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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

HT-solution growth and characterisation of In{sub x}Na{sub x}Mn{sub 1-2x}WO{sub 4} (0<x≤0.26)

A new solid solution system, In{sub x}Na{sub x}Mn{sub 1–2x}WO{sub 4} (0<x=≤0.26) belonging to the MnWO{sub 4}-type multiferroics was investigated. Large single crystals were grown up to several mm in length from high-temperature oxide solutions using a solvent mixture of Na{sub 2}WO{sub 4} and Na{sub 2}W{sub 2}O{sub 7}. Quantitative doping degrees were analyzed by means of electron microprobe. Single crystal X-ray diffraction studies agreed with the polar space group P2 for In{sub x}Na{sub x}Mn{sub 1–2x}WO{sub 4}. The complexity of partial (Na{sup +}/Mn{sup 2+})- and (In{sup 3+}/Mn{sup 2+})-ordering makes their atomic sites unique, explaining the dissymmetrization from P2/c down to P2. This is also valid for the InNaW{sub 2}O{sub 8}-type Mn{sub 2y}In{sub 1-y}Na{sub 1-y}W{sub 2}O{sub 8} solid solution found as co-product in this study. Specific heat and magnetisation measurements showed a paramagnetic dilution effect from (In{sup 3+}/Na{sup +})-doping while lowering the transition temperature for the multiferroic phase AF2 of In{sub x}Na{sub x}Mn{sub 1–2x}WO{sub 4} with respect to the prototype MnWO{sub 4}. - Graphical abstract: A volume expansion around Mn2 site by (In, Na)-doping is drawn by the atomic shifts in a Mn2O{sub 6} octahedron in the atomistic structure of In{sub 0.20(2)}Na{sub 0.17(2)}Mn{sub 0.63(4)}WO{sub 4} from the respective atomic positions of In-free MnWO{sub 4}. The size and direction of arrows are scaled up for indicating the consequent local distortion. - Highlights: • HT solution crystal growth of (In, Na):MnWO{sub 4}-solid-solution compounds. • Polar space group symmetry P2 for their atomistic structures. • Magnetic properties of the multiferroic phase AF2 by (In{sup 3+}, Na{sup +})-doping. • Magnetic phase transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2017

BaFe 4 O 7 and K 0.22 Ba 0.89 Fe 4 O 7 : Canted Antiferromagnetic Diferrites with Exceptionally High Magnetic Ordering Temperatures [BaFe 4 O 7 and K 0.22 Ba 0.89 Fe 4 O 7 – New Canted Antiferromagnetic Diferrites with Exceptionally High Magnetic Ordering Temperatures]

Here, complex iron containing oxides, typically referred to as ferrites, have been extensively studied for their electronic and magnetic properties, including magnetotransport, ferromagnetism, ferroelectricity, and a combination of the latter two, known as multiferroism. The search for materials possessing simultaneous ferromagnetic and ferroelectric behavior is of significant interest both for the advancement of fundamental science and for applications in random access memory (RAM). Despite the great technological potential of multiferroics, one or both of the ferroic ordering temperatures tend to fall below room temperature, such as in the compositions TbMnO 3 and Ni 3 V 2 O 8 , thus eliminating their practical utility for RAM applications. The scarcity of multiferroics possessing room temperature ferroic orderings continues to drive exploratory research in this field. For this reason, ferrites have garnered significant interest due to their often high ferroic ordering temperatures, for example in BiFeO 3 . Among all ferrites, hexaferrites are the most studied prototypical examples and constitute a specific subclass of ferrites that follows the stoichiometry Ba O– n Fe 2 O 3 , in which the n value dictates the nomenclature, i.e., ( n = 6) is a hexaferrite or ( n = 1) is a monoferrite. This versatile class of materials encompasses a wide range of related structures best described by Pullar, serving as the motivation for this work.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Switchable electric polarization and ferroelectric domains in a metal-organic-framework

Multiferroics and magnetoelectrics with coexisting and coupled multiple ferroic orders are materials promising new technological advances. While most studies have focused on single-phase or heterostructures of inorganic materials, a new class of materials called metal–organic frameworks (MOFs) has been recently proposed as candidate materials demonstrating interesting new routes for multiferroism and magnetoelectric coupling. Herein, we report on the origin of multiferroicity of (CH 3 ) 2 NH 2 Mn(HCOO) 3 via direct observation of ferroelectric domains using second-harmonic generation techniques. For the first time, we observe how these domains are organized (sized in micrometer range), and how they are mutually affected by applied electric and magnetic fields. Lastly, calculations provide an estimate of the electric polarization and give insights into its microscopic origin.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO{sub 3} thin film

Multiferroic Bismuth Ferrite (BiFeO{sub 3}) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO{sub 3} thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO{sub 3} and Fe{sub 2}O{sub 3} to pure BiFeO{sub 3} phase and, subsequently, to a mixture of BiFeO{sub 3} and Bi{sub 2}O{sub 3} with increase in the concentration of excess Bi from 0% to 15%. BiFeO{sub 3} thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe{sub 2}O{sub 3}). Deterioration in ferroic properties of BiFeO{sub 3} thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO{sub 3} thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm{sup 2} and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO{sub 3} thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO{sub 3} thin films exhibiting the improved multiferroic properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electric field stimulation setup for photoemission electron microscopes

Manipulating magnetisation by the application of an electric field in magnetoelectric multiferroics represents a timely issue due to the potential applications in low power electronics and the novel physics involved. Thanks to its element sensitivity and high spatial resolution, X-ray photoemission electron microscopy is a uniquely suited technique for the investigation of magnetoelectric coupling in multiferroic materials. In this work, we present a setup that allows for the application of in situ electric and magnetic fields while the sample is analysed in the microscope. As an example of the performances of the setup, we present measurements on Ni/Pb(Mg{sub 0.66}Nb{sub 0.33})O{sub 3}-PbTiO{sub 3} and La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/PMN-PT artificial multiferroic nanostructures.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update

Abstract This is an update of a previous review (Naumis et al 2017 Rep. Prog. Phys. 80 096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation ( P ) in graphene, (ii) time-dependent strain and its impact on graphene’s electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisation P on hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic ( σ ), electric ( P ) and magnetic ( M ) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI 2 . The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.

Physics↗
DOE OSTI2023

Creating a three-dimensional intrinsic electric dipole on rotated CrI 3 bilayers

Here two-dimensional (2D) materials are being explored as a novel multiferroic platform. One of the most studied magnetoelectric multiferroic 2D materials are antiferromagnetically coupled (AFM) CrI 3 bilayers. Neglecting magnetism, those bilayers possess a crystalline point of inversion, which is only removed by the antiparallel spin configuration among its two constituent monolayers. The resulting intrinsic electric dipole on those bilayers has a magnitude no larger than 0.04 pC/m, it points out of plane, and it reverts direction when the Ising-like-chromium spins are flipped (toward opposite layers versus away from opposite layers). The combined presence of antiferromagnetism and a weak intrinsic electric dipole makes this material a two-dimensional magnetoelectric multiferroic. Here, we remove the crystalline center of inversion of the bilayer by a relative 60° rotation of its constituent monolayers. This process enhances the out-of-plane intrinsic electric dipole tenfold with respect to its magnitude in the nonrotated AFM bilayer and also creates an even stronger and switchable in-plane intrinsic electric dipole. The ability to create a three-dimensional electric dipole is important because it enhances the magnetoelectric coupling on this experimentally accessible 2D material, which is explicitly calculated here as well.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Electrical control of magnetism by electric field and current-induced torques

The remanent magnetization of ferromagnets has long been studied and used to store binary information. While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility of doing it by electrical means instead. In the 1990s, Slonczewski and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current generated by a first ferromagnet may be used to switch the magnetization of a second one. This discovery drove the development of spin-transfer-torque magnetic random-access memories (MRAMs). More recent fundamental research revealed other types of current-induced torques named spin-orbit torques (SOTs) and will lead to a new generation of devices including SOT MRAMs and skyrmion-based devices. Parallel to these advances, multiferroics and their magnetoelectric coupling, first investigated experimentally in the 1960s, experienced a renaissance. Dozens of multiferroic compounds with new magnetoelectric coupling mechanisms were discovered and high-quality multiferroic films were synthesized (notably of BiFeO 3 ), also leading to novel device concepts for information and communication technology such as the magnetoelectric spin-orbit (MESO) transistor. The story of the electrical switching of magnetization, which is discussed in this review, is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO transistors, microwave emitters, spin diodes, skyrmion-based devices, components for neuromorphics, etc.). This pas de deux has led to major scientific and technological breakthroughs in recent decades (such as the conceptualization of pure spin currents, the observation of magnetic skyrmions, and the discovery of spin-charge interconversion effects). As a result, this field has not only propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, in this review, recent advances in the control of magnetism by electric fields and by current-induced torques are covered. Fundamental concepts in these two directions are reviewed first, their combination is then discussed, and finally current various families of devices harnessing the electrical control of magnetic properties for various application fields are addressed. The review concludes by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Field-Induced Spin-Modulated Transitions in Epitaxial (001) BiFeO{sub 3} Films

Alterations in the ground state of thin (001) films of a BiFeO{sub 3} (BFO)-type multiferroic in a magnetic field are studied theoretically, with changes in the energy of induced anisotropy taken into account. The anisotropy vs. field phase diagrams identifying the stability regions of homogeneous antiferromagnetic states and the regions of emergence of spatially modulated antiferromagnetic states are constructed for three mutually orthogonal orientations of applied magnetic field. We show that, as the magnetic field decreases, the transformation of a homogeneous phase into a spatially modulated state occurs at the instability point of the homogeneous state via gradual emergence of the conical phase that transforms into a planar cycloid with the decreasing magnetic field. A multiferroic film grown on a (001) substrate develops considerable anisotropy of the energy of spatially modulated state, depending on the modulation orientation. Meanwhile, cycloids with different orientations undergo the transitions from incommensurate phase into the homogeneous state differently: either the conical cycloid is formed followed by its collapse into the homogeneous state or an unlimitedly growing domain of the homogeneous phase is formed within the flat cycloid. Examples of field-induced changes in magnetization, with changes in spin states taken into account, are provided. These results are of value in practical applications of multiferroic strain engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Final Technical Report: Collaborative Research. Polymeric Muliferroics

The goal of this project is to investigate room temperature magnetism and magnetoelectric coupling of polymeric multiferroics. A new family of organic charge-transfer complexes has been emerged as a fascinating opportunity for the development of all-organic electrics and spintronics due to its weak hyperfine interaction and low spin-orbit coupling; nevertheless, direct observations of room temperature magnetic spin ordering have yet to be accomplished in organic charge-transfer complexes. Furthermore, room temperature magnetoelectric coupling effect hitherto known multiferroics, is anticipated in organic donor-acceptor complexes because of magnetic field effects on charge-transfer dipoles, yet this is also unexplored. The PIs seek to fundamental understanding of the synthetic control of organic complexes to demonstrate and explore room temperature multiferroicity.

36 MATERIALS SCIENCE↗
DOE OSTI2019

In situ scanning probe microscopy studies of cross-coupled domains and domain walls. Final technical report

The objective of this project is to explore the nanoscale emergent phenomena and to understand the unconventional properties of cross-coupled domains and domain walls in multiferroics, where both ferroelectricity and magnetism coexist. The giant magnetoelectric effect due to coupled ferroic orders in multiferroics is of both fundamental and technological interest and is promising for energy-efficient multifunctional applications. The presence of domains and domain walls is a distinguishing feature of any ferroic order; their responses to external stimuli determine the macroscopic properties and the functionalities of ferroic materials. To address the challenges and to directly visualize the cross-coupled domains and domain walls and their responses to the applied electric and magnetic fields, this project will develop a unique, high-resolution and high-sensitivity in situ scanning force microscopy (SFM). The real space imaging of domains and domain walls by SFM aims to fundamentally understand the nature of magnetoelectric cross-coupling in representative multiferroic and magnetoelectric materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas

Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this paper, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Nanoengineering room temperature ferroelectricity into orthorhombic SmMnO 3 films

Orthorhombic R MnO 3 ( R = rare-earth cation) compounds are type-II multiferroics induced by inversion-symmetry-breaking of spin order. They hold promise for magneto-electric devices. However, no spontaneous room-temperature ferroic property has been observed to date in orthorhombic R MnO 3 . Here, using 3D straining in nanocomposite films of (SmMnO 3 ) 0.5 ((Bi,Sm) 2 O 3 ) 0.5 , we demonstrate room temperature ferroelectricity and ferromagnetism with T C,FM ~ 90 K, matching exactly with theoretical predictions for the induced strain levels. Large in-plane compressive and out-of-plane tensile strains (-3.6% and +4.9%, respectively) were induced by the stiff (Bi,Sm) 2 O 3 nanopillars embedded. The room temperature electric polarization is comparable to other spin-driven ferroelectric R MnO 3 films. Also, while bulk SmMnO 3 is antiferromagnetic, ferromagnetism was induced in the composite films. The Mn-O bond angles and lengths determined from density functional theory explain the origin of the ferroelectricity, i.e. modification of the exchange coupling. Our structural tuning method gives a route to designing multiferroics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

An antisite defect mechanism for room temperature ferroelectricity in orthoferrites

Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO 3 , a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of Y Fe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Our work uncovers the distinctive role of antisite defects in providing a mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Probing the Interplay between Quantum Charge Fluctuations and Magnetic Ordering in LuFe2O4

The mechanisms producing strong coupling between electric and magnetic order in multiferroics are not always well understood, since their microscopic origins can be quite different. Hence, gaining a deeper understanding of magnetoelectric coupling in these materials is the key to their rational design. Here, we use ultrafast optical spectroscopy to show that the influence of magnetic ordering on quantum charge fluctuations via the double-exchange mechanism can govern the interplay between electric polarization and magnetism in the charge-ordered multiferroic LuFe2O4.

MAGNETIC PROPERTIES AND MATERIALS↗
DOE OSTI2023

Structural modulation and spin glassiness upon oxidation in oxygen storage material LnFeMnO 4+x for Ln = Y, Lu, and Yb

The mixed valence multiferroic LnFe 2+ Fe 3+ O 4 (where Ln = Y, Lu, and Yb) can reversibly uptake oxygen into its lattice, which is evidenced by a crystallographic phase transition along with the appearance of structural modulations. In this study, we show that the Mn-substituted version of this multiferroic can also be readily oxidized to LnFe 3+ Mn 3+ O 4.5 revealing similar oxygen storage behavior. Through neutron, electron, and synchrotron x-ray diffraction studies, we observe a structural modulation that we attribute to a displacement wave in the fully oxidized compound. This wave exhibits commensurability with a wavevector q = (-2/7, 1/7, 0). Bond valence summation analysis of plausible interstitial oxygen positions suggests that oxygen insertion likely occurs at the middle of the Fe/Mn–O bipyramid layers. The structural modulation of LnFeMnO 4.5 is two-dimensional, propagates along the ab-plane, and is highly symmetric as 12 identical modulation vectors are observed in the diffraction patterns. The nature of the lanthanide, Ln 3+ , does not seem to influence such modulations since we observe identical satellite reflections for all three samples of Ln = Y, Lu, and Yb. Both LnFeMnO 4 and LnFeMnO 4.5 display spin glassy behavior with 2D short-range magnetic ordering being observed in LnFeMnO 4 . Analysis of the neutron diffraction data reveals a correlation length of ~10 nm. Upon oxidation to LnFeMnO 4.5 , the short-range magnetic order is significantly suppressed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

GdWN 3 is a nitride perovskite

Nitride perovskites ABN3 are an emerging and highly underexplored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel A-site cations is one strategy to tune and expand such properties; for example, Gd 3+ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN 3 was a non-perovskite monoclinic structure. Here, we experimentally show that GdWN 3-y crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd 2-x W x N 3-y O y with oxygen content y < 0.05. Ex situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near x = 1. LeBail fits of synchrotron grazing incidence wide angle x-ray scattering data are consistent with a perovskite ground-state structure. Refined density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN 3 is a distorted Pnma perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN 3-y is paramagnetic down to T = 2 K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important path toward both the rapid expansion of the emerging family of nitride perovskites and understanding their potential multiferroic properties.

14 SOLAR ENERGY↗
DOE OSTI2021

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,2′-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗