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At least 505 records · Page 28
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Diagnosing Cloud Biases in the GFDL AM3 Model With Atmospheric Classification

In this paper, we define a set of 21 atmospheric states, or recurring weather patterns, for a region surrounding the Atmospheric Radiation Measurement Program's Southern Great Plains site using an iterative clustering technique. The states are defined using dynamic and thermodynamic variables from reanalysis, tested for statistical significance with cloud radar data from the Southern Great Plains site, and are determined every 6 h for 14 years, creating a time series of atmospheric state. The states represent the various stages of the progression of synoptic systems through the region (e.g., warm fronts, warm sectors, cold fronts, cold northerly advection, and high-pressure anticyclones) with a subset of states representing summertime conditions with varying degrees of convective activity. We use the states to classify output from the NOAA/Geophysical Fluid Dynamics Laboratory AM3 model to test the model's simulation of the frequency of occurrence of the states and of the cloud occurrence during each state. The model roughly simulates the frequency of occurrence of the states but exhibits systematic cloud occurrence biases. Comparison of observed and model-simulated International Satellite Cloud Climatology Project histograms of cloud top pressure and optical thickness shows that the model lacks high thin cloud under all conditions, but biases in thick cloud are state-dependent. Frontal conditions in the model do not produce enough thick cloud, while fair-weather conditions produce too much. Finally, we find that increasing the horizontal resolution of the model improves the representation of thick clouds under all conditions but has little effect on high thin clouds. However, increasing resolution also changes the distribution of states, causing an increase in total cloud occurrence bias.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

Bias‐Dependent Quantum Efficiency Reveals Recombination Pathways in Thin Film Solar Cells

Identifying where recombination predominantly occurs—whether at the front interface, back interface, or throughout the bulk—is crucial for optimizing CdSeTe solar cells and many other photovoltaic device architectures. Here, a simple and effective diagnostic is demonstrated: measuring external quantum efficiency (QE) under varying forward biases. The drift–diffusion simulations reveal that each recombination pathway leaves a distinct bias-induced signature in the normalized QE: a progressive drop at long wavelengths for back-limited devices, a short-wavelength decline for front-limited devices, and a relatively uniform decrease across all wavelengths for bulk-limited devices. These predictions are validated with experiments on As-doped and Cu-doped CdSeTe devices, with and without passivation layers or different front buffers. In each case, the observed bias-dependent QE spectral changes align with the simulated recombination map. Because this method uses standard QE instrumentation, it offers a broadly accessible and cost-efficient means to diagnose recombination pathways—extending beyond CdSeTe to other thin-film and emerging solar cell technologies. By pinpointing recombination bottlenecks, researchers and manufacturers can strategically refine doping profiles, passivation schemes, and interface designs to further improve device performance.

CdTe↗
DOE OSTI2020

Behavior of Na and RbF-Treated CdS/Cu(In,Ga)Se 2 Solar Cells with Stress Testing under Heat, Light, and Junction Bias

In this work, the effects of Na and RbF alkali treatment on the metastability behavior of CdS/Cu(In,Ga)Se 2 solar cells are investigated with stress factors of heat, junction bias, and illumination. Four device types with and without Na or RbF treatments are subjected to heat- and light-soaking under open- and short-circuit (OC, SC) junction bias. Low-Na devices show a higher bandgap due to increased minimum Ga content, higher recombination current, and lower open-circuit voltage (V OC ). Devices with RbF post-deposition treatment (PDT) show an improvement in net doping density ≈10 16 cm –3 , V OC , and efficiency. Heat- and light-soaking under OC junction bias provokes an increase in net carrier concentration and V OC irrespective of the alkali treatments. After SC stress, a decrease in V OC and net carrier concentration is observed, which can be stabilized by RbF-PDT. An increase in Na and oxygen concentration in CIGS is observed for baseline and low-Na devices, respectively, after OC stress. The oxygen concentration in CdS decreases after heat- and light-soaking for devices without RbF-PDT, whereas it remains unchanged for devices with RbF-PDT. The atomic concentration profiles in CIGS significantly stabilize as a function of stress with the addition of RbF-PDT.

14 SOLAR ENERGY↗
DOE OSTI2017

Frequency Limitation Due to Switching Transition of the Bias Current in Bidirectional RSFQ Logic

Switching time limitations of the ac bias current of Josephson junctions in bidirectional rapid single flux quantum (RSFQ) logic circuits are investigated in order to determine the limits to the maximum possible operating frequency. We introduce a new approach based on modifying the bias current parameters and determining the inductance values in the circuit for reducing the switching transition time of the bias current through the junctions. We have simulated and optimized the timing and the operation of the bidirectional nondestructive readout and Josephson transmission line cells in this respect to demonstrate the results of utilizing the proposed approach. We successfully reduced the unwanted spike-type signals across the inductances which are made through the transitions during the fast switching times limiting the operation frequency. This is while we have also removed the consequent destructive spikes at the output. We have included the effects of other determining parameters of the circuit in this investigation and found their relatively optimal values to improve the temporal behavior of the bidirectional RSFQ cells. The results of the proposed approach leading to the fastest possible operation of the considered gates obtained in this work are thoroughly reported.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Particle Size-Dependent Zero-Field Exchange Bias in LaFeO {sub 3} Nanoparticles

The present communication deals with particle size-dependent zero-field cooled exchange effect in LaFeO{sub 3} (LFO). LFO nanoparticles were prepared by PVA-based sol-gel method. The sample was calcined at different temperatures (700, 750, and 800 {sup ∘}C) to tune the average particle size. The detailed crystal structural and their geometrical parameters were examined by means of Rietveld refinement using x-ray diffraction data. The different techniques such as Scherrer’s method, Williamson Hall method, FESEM, and TEM were applied to accurately determine the average particle size. Zero-field cooled exchange bias and weak ferromagnetism in antiferromagnetic nanoparticles was observed for all samples using hysteresis loop measurement. The training effect was studied to confirm that the loop shift originates due to exchange bias. Exchange bias as well as coercivity are strongly related to the particle size at low and room temperature. The results clearly demonstrate that the process of calcination tailor the overall properties of material which makes it a promising candidate for device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Influence of Bias Current on Off-Diagonal Magnetoimpedance in Composite Wires

The off-diagonal magnetoimpedance in a composite wire consisting of a highly conductive inner core covered by a soft magnetic layer is studied theoretically. In the presence of bias current, the field dependence of the off-diagonal magnetoimpedance becomes asymmetric due to the combination of the circular magnetic field produced by the bias current and a helical anisotropy in the magnetic layer of the composite wire. The dependences of the asymmetric off-diagonal magnetoimpedance on the external field, frequency, and bias current are investigated. It is demonstrated that the off-diagonal magnetoimpedance in composite wires has high field sensitivity and exhibits nearly linear behavior at low external fields. The influence of the wire parameters such as the anisotropy axis angle, the magnetic layer thickness, and conductivity on the field sensitivity of the off-diagonal magnetoimpedance is analyzed. The results obtained may be useful for development of weak magnetic-field sensors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Structural and Mechanical Properties of Zr-Si-N Coatings Deposited by Arc Evaporation at Different Substrate Bias Voltages

ZrN and Zr-Si-N coatings were formed using vacuum-arc plasma fluxes deposition system at the substrate bias voltage (U{sub B}) ranged from − 50 to − 220 V on HS6-5-2 steel substrates. The structural, mechanical and tribological properties were characterized using x-ray diffraction, atomic force microscopy, scanning electron microscopy, optical microscopy, nanoindentation and ball-on-disk test. The surface roughness parameter Ra of ZrN coatings is lower than Zr-Si-N coatings. Both roughness Ra of Zr-Si-N coatings and the number of surface defects with mainly small dimensions to 1 µm decrease with increasing negative substrate bias voltage. The addition of silicon to ZrN significantly reduces the crystallite size, from about 18.3 nm for ZrN coating to 6.4 nm for Zr-Si-N coating both deposited at the same U{sub B} = − 100 V and 7.8 nm for U{sub B} = − 150 V. The hardness of Zr-Si-N coatings increases to about 30 GPa with the increase in negative substrate bias voltage (U{sub B} = − 220 V). Adhesion of the coatings tested is high, and critical load is above 80 N and reduces with U{sub B} increase. Coefficient of friction determined using AFM shows similar trend as surface roughness in microscale.

36 MATERIALS SCIENCE↗
DOE OSTI2023

An Analysis of FPGA LUT Bias and Entropy for Physical Unclonable Functions

Process variations within Field Programmable Gate Arrays (FPGAs) provide a rich source of entropy and are therefore well-suited for the implementation of Physical Unclonable Functions (PUFs). However, careful considerations must be given to the design of the PUF architecture as a means of avoiding undesirable localized bias effects that adversely impact randomness, an important statistical quality characteristic of a PUF. Here in this paper, we investigate a ring-oscillator (RO) PUF that leverages localized entropy from individual look-up table (LUT) primitives. A novel RO construction is presented that enables the individual paths through the LUT primitive to be measured and isolated at high precision, and an analysis is presented that demonstrates significant levels of localized design bias. The analysis demonstrates that delay-based PUFs that utilize LUTs as a source of entropy should avoid using FPGA primitives that are localized to specific regions of the FPGA, and instead, a more robust PUF architecture can be constructed by distributing path delay components over a wider region of the FPGA fabric. Compact RO PUF architectures that utilize multiple configurations within a small group of LUTs are particularly susceptible to these types of design-level bias effects. The analysis is carried out on data collected from a set of identically designed, hard macro instantiations of the RO implemented on 30 copies of a Zynq 7010 SoC.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

How close are urban scale building simulations to measured data? Examining bias derived from building metadata in urban building energy modeling

Residential and commercial buildings in the United States accounted for 40% of total energy in 2020. Building energy modeling (BEM) is a useful tool that allows individuals, researchers, companies, or utilities to save energy by optimizing buildings through estimation of building technology savings and performance projection of building energy under various environmental conditions. Urban building energy modeling (UBEM) expands the scope beyond individual buildings to the buildings in a neighborhood, city, utility and more. Yet there is a knowledge gap in the literature as to how these models compare to measured data on an individual and aggregated basis. As UBEM data and methods continue to develop, it is important to consider the accuracy, bias, and limitations of the models. Here, nation-scale data and UBEM software suite named Automatic Building Energy Modeling (AutoBEM) was used to model 50,843 buildings in Chattanooga, Tennessee. The uncalibrated simulation results were compared to aggregated 15-minute electricity data for the year 2019 with visualizations highlighting sources of bias in building data and the AutoBEM framework while considering how they relate to other UBEM methods. Estimation of building type and year of constructions are found to be the major sources of bias. Accounting for the amount of conditioned area per building significantly improves the overall fit of the simulated energy use intensity. it was found that inherent variation in building energy use contributes to R 2 values between 0.008 and 0.095 across building types but slope values near 1 for the total number of buildings. This indicates the need for building aggregation for representative building energy modeling with data sources available at an urban scale while illustrating the need for additional individual building data and model improvement beyond the originally produced UBEM models for individual building analysis.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Turbulence-induced bias in time-averaged laser absorption tomography of correlated concentration and temperature fields with a first-order correction

The influence of correlated scalar fluctuations on time-averaged laser absorption tomography measurements of temperature and species in a piloted turbulent premixed flame was examined using a coupled spectroscopic and fluid-dynamic analysis. To understand bias associated with turbulence, spatio-temporally resolved temperature and species mole fraction profiles predicted by large eddy simulations (LES) were used to synthetically generate time-resolved line-of-sight absorption measurements at short time scales (microsecond) to reflect the unsteady nature of a canonical jet burner across various transverse measurement planes. Inversion methods were employed on the time-averaged line-of-sight data to produce radially-resolved temperature and mole fraction profiles, analogous to those produced by laser absorption tomography performed on a time-averaged axisymmetric flowfield. It is shown that bias in the measurements compared to true time-averaged scalar fields is a function primarily of temperature dependence in absorptivity and non-zero correlation between temperature and species concentration scalars. Finally, a first-order correction to tomography measurements is proposed to account for the bias based on estimated correlations and the known spectroscopic parameters of the probed absorption transitions.

42 ENGINEERING↗
DOE OSTI2021

Sluggish, chemical bias and percolation phenomena in atomic transport by vacancy and interstitial diffusion in Ni-Fe alloys

In this paper, we report the results of extended atomistic modeling of intrinsic mobility of point defects and associated atomic transport in Ni-Fe model binary alloys. We consider the effects of composition and temperature and present evidence of the sluggish and chemically biased diffusion, and percolation effects occurring in atomic transport via the vacancy and interstitial migration mechanisms. The results are analyzed and discussed in the light of previous studies and some experimental observations. It is demonstrated that the sluggish diffusion, the chemically biased diffusion, and the percolation are interlinked phenomena that are defined by the chemical complexity of particular alloys. Methods for predicting these phenomena in multicomponent alloys are discussed.We report a fundamental understanding of sluggish diffusion, chemically-biased diffusion, as well as percolation phenomena, in Ni-Fe random alloys for vacancy and interstitial atom migration mechanisms.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Strategies to minimize the influence of instrumental bias in neutron scattering

The influence of instrumental bias on neutron scattering measurements that involve a change between two experimental states is studied analytically and computationally. Different sources of bias were applied to an unperturbed (perfect) data stream. The influence of bias on the measurement was quantified and means to mitigate it is demonstrated. We find frequent changes of state are better than fewer, and evenly alternating between changes of state is often unwise.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Global mapping of urban thermal anisotropy reveals substantial potential biases for remotely sensed urban climates

Urban thermal anisotropy (UTA) drastically biases satellite-derived urban surface temperatures and fluxes, and consequently inhibits a more comprehensive understanding of global urban climates. However, UTA patterns and associated biases in observed urban climate variables have not been investigated across an adequate number of global cities with diverse contexts; nor is it known whether there are globally measurable factors that are closely related to the UTA intensity (UTAI, quantified as the maximum difference between the nadir and off-nadir urban thermal radiation). Here we investigate the UTAI over more than 5500 cities worldwide using the moderate resolution imaging spectroradiometer (MODIS) multi-angle land surface temperature (LST) observations from 2003 to 2021. The results show that the global mean UTAI can reach 5.1, 2.7, 2.4, and 1.7 K during summer daytime, winter daytime, summer nighttime, and winter nighttime, respectively. Using nadir LST observations as a reference, our analysis reveals that UTA can lead to an underestimation of satellite-based urban surface sensible heat fluxes ( H ) by 45.4% and surface urban heat island intensity ( I s ) by 43.0% when using LST observations obtained from sensor viewing zenith angles (VZAs) of ±60°. However, practitioners can limit the biases of H and I s within ±10% by using LSTs from sensor VZAs within ±30°. We find that UTAI is closely related to urban impervious surface percentage and surface air temperature across global cities. In conclusion, these findings have implications for angular normalization of satellite-retrieved instantaneous LST observations across cities worldwide.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2021

Understanding interfacial chemistry of positive bias high-voltage degradation in photovoltaic modules

Photovoltaic module degradation from a high system voltage is a prevalent degradation mode in the field, where the enabling degradation mechanisms are inherently dependent on the voltage bias polarity of the installed system. In this study, the effects of positive bias on module performance are confirmed and the underlying chemical degradation processes are more thoroughly investigated to reveal different degradation pathways from those previously reported in negative bias studies. When cells are under +1000 V stress, crystalline silicon mini-modules with poly(ethylene-co-vinyl acetate) (EVA) encapsulant demonstrated a significant photocurrent loss due to EVA discoloration and delamination from increased chemical reactivity at the front-side EVA/cell metallization interface. Brown discoloration of the EVA encapsulant near the cell gridlines is linked to an electrochemical reaction at the Ag gridlines under hot and humid conditions (85 °C, 85% relative humidity). Chemical compositional analysis using X-ray photoelectron spectroscopy (XPS) confirmed that the discoloration is attributed to the formation of silver sulfide (Ag 2 S) and/or silver oxide (Ag 2 O) species at the EVA/Ag gridline interface. The subsequent migration of Ag ions from the cell gridlines into the bulk of the EVA was evident from XPS depth profiling and optical microscopy. However, the Ag signal was not detected at the EVA/glass interface, inferring limited ionic transport through the nominally 0.45 mm thick encapsulant. For the samples studied herein, the sulfur is believed by the process of elimination to come from the ambient air, diffusing into the module through the permeable polymer backsheet.

14 SOLAR ENERGY↗
DOE OSTI2016

MicroRNA-mediated Th2 bias in methimazole-induced acute liver injury in mice

MicroRNA (miRNA) is a class of small non-coding RNAs containing approximately 20 nucleotides that negatively regulate target gene expression. Little is known about the role of individual miRNAs and their targets in immune- and inflammation-related responses in drug-induced liver injury. In the present study, involvement of miRNAs in the T helper (Th) 2-type immune response was investigated using a methimazole (MTZ)-induced liver injury mouse model. Co-administration of L-buthionine-S,R-sulfoximine and MTZ induced acute hepatocellular necrosis and elevated plasma levels of alanine aminotransferase (ALT) from 4 h onward in female Balb/c mice. The hepatic mRNA expression of Th2 promotive factors was significantly increased concomitantly with plasma ALT levels. In contrast, the hepatic mRNA expression of Th2 suppressive factors was significantly decreased during the early phase of liver injury. Comprehensive profiling of hepatic miRNA expression was analyzed before the onset of MTZ-induced liver injury. Using in silico prediction of miRNAs that possibly regulate Th2-related genes and subsequent quantification, we identified up-regulation of expression of miR-29b-1-5p and miR-449a-5p. Among targets of these miRNAs, down-regulation of Th2 suppressive transcription factors, such as SRY-related HMG-box 4 (SOX4) and lymphoid enhancer factor-1 (LEF1), were observed from the early phase of liver injury. In conclusion, negative regulation of the expression of SOX4 by miR-29b-1-5p and that of LEF1 by miR-449a-5p is suggested to play an important role in the development of Th2 bias in MTZ-induced liver injury. - Highlights: • Methimazole induced hepatic Th2 bias in the pathogenesis of liver injury in mice. • Rapid down-regulation of SOX4 and LEF1 may initiate and/or maintain hepatic Th2 bias. • Negative regulation of SOX4 by miR-29b-1-5p and LEF1 by miR-449a-5p was suggested.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2017

Voltage Dependence of Molecule–Electrode Coupling in Biased Molecular Junctions

Biased interfaces between individual molecules and metallic electrodes are central in many nanoscale devices. A key quantity that governs the nature of the metal–molecule interface is the degree of hybridization between frontier orbitals of the molecule and electrode continuum states. This hybridization leads to the broadening of molecular resonances, a measure of the electronic coupling to the surface. In this work, we present detailed ab initio calculations of the evolution of this electronic coupling for selected frontier orbitals with bias voltage in molecular junctions, nanoscale devices where metal–molecule interface effects are dominant. We focus on symmetric and asymmetric junctions based on an experimentally well-studied system, Au–bipyridine–Au, as examples of our method. The nature of the bias-dependent coupling that emerges from our ab initio calculations provides new physical insight into experimentally achievable systems and is a marked quantitative improvement over simple Lorentzian models often used in interpreting device measurements. Beyond molecular junctions, our approach can be straightforwardly generalized to other molecule–metal interfaces.

Liu, Zhen-Fei↗
DOE OSTI2018

Interplay between Ion Transport, Applied Bias, and Degradation under Illumination in Hybrid Perovskite p-i-n Devices

In this work, we studied ion transport in hybrid organic–inorganic perovskite p-i-n devices as a function of applied bias under device operating conditions. Using electrochemical impedance spectroscopy (EIS) and equivalent circuit modeling, we elucidated various resistive and capacitive elements in the device. We show that ion migration is predictably influenced by a low applied forward bias, characterized by an increased capacitance at the hole-transporting (HTM) and electron-transporting material (ETM) interfaces, as well as in bulk. However, unlike observations in n-i-p devices, we found that there is a capacitive discharge leading to ion redistribution in the bulk at high forward biases. Furthermore, we show that a chemical double-layer capacitance buildup as a result of ion accumulation impacts the electronic properties of the device, likely by inducing either charge pinning or charge screening, depending on the direction of the ion-induced field. Finally, we extrapolate ion diffusion coefficients (~10 –7 cm 2 s –1 ) and ionic conductivities (~10 –7 S cm –1 ) from the Warburg mass (ion) diffusion response and show that, as the device degrades, there is an overall depletion of capacitive effects coupled with increased ion mobility.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Conduction of Metal–Thin Organic Film–Metal Junctions at Low Bias

A model for the low bias electric conductance of junctions, consisting of a thin organic film (TOF) positioned between two metallic electrodes (M), has been created. In contrast with other theoretical studies, the proposed model relies on the energy band picture of M–TOF–M systems. Theoretical analysis of the band-like transport has shown that the electronic flow between metallic electrodes can exist in M–TOF–M junctions only if injected charge carriers are able to overcome the potential barrier with the thickness-dependent height. Such an obstacle to the motion of injected charges in the TOF conduction band arises due to the bending of this band caused by carriers localized in structural traps. Two regimes of the zero bias conductance of M–TOF–M junctions have been studied theoretically for situations, where charges overcome the thickness-dependent barrier undergoing either thermally activated or tunneling transitions. Analytical expressions derived for the zero bias conduction in these two regimes enable us to specify key physical parameters controlling charge transport across the film and provide results consistent with observations. On the basis of our findings, we infer that thermally activated and tunneling conductances can be distinguished by temperature and thickness dependencies. Theoretical results obtained for the electric conductance of M–TOF–M systems in the tunneling regime are compared with those obtained for assemblies in which TOF has been replaced by a single molecule. Furthermore, distinctions between transport properties of these two systems and their similarities resulting from the present model are reported on.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗