Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “polycrystalline”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Effect of mechanical surface and heat treatments on erosion resistance

The effects of mechanical surface treatments as well as heat treatments on the erosion resistance of 6061 aluminum alloy and 1045 steel were studied. Mechanical surface treatments were found to have little or no effect on the erosion resistance. This is due to the formation by particle impact of a work hardened surface layer regardless of the initial surface condition. The erosion resistance of Al single crystals is found to be independent of orientation. This is due to destruction of the surface microstructure and formation of a polycrystalline surface layer by the impact of erodant particles as observed by X-ray diffraction. While upon solution treatment of annealed 6061 aluminum the increase in hardness is accompanied by an increase in erosion resistance, precipitation treatment which causes a further increase in hardness results in slightly lower erosion resistance. Using two types of erodant particles, glass beads and crushed glass, the erosion rate is found to be strongly dependent on erodant particle shape, being an order of magnitude higher for erosion with crushed glass as compared to glass beads. While for erosion with glass beads heat treatment of 1045 steel had a profound effect on its erosion resistance, little or no such effect was observed for erosion with crushed glass.

Salik, J.↗
NASA NTRS1980

The 1980 summer research fellowship program

The problem of incorporating visual input into robot systems is described. The photochemistry of the stratosphere, particularly possible permutations of the ozone layer, is discussed. Photoelectrochemical properties of metal thio-hypodiphosphates are investigated. Extreme eigenvalues are computed by the Lancqos approach. The rotational Raman spectra of the molecular atmosphere is studied. A computer operated mathematical symbolic manipulation system is described. Preparation of polycrystalline semiconductor electrodes of tungsten and molybdenum dichalcogenides is received.

Darden, G. C.↗
NASA NTRS1980

Changes in surface chemistry of silicon carbide (0001) surface with temperature and their effect on friction

Friction studies were conducted with a silicon carbide (0001) surface contacting polycrystalline iron. The surface of silicon carbide was pretreated: (1) by bombarding it with argon ions for 30 minutes at a pressure of 1.3 pascals; (2) by heating it at 800 C for 3 hours in vacuum at a pressure of 10 to the minus eighth power pascal; or (3) by heating it at 1500 C for 3 hours in a vacuum of 10 to the minus eighth power pascal. Auger emission spectroscopy was used to determine the presence of silicon and carbon and the form of the carbon. The surfaces of silicon carbide bombarded with argon ions or preheated to 800 C revealed the main Si peak and a carbide type of C peak in the Auger spectra. The surfaces preheated to 1500 C revealed only a graphite type of C peak in the Auger spectra, and the Si peak had diminished to a barely perceptible amount. The surfaces of silicon carbide preheated to 800 C gave a 1.5 to 3 times higher coefficient of friction than did the surfaces of silicon carbide preheated to 1500 C. The coefficient of friction was lower in the 11(-2)0 direction than in the 10(-1)0 direction; that is, it was lower in the preferred crystallographic slip direction.

Miyoshi, K.↗
NASA NTRS1980

Silicon Research and Technology Workshop report

The materials, structures, processing, modeling and measurements of high efficiency silicon solar cells were surveyed. In the materials area, highlights included: (1) the possibility of improving cell voltages by reducing minority carrier mobilities in critical regions of the solar cells; (2) the need for and possibility of lowering the surface recombination velocity for improvement of open circuit voltage in shallow junction cells; (3) the present need for improved lifetime in high resistivity cells; and (4) the potential for new materials such as polycrystalline or dendritic web material to perform well at end of life in a radiation environment. In the area of structures, distinction was made between those for terrestrial use and those that would survive radiation environments. Areas such as epitaxial growth and laser or elctron beam annealing (and diffusion) were proposed as having certain advantages over more conventional techniques.

Meulenberg, A., Jr.↗
NASA NTRS1981

Surface chemistry and friction behavior of the silicon carbide (0001) surface at temperatures to 1500 deg C

X-ray photoelectron and Auger electron spectroscopy analyses and friction studies were conducted with a silicon carbide (0001) surface in contact with iron at various temperatures to 1200 or 1500 C in a vacuum of 10 to the minus 8th power Pa. The results indicate that there is a significant temperature influence on both the surface chemistry and friction properties of silicon carbide. The principal contaminant of adsorbed amorphous carbon on the silicon carbide surface in the as received state is removed by simply heating to 400 C. Above 400 C, graphite and carbide type carbine are the primary species on the silicon carbide surface, in addition to silicon. The coefficients of friction of polycrystalline iron sliding against a single crystal silicon carbide (0001) surface were high at temperatures to 800 C. Similar coefficients of friction were obtained at room temperature after the silicon carbide was preheated at various temperatures up 800 C. When the friction experiments were conducted above 800 C or when the specimens were preheated to above 800 C, the coefficients of friction were dramatically lower. At 800 C the silicon and carbide type carbon are at a maximum intensity in the XPS spectra. With increasing temperature above 800 C, the concentration of the graphite increases rapidly on the surface, whereas those of the carbide type carbon and silicon decrease rapidly.

Miyoshi, K.↗
NASA NTRS1981

Silicon-on-ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

The technical feasibility of producing solar cell quality sheet silicon to meet the DOE 1986 cost goal of 70 cents/watt was investigated. The silicon on ceramic approach is to coat a low cost ceramic substrate with large grain polycrystalline silicon by unidirectional solidification of molten silicon. Results and accomplishments are summarized.

Whitehead, A. B.↗
NASA NTRS1981

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600 C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after growth, preferentially segregates to grain and becomes electrically deactivated. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty year device lifetime.

Hopkins, R. H.↗
NASA NTRS1981

Development of a polysilicon process based on chemical vapor deposition, phase 1

The development of a dichlorosilane-based reductive chemical vapor deposition process for the production of polycrystalline silicon is discussed. Experimental data indicate that the ease of ignition and explosion severity of dichlorosilane (DCS)/air mixtures is substantially attenuated if the DCS is diluted with hydrogen. Redesign of the process development unit to accommodate safety related information is described. Several different sources of trichlorosilane were used to generate a mixture of redistributed chlorosilanes via Dowex ion exchange resin. The unseparated mixtures were then fed to an experimental reactor in which silicon was deposited and the deposited silicon analyzed for electrically active impurities. At least one trichlorosilane source provided material of requisite purity. Silicon grown in the experimental reactor was converted to single crystal material and solar cells fabricated and tested.

Mccormick, J.↗
NASA NTRS1981

Design, analysis, and test verification of advanced encapsulation system

Procurement of 4 in x 4 in polycrystalline solar cells were proceeded with some delays. A total of 1200 cells were procured for use in both the verification testing and qualification testing. Additional thermal structural analyses were run and the data are presented. An outline of the verification testing is included with information on test specimen construction.

Garcia, A.↗
NASA NTRS1981

Fundamental aspects in the quantitative ultrasonic determination of fracture toughness: General equations

The problem of establishing a theoretical groundwork for experimentally-found correlations between ultrasonic and fracture toughness factors in polycrystalline metals is discussed. It is noted that the link between these material properties and ultrasonic factors are the microstructural parameters that interact with stress wave propagation during deformation and fracture. The dynamic response of material inhomogeneities and the strains and displacements they undergo under incident stress waves are considered. Dynamic strains and displacements inside and outside scatterers are treated. The underlying approach, the formulation and governing equations for the eigenstrains, and the determination of the energy due to the presence of inhomogeneities are presented. The stress wave interaction problem is presented in terms of the dynamic eigenstrain concept.

Fu, L. S.↗
NASA NTRS1980

Development of processes for the production of low cost silicon dendritic web for solar cells

High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

Duncan, C. S.↗
NASA NTRS1980

Grain size dependence of silicon solar cell parameters

Measurements of the non-uniform diffusion length of the minority carriers near grain boundaries in polycrystalline silicon have been used to develop an analytical model for the calculation of solar cell output as a function of grain size. Experimental results are presented which verify the theoretical analysis. Variation of open circuit voltage and fill factor with grain size is discussed.

Koliwad, K. M.↗
NASA NTRS1981

The effect of mechanical surface and heat treatments on the erosion resistance of 6061 aluminum alloy

The effects of both mechanical surface treatments and heat treatments on the erosion resistance of 6061 aluminum alloy were studied in order to gain a better understanding of material properties which affect erosion behavior. It was found that mechanical surface treatments have little or no effect on the erosion resistance. This is due to the formation by particle impact of a work-hardened surface layer, independent of the initial surface condition. The erosion resistance of aluminum single crystals was found to be independent of orientation, which is due to destruction of the surface microstructure and formation of a polycrystalline surface layer by the particle impact as observed by X-ray diffraction. Although on solution treatment of annealed aluminum 6061 the increase in hardness is accompanied by an increase in erosion resistance, precipitation treatment (which causes a further increase in hardness) results in a slightly lower erosion resistance.

Salik, J.↗
NASA NTRS1982

Closed-Loop Process Yields Ultrapure Silicon

Metallurgical-grade silicon transforms into tribromosilane by reacting it with process byproducts. Tribromosilane is separated from mixture, purified, and finally decomposed in presence of hydrogen in silicon-product reactor. Conversion efficiencies of 30 to greater than 60 percent of tribromosilane to ultrapure granular polycrystalline silicon are typical in produce reactor.

Schumacher, J. C.↗
NASA NTRS1981

Silicon solar cell process development, fabrication and analysis

Solar cells were fabricated from EFG ribbons dendritic webs, cast ingots by heat exchanger method, and cast ingots by ubiquitous crystallization process. Baseline and other process variations were applied to fabricate solar cells. EFG ribbons grown in a carbon-containing gas atmosphere showed significant improvement in silicon quality. Baseline solar cells from dendritic webs of various runs indicated that the quality of the webs under investigation was not as good as the conventional CZ silicon, showing an average minority carrier diffusion length of about 60 um versus 120 um of CZ wafers. Detail evaluation of large cast ingots by HEM showed ingot reproducibility problems from run to run and uniformity problems of sheet quality within an ingot. Initial evaluation of the wafers prepared from the cast polycrystalline ingots by UCP suggested that the quality of the wafers from this process is considerably lower than the conventional CZ wafers. Overall performance was relatively uniform, except for a few cells which showed shunting problems caused by inclusions.

Yoo, H. I.↗
NASA NTRS1981

Silicon-on ceramic process: Silicon sheet growth and device development for the large-area silicon sheet task of the low-cost solar array project

The technical feasibility of producing solar-cell-quality sheet silicon to meet the Department of Energy (DOE) 1986 overall price goal of $0.70/watt was investigated. With the silicon-on-ceramic (SOC) approach, a low-cost ceramic substrate is coated with large-grain polycrystalline silicon by unidirectional solidification of molten silicon. This effort was divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating designated SCIM-coating, and acronym for Silicon Coating by an Inverted Meniscus (SCIM); (3) material characterization; (4) cell fabrication and evaluation; and (5) theoretical analysis. Both coating approaches were successful in producing thin layers of large grain, solar-cell-quality silicon. The dip-coating approach was initially investigated and considerable effort was given to this technique. The SCIM technique was adopted because of its scale-up potential and its capability to produce more conventiently large areas of SOC.

Grung, B. L.↗
NASA NTRS1981

Development of a polysilicon process based on chemical vapor deposition (phase 1)

A dichlorosilane-based reductive chemical vapor deposition (CVD) process demonstrated is capable of producing, at low cost, high quality polycrystalline silicon. Testing of decomposition reactor heat shields to insure that the shield provides adequate personnel protection assuming a worst case explosion was completed. Minor modifications to a production reactor heat shield provided adequate heat shield integrity. Construction of the redesigned PDU (Process Development Unit) to accommodate all safety related information proceeded on schedule. Structural steel work was completed as is the piping and instrumentation design work. Major pieces of process equipment were received and positioned in the support structure and all transfer piping and conduits to the PDU were installed. Construction was completed on a feed system for supplying DCS to an intermediate sized reactor. The feed system was successfully interfaced with a reactor equipped with a modified heat shield. Reactor checkout was completed.

Mccormick, J.↗
NASA NTRS1982

Control of interface reactions in SIC/TI composites

The reaction between a 0.5 to 1.0 Al film and a thick Ti substrate to form TiAl3 occurs very rapidly on heating to 635 C and causes the Al to be confined to the surface region. After heating to 900 C Ti3Al is formed with little release of Al into alpha Ti. Further annealing at 900 C eventually causes the Ti3Al phase to decompose and a substantial amount of Al is released into alpha Ti. The interdiffusion coefficient for Al in alpha Ti at 900 C increases by less than one order of magnitude as Al is varied from 0 to 20 at %. These data were obtained from the (101) X-ray diffraction intensity band using polycrystalline samples. Improvements in the analysis of X-ray diffraction data for the determination of composition profiles are discussed.

Houska, C. R.↗