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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

SU-E-T-21: A D-D Based Neutron Generator System for Boron Neutron Capture Therapy: A Feasibility Study

Purpose: To investigate the feasibility of a deuterium-deuterium (DD) neutron generator for application in boron neutron capture therapy (BNCT) of brain cancer Methods: MCNP simulations were performed using a head phantom and a monoenergetic neutron source, which resembles the point source in a DD generator that emits 2.45-MeV neutrons. Source energies ranging from 5eV to 2.45MeV were simulated to determine the optimal treatment energy. The phantom consisted of soft tissue, brain tissue, skull, skin layer, and a brain tumor of 5 cm in diameter. Tumor depth was varied from 5–10 cm. Boron-10 concentrations of 10 ppm, 15 ppm, and 30 ppm were used in the soft/brain tissues, skin, and tumor, respectively. The neutron flux required to deliver 60 Gy to the tumor as well as the normal tissue doses were determined. Results: Beam energies between 5eV and 10keV obtained doses with the highest dose ratios (3.3–25.9) between the tumor and the brain at various depths. The dose ratio with 2.45-MeV neutrons ranged from 0.8–6.6. To achieve the desired tumor dose in 40 minutes, the required neutron flux for a DD generator was between 8.8E10 and 5.2E11 n/s and the resulting brain dose was between 2.3 and 18 Gy, depending on the tumor depth. The skin and soft tissue doses were within acceptable tolerances. The boron-neutron interaction accounted for 54–58% of the total dose. Conclusion: This study shows that the DD neutron generator can be a feasible neutron source for BNCT. The required neutron flux for treatment is achievable with the current DD neutron technology. With a well-designed beam shaping assembly and treatment geometry, the neutron flux can be further improved and a 60-Gy prescription can be accurately delivered to the target while maintaining tolerable normal tissue doses. Further experimental studies will be developed and conducted to validate the simulation results.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2013

Ordering of carbon atoms in boron carbide structure

Boron carbide crystals have been obtained in the entire compositional range according to the phase diagram by self-propagating high-temperature synthesis (SHS). Based on the results of X-ray diffraction investigations, the samples were characterized by the unit-cell metric and reflection half-width in the entire range of carbon concentrations. A significant spread in the boron carbide unit-cell parameters for the same carbon content is found in the data in the literature; this spread contradicts the structural concepts for covalent compounds. The SHS samples have not revealed any significant spread in the unit-cell parameters. Structural analysis suggests that the spread of parameters in the literary data is related to the unique process of ordering of carbon atoms in the boron carbide structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide B{sub 15–x}C{sub x}, (1.5 ≤ x ≤ 3) and its magnesium derivative C{sub 4}B{sub 25}Mg{sub 1.42}. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from B{sub 12.9}C{sub 2.1} to B{sub 12.4}C{sub 2.6}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Study of the specific features of single-crystal boron microstructure

A complex study of the structure of β-boron single crystal grown by the floating-zone method, with sizes significantly exceeding the analogs known in the literature, has been performed. The study includes X-ray diffraction analysis and X-ray diffractometry (measurement of pole figures and rocking curves), performed on both laboratory and synchrotron sources; atomic-resolution scanning transmission electron microscopy with spherical aberration correction; and energy-dispersive microanalysis. X-ray diffraction analysis using synchrotron radiation has been used to refine the β-boron structure and find impurity Si atoms. The relative variations in the unit-cell parameters a and c for the crystal bulk are found to be δa/a ≈ 0.4 and δc/c ≈ 0.1%. X-ray diffractometry has revealed that the single-crystal growth axis coincides with the [22̄013] crystallographic axis and makes an angle of 21.12° with the [0001] threefold axis. Electron microscopy data have confirmed that the sample under study is a β-boron crystal, which may contain 0.3–0.4 at % Si as an impurity. Planar defects (stacking faults and dislocations) are found. The results of additional measurements of the temperature dependence of the thermal conductivity of the crystal in the range of 50–300 K are indicative of its high structural quality.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Equations of state and melting curve of boron carbide in the high-pressure range of shock compression

We have constructed the equations of state for crystalline boron carbide B{sub 11}C (C–B–C) and its melt under high dynamic and static pressures. A kink on the shock adiabat for boron carbide has been revealed in the pressure range near 100 GPa, and the melting curve with negative curvature in the pressure range 0–120 GPa has been calculated. The results have been used for interpreting the kinks on the shock adiabat for boron carbide in the pressure range of 0–400 GPa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si{sup +} Ion Implantation

The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si{sup +} ion implantation with subsequent annealing is studied. It is shown that the implantation of B{sup +} ions has a significant effect on the dislocation-related luminescence intensity, spectrum and the temperature dependence of the D1-band intensity. It is found that the temperature dependence is nonmonotonous and involves two regions, in which the D1-band intensity increases with increasing temperature and has two well-pronounced maxima at 20 K and 60–70 K. The maximum at 20 K is associated with the morphological features of the dislocation structure under study, whereas the maximum at 60–70 K is associated with the additional implantation of the boron impurity into the dislocation region of the samples. It is established that the intensities of the experimentally observed maxima and the position of the high-temperature maximum depend on the implanted boron concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers

It is shown, both analytically and numerically, that the hole mobility in boron δ-doped (i.e., with a thickness on the order of several lattice constants) diamond layers drops with a decrease in their two-dimensional concentration during depletion of the δ-doped layer by an external voltage. This drop is most pronounced for the maximum initial two-dimensional hole concentrations ~ 3 × 10{sup 13} cm{sup –2} (limited from above by the condition for the possibility of their significant reduction without the electrical breakdown of diamond). This is explained by a decrease in the degree of screening of scattering Coulomb potentials of ionized boron atoms and an increase in the scattering efficiency of degenerate holes from these atoms due to a drop in the kinetic energy of holes. The corresponding calculations of the transport scattering cross section of holes are performed beyond the Born approximation (i.e., perturbation theory), which is inapplicable for boron δ-doped diamond layers. The predicted effect can be used to increase the efficiency of source-to-drain current modulation by a gate voltage in diamond field-effect transistors (FETs) with δ-doped conduction channels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Evolution of Shock Waves in Hot-Pressed Ceramics of Boron Carbide and Silicon Carbide

In this paper we studied the evolution of shock compression waves in hot-pressed ceramics based on boron carbide and silicon carbide at a maximum compressive stress of 32 and 34 GPa, respectively, to determine the possible contribution of relaxation processes to the resistance to high-rate deformation. At a change in sample thickness from 0.5 to 8 mm, an appreciable decay of the elastic precursor was observed in boron carbide while an insignificant anomalous growth of the elastic precursor with a sample thickness was observed in the experiments with silicon carbide samples of various thickness. The measured value of the Hugoniot elastic limit of samples with a thickness of 8 mm was σ{sub HEL} = 17.2 ± 1.3 GPa for boron carbide and σ{sub HEL} = 15 ± 0.1 GPa for silicon carbide.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRSDate not supplied

Macro-scale Testing and Micromechanics Modeling of Fracture Behaviors for Boron Carbide Composites with Hierarchical Microstructures

With a unique combination of properties including high hardness, low density, wear and corrosion resistance, thermal stability, high neutron absorption, and semi-conductivity, boron carbide (B4C) is a candidate material for various engineering applications that involve extreme environment. The current applications of boron carbide, however, are limited by its intrinsic brittleness due to its strong covalent bonding. To toughen boron carbide, in this work hierarchical microstructure designs was used to provide multiple toughening mechanisms including crack deflection/bridging, micro-crack toughening, etc. Using field assisted sintering, B4C composites with hierarchical microstructure features including graphite platelets, micron and sub-micron sized TiB2 reinforcements were fabricated. The fracture toughness of fabricated B4C composites were previously measured at micro-scale using micro-indentation followed by post-testing microstructure inspection. However, questions including whether the fracture toughness enhancement measured at micro-scale can translate to macro-scale mechanical properties, and what are the fundamental mechanisms behind observed fracture toughness enhancement, remain to be answered. In this study, the fabricated B4C composites were tested using standardized four-point bending method to obtain fracture toughness at macro-scale. In addition, micromechanics modeling was conducted using MAC/GMC code and crack-band model to study the effect of residual stress and weak interphases on fracture behaviors of B4C composites reinforced with TiB2 particles. Through standardized four-point bending tests, fracture toughness enhancements up to 2.85, 3.32, and 3.65 MPa∙m(exp 1/2) (from 2.38 MPa∙m(exp 1/2)) were achieved for B4C composites with graphite platelets addition (micro/nano B4C), with TiB2 formation (micro B4C-TiB2), and with both graphite and TiB2 addition (micro/nano B4C-TiB2) respectively. Micromechanics modeling indicated that introduction of thermal residual stress and weak interphases caused enhanced micro-cracking behavior and resulted in the observed fracture toughness enhancement. These results furthered understanding about the mechanical behaviors at macro-scale and the mechanisms behind observed fracture toughness enhancement for B4C composites with hierarchical microstructures and can provide reference data for the future design of B4C composites with optimized microstructures for further fracture toughness enhancement.

Boron Carbide↗
DOE OSTI2012

Covalently bonded three-dimensional carbon nanotube solids via boron induced nanojunctions

The establishment of covalent junctions between carbon nanotubes (CNTs) and the modification of their straight tubular morphology are two strategies needed to successfully synthesize nanotube-based three-dimensional (3D) frameworks exhibiting superior material properties. Engineering such 3D structures in scalable synthetic processes still remains a challenge. This work pioneers the bulk synthesis of 3D macroscale nanotube elastic solids directly via a boron-doping strategy during chemical vapor deposition, which influences the formation of atomic-scale elbow junctions and nanotube covalent interconnections. Detailed elemental analysis revealed that the elbow junctions are preferred sites for excess boron atoms, indicating the role of boron and curvature in the junction formation mechanism, in agreement with our first principle theoretical calculations. Exploiting this material s ultra-light weight, super-hydrophobicity, high porosity, thermal stability, and mechanical flexibility, the strongly oleophilic sponge-like solids are demonstrated as unique reusable sorbent scaffolds able to efficiently remove oil from contaminated seawater even after repeated use.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Boron injection/dilution capabilities in TRACB/NEM coupled code

The coupled code TRAC-BF1/NEM is a thermal-hydraulic-neutronic code which allows transient simulations considering neutronic 3D and thermal-hydraulic process in multiple channels with one-dimensional geometry. TRAC-BF1 and NEM can be executed either in stand-alone mode, i.e. without coupling, as well as coupled. In stand-alone calculations NEM code is used without coupling and the thermal-hydraulic conditions (fuel temperature, moderator density and boron concentration) and xenon concentration for each node are taken from the SIMULATE3 output files. The NEM's source code has been modified to be able to read these conditions from external files when it is executed without being coupled. The coupling between TRAC-BF1 and NEM follows an integration scheme in which the thermal-hydraulic solution of TRAC-BF1 is sent to NEM to incorporate the feedback effects through the cross sections. TRAC-BF1 solves heat conduction equations inside of the heat structures using the 3D power distribution from NEM. The coupling is carried out through the communication protocol functions of PVM (Parallel Virtual Machine). The present article presents a study which constitutes an advance in the simulation of injection, transport and mix of boron in the reactor, increasing the capabilities of TRAC-BF1/NEM coupled code. This article shows the modifications introduced in the TRAC-BF1/NEM's source code to allow a more realistic simulation of boron injection transients. The qualification of these improvements in both codes is performed simulating a steady state of a generic BWR at nominal power. The results have been compared with SIMULATE3 which is used as a reference to obtain the cross sections through the SIMTAB methodology. (authors)

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2011

HINTS FOR NEUTRINO-PROCESS BORON IN PRESOLAR SILICON CARBIDE GRAINS FROM SUPERNOVAE

We have studied more than 1000 presolar silicon carbide (SiC) grains from the Murchison CM2 chondrite for C- and Si-isotopic compositions. Twelve SiC X grains, characterized by strong enrichments in {sup 28}Si and believed to originate from Type II Supernovae (SNeII), were also measured for Li- and B-isotopic compositions. None of these grains show resolvable isotope anomalies in Li or B. For the seven X grains without Li and B contributions from nearby or attached SiC grains of distinct origins we find on average {sup 7}Li/{sup 6}Li = 11.83 {+-} 0.29 (solar system: 12.06) and {sup 11}B/{sup 10}B = 4.68 {+-} 0.31 (solar system: 4.03). The average {sup 7}Li/{sup 6}Li is compatible with the solar system ratio and the lithium in the X grains is likely largely dominated by contaminating Li of laboratory or meteoritic origin. Also, most of the boron in X grains appears to be contamination but the small {sup 11}B excess of {approx}16%, significant at the 2{sigma} level, can be considered a hint for the presence of boron produced by the neutrino process in the parent SNeII. Despite this finding, a quantitative comparison of the B isotope and abundance data of X grains with model predictions reveals deficiencies in our current understanding of the details of B production in SNeII as well as on B chemistry and condensation in SNII ejecta.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2017

Nonicosahedral boron allotrope synthesized at high pressure and high temperature

Theoretical predictions of pressure-induced phase transformations often become long-standing enigmas because of limitations of contemporary available experimental possibilities. Hitherto the existence of a nonicosahedral boron allotrope has been one of them. Here we report on a nonicosahedral boron allotrope, which we denoted as ζ -B, with the orthorhombic α-Ga-type structure (space group Cmce) synthesized in a diamond-anvil cell at extreme high-pressure high-temperature conditions (115 GPa and 2100 K). The structure of ζ -B was solved using single-crystal synchrotron x-ray diffraction and its compressional behavior was studied in the range of very high pressures (115–135 GPa). Here,experimental validation of theoretical predictions reveals the degree of our up-to-date comprehension of condensed matter and promotes further development of solid-state physics and chemistry.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Improvements in Boron Plate Coating Technology for Higher Efficiency Neutron Detection and Coincidence Counting Error Reduction

This informal report presents the measurement data and information to document the performance of the advanced Precision Data Technology, Inc. (PDT) sealed cell boron-10 plate neutron detector that makes use of the advanced coating materials and procedures. In 2015, PDT changed the boron coating materials and application procedures to significantly increase the efficiency of their basic corrugated plate detector performance. A prototype sealed cell unit was supplied to LANL for testing and comparison with prior detector cells. Also, LANL had reference detector slabs from the original neutron collar (UNCL) and the new Antech UNCL with the removable 3He tubes. The comparison data is presented in this report.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Armor for Steel: Facile Synthesis of Hexagonal Boron Nitride Films on Various Substrates

Abstract While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition process is reported here for the conformal growth of hBN on large surfaces of various alloys and steels, regardless of their complex shapes. In contrast to the previously reported very limited protection by hBN against corrosion and oxidation, protection of steels against 10% HCl and oxidation resistance at 850 °C in air is demonstrated. Furthermore, an order of magnitude reduction in the friction coefficient of the hBN coated steels is shown. The growth mechanism is revealed in experiments on thin metal films, where the tunable growth of single‐crystal hBN with a selected number of layers is demonstrated. The key distinction of the process is the use of N 2 gas, which gets activated exclusively on the catalyst's surface and eliminates adverse gas‐phase reactions. This rate‐limiting step allowed independent control of activated nitrogen along with boron coming from a solid source (like elemental boron). Using abundant and benign precursors, this approach can be readily adopted for large‐scale hBN synthesis in applications where cost, production volume, and process safety are essential.

2D materials↗
DOE OSTI2024

Formation of a Boron-Oxide Termination for the (100) Diamond Surface

A boron-oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide B 2 O 3 onto the hydrogen-terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to 950 °C. The resulting termination is highly oriented and chemically homogeneous, although further optimization is required to increase the surface coverage beyond the 0.4 monolayer coverage achieved here. This work demonstrates the possibility of using molecular deposition under ultrahigh vacuum conditions for complex surface engineering of the diamond surface, and may be a first step in an alternative approach to fabricating boron doped delta layers in diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Radical Chemistry and Reaction Mechanisms of Propane Oxidative Dehydrogenation over Hexagonal Boron Nitride Catalysts

Abstract Although hexagonal boron nitride (h‐BN) has recently been identified as a highly efficient catalyst for the oxidative dehydrogenation of propane (ODHP) reaction, the reaction mechanisms, especially regarding radical chemistry of this system, remain elusive. Now, the first direct experimental evidence of gas‐phase methyl radicals (CH 3 . ) in the ODHP reaction over boron‐based catalysts is achieved by using online synchrotron vacuum ultraviolet photoionization mass spectroscopy (SVUV‐PIMS), which uncovers the existence of gas‐phase radical pathways. Combined with density functional theory (DFT) calculations, the results demonstrate that propene is mainly generated on the catalyst surface from the C−H activation of propane, while C 2 and C 1 products can be formed via both surface‐mediated and gas‐phase pathways. These observations provide new insights towards understanding the ODHP reaction mechanisms over boron‐based catalysts.

Zhang, Xuanyu↗
DOE OSTI2020

A Lanthanum‐Filled Carbon–Boron Clathrate

Abstract We report a carbon‐boron clathrate with composition 2 La@B 6 C 6 (LaB 3 C 3 ). Like recently reported SrB 3 C 3 , [1] single‐crystal X‐ray diffraction and computational modelling indicate that the isostructural La member crystallizes in the cubic bipartite sodalite structure (Type‐VII clathrate) with La atoms encapsulated within truncated octahedral cages composed of alternating carbon and boron atoms. The covalent nature of the B−C bonding results in a hard, incompressible framework, and owing to the balanced electron count, La 3+ [B 3 C 3 ] 3− exhibits markedly improved pressure stability and is a semiconductor with an indirect band gap predicted near 1.3 eV. A variety of different guest atoms may potentially be substituted within Type‐VII clathrate cages, presenting opportunities for a large family of boron‐stabilized, carbon‐based clathrates with ranging physical properties.

Strobel, Timothy A.↗