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Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.
Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.
The dynamic mechanical relaxation behavior of two series of amorphous polyolefins, was investigated from 4.2 K to the glass transition. Most of the polymers show a damping maximum or plateau in the 40 to 50 K region. Various mechanisms which have been suggested for cryogenic relaxations in amorphous polymers are considered as they might relate to the polyolefins. Two secondary relaxation processes above 80 K are distinguished. A relaxation at about 160 K (beta) in the second and third member of each series is associated with restricted blackbone motion. This process requires a certain degree of chain flexibility since it is not observed in the first member of each series. A lower temperature process (gamma) is observed in each member of the second series and is attributed to motion of the ethyl side group.
The catalytic oxidation of amorphous carbon substrates by Pd particles is observed by in situ transmission electron microscopy. Various modes of selective attack of the carbon substrate in the immediate neighborhood of Pd particles are observed, which can be correlated with different degrees of particle mobility. Using amorphous substrates we have been able to demonstrate that the particle-substrate interaction is influenced by the structure of the particle. This has not previously been noted.
Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.
Tantalum films evaporated in high vacuum onto liquid-nitrogen-cooled substrates had an amorphous structure that persisted even after warming to room temperature. The optical conductivity (as well as the dc conductivity) of the amorphous films differed significantly from that of the bcc films.
Molecular dynamics was used to study the structure, dispersion and short-time behavior of ten-atom clusters adsorbed onto amorphous and crystalline substrates, in which the cluster atoms differed from the substrate atoms. Two adatom-substrate model systems were chosen; one, in which the interaction energy between adatom pairs was greater than that between substrate pairs, and the other, in which the reverse was true. At relatively low temperature ranges, increased dispersion of cluster atoms occurred: (a) on the amorphous substrate as compared to the FCC(100) surface, (b) with increasing reduced temperature, and (c) with adatom-substrate interaction energy stronger than adatom-adatom interaction. Two-dimensional clusters (rafts) on the FCC(100) surface displayed migration of edge atoms only, indicating a mechanism for the cluster rotation and shape changes found in experimental studies.
Hydrogen diffusion behavior and electronic properties of crystalline TiCuHo94, Ti2CuH1.90, and Ti2CuH2.63 and amorphous a-TiCuH1.4 were studied using proton relaxation times, proton Knight shifts, and magnetic susceptibilities. Crystal structure and hydrogen site occupancy have major roles in hydrogen mobility. The density of electron states at E sub F is reduced in amorphous a-TiCuH1.4 compared to the crystalline hydrides.
A rule is formulated which establishes a sufficient condition that an amorphous binary alloy will be formed by ion mixing of multilayered samples when the two constituent metals are of different crystalline structure, regardless of their atomic sizes and electronegativities. The rule is supported by the experimental results obtained on six selected binary metal systems, as well as by the previous data reported in the literature. The amorphization mechanism is discussed in terms of the competition between two different structures resulting in frustration of the crystallization process.
The proton Knight shifts and spin-lattice relaxation times have been measured in crystalline and amorphous Ze2PdH(x). Core polarization from the Zr d-band dominates the proton hyperfine interactions. The density of Fermi level d-electron states is reduced in the amorphous phase relative to the electron density in crystalline Zr2PdH(x).
The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.
A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.
Because, unlike most metallic glasses, melt-spun alloys of the series (Au/100-y/Cu/y/)77Si9Ge14 exhibit well separated glass transition and kinetic crystallization temperatures, crystallization can be studied in the fully relaxed amorphous phase. An isothermal calorimetric analysis of the devitrification kinetics of the amorphous alloy indicates sporadic nucleation and a constant growth rate. It is found for the cases of alloys with y values lower than 25 that the classical theory of homogeneous nucleation is consistent with observations, including transient effects. An analysis of the crystallization kinetics shows that slow crystal growth rates play an important role in glass formation in these alloys. Although the reduced glass transition temperature increases with Cu content, glass formation is more difficult at high Cu contents, perhaps because of a difference in nucleus composition.
The work on reliability testing of solar cells is discussed. Results are given on initial temperature and humidity tests of amorphous silicon devices. Calibration and measurement procedures for amorphous and crystalline cells are given. Temperature stress levels are diagrammed.
Amorphous metals are produced by forming a molten unit of metal and deploying the unit into a bidirectional acoustical levitating field or by dropping the unit through a spheroidizing zone, a slow quenching zone, and a fast quenching zone in which the sphere is rapidly cooled by a bidirectional jet stream created in the standing acoustic wave field produced between a half cylindrical acoustic driver and a focal reflector or a curved driver and a reflector. The cooling rate can be further augmented first by a cryogenic liquid collar and secondly by a cryogenic liquid jacket surrounding a drop tower. The molten unit is quenched to an amorphous solid which can survive impact in a unit collector or is retrieved by a vacuum chuck.
Results of the initial studies of the hydrous alteration of amorphous Mg-SiO smokes indicate that, although these materials readily adsorb water, the silicate structure is much more stable at 360 K than expected. Drastic changes in the relative absorption strengths of the 10- and 20-micron 'silicate' features that appear quite rapidly at 750 K were observed; these observations might have important implications for the interpretation of cometary dust spectra. Observations of the development of 3.4-3.5 micron features possibly due to hydrocarbons in the spectra of processed Mg-SiO smokes have raised the exciting possibility that these amorphous condensates could act as Fischer-Tropsch type catalysts to produce hydrocarbons in the primitive solar nebula.
Incorporation of N into Ni/W films reduces reactivity with Si substrate. Paper describes reactions between Si substrates and deposited amorphous Ni/W or Ni/N/W films. Thermal stability of amorphous Ni/W films as diffusion barriers in Si markedly improved by introduction of N into Ni/W films during deposition.
In experiments described in report, amorphous hydrogenated carbon films grown at room temperature by low-frequency plasma deposition, using methane or butane gas. Films have unique array of useful properties; (a) adhere to wide variety of materials; (b) contain only carbon and hydrogen; (c) smooth and free of pinholes; (d) resistant to attack by moisture and chemicals; and (e) have high electric-breakdown strength and electrical resistivity. Two of optical properties and hardness of this film controlled by deposition conditions. Amorphous a-C:H and BN films used for hermetic sealing and protection of optical, electronic, magnetic, or delicate mechanical systems, and for semiconductor field dielectrics.