Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “silicon processing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Reaction of BCl 3 with H- and Cl-terminated Si(100) as a pathway for selective, monolayer doping through wet chemistry

The reaction of boron trichloride with the H and Cl-terminated Si(100) surfaces was investigated to understand the interaction of this molecule with the surface for designing wet-chemistry based silicon surface doping processes using a carbon- and oxygen-free precursor. The process was followed with X-ray photoelectron spectroscopy (XPS). Within the reaction conditions investigated, the reaction is highly effective on Cl-Si(100) for temperatures below 70°C, at which point both surfaces react with BCl$_3$. The XPS investigation followed the formation of a B 1s peak at 193.5 eV corresponding to (B-O)$_x$ species. Even the briefest exposure to ambient conditions lead to hydroxylation of surface borochloride species. However, the Si 2p signature at 102 eV allowed for a confirmation of the formation of a direct Si-B bond. Density functional theory was utilized to supplement the analysis and identify possible major surface species resulting from these reactions. This work provides a new pathway to obtain a functionalized silicon surface with a direct Si-B bond that can potentially be exploited as a means of selective, ultra-shallow, and supersaturated doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1979

A continuous silicon-coating facility

Automatic continuous silicon-coating facility is used to process 100 by 10 cm graphite-coated ceramic substrates for silicon solar cells. Process reduces contamination associated with conventional dip-coating processes, improving material service life.

Butter, C.↗
NASA NTRS1998

The Role of Marangoni Convection for the FZ-Growth of Silicon

Fluctuations of the electrical resistivity due to inhomogeneous dopant distribution are still a serious problem for the industrial processing yield of doped silicon crystals. In the case of silicon floating-zone growth, the main sources of these inhomogeneities are time- dependent flows in the liquid phase during the growth process. Excluding radio frequency (RF) induced convection, buoyancy and thermocapillary (Marangoni) convection are the two natural reasons for fluid flow. Both originate from temperature/concentration gradients in the melt, buoyancy convection through thermal/concentrational volume expansion, and thermocapillary convection through the temperature/concentration dependence of the surface tension. To improve the properties of grown crystals, knowledge of the strength, the characteristic, and the relation of these two flow mechanisms is essential. By the use of microgravity, the effect and the strength of buoyancy (gravity dependent) and thermocapillary (gravity independent) convection can be separated and clarified. Applying magnetic fields, both convective modes can be influenced: fluid flow can either be damped (static magnetic fields) or overlaid by a regular flow regime (rotating magnetic fields). Two complementary approaches have been pursued: Silicon full zones (experiments on the German sounding rockets TEXUS 7, 12, 22, 29, and 36) with the maximum temperature at half of the zone height and silicon half zones (experiments on the Japanese sounding rockets TR-IA4 and 6) with the maximum temperature at the top of the melt. With the full zone arrangement, the intensity and the frequency of the dopant striations could be determined and the critical Marangoni number could be identified. The half zone configuration is suited to classify the flow pattern and to measure the amplitude and the frequency of temperature fluctuations in the melt by inserting thermocouples or temperature sensors into the melt. All experiments have been carried out in monoellipsoid mirror furnaces. Typical zone geometries are approx. 8 to 14 mm in diameter and height. The crystals grown under microgravity are compared to crystals grown in static axial magnetic fields (B<5 tesla) and in transversal rotating magnetic fields (B<7.5 mT / f=50 Hz). Experimental results are completed by 3D numerical simulations: the obtained temperature and concentration distribution in the melt confirm the damping effect of rotating magnetic fields and explain the change in the radial segregation under static magnetic fields.

Dold, P.↗
DOE OSTI2020

Finite Element Analysis and Techno-economic Modeling of Solar Silicon Molten Salt Electrolysis

A new process is presented for low-cost one-step production of pure solid silicon from natural quartzite by molten salt electrolysis. At a process temperature of 1100°C, a techno-economic model including detailed mass and energy balances estimates energy consumption below 15 kWh/kg, with operating cost of $\$1.74$/kg and capital cost around $\$10,500$ per t/a (tonne annually) of production capacity for a 160,000 t/a plant. Use of an inert solid oxide membrane anode results in a pure oxygen by-product and no direct emissions. As a result, finite element analysis estimates the current density distribution and total current to inform the design of slab-shaped solid silicon cathodes.

14 SOLAR ENERGY↗
NASA NTRS1981

Improved performance from solar cells made from candidate sheet silicon materials

Performance of solar cells made from various candidate silicon sheets is updated and the results are presented. Solar cells were fabricated using a baseline process and other process variations, and tested under AM1 conditions. Performance of the baseline solar cells indicates that remarkable improvements in material quality have been achieved for most of the sheets, showing efficiencies close to that of the control cells made from conventional CZ silicon. Process variations (or additions), in general, have resulted in significant improvements in all performance with a degree of change dependent on the process chosen and to a certain extent the sheet quality.

Yoo, H. I.↗
DOE OSTI2024

Assessment of Readout Techniques for Passive Monitors

This fiscal year (FY) 2023 report on passive temperature sensors covers two main objectives: to demonstrate that the optical dilatometer can successfully process disc shaped silicon carbide (SiC) temperature monitors (TMs), and to demonstrate proof of concept for using the capacitance readout method to read printed melt wires. The SiC objective was successfully met by annealing and analyzing, via optical dilatometry, all eight 3-mm SiC discs provided by the Nuclear Science User Facilities (NSUF) Idaho State University (ISU) Nanostructured Steels for Enhanced Radiation Tolerance (N SERT) experiment, which was irradiated at Idaho National Laboratory (INL)’s Advanced Test Reactor (ATR). Per the ISU N SERT experiment, capsule 1 (KGT 3828 1 and KGT 3828-2) had a design temperature of 300°C +/- 50°C and an exposure of 2 dpa +/- 10%; capsule 2 (KGT 4600 and KGT 4609) had a design temperature of 300°C +/- 50°C and an exposure of 6 dpa +/- 10%; capsule 3 (KGT 4639 C and KGT 4639-D) had a design temperature of 500°C +/- 50°C and an exposure of 6 dpa +/- 10%; and capsule 4 (KGT 3841 3 and KGT 3841 4) had a design temperature of 500°C +/- 50°C and an exposure of 2 dpa +/- 10%. The target exposure rates, in dpa, are the neutron damage for various types of nanostructured steels. All but three SiC TMs (KGT 4600, KGT 4639 D, and KGT 3841 4) revealed averaged peak irradiation temperatures that fell within the design temperature ranges. The three SiC TMs that did not fall within the design temperatures ranges were at least 100°C below that target temperature. Furthermore, SiC TM KGT 3841 C revealed two irradiation regimes: one closer to the 300°C design temperature, and the other closer to the 500°C design temperature. Also, all the SiC TMs’ averaged peak irradiation temperatures came in anywhere between 20°C and 240°C below the irradiation temperatures predicted by the thermal models. This showed the optical dilatometry method to be a reliable and less time intensive process for determining averaged peak irradiation temperatures from passive SiC TMs such as rods and discs. Under the Advanced Sensors and Instrumentation (ASI) program in FY-23, Boise State University (BSU) proposed to demonstrate proof of concept for using a capacitance readout technique applicable to printed melt wires; however, they were stymied by the complexity of the capacitance readout method. In support of the BSU work, INL developed an additively manufactured (AM) ceramic package for encapsulating the new melt wires. Inks were synthesized at BSU that used new protocols rather than following previously established protocols implemented at INL, and testing of various temperatures was conducted at BSU to evaluate the melting behaviors of the printed melt wires. The result was that the capacitance readout technique showed promise but also created more challenges than originally anticipated. For example, the tin ink synthesized at BSU showed unusual melting behaviors that did nothing to enhance the performance of the final printed melt wire prototype in terms of the capacitance readout method. To make the proof of concept work when applied to the printed melt wires, the ASI program would need to invest further resources and time. Consequently, the program is not planning to continue this proof of concept work in FY-24, based on the progress and findings achieved in FY-23.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Solar cell and I.C. aspects of ingot-to-slice mechanical processing

Intensive efforts have been put into the growth of silicon crystals to suit today's solar cell and integrated circuit requirements. Each step of processing the crystal must also receive concentrated attention to preserve the grown-in perfection and to provide a suitable device-ready wafer at reasonable cost. A comparison is made between solar cell and I.C. requirements on the mechanical processing of silicon from ingot to wafer. Specific defects are described that can ruin the slice or can possibly lead to device degradation. These include grinding cracks, saw exit chips, crow's-foot fractures, edge cracks, and handling scratches.

Dyer, L. D.↗
DOE OSTI2020

Tailorable Micelle Morphology in Self-Assembling Block Copolymer Gels for Templating Nanoporous Ceramics

The self-assembly of block copolymers offers opportunities for the facile organization and templating of inorganic nanomaterials. Here, we describe a morphology map for a poly(methyl methacrylate)-b-poly(n-butyl acrylate)-b-poly(methyl methacrylate) (PMMA-b-PnBA-b-PMMA) block copolymer/polycarbosilane system that allows for tunable control over nanoscale micelle geometry via manipulation of the preceramic polymer content. We produced gels with spherical, wormlike, and bicontinuous morphologies, which were processed to create silicon carbide-based ceramic structures with tunable nanoscale porosities. The role of the constituent polymers in influencing the structure and rheology of this system is discussed. The PMMA-b-PnBA-b-PMMA block copolymer/preceramic polymer system offers a number of advantages including: (i) commercial availability, (ii) rapid self-assembly kinetics, and (iii) successful conversion of the self-assembled nanostructure to ceramic via pyrolysis. Finally, this system may be useful for catalytic, structural, or thermal applications in both industrial and academic settings because of its ease of use and relatively inexpensive reagents.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Silicon carbide fiber composite receiver tubes manufactured by PIP process

The performance of SiC fiber composites made by a polymer infiltration and pyrolysis (PIP) process was investigated. Two types of tubular composites were manufactured using Hi-Nicalon and Nicalon-CG silicon carbide fibers infiltrated with SMP10 silicon carbide matrix. The fiber content in both composites was about 25 vol.% with an average density of 2.39 g/cc. The tubular SiC composites showed stable solar absorptance and emittance of 0.97 and 0.91, respectively, at 800 °C. The composites were thermally shocked at 900, 1000, and 1100 °C with a waterjet simulating raindrops. As a result, the hoop tensile strength of the composites revealed no loss of mechanical strength due to the thermal shock experiments up to 1100 °C.

14 SOLAR ENERGY↗
DOE OSTI2022

TRISO SiC Failure Probability for Reactivity Initiated Accidents in High-Temperature Gas-Cooled Reactors

This work analyzes the failure process of the silicon carbide (SiC) layer in tristructural isotropic (TRISO) during reactivity-initiated accident scenarios for a high-temperature gas-cooled reactor (HTGR) with BISON. Two cases are considered—a group control rod withdrawal (CRW) and a control rod ejection (CRE)—reproduced from a previous study. Failure probability is modeled using Weibull statistics, and worst-case scenario Weibull parameters are adopted to simulate the envelopes in BISON with a one-dimensional TRISO model. CRW scenario results are characterized by higher values of maximum energy deposition and final temperature and volumetric strain with respect to the CRE ones, but the latter have remarkably higher SiC failure probability, mainly due to the offset in strain rates between the two cases. This work also confirms the validity and conservatism of the performance envelopes produced in a previous work by replicating the envelope formulation using RELAP5-3D and RAVEN with a different sampling technique and obtaining consistent results. A sensitivity analysis using the Sobol variance decomposition method on SiC failure probability is then performed involving a set of inputs on both CRW and CRE. The two most important parameters are Weibull modulus and characteristic stress, and their relative importance depends on the specific case. The proposed interpretation of the results is that both energy deposition and strain rate influence the relative degree of importance of the failure parameters. Computation of 95% confidence intervals around worst-case scenario SiC failure probability values is also carried out for four different sets of Weibull parameters. Heren a new criterion for SiC TRISO quality classification built upon safety-based ranges of Weibull parameters is proposed to be integrated in future Fuel-Production Quality Assurance Plans.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

ASIC Scoping Study Final Report

This report documents the results and findings of a one-year scoping study investigating multichannel readout application specific integrated circuits (ASICs) for interfacing to, and processing data from, silicon photomultiplier (SiPM) arrays. We document ASIC desired and required specifications for four applications supporting national security mission areas: neutron radiography, associated particle imaging, and two versions of kinematic neutron imaging cameras. While each application has a few unique requirements that stress capability, there is generally good agreement among most. Two recently developed ASIC devices were evaluated in a system-like configuration by interfacing these to scintillator crystals exposed to gamma and neutron sources. The 64-channel ORNL device delivered functional capability while meeting most mission requirements for neutron radiography. The Nalu Scientific device, a 32-channel full waveform digitizer, did not demonstrate reliable neutron / gamma separation but it is unclear if this was an ASIC issue or problems with test setup or firmware. A literature survey of other commercial and academic ASICs was undertaken to with the conclusion that existing devices do not meet all requirements.

42 ENGINEERING↗
NASA NTRS1979

Remote manipulator for IC wafers

Mechanical manipulator automatically loads, transports, and unloads silicon wafers between processing stations in large-scale integrated-circuit fabrication facility at Marshall Space Flight Center thus eliminating need for human opeators at various stages in processing cycle. It also reduces possibility of wafer contamination.

Hudgins, J. L.↗
NASA NTRS1982

System for slicing wafers

A newly patented process for slicing silicon wafers that has distinct advantages over methods now widely used is described. The primary advantage of the new system is that it allows the efficient slicing of a number of ingots simultaneously at high speed. The cutting action is performed mechanically, most often with diamond particles that are transported to the cutting zone by a fluid vehicle or have been made an integral part of the blade by plating or impregnation. The new system uses a multiple or ganged band saw, arranged and spaced so that each side, or length, segment of a blade element, or loop, provides a cutting function. Each blade is maintained precisely in position by guides as it enters and leaves each ingot. The cutting action is performed with a conventional abrasive slurry composed of diamond grit suspended in an oil- or water-based vehicle. The distribution system draws the slurry from the supply reservoir and pumps it to the injection tubes to supply it to each side of each ingot. A flush system is provided at the outer end of the work-station zone. In order to reduce potential damage, a pneumatically driven flushing fluid is provided.

Source record↗
NASA NTRS1982

Analysis of defect structure in silicon. Silicon sheet growth development for the large area silicon sheet task of the Low-Cost Solar array Project

One hundred ninety-three silicon sheet samples, approximately 880 square centimeters, were analyzed for twin boundary density, dislocation pit density, and grain boundary length. One hundred fifteen of these samples were manufactured by a heat exchanger method, thirty-eight by edge defined film fed growth, twenty-three by the silicon on ceramics process, and ten by the dendritic web process. Seven solar cells were also step-etched to determine the internal defect distribution on these samples. Procedures were developed or the quantitative characterization of structural defects such as dislocation pits, precipitates, twin & grain boundaries using a QTM 720 quantitative image analyzing system interfaced with a PDP 11/03 mini computer. Characterization of the grain boundary length per unit area for polycrystalline samples was done by using the intercept method on an Olympus HBM Microscope.

Natesh, R.↗
NASA NTRS1982

Low Angle Silicon Sheet Growth. Large Area Silicon Sheet Task Low Cost Solar Array Project

The results of a program to demonstrate the feasibility of a low angle silicon ribbon growth process are described. Twenty-six experimental runs were performed. Ribbons were grown at pull rates from 5 to 68 cm/min. Ribbon lengths up to 74 cm were grown while widths varied from 5 to 25 mm. Thicknesses varied from 0.6 to 2.5 mm, with typical values of about 1 mm.

Source record↗
NASA NTRS1981

Silane pyrolysis in a free-space reactor

The Union Carbide process for producing silicon for photovoltaic applications proceeds via high purity silane as an intermediate. Decomposition of silane is accomplished in a freespace reactor which utilizes recirculating product hydrogen and silicon to transfer energy from a heated wall to an entering silane jet. Reaction occurs away from the wall, minimizing problems with wall deposition and contamination. A series of long duration and throughput tests has proven the feasibility of this concept. High purity powder can be produced at flows up to 4.5 kg/hr (10 lb/hr) in a 0.2 m (8 inch) diameter reactor with better than 99.99% conversion efficiency. This work is funded by DOE under JPL's Low Cost Solar Array (LSA) program.

Lay, J. R.↗