultured neurons. Deconvolution microscopy of cultured cerebellar granular cells revealed that ORP6 is localized to the endoplasmic reticulum (ER) and ER–plasma membrane (PM) contact sites, where it co-localized with extended synaptotagmin2 (E-Syt2), a well-known ER–PM contact site marker. E-Syt2 also co-localized with ORP3, another subfamily III member, and ORP5, a subfamily IV member. However, ORP5 does not distribute to the same ER-PM contact sites as subfamily III members. Also, the co-expression of ORP3 but not ORP5 altered the distribution of ORP6 into the processes of cerebellar neurons. Immunoprecipitation demonstrated binding between the intermediate region of ORP6 and ORP3 or ORP6 itself. Additionally, the localization of ORP6 in the PM decreased when co-expressed with the intermediate region of ORP6, in which the pleckstrin homology (PH) domain and OSBP-related ligand binding domain (ORD) are deleted. Over-expression of this intermediate region shifted the location of a phophtidylinositol-4-phosphate (PI4P) marker from the Golgi to the PM. Knockdown of ORP6 resulted in the same shift of the PI4P marker. Collectively, our data suggests that the recruitment of ORP6 to ER–PM contact sites is involved in the turnover of PI4P in cerebellar granular neurons.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Combinatorial chemical bath deposition of CdS contacts for chalcogenide photovoltaics

Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se 2 (CIGSe) and Cu 2 ZnSnSe 4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. Finally, the results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

14 SOLAR ENERGY↗
DOE OSTI2025

Contact with Electrically Conductive Inert Solids Alters Intrinsic Heterogeneous Brønsted Acid Catalysis

Interfacial electric fields at heterogeneous catalyst surfaces have been demonstrated to alter kinetics of liquid-phase reactions. In these systems, electric fields are generated from applying a potential to the catalyst through connection to a potentiostat or through electron transfer from redox-active species in solution. Here, we demonstrate that catalyst polarization can also occur by simply contacting electrically conductive inert solids, leading to the counterintuitive conclusion that a catalyst particle touching an inert solid can alter intrinsic reaction rates. Using dehydration of 1-methylcyclopentanol to 1-methylcyclopentene catalyzed by Brønsted-acidic carboxylic acid groups on carbon nanotubes as a proof-of-concept probe reaction, we show that catalyst contact with inert, thermally reduced carbon nanotubes leads to order-of-magnitude changes in reaction rate. Furthermore, we demonstrate that these contact-induced effects can also be observed under standard laboratory reaction conditions, where particle-to-particle contact in stirred catalyst powder suspensions is sufficient to demote rates by ∼8-fold. This work provides the foundation for a new method of reaction rate control, which could have implications whenever heterogeneous catalyst particles are in contact with inert materials for liquid-phase reactions in the presence of electrolyte.

Alcohols↗
DOE OSTI2025

Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×

36 MATERIALS SCIENCE↗
DOE OSTI2013

A new technique for direct traceability of contact thermometry Co-C eutectic cells to the ITS-90

The eutectic Co-C melting point is a promising system to serve as a thermometric fixed-point in the temperature range above 1084.62 °C (copper freezing point). During the last decade, LNE-Cnam has developed and characterized some fixed-point devices, based on eutectic Co-C alloy, for applications to contact and radiation thermometry. Above 962 °C, the ITS-90 is realized by radiation thermometry by the extrapolation from a Ag, Au or Cu fixed point using the Planck law for radiation. So the only way for assigning a temperature in the scale to a Co-C cell (∼1324 °C) is by radiation thermometry. An indirect method is commonly used to assign a temperature to a high-temperature fixed point (HTFP) cell designed for contact thermometry is to fill a pyrometric cell with the same mixture as the contact thermometry cell. In this case, the temperature assigned to the pyrometric cell is attributed to the contact cell. This paper describes a direct method allowing the determination of the melting temperature realized by a 'contact thermometry' Co-C cell by comparison to a 'radiation thermometry' Co-C cell whose melting temperature was assigned in accordance to the scale by extrapolation from the Cu point. In addition, the same Co-C cell is studied with a standard Pt/Pd thermocouple.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρ{sub C}, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρ{sub C} exhibits a “metal-like” behavior, i.e., describable by a T{sup 1.8} dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand the tunneling transport mechanism between the metal contacts and the semiconductor. Different contact metallization and anneal process windows are investigated to achieve optimal penetration depth of Au in GaSb for low resistances. The fabrication, electrical characterization, and microstructure analysis of the metal-semiconductor interfaces created during ohmic contact formation are discussed. The characterization techniques include cross-sectional transmission electron microscopy and energy dispersive spectroscopy. Specific transfer resistances down to 0.1 Ω mm and specific contact resistances of 1 × 10{sup −6} Ω cm{sup 2} are observed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Neutron irradiation effects on metal-gallium nitride contacts

We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15} n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15} n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16} n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Silver antimony Ohmic contacts to moderately doped n-type germanium

A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A study of the glow discharge characteristics of contact electrodes at atmospheric pressure in air

Electric field distributions and discharge properties of rod-rod contact electrodes were studied under the condition of DBD for the steady generation of atmospheric pressure glow discharge plasma (APGD) in air. We found that under the effect of the initial electrons generated in a nanometer-scale gap, the rod-rod cross-contact electrodes yielded APGD plasma in air. Regarding the rod-rod cross-contact electrodes, increasing the working voltage expanded the strong electric field area of the gas gap so that both discharge area and discharge power increased, and the increase in the number of contact points kept the initial discharge voltage unchanged and caused an increase in the plasma discharge area and discharge power. A mesh-like structure of cross-contact electrodes was designed and used to generate more APGD plasma, suggesting high applicability.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Role of chemical termination in edge contact to graphene

Edge contacts to graphene can offer excellent contact properties. Role of different chemical terminations is examined by using ab initio density functional theory and quantum transport simulations. It is found that edge termination by group VI elements O and S offers considerably lower contact resistance compared to H and group VII element F. The results can be understood by significantly larger binding energy and shorter binding distance between the metal contact and these group VI elements, which results in considerably lower interface potential barrier and larger transmission. The qualitative conclusion applies to a variety of contact metal materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High-speed adaptive contact-mode atomic force microscopy imaging with near-minimum-force

In this paper, an adaptive contact-mode imaging approach is proposed to replace the traditional contact-mode imaging by addressing the major concerns in both the speed and the force exerted to the sample. The speed of the traditional contact-mode imaging is largely limited by the need to maintain precision tracking of the sample topography over the entire imaged sample surface, while large image distortion and excessive probe-sample interaction force occur during high-speed imaging. In this work, first, the image distortion caused by the topography tracking error is accounted for in the topography quantification. Second, the quantified sample topography is utilized in a gradient-based optimization method to adjust the cantilever deflection set-point for each scanline closely around the minimal level needed for maintaining stable probe-sample contact, and a data-driven iterative feedforward control that utilizes a prediction of the next-line topography is integrated to the topography feeedback loop to enhance the sample topography tracking. The proposed approach is demonstrated and evaluated through imaging a calibration sample of square pitches at both high speeds (e.g., scan rate of 75 Hz and 130 Hz) and large sizes (e.g., scan size of 30 μm and 80 μm). The experimental results show that compared to the traditional constant-force contact-mode imaging, the imaging speed can be increased by over 30 folds (with the scanning speed at 13 mm/s), and the probe-sample interaction force can be reduced by more than 15% while maintaining the same image quality.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Measurement and understanding of single-molecule break junction rectification caused by asymmetric contacts

The contact effects of single-molecule break junctions on rectification behaviors were experimentally explored by a systematic control of anchoring groups of 1,4-disubstituted benzene molecular junctions. Single-molecule conductance and I-V characteristic measurements reveal a strong correlation between rectifying effects and the asymmetry in contacts. Analysis using energy band models and I-V calculations suggested that the rectification behavior is mainly caused by asymmetric coupling strengths at the two contact interfaces. Fitting of the rectification ratio by a modified Simmons model we developed suggests asymmetry in potential drop across the asymmetric anchoring groups as the mechanism of rectifying I-V behavior. This study provides direct experimental evidence and sheds light on the mechanisms of rectification behavior induced simply by contact asymmetry, which serves as an aid to interpret future single-molecule electronic behavior involved with asymmetric contact conformation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1−x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ{sub B} ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ{sub B} ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ{sub B} ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

36 MATERIALS SCIENCE↗