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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

A heater made from graphite composite material for potential deicing application

A surface heater was developed using a graphite fiber-epoxy composite as the heating element. This heater can be thin, highly electrically and thermally conductive, and can conform to an irregular surface. Therefore it may be used in an aircraft's thermal deicing system to quickly and uniformly heat the aircraft surface. One-ply of unidirectional graphite fiber-epoxy composite was laminated between two plies of fiber glass-epoxy composite, with nickel foil contacting the end portions of the composite and partly exposed beyond the composites for electrical contact. The model heater used brominated P-100 fibers from Amoco. The fiber's electrical resistivity, thermal conductivity and density were 50 micro ohms per centimenter, 270 W/m-K and 2.30 gm/cubic cm, respectively. The electricity was found to penetrate through the composite in the transverse direction to make an acceptably low foil-composite contact resistance. When conducting current, the heater temperature increase reached 50 percent of the steady state value within 20 sec. There was no overheating at the ends of the heater provided there was no water corrosion. If the foil-composite bonding failed during storage, liquid water exposure was found to oxidize the foil. Such bonding failure may be avoided if perforated nickel foil is used, so that the composite plies can bond to each other through the perforated holes and therefore lock the foil in place.

Hung, Ching-Cheh↗
DOE OSTI2026

Multiscale Characterization of Electrode-Induced Degradation in Perovskite Solar Cells

The stability of metal-halide-perovskite (MHP) solar cells must be understood and improved for the commercial viability of MHP technologies. Here, we apply multiscale characterization methods to study degradation modes, specifically electrode corrosion, for p-i-n MHP partial device stacks and full devices that are stored in the dark under an inert atmosphere. Our multiscale characterization approaches include full-device electro-optical performance using current-voltage (JV) curves and spatial imaging with electroluminescence (EL) and photoluminescence (PL). We further correlate interface properties using cross-sectional Kelvin probe force microscopy, which maps the nanoscale electric field properties, and electron microscopy, which demonstrates structural and chemical features. Devices stored as a full device stack degrade primarily by metal (Ag) electrode diffusion into the absorber, with formation of AgI byproducts and Ag accumulation near the indium tin oxide (ITO) contact. This causes decomposition of the perovskite absorber domains, loss of the potential drop at the electron transport layer (ETL)/perovskite interface near the metal contact, and increased equivalent resistance at the perovskite/hole transport layer (HTL) interface near the ITO contact. The devices stored without metal show a different degradation pathway dominated by corrosion of the ITO, creating voids at the ITO electrode surface with diffusion of In and Sn into the absorber. We conclude that metal electrode-induced degradation is the most severe degradation pathway under dark storage, but that ITO corrosion and absorber instability must also be mitigated. We further demonstrate mitigation of these degradation pathways by changes to the device stack, including a SnO x blocking layer at the ETL side and replacing ITO with FTO at the HTL side. These results provide a useful demonstration of specific dark degradation pathways at each electrode interface, as well as a unique multiscale example that links degradation of chemical, structural, and electrical interface properties to the full-device electro-optical characteristics.

14 SOLAR ENERGY↗
DOE OSTI2025

Manganese‐Based Spinel Cathodes: A Promising Frontier for Solid‐State Lithium‐Ion Batteries

Recently, all-solid-state lithium-ion batteries (ASSLIBs), which exhibit improved safety and enhanced energy density compared to conventional commercialized lithium-ion batteries (LIBs), thereby have garnered extensive research interest. Among the promising cathode candidates, Mn-based spinel cathodes LiMn 2 O 4 (LMO) and LiNi 0.5 Mn 1.5 O 4 (LNMO), with the unique characteristics of low cost, structural stability, and 3D Li-ion diffusion channels, have demonstrated excellent performance in LIBs and presented great potential in ASSLIBs applications. However, several challenges, including structural degradations, poor interfacial contact, large interfacial resistance, and Mn-dissolution/diffusion during the electrochemical cycling, hinder their practical applications and commercialization in the ASSLIBs. Particularly, the high-voltage LNMO cathodes suffer from the challenge of electrochemical incompatibility with most of the solid-state electrolytes (SSEs). Herein, the spinel structure, the electrochemical behavior, and the structural degradation of the LMO/LNMO are explored. The characteristics and recent progress of the mitigating strategies to the challenges of various SSEs, including polymer-, oxide-, composite-, sulfide-, halide-, and LiPON-based SSEs, are introduced when paired with LMO/LNMO. Finally, the directions for future research to advance Mn-based spinel cathodes and fulfill the requirements of the next-generation ASSLIBs are also discussed.

Dou, Yu [Concordia University, Montreal, QC (Canad↗
DOE OSTI2025

Bipolar transport in diamond under photo-excitation: Evidence of free charge scattering by excitons

The fundamental characteristics of the Coulomb e-h interactions in ultra-pure diamond are investigated through time-resolved photoconductivity measurements in homogeneously photoexcited samples with ohmic-like low resistive B + sandwich contacts. Here, we demonstrate that, in the electric field, the bipolar charge mobility exhibits drastic reduction for photo-injected densities of 10 14 ‐10 16 cm ‐3 that cannot be explained only by mutual scattering between free e-h particles. This phenomenon is clarified by adding scattering caused by excitons whose density grows in the photo-exited system. The comparison of drift mobilities at 300 K in diamond obtained in this study and in pure Si and Ge obtained from literature, where exciton scattering is insignificant, is presented. We derive the empirical expression for the density dependences of bipolar mobility for the electric fields up to 1 kV/cm that could be useful for the development of diamond electronic devices.

Bipolar drift↗
DOE OSTI2024

Alternating conduction and convection drying of paper – an experimental analysis with a continuous data acquisition approach

In conventional multi-cylinder drying of paper and board, both conductive drying from steam-heated dryer cylinders and convective drying by flowing air over the paper surface in the pockets are used. Conductive drying from steam-heated drying cylinders is a critical component in providing the necessary thermal energy to paper and board as they dry. Steam temperature and internal and external resistances at the contacting surface are critical process parameters influencing the conductive drying process. An experimental setup was developed to study the alternating conductive and convective drying of paper and board. Paper sheet moisture, temperature, and temperature distribution within the heated platen and the instantaneous heat flux as the sheet was being dried were measured. The instantaneous heat flux, contact heat transfer coefficient, and drying rates were determined as drying proceeds. Experimental results, as well as comparisons to literature and commercial data, are presented. The conductive heat transfer coefficients determined were compared to traditional correlations normally used in the modeling of paper drying. Similarly, the convective heat and mass transfer coefficients are also determined and compared to literature data. In addition to the evaluation of alternating conductive and convective drying characteristics of paper and board, the potential inclusion of auxiliary energy components will also be included. Experimental results from the conduction and convection drying system are presented. Furthermore, this data will be useful in process development, intensification of manufacturing processes, and modeling and simulation of paper drying processes.

42 ENGINEERING↗
DOE OSTI2020

The influence of boundary and edge-plasma modeling in computations of axisymmetric vertical displacement

A number of previously published studies apply extended-MHD computations to model macroscopic dynamics of tokamak vertical displacement events (VDEs). The characteristic plasma-wall contact and resistive-wall diffusion imply sensitivity to boundary conditions in a general sense, but which conditions have significant influence depends on how the plasma is modeled. This work examines these dependencies by comparing results of axisymmetric extended-MHD computations with different sets of boundary conditions, plasma thermal-conduction models, and wall resistivity values. The geometry and plasma parameters of the computations represent a modest-sized tokamak. The forced-displacement scenario and computational setup are similar to those used in previous 3D computations. The results show that for a given wall resistivity, the VDE time-scale is most sensitive to variations in the boundary and thermal-conduction parameters that affect electron thermal transport. The electrical conductivity depends on electron temperature, and the dependence on thermal transport stems from its influence on the electrical circuit that includes the open-field halo current. Lastly, conditions that lead to hotter, broader halo regions slow the evolution. Significant sensitivity to the boundary condition on plasma flow-velocity exists when electron thermal conduction is restricted and electron energy loss is convective, which is expected for conditions at the entrance of the magnetic presheath.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1979

Summary of GaAs Solar Cell Performance and Radiation Damage Workshop

The workshop considered the GaAs solar cell capability and promise in several steps: (1) maximum efficiency; (2) space application; (3) major technology problems (AR coating optimization, contacts); (4) radiation resistance; (5) cost and availability; and (6) alternatives. The workshop believes that GaAs solar cells are fast approaching the fulfillment of their potential as candidates for space cells. A maximum efficiency of 20 to 31 percent AMO can be reasonably expected from GaAs based cells, and this may go a little higher with concentration. The use of concentration in space needs to be more carefully evaluated.

Kamath, G. S.↗
NASA NTRS1983

Iron-copper metallization for flexible solar/cell arrays

The feasibility of a copper-base metallization for shallow-junction cells applied in flexible solar arrays in space is discussed. This type of metallization will reduce usage of precious metals (such as silver), increase case of bonding (by welding or by soldering) and eliminate heavy high Z interconnects (such as molybdenum). The main points of concern are stability against thermally induced diffusion of copper into silicon which causes degradation of shallow cell junctions, and low series resistance of the contact with semiconductor which promotes cell efficiency.

Lavendel, H. W.↗
NASA NTRS1992

Modeling, design, fabrication, and testing of InP Gunn devices in the D-band (110 GHz - 170 GHz)

The development of fundamental Gunn sources for D-band frequencies requires improvements of doping profiles, processing technology, and circuit design. We have developed a technology for fabricating InP Gunn diodes using an InGaAs etch-stop layer between the InP substrate and the device layers. The epitaxial layers were grown by CBE. During device processing, the substrate is completely removed. Substrateless devices with an n(+) InGaAs cap layer are expected to have reduced contact and series resistances, and skin effect losses. This technology gives better uniformity and control of the device geometry across the processed chip. InP Gunn devices with a 1.7 micron long active region (doping : 9 x 10(exp 15) cm(exp -3)) have been mounted on copper heat sinks. Two tapered leads were then bonded to the diode and to four quartz standoffs. As a preliminary result, an output power of 13 mW at 82 GHz was obtained. Based on these RF measurements, we determine appropriate material parameters to be used in the Ensemble Monte Carlo model. Subsequently, we use this model to design and evaluate the performance of InP Gunn Devices for D-band frequencies. Using the same technology, we are currently processing Gunn devices with a 1 micron long active region for operation at higher frequencies.

Kamoua, R.↗
NASA NTRSDate not supplied

Multiscale Prediction of Yarn Pullout Failure Mode in Unreinforced Textile Fabrics

Unreinforced woven fabrics have been implemented in a variety of high performance applications, including body armor, deployable structures, and as the reinforcement material in composites. Multiscale modeling techniques have significantly improved the capabilities of simulation-based tools to capture fabric mechanics efficiently and accurately, but often lack in their prediction of failure and require pairing with finite element analysis (FEA) software, limiting their application to the design of ‘fit-for-purpose’ materials. NASA’s Multiscale Analysis Tool (NASMAT) is a standalone multiscale program that has been traditionally used in the analysis of reinforced composites materials. More recently, it has been amended to simulate unreinforced fabric behavior by allowing the geometric state of the tows to change with applied loading due to the lack of a reinforcement material, such as the matrix seen in composites. Previous work has shown the ability of NASMAT to capture nonlinear macroscale behavior by predicting geometric changes in the state of each subcell as a function of the applied loading and allowing each subcell in the analysis to rotate according to these predicted changes, as well as predict nonlinear behavior due to the fiber breakage failure mode. In this work, the capability of predicting the onset and propagation of failure in plain woven fabrics in NASMAT is presented for the yarn pullout failure mode, which occurs when a fabric is loaded at an off-axis angle relative to the warp of weft tow direction. Yarn pullout behavior is initiated by determining the applied load in which the shear resistance of the contact area between yarn families is overcome. When failure is initiated, yarn pullout is determined to have occurred when the applied displacement, calculated from global strain, exceeds the deformed position of a given contact points between yarn families, determined from pin-joint kinematics. Contact points where pullout has occurred contribute to a global damage parameter used to modify the homogenized stiffness of the fabric, resulting in nonlinear behavior observed at the macroscale. The off-axis loading behavior and yarn pullout failure theory have been developed and implemented into NASMAT such that users can simulate off-axis tensile behavior of fabrics in a single, standalone multiscale tool. Simulations are compared to uniaxial tensile tests at various off-axis angles to demonstrate the capability of the tool in its prediction of both the onset of failure at each off-axis angles and the stress-strain behavior as failure progresses.

Materials↗
NASA NTRS1972

A reliable all-silver front contact for silicon solar cells.

Methods have been found to apply an adherent and humidity resistant silver-only front contact to n on p silicon solar cells. The critical processing step was the removal of the diffused oxide layer. Humidity resistance is superior to present day commercial titanium-silver contacts and the electrical characteristics of the cells are excellent. Titanium, which is degraded by humidity and which is a source of heavy metal poisoning, has been eliminated from the contact.

Lamneck, J. H., Jr.↗
DOE OSTI2023

Investigation of Reactive Silver Ink Formula for Reduced Silver Consumption in Silicon Heterojunction Metallization

Silver is the most expensive non-silicon component in photovoltaic cells. This is particularly salient for silicon heterojunction (SHJ) cells, which rely on large quantities of low-temperature silver pastes (LT-SP). SHJ cells would benefit greatly from an industrially scalable metallization process that simultaneously offers low silver consumption, low finger resistivities (<20 μΩ·cm), and low processing temperatures. Printed reactive silver inks (RSI) are an innovative candidate to this end. Furthermore, this work furthers the research on RSI metallization by investigating the impact of ink formula on properties pertinent to SHJ cells, including electrical properties, line width, ink splatter, silver consumption, cell performance, and adhesion. We introduce a scalable, high-throughput flexible needle contact printing approach for metallization that solves many of the issues associated with drop-on-demand printing. The printed silver fingers are characterized using electrical measurements and top-down and cross-sectional microscopy. The best performing ink, consisting of silver acetate, ethylamine, and formic acid, achieved silver fingers with total resistivities of 3.1 μΩ·cm and contact resistivities of 3.2 mΩ·cm 2 when printed at 61 °C. This ink metallized a full-sized 156 mm × 156 mm SHJ cell. This is the first reported data for RSI metallization of a full-sized SHJ cell and shows how an optimized RSI can achieve similar performances to LT-SP while consuming 80–90% less silver.

14 SOLAR ENERGY↗
NASA NTRS1993

Near-contact diffusion and compensation in extrinsic photoconductors

Carrier diffusion from heavily doped contact regions has been experimentally monitored with resistivity measurements of variable thickness Si:P extrinsic photoconductors (n(+) -n-n(+)). Modeling of free carrier diffusion at the interface of heavily doped contacts and highly resistive bulk at low temperatures predicts extended regions (5-30 microns) of excess carriers in high purity materials so that, in thin device structures, free carrier diffusion profiles from each contact will overlap and determine the resistivity of the device. In this work, a decrease in resistivity of four orders of magnitude was observed in a 5-micron thick structure compared to a 10-micron thick device. The resistivity of an ohmic structure in the thin limit is strongly dependent on the bulk and near-contact compensation, and resistivity measurements can be used as a sensitive measure of compensation at interfaces or in the tail of implanted layers.

Olsen, C. S.↗
DOE OSTI2026

Comparative study on the formation of Cr and Ti ohmic contacts to (001) β -Ga 2 O 3

Here, a comparative study of Cr/Au and Ti/Au ohmic contacts on (001) β-Ga 2 O 3 was conducted. The electrical behavior from current-voltage measurements and the interfacial composition and microstructure as determined from high-resolution transmission electron microscopy (TEM) with energy dispersive x-ray analysis were compared for the different contacts at selected points in an annealing series (300–700 °C, 1 min. anneals in N 2 ). Cr/Au contacts became ohmic at temperatures (300–350 °C) approximately 50–100 °C lower than Ti/Au contacts (400–450 °C). Cr/Au and Ti/Au contacts demonstrated optimal ohmic behavior (lowest resistance) when annealed to 450–500 and 500–600 °C, respectively, with Ti/Au contacts yielding a lower total resistance than Cr/Au. Cross-sectional TEM images of Cr/Au contacts annealed at 450 °C revealed the presence of Au nanoclusters at the Ga 2 O 3 interface and CrO x layers at both the top of the contact and the Ga 2 O 3 interface. Whereas TiO x also formed at the top and bottom interfaces in 450 °C-annealed Ti/Au contacts, the TiO x surface layer appeared to be variable in thickness and/or discontinuous, unlike the CrO x surface layer. Au nanoclusters were not detected at the interface in the Ti/Au contacts. The interdiffusion and oxidation observed in both contact metallizations point to the need for diffusion barriers that may allow these contacts to be used in future Ga 2 O 3 -based devices that operate at elevated temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Pinhole electrical conductivity in polycrystalline Si on locally etched SiN$_y$/SiO$_x$ passivating contacts for Si solar cells

State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ~10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Here, using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.

14 SOLAR ENERGY↗
DOE OSTI2022

Differences in Printed Contacts Lead to Susceptibility of Silicon Cells to Series Resistance Degradation

Here, in this case study, we investigate a degradation mode occurring at the cell level in fielded multi-Si modules. The modules exhibit a mix of affected and unaffected cells. Affected cells show a progressive, series-resistance-related power degradation as shown via module- and cell-level IV curves, along with electroluminescence (EL) and PL imaging at the module, cell, and cell core sample scales. Scanning electron microscopy and energy-dispersive X-ray spectroscopy reveal a difference in the oxides in the silver paste used in screen printing of the gridline contacts. The paste in the affected cells is lead rich, whereas the paste in the unaffected cells is zinc rich. This suggests that the cells were screen printed with different silver paste compositions and possibly firing conditions, and that the different composition correlates with the susceptibility to degradation. Our results indicate degradation of the contact at the oxide-silver interface, causing a severe increase in series resistance across the cell that continues to progress over time.

14 SOLAR ENERGY↗