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At least 505 records · Page 28

Infrared spectra of group III A metal oxides

The measurement of infrared frequencies of metal-oxygen species which could be formed in the matrix and to investigate with an oxygen-18 enrichment study the controversy on the vibrational assignments for the suboxide. Several new molecules, Al3O2, Ga3O, In3O, In4O2, IntaO, IntaO2, and In2WO4, were found by mass spectrometric sampling to exist in extremely minor concentrations in the vapor phase. The latter three species were formed by reaction with the crucible materials and were unimportant for an infrared analysis. The infrared spectroscopic measurements were obtained by the matrix isolation technique of molecular beam sampling. The MO2 species were formed by direct reaction between metal and O2 in the matrix. A C2v structure and an O-M-O bond angle near 40 deg was favored for these molecules by analogy with a similar investigation of the alkali metals. The vibrational frequencies which were determined are given.

Lynch, D. A., Jr.↗

Electron Microprobe Analyses of Lithic Fragments and Their Minerals from Luna 20 Fines

The bulk analyses (determined with the broad beam electron microprobe technique) of lithic fragments are given in weight percentages and are arranged according to the rock classification. Within each rock group the analyses are arranged in order of increasing FeO content. Thin section and lithic fragment numbers are given at the top of each column of analysis and correspond to the numbers recorded on photo mosaics on file in the Institute of Meteoritics. CIPW molecular norms are given for each analysis. Electron microprobe mineral analyses (given in oxide weight percentages), structural formulae and molecular end member values are presented for plagioclase, olivine, pyroxene and K-feldspar. The minerals are selected mostly from lithic fragments that were also analyzed for bulk composition. Within each mineral group the analyses are presented according to the section number and lithic fragment number. Within each lithic fragment the mineral analyses are arranged as follows: Plagioclase in order of increasing CaO; olivine and pyroexene in order of increasing FeO; and K-feldspar in order of increasing K2O. The mineral grains are identified at the top of each column of analysis by grain number and lithic fragment number.

Conrad, G. H.↗

Sodium sulfate: Vaporization thermodynamics and role in corrosive flames

Gaseous species over liquid Na2SO4 were identified by the technique of molecular beam mass spectrometry. The heat and entropy of vaporization of the Na2SO4 molecule were measured directly. Comparisons of the experimental entropy with values calculated using various molecular parameters were used to estimate the molecular structure and vibrational frequencies. The thermodynamic properties of gaseous and condensed phase Na2SO4, along with additional pertinent species, were used in a computer program to calculate equilibrium flame compositions and temperatures for representative turbine engine and burner rig flames. Compositions were calculated at various fuel-to-oxidant ratios with additions of sulfur to the fuel and the components of sea salt to the intake air. Temperatures for condensation of Na2SO4 were obtained as a function of sulfur and sea salt concentrations.

Kohl, F. J.↗

Physical properties of thin-film field emission cathodes with molybdenum cones

Field emission cathodes fabricated using thin-film techniques and electron beam microlithography are described, together with effects obtained by varying the fabrication parameters. The emission originates from the tip of molybdenum cones that are about 1.5 micron tall with a tip radius around 500 A. Such cathodes have been produced in closely packed arrays containing 100 and 5000 cones as well as singly. Maximum currents in the range 50-150 microamp per cone can be drawn. Life tests with the 100-cone arrays drawing 2 mA total emission (or 3 A per sq cm) have proceeded in excess of 7000 hr with about a 10% drop in emission current. Studies are presented of the emission characteristics and current fluctuation phenomena. It is tentatively concluded that the emission arises from only one or a few atomic sites on the cone tips.

Spindt, C. A.↗

Secondary electron emission from a dielectric film subjected to an electric field

An electric field in the range of 0.3,3.3 kV/mm is created normal to a thin film FEP teflon sample which accumulates potential of up to 8.8, 13.7 or 18.3 kV when exposed to an electron beam having energy of 10.0, 15.0 or 20.0 kV, respectively. It is found that the secondary electron emission from the charged sample varies with field. The threshold voltage, at which the secondary electron emission coefficient sigma is unity, drops down from a low field value of 13.73 kV to a high field value of 13.11 kV for a 15.0 kV beam. A computational technique was developed that generates equipotential lines or contours and field vectors above a plane where potential is known. The utilization of conformal transformations allows the extension of the technique to configurations which map into a plane.

Quoc-Nguyen, N.↗

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.

Topich, J. A.↗

Optical measurement methods in thermogasdynamics

A review is presented of a number of optical methods of flow measurements. Consideration is given to such spectroscopic methods as emission and absorption techniques, electron beam-stimulated fluorescence, and light scattering - Rayleigh, Raman and Mie - methods. The following visualization methods are also discussed: shadow photography, schlieren photography, interferometry, holographic interferometry, laser anemometry, particle holography, and electron-excitation imaging. A large bibliography is presented and the work is copiously illustrated with figures and photographs.

Stursberg, K.↗

Fabrication of OSOS cells by neutral ion beam sputtering

Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

Burk, D. E.↗

Computational models for the nonlinear analysis of reinforced concrete plates

A finite element computational model for the nonlinear analysis of reinforced concrete solid, stiffened and cellular plates is briefly outlined. Typically, Mindlin elements are used to model the plates whereas eccentric Timoshenko elements are adopted to represent the beams. The layering technique, common in the analysis of reinforced concrete flexural systems, is incorporated in the model. The proposed model provides an inexpensive and reasonably accurate approach which can be extended for use with voided plates.

Hinton, E.↗

A structural analysis of small vapor-deposited 'multiply twinned' gold particles

High resolution selected zone dark field, Bragg reflection imaging and weak beam dark field techniques of transmission electron microscopy were used to determine the structure of small gold particles vapor deposited on NaCl substrates. Attention was focused on the analysis of those particles in the 50-150 A range that have pentagonal or hexagonal bright field profiles. These particles have been previously described as multiply twinned crystallites composed of face-centered cubic tetrahedra. The experimental evidence of the present studies can be interpreted on the assumption that the particle structure is a regular icosahedron or decahedron for the hexagonal or the pentagonal particles respectively. The icosahedron is a multiply twinned rhombohedral crystal and the decahedron is a multiply twinned body-centered orthorhombic crystal, each of which constitutes a slight distortion from the face-centered cubic structure.

Yang, C. Y.↗

Precise RF timing signal distribution to remote stations

A method and apparatus are disclosed for distributing a stable reference frequency from a hydrogen maser frequency standard, or similar RF source, to remote stations over great distances with very good phase stability, and with constant amplitude, at each distribution point using a light beam carrier. A technique for providing automatic gain control at an optical receiver with phase stability in the RF reference is provided.

Lutes, G. F.↗

High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy

The maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K-band GaAs power field-effect transistors (FETs) fabricated on the MBE wafers. An output power of 710 mW with 4.5-dB gain and 17.7 percent power-added efficiency was achieved at 21 GHz with a 1.26-mm gate width pi-gate device. A similar device with a 0.56-mm gate width produced an output power of 320 mW with 5.0-dB gain and 26.6 percent power-added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FETs operated in the K-band frequency range.

Saunier, P.↗

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

Vasquez, R. P.↗