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At least 505 records · Page 28

Reconstruction and uncertainty quantification of lattice Hamiltonian model parameters from observations of microscopic degrees of freedom

The emergence of scanning probe and electron beam imaging techniques has allowed quantitative studies of atomic structure and minute details of electronic and vibrational structure on the level of individual atomic units. These microscopic descriptors, in turn, can be associated with local symmetry breaking phenomena, representing the stochastic manifestation of the underpinning generative physical model. In this work, we explore the reconstruction of exchange integrals in the Hamiltonian for a lattice model with two competing interactions from observations of microscopic degrees of freedom and establish the uncertainties and reliability of such analysis in a broad parameter-temperature space. In contrast to other approaches, we specifically specify a loss function inherent to thermodynamic systems and utilize it to estimate uncertainty in simulated realizations of different models. As an ancillary task, we develop a machine learning approach based on histogram clustering to predict phase diagrams efficiently using a reduced descriptor space. We further demonstrate that reconstruction is possible well above the phase transition and in the regions of parameter space when the macroscopic ground state of the system is poorly defined due to frustrated interactions. This suggests that this approach can be applied to the traditionally complex problems of condensed matter physics such as ferroelectric relaxors and morphotropic phase boundary systems, spin and cluster glasses, and quantum systems once the local descriptors linked to the relevant physical behaviors are known.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

PULSAR: A High-Repetition-Rate, High-Power, CE Phase-Locked Laser for the J.R. Macdonald Laboratory at Kansas State University

This instrumentation grant funded the development and installation of a state-of-the-art laser system to be used for the DOE funded research at the J.R. Macdonald Laboratory at Kansas State University. Specifically, we purchased a laser based on the KMLABs Red-Dragon design, which has a high repetition rate of 10-20 kHz crucial for multi-parameter coincidence measurements conducted in our lab. This laser system is carrier-envelope phase (CEP) locked and provides pulses as short as 21 fs directly from the amplifier (see details below). In addition, we have developed a pulse compression setup that provides sub 5 fs pulses and a CEP tagging capability that allows for long measurements of CEP dependent processes.

47 OTHER INSTRUMENTATION↗

Ir/IrSi3/Si Schottky-Barrier Infrared Detector

Quantum efficiency increased. Proposed Schottky-barrier infrared detector has double metallic layer of Ir and IrSi3 instead of single metallic layer of Ir, IrSi, or IrSi3. Offers advantages of both relatively high infrared absorption in thin film of Ir and stability and reproducibility of layer of IrSi3 in contact with Si. Also serves as barrier to chemical reactions between Ir overlayer and Si substrate. Detectors used to form focal-plane array integrated with charge-coupled-device-addressing and image-processing circuitry.

Lin, True-Lon↗

Numerical simulations of early-stage dynamics of electron bunches emitted from plasmonic photocathodes

High-brightness electron sources are a key ingredient to the development of compact accelerator-based light sources. The electron sources are commonly based on (linear) photoemission process where a laser pulse with proper wavelength impinges on the surface of a metallic or semiconductor photocathode. Very recently, the use of plasmonic cathodes - cathodes with a nano-patterned surface - have demonstrated great enhancement in quantum efficiencies (Li et al., 2013 [1]). Alternatively, this type of photocathodes could support the formation of structured beams composed of transversely-separated beamlets. In this paper we discuss numerical simulations of the early-stage beam dynamics of the emission process from plasmonic cathodes carried out using the Warp (Friedman et al., 2014 [2]) framework. Furthermore, the model is used to investigate the properties of beams emitted from these photocathode and subsequently combined with particle-in-cell simulations to explore the imaging of cathode pattern after acceleration in a radiofrequency gun.

43 PARTICLE ACCELERATORS↗

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗

TH-CD-207B-06: Swank Factor of Segmented Scintillators in Multi-Slice CT Detectors: Pulse Height Spectra and Light Escape

Purpose: Pulse height spectra (PHS) have been used to determine the Swank factor of a scintillator by measuring fluctuations in its light output per x-ray interaction. The Swank factor and x-ray quantum efficiency of a scintillator define the upper limit to its imaging performance, i.e. DQE(0). The Swank factor below the K-edge is dominated by optical properties, i.e. variations in light escape efficiency from different depths of interaction, denoted e(z). These variations can be optimized to improve tradeoffs in x-ray absorption, light yield, and spatial resolution. This work develops a quantitative model for interpreting measured PHS, and estimating e(z) on an absolute scale. The method is used to investigate segmented ceramic GOS scintillators used in multi-slice CT detectors. Methods: PHS of a ceramic GOS plate (1 mm thickness) and segmented GOS array (1.4 mm thick) were measured at 46 keV. Signal and noise propagation through x-ray conversion gain, light escape, detection by a photomultiplier tube and dynode amplification were modeled using a cascade of stochastic gain stages. PHS were calculated with these expressions and compared to measurements. Light escape parameters were varied until modeled PHS agreed with measurements. The resulting estimates of e(z) were used to calculate PHS without measurement noise to determine the inherent Swank factor. Results: The variation in e(z) was 67.2–89.7% in the plate and 40.2–70.8% in the segmented sample, corresponding to conversion gains of 28.6–38.1 keV{sup −1} and 17.1–30.1 keV{sup −1}, respectively. The inherent Swank factors of the plate and segmented sample were 0.99 and 0.95, respectively. Conclusion: The high light escape efficiency in the ceramic GOS samples yields high Swank factors and DQE(0) in CT applications. The PHS model allows the intrinsic optical properties of scintillators to be deduced from PHS measurements, thus it provides new insights for evaluating the imaging performance of segmented ceramic GOS scintillators.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Low-dose high-resolution $\mathrm{TOF}$-$\mathrm{PET}$ using ionization-activated multi-state low-$\mathrm{Z}$ detector media

We propose PET scanners using low atomic number media that undergo a persistent local change of state along the paths of the Compton recoil electrons. Measurement of the individual scattering locations and angles, deposited energies, and recoil electron directions allows using the kinematical constraints of the 2-body Compton scattering process to perform a statistical time-ordering of the scatterings, with a high probability of precisely identifying where the gamma first interacted in the detector. In these cases the Line-of-Response is measured with high resolution, determined by the underlying physics processes and not the detector segmentation. There are multiple such media that act through different mechanisms. As an example in which the change of state is quantum-mechanical through a change in molecular configuration, rather than thermodynamic, as in a bubble chamber, we present simulations of a two-state photoswitchable organic dye, a ‘Switchillator’, that is activated to a fluorescent-capable state by the ionization of the recoil electrons. The activated state is persistent, and can be optically excited multiple times to image individual activated molecules. Energy resolution is provided by counting the activated molecules. Location along the LOR is implemented by large-area time-of-flight MCP-PMT photodetectors with single photon time resolution in the tens of ps and sub-mm spatial resolution. Simulations indicate a large reduction of dose.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.

36 MATERIALS SCIENCE↗

Building a Road from Light to Energy

Representing the Center for Solar and Thermal Energy Conversion (CSTEC), this document is one of the entries in the Ten Hundred and One Word Challenge. As part of the challenge, the 46 Energy Frontier Research Centers were invited to represent their science in images, cartoons, photos, words and original paintings, but any descriptions or words could only use the 1000 most commonly used words in the English language, with the addition of one word important to each of the EFRCs and the mission of DOE energy. The mission of the Center for Solar and Thermal Energy Conversion (CSTEC) is to design and to synthesize new materials for high efficiency photovoltaic (PV) and thermoelectric (TE) devices, predicated on new fundamental insights into equilibrium and non-equilibrium processes, including quantum phenomena, that occur in materials over various spatial and temporal scales.

14 SOLAR ENERGY↗

Cu-Catalyzed Synthesis of CdZnSe–CdZnS Alloy Quantum Dots with Highly Tunable Emission

Fabrication of quantum dots (QDs) with emission covering a wide spectral region has been persistently intriguing because of their potentials in a range of practical applications such as biological labeling and imaging, solar cells, light-emitting diodes, and next-generation displays. We report the synthesis of CdZnSe–CdZnS core–shell alloy QDs through a Cu-catalyzed solid solution alloying strategy starting from CdSe–CdS core–shell QDs. The resulting CdZnSe–CdZnS alloy QDs exhibit emission profiles covering a wide wavelength range of 470–650 nm while maintaining high photoluminescence quantum yields. In addition, high morphological uniformity of the starting CdSe–CdS QDs can be largely retained in the final alloy QDs. We attribute this alloying process to the high mobility nature of Cu cations in Cd-chalcogenide crystals at elevated reaction temperatures, which allows Cu cations to act as transporting agents to transfer a Zn component into the CdSe–CdS QDs while maintaining the particle integrity. We show that this unique alloying strategy is independent of the shape of the starting QDs and can also be applied to the synthesis of CdZnSe–CdZnS nanorods. We anticipate that our study will instigate the synthesis of various high-quality alloy QDs and other alloy nanocrystals beyond what can be achieved currently.

36 MATERIALS SCIENCE↗

Computational imaging using a mode-mixing cavity at microwave frequencies

We present a 3D computational imaging system based on a mode-mixing cavity at microwave frequencies. The core component of this system is an electrically large rectangular cavity with one corner re-shaped to catalyze mode mixing, often called a Sinai Billiard. The front side of the cavity is perforated with a grid of periodic apertures that sample the cavity modes and project them into the imaging scene. The radiated fields are scattered by the scene and are measured by low gain probe antennas. The complex radiation patterns generated by the cavity thus encode the scene information onto a set of frequency modes. Assuming the first Born approximation for scattering dynamics, the received signal is processed using computational methods to reconstruct a 3D image of the scene with resolution determined by the diffraction limit. The proposed mode-mixing cavity is simple to fabricate, exhibits low losses, and can generate highly diverse measurement modes. The imaging system demonstrated in this letter can find application in security screening and medical diagnostic imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Scintillator high-gain avalanche rushing photoconductor active-matrix flat panel imager: Zero-spatial frequency x-ray imaging properties of the solid-state SHARP sensor structure

Purpose: The authors are investigating the feasibility of a new type of solid-state x-ray imaging sensor with programmable avalanche gain: scintillator high-gain avalanche rushing photoconductor active matrix flat panel imager (SHARP-AMFPI). The purpose of the present work is to investigate the inherent x-ray detection properties of SHARP and demonstrate its wide dynamic range through programmable gain. Methods: A distributed resistive layer (DRL) was developed to maintain stable avalanche gain operation in a solid-state HARP. The signal and noise properties of the HARP-DRL for optical photon detection were investigated as a function of avalanche gain both theoretically and experimentally, and the results were compared with HARP tube (with electron beam readout) used in previous investigations of zero spatial frequency performance of SHARP. For this new investigation, a solid-state SHARP x-ray image sensor was formed by direct optical coupling of the HARP-DRL with a structured cesium iodide (CsI) scintillator. The x-ray sensitivity of this sensor was measured as a function of avalanche gain and the results were compared with the sensitivity of HARP-DRL measured optically. The dynamic range of HARP-DRL with variable avalanche gain was investigated for the entire exposure range encountered in radiography/fluoroscopy (R/F) applications. Results: The signal from HARP-DRL as a function of electric field showed stable avalanche gain, and the noise associated with the avalanche process agrees well with theory and previous measurements from a HARP tube. This result indicates that when coupled with CsI for x-ray detection, the additional noise associated with avalanche gain in HARP-DRL is negligible. The x-ray sensitivity measurements using the SHARP sensor produced identical avalanche gain dependence on electric field as the optical measurements with HARP-DRL. Adjusting the avalanche multiplication gain in HARP-DRL enabled a very wide dynamic range which encompassed all clinically relevant medical x-ray exposures. Conclusions: This work demonstrates that the HARP-DRL sensor enables the practical implementation of a SHARP solid-state x-ray sensor capable of quantum noise limited operation throughout the entire range of clinically relevant x-ray exposures. This is an important step toward the realization of a SHARP-AMFPI x-ray flat-panel imager.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Quantum efficiencies of imaging detectors with alkali halide photocathodes. I - Microchannel plates with separate and integral CsI photocathodes

Measurements and comparisons have been made of the quantum efficiencies of microchannel plate (MCP) detectors in the far-UV (below 2000-A) wavelength range using CsI photocathodes (a) deposited on the front surfaces of microchannel plates and (b) deposited on solid substrates as opaque photocathodes with the resulting photoelectrons input to microchannel plates. The efficiences were measured in both pulse-counting and photodiode modes of operation. Typical efficiencies are about 15 percent at 1216 A for a CsI-coated MCP compared with 65 percent for an opaque CsI photocathode MCP detector. Special processing has yielded an efficiency as high as 20 percent for a CsI-coated MCP. This may possibly be further improved by optimization of the tilt angle of the MCP channels relative to the front face of the MCP and incident radiation. However, at present there still remains a factor of at least 3 quantum efficiency advantage in the separate opaque CsI photocathode configuration.

Carruthers, George R.↗

Inversion of coherent surface scattering images via deep learning network

Coherent surface scattering imaging is a powerful tool for imaging a surface/interface of a thin nanostructure deposited on an opaque substrate. A mathematical conversion of an object image from a scattering pattern is essential for coherent surface scattering imaging to visualize structures of specimens. It has been achieved by using phase retrieval algorithms requiring oversampling in scattering patterns and employing alternating projection approaches. It is a computationally challenging and time-consuming process. In this paper, we demonstrate CSSI-NN, which is a deep learning neural network model to predict images of objects from scattering intensities in coherent surface scattering imaging. This model allowing for the instant outcome from scattering patterns would be tremendously beneficial not only for effective experiments but also for data analysis of phase retrieval.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Frontier nonequilibrium materials science enabled by ultrafast electron methods

Most innovation in materials science and engineering resides in our ability to understand and control the intimate relationship between the structure of materials and their properties. Conventionally, the only route to discovering innovative new material properties has been to explore the structural and compositional phase space that is accessible at (or near) thermodynamic equilibrium. The characterization, manipulation and, ultimately, control of material properties far from equilibrium offers almost completely untapped possibilities for uncovering novel states and phases of materials. Investigations of materials far from equilibrium require the development of new techniques, which are capable of following dynamic processes in materials with extreme spatiotemporal resolution. Thus, ultrafast electron-based methods have become a major new frontier in materials science due to the capability of following dynamics on time scales as short as femtoseconds with the high spatial resolution and sensitivity afforded by electrons. The articles in this issue provide an exciting cross section of the novel research directions that have been enabled at this frontier. Imaging on ultrafast time scales carries critical information on phase transitions, fundamental processes involved in light-harvesting, magnetic, and plasmonic dynamics, the coupling of electronic and nuclear degrees of freedom in materials and has revealed previously hidden, nonequilibrium metastable states of matter that have no equilibrium analog.

36 MATERIALS SCIENCE↗

Large-area SnO{sub 2}: F thin films by offline APCVD

Highlights: {yields} Large-area (1245 mm x 635 mm) FTO thin films were successfully deposited by offline APCVD process. {yields} The as-prepared FTO thin films with sheet resistance 8-11 {Omega}/{open_square} and direct transmittance more than 83% exhibited better than that of the online ones. {yields} The maximum quantum efficiency of the solar cells based on offline FTO substrate was 0.750 at wavelength 540 nm. {yields} The power of the solar modules using the offline FTO as glass substrates was 51.639 W, higher than that of the modules based on the online ones. -- Abstract: In this paper, we reported the successful preparation of fluorine-doped tin oxide (FTO) thin films on large-area glass substrates (1245 mm x 635 mm x 3 mm) by self-designed offline atmospheric pressure chemical vapor deposition (APCVD) process. The FTO thin films were achieved through a combinatorial chemistry approach using tin tetrachloride, water and oxygen as precursors and Freon (F-152, C2H4F2) as dopant. The deposited films were characterized for crystallinity, morphology (roughness) and sheet resistance to aid optimization of materials suitable for solar cells. We got the FTO thin films with sheet resistance 8-11 {Omega}/{open_square} and direct transmittance more than 83%. X-ray diffraction (XRD) characterization suggested that the as-prepared FTO films were composed of multicrystal, with the average crystal size 200-300 nm and good crystallinity. Further more, the field emission scanning electron microscope (FESEM) images showed that the films were produced with good surface morphology (haze). Selected samples were used for manufacturing tandem amorphous silicon (a-Si:H) thin film solar cells and modules by plasma enhanced chemical vapor deposition (PECVD). Compared with commercially available FTO thin films coated by online chemical vapor deposition, our FTO coatings show excellent performance resulting in a high quantum efficiency yield for a-Si:H solar cells and ideal open voltage and short circuit current for a-Si:H solar modules.

36 MATERIALS SCIENCE↗

Wide Dynamic Range, 10 kHz Framing Detector for 4D-STEM

Hybrid pixel array detectors (PADs) have expanded the fidelity, frame rate and dynamic range for diffractive imaging in electron microscopes. With their high detective quantum efficiencies (DQE), the noise performance limited is by counting statistics. Consequently, improving the precision and quality of high-speed images requires increasing the linear dynamic range and the maximum usable beam current. Here we describe a new prototype hybrid PAD, our next-generation electron microscope pixel array detector (NG-EMPAD) that expands both the framing speed and dynamic range of our earlier EMPAD design. Like the EMPAD, electrons are detected directly in a 500 μm thick silicon sensor bonded pixel-by-pixel to a custom signal processing integrated circuit (IC). Each pixel in the IC integrates charge carriers produced by the high-energy incident electrons. Here, in-pixel circuitry uses a combination of techniques to extend the dynamic range, including adaptive gain switching and the quantitative excess charge dumping similar to the EMPAD. In-pixel buffering of signals during readout allows acquiring a new image while reading out the previously collected image, yielding an image collection duty cycle of nearly 100%.

36 MATERIALS SCIENCE↗

Microscopic model for all optical switching in ferromagnets

The microscopic mechanism behind the all optical switching (AOS) in ferromagnets has triggered intense scientific debate. Here, the microscopic three-temperature model is utilized to describe AOS in a perpendicularly magnetized ferromagnetic Co/Pt system. We demonstrate that AOS in such a ferromagnet can be explained with the Inverse Faraday Effect (IFE). The influence of the strength and lifetime of the IFE induced field pulse on the switching process are investigated. We found that because of strong spin-orbit coupling, the minimal lifetime of the IFE needed to obtain switching is of the order of 0.1 ps, which is shorter than previously assumed. Moreover, spatial images of the domain pattern after AOS in Co/Pt, as well as their dependence on applying an opposite magnetic field, are qualitatively reproduced.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗