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The main characteristics of a superconducting thin film microwave mixer, i.e., conversion efficiency and bandwidth are analyzed. The optimum operating regime of the nonlinear element is determined. Results of calculations are compared with the experimental ones. Experimental data on the noise in the superconducting films in a wide frequency range are presented.
This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPATT amplifier not only met or exceeded all the program objectives, but also possesses the ability to operate in the pulse mode, which was not called for in the original contract requirements. The ability to operate in the pulse mode is essential for TDMA (Time Domain Multiple Access) operation. An output power of 20 W was achieved with a 1-dB instantaneous bandwidth of 260 MHz. The amplifier has also been tested in pulse mode with 50% duty for pulse lengths ranging from 200 ns to 2 micro s with 10 ns rise and fall times and no degradation in output power. This pulse mode operation was made possible by the development of a stable 12-diode power combiner/amplifier and a single-diode pulsed driver whose RF output power was switched on and off by having its bias current modulated via a fast-switching current pulse modulator. Essential to the overall amplifier development was the successful development of state-of-the-art silicon double-drift IMPATT diodes capable of reproducible 2.5 W CW output power with 12% dc-to-RF conversion efficiency. Output powers of as high as 2.75 W has been observed. Both the device and circuit design are amenable to low cost production.
Radioisotope Thermoelectric Generators (RTGs) were extensively used in past space missions with great success. An improved generation of RTGs employing a new lightweight, modular heat source is being built by the DOE for NASA launches in 1986. More advanced modular RTGs which promise power-to-weight ratios of over 8.8 watts(e)/kg (4 watts(e)/lb) are currently under development by the DOE and could be flight-ready within five years. Dynamic Isotope Power Systems (DIPS) which offer 18-20% conversion efficiencies were demonstrated by the DOE in ground tests. DIPS would be useful for several military missions requiring power in the low-kilowatt range. These systems could also be brought to flight readiness by the DOE following receipt of firm user requirements.
Hydrovolcanism is a common phenomena produced by the interaction of magma or magmatic heat with an external source of water, such as a surface body, an aquifer, or a glacier. The effects include hydrofracture of existing rock units in the subsurface and the formation of hyaloclastites in a subaqueous environment. Hydroexplosions originate within a few kilometers of the surface. They may be relatively small, phreatic events or devastating complex blasts. Large-scale experiments determined that the optimal mixing ratio of water to basaltic melt (thermite plus silicates) for efficient conversion of thermal energy into mechanical energy is in the range of 0.1 to 0.3. Based on experimental results, eruptions can be classified as dominantly magmatic if the ratio of external water to magma is less than 0.2. Eruptions with water/melt ratios in the range of 0.2 to 1.0 are highly explosive and carry tephra in a hot vapor that contains dominantly superheated (dry) steam.
The theoretical models now available that characterize heavily doped (highly conducting) regions in silicon are survyed. Analytical and numerical approaches that determine the influence of such regions on the conversion efficiency of solar cells are examined. Although dilutely doped silicon is well characterized except for some disagreement about optical absorption coefficients, what exists now for heavily doped silicon and its interplay with adjoining regions is an incomplete theory in which not all contributers to transport, recombination, generation, and trapping are defined. Further, the parameters relating to these mechanisms and their values as determined by experiment are subject to various interpretations. The characterization of heavily doped silicon is treated not as a theory but rather as an imperfectly articulated and incompletely formalized body of experience. This view is intended to help point the way toward the attainment of a more complete of heavily doped silicon and thereby toward more informed designs of solar cells. Because computer programs constitute tools both for design and for estimating performance limits, the review includes some remarks pertinent to existing and developing programs.
Crystalline silicon solar power modules are examined for reliability and cost effectiveness. A goal of 12% solar energy conversion efficiency is considered feasible at a cost of 12/kWh, and a decision is made to limit consideration to float zone silicon wafer and dendritic web silicone modules. A preliminary module packaging configuration of glass/ethylene vinyl acetate/plastic film is selected. Anticipated module efficiency levels are 12.6% at 25 C and 11.5% at NOCT (Nominal Operating Cell Temperature).
Spherically accreting black holes may sustain strong collisionless shocks, downstream of which the fluid approximation is not valid. The proton-electron Coulomb exchange provides for the downstream matter diffusion into the hole. Energy conversion efficiencies upward of 10-30 percent are obtained, with most of the luminosity in hard X-rays and gamma-rays. The whole spectrum and its application for radio-quiet QSO's and galactic X- and gamma-ray sources are discussed.
Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).
Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.
Air-mass-zero open-circuit voltage increased to 650 mV. Oxide-chargeinduced high/low emitter solar cell, electron accumulation layer induced by positive charge. High/low emitter suppresses dark emitter recombination current, resulting in power-conversion efficiencies significantly higher than previously achieved.
Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.
A self-consistent set of nonlinear and relativistic wave-particle equations are derived for a magnetized beam-plasma system interacting with electromagnetic cyclotron waves. In particular, the high-frequency cyclotron mode interacting with a streaming and gyrating electron beam within a background plasma is considered in some detail. This interaction mode may possibly find application as a high-power source of coherent short-wavelength radiation for laboratory devices. The background plasma, although passive, plays a central role in this mechanism by modifying the dielectric properties in which the magnetized electron beam propagates. For a particular choice of the transverse beam velocity (i.e., the speed of light divided by the relativistic mass factor), the interaction frequency equals the nonrelativistic electron cyclotron frequency times the relativistic mass factor. For this choice of transverse beam velocity the detrimental effects of a longitudinal beam velocity spread is virtually removed. Power conversion efficiencies in excess of 18 percent are both analytically calculated and obtained through numerical simulations of the wave-particle equations. The quality of the electron beam, degree of energy and pitch angle spread, and its effect on the beam-plasma cyclotron instability is studied.
In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.
Magnetohydrodynamic (MHD) energy conversion systems of the pulsed laser-supported detonation (LSD) wave, plasma MHD, and liquid-metal MHD (LMMHD) types are assessed for their potential as space-based laser-to-electrical power converters. These systems offer several advantages as energy converters relative to the present chemical, nuclear, and solar devices, including high conversion efficiency, simple design, high-temperature operation, high power density, and high reliability. Of these systems, the Brayton cycle liquid-metal MHD system appears to be the most attractive. The LMMHD technology base is well established for terrestrial applications, particularly with regard to the generator, mixer, and other system components. However, further research is required to extend this technology base to space applications and to establish the technology required to couple the laser energy into the system most efficiently. Continued research on each of the three system types is recommended.
The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The performance goals of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10-year lifetime. The final design of the 60 GHz IMPATT structure evolved from computer simulations performed at the University of Michigan. The initial doping profile, involving a hybrid double-drift (HDD) design, was derived from a drift-diffusion model that used the static velocity-field characteristics for GaAs. Unfortunately, the model did not consider the effects of velocity undershoot and delay of the avalanche process due to energy relaxation. Consequently, the initial devices were oscillating at a much lower frequency than anticipated. With a revised simulation program that included the two effects given above, a second HDD profile was generated and was used as a basis for fabrication efforts. In the area of device fabrication, significant progress was made in epitaxial growth and characterization, wafer processing, and die assembly. The organo-metallic chemical vapor deposition (OMCVD) was used. Starting with a baseline X-Band IMPATT technology, appropriate processing steps were modified to satisfy the device requirements at V-Band. In terms of efficiency and reliability, the device requirements dictate a reduction in its series resistance and thermal resistance values. Qualitatively, researchers were able to reduce the diodes' series resistance by reducing the thickness of the N+ GaAs substrate used in its fabrication.
In 1975, the U.S. Government contracted the Jet Propulsion Lab. to develop, by 1985, in conjunction with industry, the photovoltaics (PV) module and array technology required for widespread use of photovoltaics as a significant terrestrial energy source. As a result, a project that eventually became known as the Flat Plate Solar Array (FSA) Project was formed to manage an industry, university, and Government team to perform the necessary research and development. The original goals were to achieve widespread commercial use of PV modules and arrays through the development of technology that would allow them to be profitably sold for $1.07/peak watts (1985 dollars). A 10% module conversion efficiency and a 20 year lifetime were also goals. It is intended that the executive summary provide the means by which one can gain a perspective on 11 years of terrestrial photovoltaic research and development conducted by the FSA Project.
The overall energy conversion efficiency of a hydrogen-bromine energy storage system is highly dependent upon the characteristics and performance of the ion-exchange membrane utilized as a half-cell separator. The electrochemical performance and transport properties of a duPont Nafion membrane in an aqueous HBr-Br2 environment were investigated. Membrane conductivity data are presented as a function of HBr concentration and temperature for the determination of ohmic voltage losses across the membrane in an operational cell. Diffusion-controlled bromine permeation rates and permeabilities are presented as functions of solution composition and temperature. Relationships between the degree of membrane hydration and the membrane transport characteristics are discussed. The solution chemistry of an operational hydrogen-bromine cell undergoing charge from 45% HBr to 5% HBr is discussed, and, based upon the experimentally observed bromine permeation behavior, predicted cell coulombic losses due to bromine diffusion through the membrane are presented as a function of the cell state-of-charge.
A new type of silicon solar cell has been developed. It is called the point-contact cell because the metal semiconductor contacts are restricted to an array of small points on the back of the cell. The point contact cell has recently demonstrated 22 percent conversion efficiency at one sun and 27.5 percent at 100 suns under an AM1.5 spectrum.