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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

A fully integrated oven controlled microelectromechanical oscillator -- Part I. Design and fabrication

Our paper reports the design and fabrication of a fully integrated oven controlled microelectromechanical oscillator (OCMO). This paper begins by describing the limits on oscillator frequency stability imposed by the thermal drift and electronic properties (Q, resistance) of both the resonant tank circuit and feedback electronics required to form an electronic oscillator. An OCMO is presented that takes advantage of high thermal isolation and monolithic integration of both micromechanical resonators and electronic circuitry to thermally stabilize or ovenize all the components that comprise an oscillator. This was achieved by developing a processing technique where both silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) circuitry and piezoelectric aluminum nitride, AlN, micromechanical resonators are placed on a suspended platform within a standard CMOS integrated circuit. Operation at microscale sizes achieves high thermal resistances (~10 °C/mW), and hence thermal stabilization of the oscillators at very low-power levels when compared with the state-of-the-art ovenized crystal oscillators, OCXO. This constant resistance feedback circuit is presented that incorporates on platform resistive heaters and temperature sensors to both measure and stabilize the platform temperature. Moreover, the limits on temperature stability of the OCMO platform and oscillator frequency imposed by the gain of the constant resistance feedback loop, placement of the heater and temperature sensing resistors, as well as platform radiative and convective heat losses are investigated.

42 ENGINEERING↗
DOE OSTI2019

Design and Characterization of a MEMS Probe Scanner for On-chip Atomic Force Microscopy

This paper presents the design and characterization of a microelectromechanical systems (MEMS)-based probe scanner proposed to function as an on-chip atomic force microscope (AFM). The device comprises an in-plane stage with electrostatic actuators and electrothermal displacement sensors. The stage is able to precisely position an AFM probe over a sample to perform tapping-mode AFM imaging. For implementation, a standard silicon-on-insulator (SOI) microfabrication process is used. In a previously reported design, the embedded AFM probe featured only one piezoelectric transducer for simultaneous actuation and sensing, making its use in imaging problematic. To address this issue, the new design features separate actuation and sensing AlN piezoelectric transducers. An extra electrode is also incorporated on the probe that enables canceling the electrical feedthrough from the actuation to sensing. To accommodate the extra signal routing paths, mechanical design of the probe scanner is modified. Device characterization reveals an in-plane displacement range of 8 µm×7 µm with a bandwidth of up to 2.7 kHz. The frequencydomain behavior of the AFM probe is also studied and feedthrough cancellation is performed at the resonant frequency of 127.35 kHz.

42 ENGINEERING↗
DOE OSTI2012

Quality Characterization of Silicon Bricks using Photoluminescence Imaging and Photoconductive Decay: Preprint

Imaging techniques can be applied to multicrystalline silicon solar cells throughout the production process, which includes as early as when the bricks are cut from the cast ingot. Photoluminescence (PL) imaging of the band-to-band radiative recombination is used to characterize silicon quality and defects regions within the brick. PL images of the brick surfaces are compared to minority-carrierlifetimes measured by resonant-coupled photoconductive decay (RCPCD). Photoluminescence images on silicon bricks can be correlated to lifetime measured by photoconductive decay and could be used for high-resolution characterization of material before wafers are cut. The RCPCD technique has shown the longest lifetimes of any of the lifetime measurement techniques we have applied to the bricks.RCPCD benefits from the low-frequency and long-excitation wavelengths used. In addition, RCPCD is a transient technique that directly monitors the decay rate of photoconductivity and does not rely on models or calculations for lifetime. The measured lifetimes over brick surfaces have shown strong correlations to the PL image intensities; therefore, this correlation could then be used totransform the PL image into a high-resolution lifetime map.

14 SOLAR ENERGY↗
DOE OSTI2015

GPU/MIC Acceleration of the LHC High Level Trigger to Extend the Physics Reach at the LHC

The quest for rare new physics phenomena leads the PI to propose evaluation of coprocessors based on Graphics Processing Units (GPUs) and the Intel Many Integrated Core (MIC) architecture for integration into the trigger system at LHC. This will require development of a new massively parallel implementation of the well known Combinatorial Track Finder which uses the Kalman Filter to accelerate processing of data from the silicon pixel and microstrip detectors and reconstruct the trajectory of all charged particles down to momentums of 100 MeV. It is expected to run at least one order of magnitude faster than an equivalent algorithm on a quad core CPU for extreme pileup scenarios of 100 interactions per bunch crossing. The new tracking algorithms will be developed and optimized separately on the GPU and Intel MIC and then evaluated against each other for performance and power efficiency. The results will be used to project the cost of the proposed hardware architectures for the HLT server farm, taking into account the long term projections of the main vendors in the market (AMD, Intel, and NVIDIA) over the next 10 years. Extensive experience and familiarity of the PI with the LHC tracker and trigger requirements led to the development of a complementary tracking algorithm that is described in [arxiv: 1305.4855], [arxiv: 1309.6275] and preliminary results accepted to JINST.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

Coupled Thermo-Mechanical and Photo-Chemical Degradation Mechanisms that determine the Reliability and Operational Lifetimes for CPV Technologies

This project sought to identify and characterize the coupled intrinsic photo-chemo-mechanical degradation mechanisms that determine the reliability and operational lifetimes for CPV technologies. Over a three year period, we have completed a highly successful program which has developed quantitative metrologies and detailed physics-based degradation models, providing new insight into the fundamental reliability physics necessary for improving materials, creating accelerated testing protocols, and producing more accurate lifetime predictions. The tasks for the program were separated into two focus areas shown in the figure below. Focus Area 1, led by Reinhold Dauskardt and Warren Cai with a primary collaboration with David Miller of NREL, studied the degradation mechanisms present in encapsulant materials. Focus Area 2, led by Reinhold Dauskardt and Ryan Brock with a primary collaboration with James Ermer and Peter Hebert of Spectrolab, studied stress development and degradation within internal CPV device interfaces. Each focus area was productive, leading to several publications, including findings on the degradation of silicone encapsulant under terrestrial UV, a model for photodegradation of silicone encapsulant adhesion, quantification and process tuning of antireflective layers on CPV, and discovery of a thermal cycling degradation mechanism present in metal gridline structures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Analyzing the Energy Performance, Wind Loading, and Costs of Photovoltaic Slat Modules on Commercial Rooftops

NREL studied a new type of photovoltaic (PV) module configuration wherein multiple narrow, tilted slats are mounted in a single frame. Each slat of the PV slat module contains a single row of cells and is made using ordinary crystalline silicon PV module materials and processes, including a glass front sheet and weatherproof polymer encapsulation. Compared to a conventional ballasted system, a system using slat modules offer higher energy production and lower weight at lower LCOE. The key benefits of slat modules are reduced wind loading, improved capacity factor and reduced installation cost. First, the individual slats allow air to flow through, which reduce wind loading. Using PV performance modeling software, we compared the performance of an optimized installation of slats modules to a typical installation of conventional modules in a ballasted rack mounting system. Based on the results of the performance modeling two different row tilt and spacing were tested in a wind tunnel. Scaled models of the PV Slat modules were wind tunnel tested to quantify the wind loading of a slat module system on a commercial rooftop, comparing the results to conventional ballasted rack mounted PV modules. Some commercial roofs do not have sufficient reserve dead load capacity to accommodate a ballasted system. A reduced ballast system design could make PV system installation on these roofs feasible for the first time without accepting the disadvantages of penetrating mounts. Finally, technoeconomic analysis was conducted to enable an economic comparison between a conventional commercial rooftop system and a reduced-ballast slat module installation.

14 SOLAR ENERGY↗
DOE OSTI2016

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al0.6Ga0.4Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

Zamiri, M. (ORCID:000000020042735X)↗
DOE OSTI2012

Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by scanning tunneling microscopy, reflected high-energy electron diffraction, and high resolution transmission electron microscopy

Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470-650 Degree-Sign C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber have been investigated. To decrease the cleaning temperature, a silicon surface was hydrogenated in the process of a preliminary chemical treatment in HF and NH{sub 4}F aqueous solutions. It has been shown that smooth surfaces composed of wide terraces separated by monoatomic steps can be obtained by dehydrogenation at the temperatures Greater-Than-Or-Equivalent-To 600 Degree-Sign C, whereas clean surfaces obtained at the temperatures <600 Degree-Sign C are rough. It has been found that there exists a dependence of structural properties of clean surfaces on the temperature of hydrogen thermal desorption and the process of the preliminary chemical treatment. The frequency of detachment/attachment of Si dimers from/to the steps and effect of the Ehrlich-Schwoebel barrier on ad-dimer migration across steps have been found to be the most probable factors determining a degree of the resultant surface roughness.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Scalable Preparation of Ternary Hierarchical Silicon Oxide-Nickel-Graphite Composites for Lithium-Ion Batteries

Silicon monoxide is a promising anode candidate because of its high theoretical capacity and good cycle performance. To solve the problems associated with this material, including large volume changes during charge-discharge processes, we report a ternary hierarchical silicon oxide–nickel–graphite composite prepared by a facile two-step ball-milling method. The composite consists of nano-Si dispersed silicon oxides embedded in nano-Ni/graphite matrices (Si@SiOx/Ni/graphite). In the composite, crystalline nano-Si particles are generated by the mechanochemical reduction of SiO by ball milling with Ni. These nano-Si dispersed oxides have abundant electrochemical activity and can provide high Li-ion storage capacity. Furthermore, the milled nano-Ni/graphite matrices stick well to active materials and interconnect to form a crosslinked framework, which functions as an electrical highway and a mechanical backbone so that all silicon oxide particles become electrochemically active. Owing to these advanced structural and electrochemical characteristics, the composite enhances the utilization efficiency of SiO, accommodates its large volume expansion upon cycling, and has good ionic and electronic conductivity. The composite electrodes thus exhibit substantial improvements in electrochemical performance. This ternary hierarchical Si@SiOx/Ni/graphite composite is a promising candidate anode material for high-energy lithium-ion batteries. Additionally, the mechanochemical ball-milling method is low cost and easy to reproduce, indicating potential for the commercial production of the composite materials.

25 ENERGY STORAGE↗
DOE OSTI2011

Hadron-therapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

Hadron-therapy has gained increasing interest for cancer treatment especially within the last decade. System commissioning and quality assurance procedures impose to monitor the particle beam using 2D dose measurements. Nowadays, several monitoring systems exist for hadron-therapy but all show a relatively high influence on the beam properties: indeed, most devices consist of several layers of materials that degrade the beam through scattering and energy losses. For precise treatment purposes, ultra-thin silicon strip detectors are investigated in order to reduce this beam scattering. We assess the beam size increase provoked by the Multiple Coulomb Scattering when passing through Si, to derive a target thickness. Monte-Carlo based simulations show a characteristic scattering opening angle lower than 1 mrad for thicknesses below 20 {mu}m. We then evaluated the fabrication process feasibility. We successfully thinned down silicon wafers to thicknesses lower than 10 {mu}m over areas of several cm{sup 2}. Strip detectors are presently being processed and they will tentatively be thinned down to 20 {mu}m. Moreover, two-dimensional TCAD simulations were carried out to investigate the beam detector performances on p-type Si substrates. Additionally, thick and thin substrates have been compared thanks to electrical simulations. Reducing the pitch between the strips increases breakdown voltage, whereas leakage current is quite insensitive to strips geometrical configuration. The samples are to be characterized as soon as possible in one of the IBA hadron-therapy facilities. For hadron-therapy, this would represent a considerable step forward in terms of treatment precision. (authors)

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

Phenomenological model of photoluminescence degradation and photoinduced defect formation in silicon nanocrystal ensembles under singlet oxygen generation

We propose a phenomenological model to explain photoluminescence degradation of silicon nanocrystals under singlet oxygen generation in gaseous and liquid systems. The model considers coupled rate equations, which take into account the exciton radiative recombination in silicon nanocrystals, photosensitization of singlet oxygen generation, defect formation on the surface of silicon nanocrystals as well as quenching processes for both excitons and singlet oxygen molecules. The model describes well the experimentally observed power law dependences of the photoluminescence intensity, singlet oxygen concentration, and lifetime versus photoexcitation time. The defect concentration in silicon nanocrystals increases by power law with a fractional exponent, which depends on the singlet oxygen concentration and ambient conditions. The obtained results are discussed in a view of optimization of the photosensitized singlet oxygen generation for biomedical applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Porosity-dependent fractal nature of the porous silicon surface

Porous silicon films with porosity ranging from 42% to 77% were fabricated by electrochemical anodization under different current density. We used atomic force microscopy and dynamic scaling theory for deriving the surface roughness profile and processing the topography of the porous silicon layers, respectively. We first compared the topography of bare silicon surface with porous silicon and then studied the effect of the porosity of porous silicon films on their scaling behavior by using their self-affinity nature. Our work demonstrated that silicon compared to the porous silicon films has the highest Hurst parameter, indicating that the formation of porous layer due to the anodization etching of silicon surface leads to an increase of its roughness. Fractal analysis revealed that the evolution of the nanocrystallites’ fractal dimension along with porosity. Also, we found that both interface width and Hurst parameter are affected by the increase of porosity.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Femtosecond-laser hyperdoping silicon in an SF{sub 6} atmosphere: Dopant incorporation mechanism

In this paper, we examine the fundamental processes that occur during femtosecond-laser hyperdoping of silicon with a gas-phase dopant precursor. We probe the dopant concentration profile as a function of the number of laser pulses and pressure of the dopant precursor (sulfur hexafluoride). In contrast to previous studies, we show the hyperdoped layer is single crystalline. From the dose dependence on pressure, we conclude that surface adsorbed molecules are the dominant source of the dopant atoms. Using numerical simulation, we estimate the change in flux with increasing number of laser pulses to fit the concentration profiles. We hypothesize that the native oxide plays an important role in setting the surface boundary condition. As a result of the removal of the native oxide by successive laser pulses, dopant incorporation is more efficient during the later stage of laser irradiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Method for synthesis of high quality graphene

A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Solid‐State Prealkylation of Electrode Architectures (SPEAR): Direct Control of Prelithiation Levels in Silicon Anodes and Electrochemical Cycling

The Solid-state Prealkylation of Electrode ARchitectures (SPEAR) is different than traditional electrochemical prealkylation processes. Through SPEAR, alkylation is driven by solid-state diffusion without the simultaneous SEI formation concomitant with polarization. Here, we investigate the prelithiation of 80 wt. % Si-based anodes to varying amounts (up to Li 1.38 Si) to understand the trade-off between improved Li capacity and expansion-induced stress. Through dilatometry, we found that solid-state lithiation led to filling of the electrode pores through silicon expansion. This swelling changed the SEI formation process and accessibility of the silicon compared to an electrochemically lithiated electrode. Indeed, optimal prelithiation to Li 0.82 Si increases the initial C/3 cycling capacity post-SEI formation up to 43%, consistent with deeper Si activation through the electrode bulk. Prelithiation and cycling cells prelithiated beyond Li 0.82 Si results in a state of charge (SOC) close to 100% which facilitates parasitic degradation mechanisms and volume expansion of the Si electrode. The results demonstrate a pathway to modify silicon activation/SEI formation to enable high-energy electrodes.

Musgrove, Amanda L. [Oak Ridge National Laboratory↗