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CuBiW 2 O 8 (CBTO), with a band gap of 1.9–2.0 eV, responds to a wide region of the electromagnetic spectrum has been demonstrated as a photocatalyst with high activity for Cr( vi ) reduction.
Phase-pure wurtzite structure is observed in ZnSe 1− x Te x thin films doped by flowing molecular nitrogen during growth. A combination of factors help stabilize this phase and the result opens the door to new polymorph engineering in II–VI materials.
Computational and experimental results detail the speciation and stability of Np( vii ) under varied pH conditions. Sequential protonation reactions and their thermodynamic feasibility for the Np( vii )O 4 (OH) 2 3+ to Np( vi )O 2 2+ transition are discussed.
Millions of tons of coal fly ashes (CFAs) are produced annually during coal combustion in the U.S., which are commonly beneficially used in the concrete industry or disposed of in ash ponds. CFAs contain trace amounts of a range of toxic heavy metals including selenium (Se). Because the toxicity of Se is dependent on its speciation, investigating Se speciation in CFAs as affected by coal source and combustion conditions can help understand the related environmental and human health impacts during disposal or beneficial reuse. In this study, a set of representative CFA samples were characterized for Se speciation using synchrotron X-ray absorption spectroscopy (XAS) and micro-X-ray fluorescence spectromicroscopy (μ-XRF/XAS). Se-containing particles were highly heterogeneous, and individual particles might contain multiple oxidation states including Se(0), Se(IV), and Se(VI). Principal component analysis was performed for sample characteristics including Al 2 O 3 , SiO 2 , CaO, FeO, loss on ignition, average particle size, Se concentration, and Se oxidation state. Selective catalytic reduction (SCR), which is used to limit nitrogen oxide (NO x ) emissions during coal combustion, was found to be associated with the presence of reduced Se oxidation states, with up to 90% Se(0) observed in samples with SCR. Alongside SCR, FeO content may also influence Se speciation.
Cobalt-mimochrome VI*a (CoMC6*a), a synthetic mini-enzyme with a cobalt porphyrin active site, is developed as a biomolecular catalyst for electrocatalytic CO 2 reduction in water. The catalytic turnover number reaches ∼14 000 for CO production with a selectivity of 86 : 5 over H 2 production under the same conditions. Varying the applied potential and the p K a of the proton donor was used to gain insight into the basis for selectivity. The protected active site of CoMC6*a is proposed to enhance selectivity for CO 2 reduction under conditions that typically favor H 2 production by related catalysts. CoMC6*a activity and selectivity change only marginally under air, indicating excellent oxygen tolerance.
Here, the utility of the sterically bulky terphenylthiolate ligand, (SAr iPr6 ) 1− in expanding uranium reductive chemistry has been explored. Reduction of U(SAr iPr6 ) 2 I forms the U(II) complex, U(SAr iPr6 ) 2 , in which the metal is protected by the flanking arene rings of the ligand, but they move out of the way to accommodate the four electron reduction of PhN=NPh to form the U(VI) bis(imido) product U(SAr iPr6 ) 2 (=NPh) 2 (THF) 2 . Here, the KC 8 reduction of U(SAr iPr6 ) 2 generates a more reduced complex, KU(μ-SAr iPr6 ) 2 , initially identified by a −2.55 V vs. Fc + /Fc electrochemical reduction event in THF.
Alkali-metal-based materials are promising building blocks for energy conversion and storage technologies. Here, we use a molecular reactivity-based solution-phase approach to selectively synthesize multiple phases and specific polymorphs of lithium- and sodium-containing triel chalcogenide nanocrystals, LiTrCh 2 , NaTrCh 2 , and NaTr 3 Ch 5 , where Tr = Ga and In and Ch = S, Se, and Te. Analogous to the case of binary II–VI and III–V tetrahedral semiconductors, where the two commonly isolated zinc blende and wurtzite polymorphs are separated by only 1–50 meV f.u. −1 , we find that LiTrCh 2 nanocrystals easily adopt tetragonal (chalcopyrite) and orthorhombic polymorphs separated by only 2.7–6.2 meV f.u. −1 Because of this small energy difference, soft colloidal synthesis succeeds in accessing either one of these polymorphs, depending on the specific dichalcogenide precursor used. Highly reactive diethyl diselenide favors the thermodynamically more stable tetragonal I$\bar{4}2$d phase, whereas mildly reactive diphenyl diselenide favors the kinetic, metastable orthorhombic Pna2 1 phase. Density functional theory calculations confirm the relative energies among multiple LiTrCh 2 polymorphs and also model the observed powder X-ray diffraction pattern of a new C2 NaIn 3 Te 5 phase. 7 Li, 69 Ga, and 77 Se solid-state NMR spectra are consistent with phase-pure ternary LiGaSe 2 nanocrystals. A majority of the nanocrystal compositions are visible-light emitters. This work opens the door to new Li/Na-based ternary triel chalcogenide nanostructures for energy storage and conversion applications.
Nitrogen-doped zinc selenide telluride (N:ZnSe x Te 1−x ) is of interest because it is one of the widest-gap II–VI semiconductors that can still be doped p-type with reasonably high hole concentrations. We sputter deposit N:ZnSe x Te 1−x films, varying Se/(Se + Te), or x, from 0 to 0.7, N 2 flow rate from 0.25 to 0.75 sccm, and substrate temperature from 250 to 370 °C. Increasing x from 0 to 0.39 at the optimal temperature of 370 °C and N 2 flow rate of 0.5 sccm leads to 1.3 atomic % nitrogen incorporation and wurtzite phase stabilization. Such doping and alloying increases hole concentration from 3 × 10 18 cm −3 to 3 × 10 19 cm −3 , although mobility drops from 0.4 to 0.02 cm 2 V −1 s −1 . Our sputtered N:ZnSe 0.38 Te 0.62 has an absorption onset 0.1 eV greater than the ZnTe value of 1.87 eV. Increasing x from 0 to 0.51 enhances transmittance by moving absorption onset from 1.87 to 2.11 eV with diminished band gap bowing likely due to disorder, and increases the work function from 5.12 to 5.42 eV. This combination of tunable properties makes sputtered N:ZnSe x Te 1−x desirable for transparent p-type contacts in polycrystalline Cd(Se,Te) optoelectronic devices.
Bottomonium states are key probes for experimental studies of the quark-gluon plasma (QGP) created in high-energy nuclear collisions. Theoretical models of bottomonium productions in high-energy nuclear collisions rely on the in-medium interactions between the bottom and antibottom quarks, which can be characterized by real (V R (T, r)) and imaginary (V I (T, r)) potentials, as functions of temperature and spatial separation. Recently, the masses and thermal widths of up to 3S and 2P bottomonium states in QGP were calculated using lattice quantum chromodynamics (LQCD). Starting from these LQCD results and through a novel application of deep neural network (DNN), here, we obtain model-independent results for V R (T, r) and V I (T, r). The temperature dependence of V R (T, r) was found to be very mild between T ≈ 0 - 330 MeV. Meanwhile, VI(T, r) shows rapid increase with T and r, which is much larger than the perturbation theory based expectations.
We report the observation of photo-induced plasmon–phonon coupled modes in the group IV–VI semiconductor PbTe using ultrafast x-ray diffuse scattering at the Linac Coherent Light Source. We measure the near-zone-center excited-state dispersion of the heavily screened longitudinal optical (LO) phonon branch as extracted from differential changes in x-ray diffuse scattering intensity following above bandgap photoexcitation. We suggest that upon photoexcitation, the LO phonon-plasmon coupled (LOPC) modes themselves become coupled to longitudinal acoustic modes that drive electron band shifts via acoustic deformation potentials and possibly to low-energy single-particle excitations within the plasma and that these couplings give rise to displacement-correlations that oscillate in time with a period given effectively by the heavily screened LOPC frequency.
Thin-film material libraries in the ternary and quaternary metal oxide systems Fe–V–O, Cu–V–O, and Cu–Fe–V–O were synthesized using combinatorial reactive co-sputtering with subsequent annealing in air. Their compositional, structural, and functional properties were assessed using high-throughput characterization methods. Prior to the investigation of the quaternary system Cu–Fe–V–O, the compositions (Fe 61 V 39 )O x and (Cu 52 V 48 )O x with promising photoactivity were identified from their ternary subsystems Fe–V–O and Cu–V–O, respectively. Two Cu–Fe–V–O material libraries with (Cu 29-72 Fe 4-27 V 22-57 )O x and (Cu 11-55 Fe 27-73 V 12-34 )O x composition spread were investigated. Seven mixed ternary and quaternary phase regions were identified: I (α-Cu 3 FeV 6 O 26 /FeVO 4 ), II (Cu 5 V 2 O 10 /FeVO 4 /α-Cu 3 Fe 4 V 6 O 26 ), III (Cu 5 V 2 O 10 ), IV (Cu 5 V 2 O 10 /FeVO 4 , V (FeVO 4 /γ-Cu 2 V 2 O 7 /α-Cu 3 Fe 4 V 6 O 26 ), VI (β-Cu 2 V 2 O 7 /α-Cu 3 Fe 4 V 6 O 26 /FeVO 4 ), and VII (β-Cu 3 Fe 4 V 6 O 26 /FeVO 4 ). Furthermore, in the investigated composition range, two photoactive regions, (Cu 53 Fe 7 V 40 )O x and (Cu 45 Fe 21 V 34 )O x , were identified, exhibiting 103 μ A/cm 2 and 108 μ A/cm 2 photocurrent density for the oxygen evolution reaction at 1.63 V vs reversible hydrogen electrode, respectively. The highest photoactive region (Cu 45 Fe 21 V 34 )O x comprises the dominant α-Cu 3 Fe 4 V 6 O 24 phase and minor FeVO 4 phase. This photoactive region corresponds to having an indirect bandgap of 1.87 eV and a direct bandgap of 2.58 eV with an incident photon-to-current efficiency of 30% at a wavelength of 310 nm.
All semiconductors, whether by design or by accident, contain defects. The fundamental properties of defects, such as impurities, native defects, and extended defects, affect a broad range of applications. These technologically important defects may be introduced during growth and processing. Electrical, optical, and magnetic phenomena related to defects have been observed experimentally and studied theoretically in a variety of materials. In addition to traditional semiconductors (elemental, III–V, and II–VI), emerging materials include organic semiconductors, nitrides, oxides, and topological insulators, in bulk crystal and thin-film forms as well as low-dimensional and nanoscale structures.
Experiments have demonstrated that a Z-pinch can persist for thousands of times longer than the growth time of global magnetohydrodynamic (MHD) instabilities such as the m=0 sausage and m=1 kink modes. These modes have growth times on the order of ta=a/vi, where vi is the ion thermal speed and a is the pinch radius. Axial flows with duz/dr ≲ vi/a have been measured during the stable period, and the commonly accepted theory is that this amount of shear is sufficient to stabilize these modes as predicted by numerical studies using the ideal MHD equations. However, these studies only consider specific equilibrium profiles that typically have a modest magnitude for the logarithmic pressure gradient, qP≡d ln P/d ln r, and may not represent experimental conditions. Linear stability of the sheared-flow Z-pinch is studied here via a direct eigen-decomposition of the matrix operator obtained from the linear ideal MHD equations. Several equilibrium profiles with a large variation of qP are examined. Considering a practical range of k, 1/3 ≲ ka ≲ 10, it is shown that the shear required to stabilize m=0 modes can be expressed as duz/dr≥Cγ0/(ka)α. Here, γ0=γ0(ka) is the profile-specific growth rate in the absence of shear, which scales approximately with |qP|. Both C and α are profile-specific constants, but C is order unity and α≈1. It is further demonstrated that even a large value of shear, duz/dr=3vi/a, is not sufficient to provide linear stabilization of the m=1 kink mode for all profiles considered. This result is in contrast to the currently accepted theory predicting stabilization at much lower shear, duz/dr=0.1vi/a, and suggests that the experimentally observed stability cannot be explained within the linear ideal-MHD model.
II–VI semiconductors are used in numerous electro-optical applications. For example, CdTe-based solar technology is cost competitive with other electricity generation sources, yet there is still significant room to improve. Carrier lifetime has historically been well below the radiative recombination limit. Lifetimes reaching beyond 100 ns can significantly enhance performance and enable novel device structures. Here, double heterostructures (DHs) with passivated interfaces demonstrate lifetimes exceeding 1 µs, yet this appears only for CdSeTe and not for CdTe DHs. We compare the passivation mechanisms in CdTe and CdSeTe DHs. CdSeTe lifetimes on the order of 1 µs correspond to a combination of superior intragrain lifetime, extremely low grain boundary recombination and greater Te4+ interfacial presence compared to CdTe.
The 57Fe isomer shift (IS) of pure iron has been measured up to 100 GPa using synchrotron Mössbauer spectroscopy in the time domain. Apart from the expected discontinuity due to the α→ε structural and spin transitions, the IS decreases monotonically with increasing pressure. The absolute shifts were reproduced without semi-empirical calibrations by periodic density functional calculations employing extensive localized basis sets with several common density functionals. However, the best numerical agreement is obtained with the B1WC hybrid functional. Extension of the calculations to 350 GPa, a pressure corresponding to the Earth’s inner core, predicted the IS range of 0.00 to -0.85 mm/s, covering the span from Fe(0) to Fe(VI) compounds measured at ambient pressure. The calculations also reproduced the pressure trend from polymorphs of prototypical iron oxide minerals, FeO and Fe2O3. Analysis of the electronic structure shows a strong donation of electrons from oxygen to iron at high pressure. The assignment of formal oxidation to the Fe atom becomes ambiguous under this condition.
The description of carrier dynamics in spatially confined semiconductor nanocrystals (NCs), which have enhanced electron–hole and exciton–phonon interactions, is a great challenge for modern computational science. These NCs typically contain thousands of atoms and tens of thousands of valence electrons with discrete spectra at low excitation energies, similar to atoms and molecules, that converge to the continuum bulk limit at higher energies. Computational methods developed for molecules are limited to very small nanoclusters, and methods for bulk systems with periodic boundary conditions are not suitable due to the lack of translational symmetry in NCs. This perspective focuses on our recent efforts in developing a unified atomistic model based on the semiempirical pseudopotential approach, which is parameterized by first-principle calculations and validated against experimental measurements, to describe two of the main nonradiative relaxation processes of quantum confined excitons: exciton cooling and Auger recombination. Here, we focus on the description of both electron–hole and exciton–phonon interactions in our approach and discuss the role of size, shape, and interfacing on the electronic properties and dynamics for II–VI and III–V semiconductor NCs.
The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.
The possible existence of a liquid–liquid critical point in deeply supercooled water has been a subject of debate due to the challenges associated with providing definitive experimental evidence. The pioneering work by Mishima and Stanley [Nature 392, 164–168 (1998)] sought to shed light on this problem by studying the melting curves of different ice polymorphs and their metastable continuation in the vicinity of the expected liquid–liquid transition and its associated critical point. Based on the continuous or discontinuous changes in the slope of the melting curves, Mishima [Phys. Rev. Lett. 85, 334 (2000)] suggested that the liquid–liquid critical point lies between the melting curves of ice III and ice V. Herein we explore this conjecture using molecular dynamics simulations with a machine learning model based on ab initio quantum-mechanical calculations. We study the melting curves of ices III, IV, V, VI, and XIII and find that all of them are supercritical and do not intersect the liquid–liquid transition locus. We also find a pronounced, yet continuous, change in the slope of the melting lines upon crossing of the liquid locus of maximum compressibility. Finally, we analyze the literature in light of our findings and conclude that the scenario in which the melting curves are supercritical is favored by the most recent computational and experimental evidence. Although the preponderance of evidence is consistent with the existence of a second critical point in water, the behavior of ice polymorph melting lines does not provide strong evidence in support of this viewpoint, according to our calculations.