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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Combining Sparse Approximate Factorizations with Mixed-precision Iterative Refinement

The standard LU factorization-based solution process for linear systems can be enhanced in speed or accuracy by employing mixed-precision iterative refinement. Most recent work has focused on dense systems. We investigate the potential of mixed-precision iterative refinement to enhance methods for sparse systems based on approximate sparse factorizations. In doing so, we first develop a new error analysis for LU- and GMRES-based iterative refinement under a general model of LU factorization that accounts for the approximation methods typically used by modern sparse solvers, such as low-rank approximations or relaxed pivoting strategies. We then provide a detailed performance analysis of both the execution time and memory consumption of different algorithms, based on a selected set of iterative refinement variants and approximate sparse factorizations. Our performance study uses the multifrontal solver MUMPS, which can exploit block low-rank factorization and static pivoting. We evaluate the performance of the algorithms on large, sparse problems coming from a variety of real-life and industrial applications showing that mixed-precision iterative refinement combined with approximate sparse factorization can lead to considerable reductions of both the time and memory consumption.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1989

The FORCE - A highly portable parallel programming language

This paper explains why the FORCE parallel programming language is easily portable among six different shared-memory multiprocessors, and how a two-level macro preprocessor makes it possible to hide low-level machine dependencies and to build machine-independent high-level constructs on top of them. These FORCE constructs make it possible to write portable parallel programs largely independent of the number of processes and the specific shared-memory multiprocessor executing them.

Jordan, Harry F.↗
DOE OSTI2019

Microstructure Anisotropy Effects on Fracture and Fatigue Mechanisms in Shape Memory Alloy Martensites

The chief scientific object was to investigate the fatigue and fracture mechanisms in NiTi shape memory alloys, in the presence of stress concentrating factors such as micro-pores and notches. In particular, the interactions between structure (factors related to the geometry of the specimen, such as holes, pores and notches) and microstructure (related to properties of the material such as grains, secondary phases, twins) in influencing the inelastic deformation, leading up to fracture in NiTi was examined. Primarily, there were two major thrusts. The first thrust focused on fracture behavior in Shape Memory Alloys where the high crystal symmetry cubic phase transformed into the low symmetry phase during deformation and propagation of cracks. This thrust revealed the interplay between size of micro-pores, size of grains and grain orientations in determining the resistance to crack growth, during cyclic tensile deformation of porous-like NiTi specimens. The role of secondary phases (impurities of Ti, often formed during fabrication) were also shown to induce local inelastic deformation gradients during tensile deformation and reduce overall extent of deformation. The second thrust focused on the fatigue and fracture behavior in the low crystal symmetry martensite phase. Unlike high symmetry phases, characterization of deformation in low symmetry phases such as martensitic NiTi has been challenging, due to a hierarchical microstructure spanning from nanoscale twins to the macroscale, a highly anisotropic microstructure stemming from the low crystal symmetry and a multitude of inelastic mechanisms for deformation. Thus, advanced X-ray techniques such as 3D high-energy diffraction microscopy and x-ray micro-Laue diffraction and spectroscopy were used in conjunction with traditional techniques such as SEM and TEM to understand the inelastic deformation in the martensite phase in NiTi, in the presence of notches. This thrust revealed a stark difference in deformation mechanisms based on the nature of stress: regions near the notch experience a highly triaxial stress while those far away experience a uniaxial stress. Additionally, while regions close to the notch were shown to deform locally by amorphization/nanocrystallization, ultimately leading to fracture, regions far away from the notch deformed in a more traditional manner, with detwinning and twin reorientation the primary mechanisms of deformation. More importantly, this thrust revealed that in the presence of structural factors such as notches, the traditional picture of reorientation (coalescence) of nanoscale martensite twins into increasingly larger domains with increased loading does not hold true, even up to fracture of the specimen. These conclusions will inform the modeling and understanding of deformation behavior of specimens, where structure and microstructure coexist and interact.

36 MATERIALS SCIENCE↗
DOE OSTI2025

First-principles investigation of the resistive switching energetics in monolayer MoS 2 : insights into metal diffusion and adsorption

A deeper understanding of resistive switching (RS) in 2D materials is essential for advancing neuromorphic computing. The Dissociation-Diffusion-Adsorption (DDA) model offers a useful framework for probing RS mechanisms in non-volatile memory (NVM) and in-memory computing. We have employed first-principles density functional theory (DFT) to explore dissociation, diffusion, and adsorption phenomena within the DDA model, focusing on the interactions between exemplary metal atoms (Au, Ag, Cu) and monolayer MoS 2 . Nudged elastic band (NEB) calculations evaluated diffusion barriers in pristine and sulfur-vacancy MoS 2 . Charged systems were modeled to assess the impact of applied bias on migration pathways. We also examined metal dissociation from bulk electrodes and adsorption at S vacancies. Ag/MoS 2 shows the lowest dissociation barrier (~0.034 eV), while Au and Cu exhibit similar values (~0.32 eV). These insights highlight Ag as a promising candidate for low-energy RS applications and provide guidance for optimizing switching efficiency in 2D memory devices.

Atomistic models↗
DOE OSTI2020

High-order matrix-free incompressible flow solvers with GPU acceleration and low-order refined preconditioners

In this work, we present a matrix-free flow solver for high-order finite element discretizations of the incompressible Navier-Stokes and Stokes equations with GPU acceleration. For high polynomial degrees, assembling the matrix for the linear systems resulting from the finite element discretization can be prohibitively expensive, both in terms of computational complexity and memory. For this reason, it is necessary to develop matrix-free operators and preconditioners, which can be used to efficiently solve these linear systems without access to the matrix entries themselves. The matrix-free operator evaluations utilize GPU-accelerated sum-factorization techniques to minimize memory movement and maximize throughput. The preconditioners developed in this work are based on a low-order refined methodology with parallel subspace corrections, as described for diffusion problems in [1]. The saddle-point Stokes system is solved using block-preconditioning techniques, which are robust in mesh size, polynomial degree, time step, and viscosity. For the incompressible Navier-Stokes equations, we make use of projection (fractional step) methods, which require Helmholtz and Poisson solves at each time step. The performance of our flow solvers is assessed on several benchmark problems in two and three spatial dimensions.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

A low-rank power iteration scheme for neutron transport criticality problems

Computing effective eigenvalues for neutron transport often requires a fine numerical resolution. Here, the main challenge of such computations is the high memory effort of classical solvers, which limits the accuracy of chosen discretizations. In this work, we derive a method for the computation of effective eigenvalues when the underlying solution has a low-rank structure. This is accomplished by utilizing dynamical low-rank approximation (DLRA), which is an efficient strategy to derive time evolution equations for low-rank solution representations. The main idea is to interpret the iterates of the classical inverse power iteration as pseudo-time steps and apply the DLRA concepts in this framework. In our numerical experiment, we demonstrate that our method significantly reduces memory requirements while achieving the desired accuracy. Analytic investigations show that the proposed iteration scheme inherits the convergence speed of the inverse power iteration, at least for a simplified setting.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1998

The SGI/Cray T3E: Experiences and Insights

The NASA Goddard Space Flight Center is home to the fifth most powerful supercomputer in the world, a 1024 processor SGI/Cray T3E-600. The original 512 processor system was placed at Goddard in March, 1997 as part of a cooperative agreement between the High Performance Computing and Communications Program's Earth and Space Sciences Project (ESS) and SGI/Cray Research. The goal of this system is to facilitate achievement of the Project milestones of 10, 50 and 100 GFLOPS sustained performance on selected Earth and space science application codes. The additional 512 processors were purchased in March, 1998 by the NASA Earth Science Enterprise for the NASA Seasonal to Interannual Prediction Project (NSIPP). These two "halves" still operate as a single system, and must satisfy the unique requirements of both aforementioned groups, as well as guest researchers from the Earth, space, microgravity, manned space flight and aeronautics communities. Few large scalable parallel systems are configured for capability computing, so models are hard to find. This unique environment has created a challenging system administration task, and has yielded some insights into the supercomputing needs of the various NASA Enterprises, as well as insights into the strengths and weaknesses of the T3E architecture and software. The T3E is a distributed memory system in which the processing elements (PE's) are connected by a low latency, high bandwidth bidirectional 3-D torus. Due to the focus on high speed communication between PE's, the T3E requires PE's to be allocated contiguously per job. Further, jobs will only execute on the user specified number of PE's and PE timesharing is possible but impractical. With a highly varied job mix in both size and runtime of jobs, the resulting scenario is PE fragmentation and an inability to achieve near 100% utilization. SGI/Cray has provided several scheduling and configuration tools to minimize the impact of fragmentation. These tools include PScheD (the political scheduler), GRM (the global resource manager) and NQE (the Network Queuing Environment). Features and impact of these tools will be discussed, as will resulting performance and utilization data. As a distributed memory system, the T3E is designed to be programmed through explicit message passing. Consequently, certain assumptions related to code design are made by the operating system (UNICOS/mk) and its scheduling tools. With the exception of HPF, which does run on the T3E, however poorly, alternative programming styles have the potential to impact the T3E in unexpected and undesirable ways. Several examples will be presented (preceeded with the disclaimer, "Don't try this at home! Violators will be prosecuted!")

Bernard, Lisa Hamet↗
DOE OSTI2019

Dynamical nonlinear memory capacitance in biomimetic membranes

Two-terminal memory elements, or memelements, capable of co-locating signal processing and memory via history-dependent reconfigurability at the nanoscale are vital for next-generation computing materials striving to match the brain’s efficiency and flexible cognitive capabilities. While memory resistors, or memristors, have been widely reported, other types of memelements remain underexplored or undiscovered. Here we report the first example of a volatile, voltage-controlled memcapacitor in which capacitive memory arises from reversible and hysteretic geometrical changes in a lipid bilayer that mimics the composition and structure of biomembranes. We demonstrate that the nonlinear dynamics and memory are governed by two implicitly-coupled, voltage-dependent state variables—membrane radius and thickness. Further, our system is capable of tuneable signal processing and learning via synapse-like, short-term capacitive plasticity. These findings will accelerate the development of low-energy, biomolecular neuromorphic memelements, which, in turn, could also serve as models to study capacitive memory and signal processing in neuronal membranes.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2013

Multilevel and long retentive resistive switching in low temperature nanostructured Cu/SiO{sub x}-W-SiO{sub x}/Pt

Amorphous SiO{sub x}-based memory films are fabricated at room temperature, and study on their resistive switching characteristics and improvement approaches is performed. Multilevel resistive states with large ratio 1: ∼10{sup 2}: 3 × 10{sup 5} and long retention exceeding 2 × 10{sup 6} s at ambient temperature and humidity are observed in Cu/SiO{sub x} (9 nm)-W (∼2 nm)-SiO{sub x} (9 nm)/Pt ultrathin stack. Nonvolatile switching is consistently realized in microscopy. Based on investigations of microscopic conduction and microstructure, tungsten incorporation with copper as relay bridges for conducting filaments is proposed to attribute to the performance improvement and the multilevel switching mechanism.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Low-field-actuated giant magnetocaloric effect and excellent mechanical properties in a NiMn-based multiferroic alloy

Multiferroic magnetic shape memory alloys with first-order magntostructural transformation exhibit much enhanced magnetocaloric effect which incorporates the latent heat associated with the phase transformation itself, but they suffer from the drawbacks of large hysteresis and transformation interval and consequently too high critical field to actuate the magnetocaloric effect, greatly impeding their applications. Here, by generating a kind of specific stacking-mediated structure of martensite through minor Al substitution to improve the geometric compatibility between martensite and austenite in the Ni 40 Co 10 Mn 40 Sn 9 Al 1 alloy, we greatly reduced the thermal hysteresis and transformation temperature interval while conserving the large magnetization difference between the two phases. Consequently, a low-field-actuated giant magnetocaloric effect with isothermal entropy change of 23 J kg –1 K –1 for a field change from 0 to 2 T, which is among the highest values reported heretofore for all magnetocaloric materials, was successfully achieved. Meanwhile, with minor Al substitution, the present single-phase multiferroic alloy that is intermetallic in nature exhibits superior mechanical properties, including excellent compressive properties over a wide temperature range and a relatively high fracture toughness, which are quite beneficial for practical applications. Lastly, by incorporating the advantages of low cost, environment friendliness and easy fabrication, this alloy shows great potential for magnetocaloric applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Moment-based adaptive time integration for thermal radiation transport

Here, in this paper we develop a framework for moment-based adaptive time integration of deterministic multifrequency thermal radiation transpot (TRT). We generalize our recent semi-implicit-explicit (IMEX) integration framework for gray TRT to multifrequency TRT, and also introduce a semi-implicit variation that facilitates higher-order integration of TRT, where each stage is implicit in all components except opacities. To appeal to the broad literature on adaptivity with Runge–Kutta methods, we derive new embedded methods for four asymptotic preserving IMEX Runge–Kutta schemes we have found to be robust in our previous work on TRT and radiation hydrodynamics. We then use a moment-based high-order-low-order representation of the transport equations. Due to the high dimensionality, memory is always a concern in simulating TRT. We form error estimates and adaptivity in time purely based on temperature and radiation energy, for a trivial overhead in computational cost and memory usage compared with the base second order integrators. We then test the adaptivity in time on the tophat and Larsen problem, demonstrating the ability of the adaptive algorithm to naturally vary the timestep across 4–5 orders of magnitude, ranging from the dynamical timescales of the streaming regime to the thick diffusion limit.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Local structure effects of carbon-doping on the phase change material Ge 2 Sb 2 Te 5

Ge 2 Sb 2 Te 5 is used in phase change memory, a nonvolatile memory technology, due to its phase change properties. The primary advantage of phase change memory over the state-of-the-art (flash memory) is its simple and small device geometry, which allows for denser nodes and lower power consumption. In phase change memory, resistive heating induces fast switching between the high resistance amorphous and low resistance crystalline phases, corresponding to storage of low and high digital states, respectively. However, the instability of the amorphous phase of Ge 2 Sb 2 Te 5 presents issues with processing and long-term data storage; such issues can be resolved by C doping, which stabilizes the amorphous phase and raises the crystallization temperature. To better understand the local structural effects of C doping on Ge 2 Sb 2 Te 5 , in situ Ge K-edge X-ray absorption spectroscopy measurements were taken during heating of films with various C doping concentrations. Here, the range of structural transformation temperatures derived from X-ray absorption near-edge structure analysis across the C doping series proved narrower than crystallization temperatures reported in similar in situ X-ray diffraction experiments, which may reflect changes in local structure that precede long-range ordering during crystallization. In addition, rigorous extended X-ray absorption fine structure fitting across and between temperature series revealed effects of C doping on the rigidity of Ge–Te bonds at low (2 at% and 4 at%) C concentrations.

Langhout, John D.↗
DOE OSTI2014

An unusual route to polarization reversal in ferroelectric ultrathin nanowires

Ferroelectric nanowires are promising candidates for miniaturized ferroelectric devices. Some potential nanoscale applications of the nanowires, such as ultra high density ferroelectric memory, utilize their reversible polarization. To meet the ever increasing demand for low energy consumption, it is extremely desirable to reduce the operational fields associated with polarization reversal. In this Letter, we use first-principles-based simulations to explore an unusual route to polarization reversal that utilizes a combination of relatively low bias field and THz pulsed radiation. Such an approach allows for lower operational fields and may lead to other potential applications such as THz radiation sensing and remote switches.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Field-Deployable Quantum Memory for Quantum Networking

High-performance quantum memories are an essential component for regulating temporal events in quantum networks. As a component in quantum-repeaters, they have the potential to support the distribution of entanglement beyond the physical limitations of fiber loss. This will enable key applications such as quantum key distribution, network-enhanced quantum sensing, and distributed quantum computing. Here, we present a quantum memory engineered to meet real-world deployment and scaling challenges. The memory technology utilizes a warm rubidium vapor as the storage medium, and operates at room temperature, without the need for vacuum- and/or cryogenic- support. Here, we demonstrate performance specifications of high-fidelity retrieval (95%) and low operation error (10 –2 ) at a storage time of 160 µs for single-photon level quantum memory operations. We further show a substantially improved storage time (with classical-level light) of up to 1ms by suppressing atomic diffusions. The device is housed in an enclosure with a standard 2U rackmount form factor, and can robustly operate on a day scale in a noisy environment. This result marks an important step toward implementing quantum networks in the field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Device Feasibility Analysis of Multi-level FeFETs for Neuromorphic Computing

As an emerging non-volatile memory device technology, Ferroelectric Field-Effect Transistors (FeFETs) can enable low-power, adaptive intelligent system design. However, device dimension and operating voltage dependent reliability issues of scaled FeFETs can ultimately lead to degraded performance in solving machine learning tasks. In this article, detailed experimental characterization of FeFET devices of different dimensions have been carried out to explicitly evaluate the non-ideal behavior in device conductance programming properties like number of programming states, cycle-to-cycle (C2C) variations, device-to-device (D2D) variations, and state retention. A hardware-aware software simulation approach has been adopted to capture the adversarial effects of the non-idealities on recognition accuracy through algorithm-level performance assessment by including them in NeuroSim, a popular neural network hardware simulator, to execute a neural network model considering all other hardware constraints. With the added non-idealities, significant accuracy degradation has been observed compared to the ideal scenarios where D2D variations play the most critical role. Thereafter, feasibility of a variation-aware training method has been evaluated to tackle the accuracy drop.

42 ENGINEERING↗
DOE OSTI2021

Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories

We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging technologies, the greatest challenge for FTJs is the tradeoff between integration density and read performance. Our analysis highlights the need to co-optimize the ferroelectric thickness of the FTJ and read/write voltages to achieve proper functionality at large array sizes. Our analysis shows that FTJ-based crossbar achieves 93% higher sense margin at isoread power of 116 nW (per bit), but this FTJ design comes at a cost of 9.28× higher write power at isowrite time of 250 ns. In response, we study the potential tradeoffs of design points outside the feasible region to understand what device characteristics are desired to overcome such challenges.

Jao, Nicholas↗
DOE OSTI2026

L-VISP: LSTM Visualization for Interpretable Symptom Prediction in Patient Cohorts

Symptom modelling in head and neck cancer is challenged by the complexity of heterogeneous patient data, leading to an interest in deep learning approaches. Although Long Short-Term Memory Networks (LSTMs) have shown great results in patient risk prediction, their low interpretability requires data modellers to collaborate with clinical experts to validate the results. We present L-VISP, a human–machine solution that uses visual analytics for LSTM modelling in clinical research. L-VISP uses custom visual encodings to make multiple LSTM variants interpretable, supporting a full range of analysis, from understanding model operations and evaluating performance to interpreting results in a clinical context. We evaluate L-VISP with data modellers and a clinical oncologist and present the takeaways from this multidisciplinary collaboration.

LSTM modeling↗
NASA NTRS1971

Nonvolatile read/write memory element - A concept

Memory, with limited number of programming cycles, is achieved by using verticle, fusible links in series with oxide breakthrough elements. Memory elements are fabricated with integrated circuit technology and are ideal for low power digital computer application.

Cricchi, J. R.↗